Infineon-Technologies-IRF7451TRPBF
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PD- 95725
IRF7451PbF
SMPS MOSFET
HEXFET
®
Power MOSFET
Applications
l
High frequency DC-DC converters
l
Lead-Free
V
DSS
150V
R
DS(on)
max
I
D
3.6A
0.09
W
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
A
A
D
1
2
3
4
8
S
S
S
G
7
6
5
D
D
D
l
Fully Characterized Avalanche Voltage
and Current
SO-8
Top View
Absolute Maximum Ratings
Parameter
Max.
3.6
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
2.9
A
29
P
D
@T
A
= 25°C
Power Dissipation
Linear Derating Factor
2.5
W
W/°C
V
0.02
± 30
7.9
V
GS
dv/dt
T
J
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
V/ns
-55 to
+ 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
θ
JL
R
θ
JA
Junction-to-Drain Lead
Junction-to-Ambient
–––
–––
20
50
°C/W
Notes
through
are on page 8
1
8/10/04
IRF7451PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
150 –––
–––
––– 0.19
––– V/°C
Reference to 25°C, I
D
= 1mA
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
V
GS
= 0V, I
D
= 250µA
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– –––
0.09
3.0 –––
5.5
Ω
V
V
GS
= 10V, I
D
= 2.2A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 150V, V
GS
= 0V
V
DS
= 120V, V
GS
= 0V, T
J
= 150°C
V
GS
= 30V
––– ––– 25
––– –––
250
––– –––
100
––– –––
-100
I
DSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
I
GSS
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
g
fs
3.5
–––
–––
–––
–––
–––
–––
–––
––– –––
S
V
DS
= 25V, I
D
= 2.2A
I
D
= 2.2A
Q
g
28
6.8
13
41
10
20
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
nC V
DS
= 120V
V
GS
= 10V
V
DD
= 75V
10 –––
4.2 –––
17 –––
15 –––
I
D
= 2.2A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 6.5
Ω
V
GS
= 10V
V
GS
= 0V
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
––– 990
–––
––– 220
–––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
V
DS
= 25V
–––
42 –––
pF
ƒ = 1.0MHz
––– 1260
–––
––– 100
–––
––– 180
–––
V
GS
= 0V,
V
DS
= 1.0V,
ƒ = 1.0MHz
V
GS
= 0V,
V
DS
= 120V,
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 120V
ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
210
Units
mJ
E
AS
I
AR
3.6
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
I
S
Continuous Source Current
(Body Diode)
MOSFET symbol
2.3
––– –––
showing the
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– –––
29
S
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.3
––– 76 110
––– 270 400
V
T
J
= 25°C, I
S
= 2.2A, V
GS
= 0V
ns
T
J
= 25°C, I
F
= 2.2A
Q
rr
nC di/dt
= 100A/µs
2
IRF7451PbF
100
10
1
100
10
VGS
VGS
15.0V
12.0V
10.0V
8.0V
7.0V
6.0V
5.5V
TOP
15.0V
12.0V
10.0V
8.0V
7.0V
6.0V
TOP
5.5V
BOTTOM 5.0V
BOTTOM 5.0V
1
0.1
5.0V
5.0V
0.01
0.001
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
2.5
100
3.6A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T =
150 C
10
1
J
°
T =
25 C
J
0.1
V
= 25V
20µs PULSE WIDTH
DS
V
=
1
0V
GS
0.01
-60 -40 -20
0
20 40 60 80
100 120 140 160
°
4.0
5.0
6.0
7.0 8.0
T ,
Junction Temperature (
C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRF7451PbF
16
12
8
100000
I =
D
2.2A
V
C
= 0V,
f = 1 MHZ
GS
V
V
V
= 120V
= 75V
= 30V
DS
DS
DS
= C
+ C
, C
SHORTED
iss
gs gd
ds
C
C
= C
gd
rss
oss
10000
1000
100
= C
+ C
ds
gd
Ciss
Coss
Crss
4
10
1
10
100
1000
0
0
10
20
30
40
Q ,
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
10
°
T =
150 C
J
°
T =
25 C
J
1
10ms
°
T =
25 C
C
°
T =
150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
0.2
1
10
100
1000
0.4
0.6
0.8
1.0
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
4
IRF7451PbF
4.0
3.0
2.0
1.0
0.0
R
D
V
DS
V
GS
10V
D.U.T.
R
G
+
V
DD
–
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
T
A
, Ambient Temperature (°C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b.
Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
/ t
1
2. Peak T
=
P
J
x Z
+ T
thJC C
DM
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t ,
Rectangular Pulse Duration (sec)
1
Fig 10.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRF7451PbF
0.085
0.083
0.120
0.105
0.090
0.075
0.060
VGS = 10V
0.080
0.078
0.075
0.073
0.070
I
= 2.2A
D
6.0 7.0 8.0 9.0
10.0 11.0 12.0 13.0 14.0 15.0
0
2
4
6
8
10 12 14 16
V
Gate -to -Source Voltage
(V)
I
, Drain Current ( A )
GS,
D
Fig 12.
On-Resistance Vs. Drain Current
Fig 13.
On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.
T
.
Q
G
50K
Ω
.3
µ
F
V
GS
.2
µ
F
12V
Q
Q
GD
GS
+
500
V
DS
D.U.
T
.
–
V
I
G
D
V
GS
TOP
1.6A
3mA
Charge
2.9A
BOTTOM 3.6A
400
300
200
100
0
I
I
D
G
Current Sampling Resistors
Fig 13a&b.
Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
25
50
75
100
125
150
20V
Ω
0.01
t
°
p
Starting T
, Junction Temperature (
C)
I
J
AS
Fig 14c.
Maximum Avalanche Energy
Fig 14a&b.
Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
IRF7451PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
IN
C
H
ES
MILLIMETERS
DIM
A
D
B
MIN
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
.0532
5
A
E
A1
.
0040
b
c
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
0.25 [.010]
A
.1497
4
.050 B
A
S
I
C
1.27 B
A
S
I
C
e 1
.025 B
A
S
I
C
0.635 B
A
S
I
C
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT P
R
INT
8X 0.72
[.028]
NOT ES :
1. DIMEN
S
I
O
N
I
N
G
&
T
O
L
ERANCING
P
ER
A
S
M
E Y
1
4.5
M
–
1994.
2. CONT
ROLLING DIMENS
ION: MILLIMET
ER
3. DIMENS
IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT
L
I
N
E CONF OR MS
T O JE DE C
OU T L
I
N
E
M
S
–
012
A
A.
5
6
7
DIMENS I
O
N
DOES NOT
I
NCLUDE MOLD PROT
RUSIONS .
M
O
L
D
P
RO
T
RU
S
I
O
NS NOT
T
O
E
X
C
EED 0.15 [.006].
6.46 [.255]
DIMENS I
O
N
DOES NOT
I
NCLUDE MOLD PROT
RUSIONS .
M
O
L
D
P
RO
T
RU
S
I
O
NS NOT
T
O
E
X
C
EED 0.25 [.010].
DIMEN
S
I
O
N
I
S THE LENGTH OF LEAD FOR SOLDERING TO
AS
U
BSTR
A
TE.
3X 1.27
[.050]
8X 1.78
[.070]
SO-8 Part Marking
E
X
AM
P
L
E: THIS IS AN IRF
7
101 (MOSFET)
D
A
TE
C
ODE (
Y
W
W)
P =
DE S I GN
A
T E S L E A
D
-F R E E
PRODUCT (OP
T
I
O
N
A
L)
Y=
L
A
S
T
D
I
G
I
T
O
F
T
HE
Y
E
AR
XXXX
F7101
WW =
WEEK
INTERNATI
O
N
A
L
RECTIFIER
L
O
GO
A =
A
S
SE
M
BL
Y
S
I
TE
C
ODE
L
O
T CODE
P
A
RT NUMBER
7
IRF7451PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating;
pulse width limited by
Pulse width
≤
400µs; duty cycle
≤
2%.
max. junction temperature.
ꢀ
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
When mounted on 1 inch square copper board.
Starting T
J
= 25°C, L = 33mH,
R
G
= 25
Ω
, I
AS
= 3.6A.
.
I
SD
≤
2.2A, di/dt
≤
180A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
150°C
,
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
8
