Infineon-Technologies-IRF7480MTRPBF
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Strong
IR
FET™
IRF7480MTRPbF
DirectFET
®
N-Channel Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
V
DSS
R
DS(on)
typ.
max
40V
0.95m
1.20m
217A
I
D (Silicon Limited)
I
D (double-sided cooling)
330A
S
S
S
S
S
Benefits
D
D
Improved Gate,
Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Lead-Free, RoHS Compliant
G
ME
Standard Pack
Form
Base part number
Package Type
Orderable Part Number
Quantity
IRF7480MPbF
DirectFET
®
ME
Tape and Reel
4800
IRF7480MTRPbF
3.0
2.5
2.0
1.5
1.0
0.5
225
200
175
150
125
100
75
I
= 132A
D
T
= 125°C
J
50
25
T
= 25°C
J
0
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
T
, Case Temperature (°C)
C
V
Gate -to -Source Voltage
(V)
GS,
Fig 2.
Maximum Drain Current vs. Case Temperature
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
2016-5-4
IRF7480MTRPbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
I
D
@ T
C
(top)= 25°C
Continuous Drain Current, V
GS
@ 10V (double-sided cooling)
330
T
C
(bottom)= 25°C
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Pulsed Drain Current
217
137
868
A
P
D
@T
C
= 25°C
Maximum Power Dissipation
96
W
W/°C
V
Linear Derating Factor
0.77
V
GS
T
J
T
STG
Gate-to-Source Voltage
± 20
Operating Junction and
Storage Temperature Range
-55 to
+ 150
°C
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
81
mJ
E
AS (Thermally limited)
206
I
AR
A
See Fig.15,16, 23a, 23b
E
AR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol
R
JA
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Typ.
–––
12.5
20
Max.
45
Units
–––
–––
1.3
R
JA
°C/W
R
JA
R
JC
–––
0.75
Junction-to-PCB Mounted
–––
R
J-PCB
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Parameter
Min. Typ. Max. Units
Conditions
V
GS
= 0V, I
D
= 250µA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40
––– –––
V
–––
30 –––
mV/°C Reference to 25°C, I
D
= 1.0mA
V
(BR)DSS
/
T
J
R
DS(on)
––– 0.95 1.20
––– 1.60 –––
V
GS
= 10V, I
D
= 132A
m
V
GS
= 6.0V, I
D
= 66A
V
DS
= V
GS
, I
D
= 150µA
V
GS(th)
I
DSS
Gate Threshold Voltage
2.1
3.0
3.9
V
––– ––– 1.0
––– ––– 150
––– ––– 100
––– –––
-100
––– 0.81 –––
V
DS
= 40V, V
GS
= 0V
Drain-to-Source Leakage Current
µA
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
V
GS
= 20V
GS
= -20V
nA
V
R
G
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
TC measured with thermocouple mounted to top (Drain) of part.
Used double sided cooling , mounting pad with large heatsink.
Mounted to a PCB with small clip
heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu
board (still
air).
2
2016-5-4
IRF7480MTRPbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max.
Units
Conditions
DS
= 10V, I
D
= 132A
gfs
Q
g
370 ––– –––
––– 123 185
S
V
I
D
= 132A
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Total Gate Charge Sync. (Q
g
– Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
–––
–––
–––
–––
–––
–––
–––
31
44
79
21
70
68
58
–––
–––
–––
–––
–––
–––
–––
V
DS
=20V
nC
V
GS
= 10V
I
D
= 132A, V
DS
=0V, V
GS
= 10V
V
DD
= 20V
I
D
= 30A
R
G
= 2.7
ns
t
d(off)
t
f
Fall Time
V
GS
= 10V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 6680 –––
––– 1035 –––
––– 700 –––
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
pF
C
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
––– 1240 –––
oss
eff. (TR)
Effective Output Capacitance (Time Related)
––– 1515 –––
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
Diode Characteristics
Symbol Parameter
Min. Typ. Max.
Units
Conditions
D
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
––– –––
––– –––
87
A
V
G
I
SM
868
S
V
SD
Diode Forward Voltage
––– ––– 1.2
T
J
= 25°C,I
S
=132A, V
GS
= 0V
dv/dt
Peak Diode Recovery
T
J
=150°C,I
S
=132A,
V
DS
= 40V
––– 2.4 –––
V/ns
t
rr
Reverse Recovery Time
–––
–––
–––
–––
44
46
56
63
–––
–––
–––
–––
T
J
= 25° C
V
R
= 34V,
ns
I
F
= 132A
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
di/dt = 100A/µs
Q
rr
I
RRM
Reverse Recovery Charge
Reverse Recovery Current
nC
A
––– 2.1 –––
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Limited by T
J
max, starting T
J
= 25°C, L = 0.009mH, R
G
= 50
, I
AS
= 132A, V
GS
=10V.
I
SD
≤
132A, di/dt
≤
920A/µs, V
DD
≤
V(
BR)DSS
, T
J
≤
150°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1″ square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50
, I
AS
= 20A, V
GS
=10V.
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2016-5-4
IRF7480MTRPbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 3.
Typical Output Characteristics
Fig 4.
Typical Output Characteristics
1000
100
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 132A
= 10V
D
V
GS
T
= 150°C
J
T
= 25°C
J
V
= 10V
DS
60µs PULSE WIDTH
1.0
2
3
4
5
6
7
8
-60 -40 -20
T
0
20 40 60 80
100 120 140 160
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6.
Normalized On-Resistance vs. Temperature
Fig 5.
Typical Transfer Characteristics
14.0
100000
10000
1000
V
C
= 0V,
f = 1 MHZ
GS
I
= 132A
= C
+ C
, C
SHORTED
D
iss
gs
gd ds
12.0
10.0
8.0
C
= C
V
V
= 32V
= 20V
rss
gd
DS
DS
C
= C
+ C
oss
ds
gd
C
iss
C
oss
C
rss
6.0
4.0
2.0
0.0
100
0
20 40 60 80
100 120 140 160
, Total
Gate Charge (nC)
1
10
100
Q
V
, Drain-to-Source Voltage (V)
G
DS
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
4
2016-5-4
IRF7480MTRPbF
1000
100
10
1000
100
10
100µsec
T
= 150°C
J
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1msec
1
T
= 25°C
= 0V
J
10msec
1
Tc = 25°C
0.1
0.01
DC
Tj = 150°C
Single Pulse
V
GS
0.1
0.1
1
10
0.2
0.4
0.6
0.8
1.0
V
, Drain-to-Source Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 10.
Maximum Safe Operating Area
Fig 9.
Typical Source-Drain Diode Forward Voltage
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
48
Id = 1.0mA
47
46
45
44
43
42
41
40
-5
0
5
10 15 20 25 30 35 40
-60 -40 -20
0
20 40 60 80
100 120 140 160
, Temperature ( °C )
T
V
Drain-to-Source Voltage (V)
J
DS,
Fig 12.
Typical C
oss
Stored Energy
Fig 11.
Drain-to-Source Breakdown Voltage
4.5
Vgs = 5.5V
Vgs = 6.0V
4.0
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
20 40 60 80
100 120 140 160 180 200
, Drain Current (A)
I
D
Fig 13.
Typical On-Resistance vs. Drain Current
5
2016-5-4
IRF7480MTRPbF
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 125°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15.
Avalanche Current vs. Pulse Width
100
80
60
40
20
0
TOP
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
BOTTOM 1.0%
Duty Cycle
I
= 132A
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T = Allowable rise in junction temperature, not to exceed T
jmax
(assumed as 25°C in Figure 14, 15).
t
av
= Average time in avalanche.
D = Duty cycle in avalanche =
tav ·f
25
50
75
100
125
150
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
Starting T
, Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·I
av
) =
T/ Z
thJC
I
av
= 2
T/ [1.3·BV·Z
th
]
Fig 16.
Maximum Avalanche Energy vs. Temperature
E
AS (AR)
= P
D (ave)· av
t
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2016-5-4
IRF7480MTRPbF
4.0
3.5
3.0
2.5
2.0
1.5
9
8
7
6
5
4
3
2
I
= 88A
= 34V
F
V
R
T =
25°C
J
T =
125°C
J
I
I
I
I
= 150µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
-75 -50 -25
0
25 50 75
100 125 150
100
200
300
400
500
600
700
T
, Temperature ( °C )
di /dt
(A/µs)
J
F
Fig 17.
Threshold Voltage vs. Temperature
Fig 18.
Typical Recovery Current vs. dif/dt
200
9
8
7
6
5
4
3
2
I
= 88A
= 34V
I
= 132A
= 34V
F
F
V
V
180
160
140
120
100
80
R
R
T =
25°C
T =
25°C
J
J
T =
125°C
J
T =
125°C
J
100
200
300
400
500
600
700
100
200
300
400
500
600
700
di /dt
(A/µs)
di /dt
(A/µs)
F
F
Fig 20.
Typical Stored Charge vs. dif/dt
Fig 19.
Typical Recovery Current vs. dif/dt
200
I
= 132A
= 34V
F
V
R
T =
25°C
J
160
120
80
T =
125°C
J
40
100
200
300
400
500
600
700
di /dt
(A/µs)
F
Fig 21.
Typical Stored Charge vs. dif/dt
7
2016-5-4
IRF7480MTRPbF
Fig 22.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
20V
I
0.01
t
AS
p
Fig 23a.
Unclamped Inductive Test Circuit
Fig 23b.
Unclamped Inductive Waveforms
Fig 24a.
Switching Time Test Circuit
Fig 24b.
Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b.
Gate Charge Waveform
Fig 25a.
Gate Charge Test Circuit
8
2016-5-4
IRF7480MTRPbF
DirectFET
®
Board Footprint, ME Outline
(Medium Size Can, E-Designation)
Please see DirectFET
®
application note AN-1035 for all details regarding the assembly of DirectFET
®
.
This includes all recommendations for stencil and
substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
G
S
S
S
S
S
9
2016-5-4
IRF7480MTRPbF
DirectFET
®
Outline Dimension, ME Outline
(Medium Size Can, E-Designation)
Please see DirectFET
®
application note AN-1035 for all details regarding the assembly of DirectFET
®
. This includes
all recommendations for stencil and
substrate designs.
DIMENSIONS
METRIC
IMPERIAL
CODE MIN
MAX
MIN
MAX
0.250
0.199
0.156
0.018
0.024
0.044
0.038
0.052
0.017
0.024
0.036
0.083
0.144
0.028
A
B
6.25
4.80
3.85
0.35
0.58
1.08
0.93
1.28
0.38
0.58
0.88
2.08
3.63
0.59
0.02
0.08
6.35
5.05
3.95
0.45
0.62
1.12
0.97
1.32
0.42
0.62
0.92
2.12
3.67
0.70
0.246
0.189
0.152
0.014
0.023
0.043
0.037
0.050
0.015
0.023
0.035
0.082
0.143
0.023
C
D
E
F
G
H
J
J1
K
L
L1
M
N
P
0.08 0.0008 0.003
0.17 0.003 0.007
Dimensions are shown in
millimeters (inches)
DirectFET
®
Part Marking
LOGO
GATE MARKING
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates “Lead-Free”
10
2016-5-4
IRF7480MTRPbF
DirectFET
®
Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF7480MTRPBF). For 1000 parts on 7″
reel, order
IRF7480MTR1PBF
REEL DIMENSIONS
STANDARD OPTION
(QTY 4800)
METRIC
IMPERIAL
MIN
MAX
TR1 OPTION
(QTY 1000)
METRIC
IMPERIAL
CODE
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MAX
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
MAX
N.C
A
B
C
D
E
F
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
177.77
19.06
13.5
1.5
0.75
0.53
0.059
2.31
N.C
N.C
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
LOADED TAPE FEED DIRECTION
DIMENSIONS
METRIC
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MAX
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
0.319
0.161
0.484
0.219
0.209
0.264
N.C
G
H
0.063
1.60
11
2016-5-4
IRF7480MTRPbF
Qualification Information
†
Qualification Level
Industrial *
(per JEDEC JESD47F
††
guidelines)
MSL1
DFET 1.5
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D
††)
Yes
†
Qualification standards can be found at International Rectifier’s web site
††
Applicable version of JEDEC standard at the time of product release.
* Industrial qualification standards except autoclave test conditions.
Revision History
Date
Comments
Updated E
AS (L =1mH)
= 206mJ
on page 2
Updated note 9
“Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50
, I
AS
= 20A, V
GS
=10V” on page 3
Updated R
JA from
“60°C/W” to “45°C/W”
on page 2.
11/07/2014
Updated registered trademark from
DirectFET
TM
to DirectFET
®
on page 1,9 and 10.
05/14/2015
05/04/2016
Updated datasheet with corporate template.
Added ID (double- sided
cooling) = 300A on pages1 and 2.
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
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