Infineon-Technologies-IRF7501TRPBF
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PD – 95345A
IRF7501PbF
HEXFET
®
Power MOSFET
l
Generation V Technology
l
Ulrtra Low On-Resistance
l
Dual N-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (<1.1mm)
l
Available in Tape & Reel
l
Fast Switching
1
2
3
4
8
S1
G1
D1
V
DSS
=20V
7
D1
6
S2
G2
D2
5
D2
R
DS(on)
= 0.135
Ω
Top View
l
Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low
on-resistance per silicon
area. This
benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline.
This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
Max.
Units
V
DS
Drain-Source Voltage
20
V
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
2.4
1.9
A
19
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
1.25
0.8
W
W
0.01
16
W/°C
V
V
GSM
Gate-to-Source Voltage Single Pulse tp<10
μ
s
Gate-to-Source Voltage
V
GS
± 12
5.0
V
dv/dt
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
V/ns
°C
TJ , TSTG
-55 to
+ 150
240 (1.6mm from case)
Thermal Resistance
Parameter
Max.
Units
R
θ
JA
Maximum Junction-to-Ambient
100
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
1
02/13/12
IRF7501PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
20 –––
–––
V
V
GS
= 0V, I
D
= 250
μ
A
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient
––– 0.041 –––
V/°C Reference
to 25°C, I
D
= 1mA
––– 0.085
0.135
––– 0.120 0.20
0.70 ––– –––
2.6 ––– –––
––– ––– 1.0
––– –––
25
––– ––– 100
––– –––
-100
––– 5.3 8.0
––– 0.84 1.3
––– 2.2 3.3
––– 5.7 –––
––– 24 –––
––– 15 –––
––– 16 –––
––– 260 –––
––– 130 –––
––– 61 –––
V
GS
= 4.5V, I
D
= 1.7A
GS
= 2.7V, I
D
= 0.85A
R
DS(on)
Static Drain-to-Source On-Resistance
Ω
V
V
GS(th)
g
fs
Gate Threshold Voltage
V
S
V
DS
= V
GS
, I
D
= 250
μ
A
Forward Transconductance
V
DS
= 10V, I
D
= 0.85A
V
DS
= 16V, V
GS
= 0V
I
DSS
I
GSS
Drain-to-Source Leakage Current
μ
A
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
V
GS
= -12V
Q
g
I
D
= 1.7A
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
nC V
DS
= 16V
V
GS
= 4.5V, See Fig. 9
V
DD
= 10V
I
D
= 1.7A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 6.0
Ω
R
D
= 5.7
Ω
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
pF V
DS
= 15V
ƒ = 1.0MHz, See Fig. 8
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
I
S
––– ––– 1.25
showing the
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– –––
19
––– ––– 1.2
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
––– 39
––– 37
59
56
ns
T
J
= 25°C, I
F
= 1.7A
Q
r
r
nC di/dt
= 100A/
μ
s
Notes:
Repetitive rating;
pulse width limited by
Pulse width
≤
300
μ
s; duty cycle
≤
2%
max. junction temperature. ( See fig. 10 )
Surface mounted on FR-4 board, t
≤
10sec
I
SD
≤
1.7A, di/dt
≤
66A/
μ
s, V
DD
≤
V
(BR)DSS
T
J
≤
150°C
,
2
IRF7501PbF
100
10
100
10
VGS
7
.
5
V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
TOP
TOP
BOTTOM 1.5V
BO
T
TOM 1.5V
1
1
1.5V
0.1
0.1
1.5V
20
μ
s PULSE WIDTH
20
μ
s PULSE WIDTH
T
J
= 25°C
T =
150°C
J
A
A
0.01
0.01
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
100
10
1
100
10
1
T
J
= 150°C
T
J
= 25°C
T =
150°C
J
T =
25°C
J
V
DS
= 10V
20
μ
s PULSE WIDTH
V
= 0V
GS
A
0.1
0.1
0.4
4.0
A
1.5
2.0
2.5
3.0
3.5
0.6
V
0.8
1.0
1.2
1.4
1.6
1.8
, Source-to-Drain Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
SD
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forwar
d
V
oltage
3
IRF7501PbF
2.0
0.8
0.6
0.4
0.2
0.0
I
= 1.7A
D
1.5
1.0
0.5
0.0
V
= 2.5V
GS
V
= 5.0V
GS
V
= 4.5V
GS
A
A
0
2
4
6
-60 -40 -20
0
20 40 60 80
100 120 140 160
I
, Drain Current (A)
T ,
Junction Temperature (°C)
D
J
Fig 6.
Typical On-Resistance Vs. Drain
Fig 5.
Normalized On-Resistance
Current
Vs
.
T
emperature
0.13
0.11
0.09
0.07
0.05
I
= 2.4A
D
A
2
3
4
5
6
7
8
V
, Gate-to-Source Voltage (V)
GS
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
4
IRF7501PbF
10
8
500
400
300
200
100
0
I
V
= 1.7A
= 16V
V
C
C
C
= 0V,
f = 1MHz
D
DS
GS
iss
rss
oss
= C
+ C
,
C
SHORTED
gs
gd
gd
ds
= C
= C
+ C
ds
gd
C
C
iss
6
oss
4
C
rss
2
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
A
0
2
4
6
8
10
1
10
100
V
, Drain-to-Source Voltage (V)
Q ,
Total Gate Charge (nC)
DS
G
Fig 9.
Typical Gate Charge Vs.
Fig 8.
Typical Capacitance Vs.
Gate-to-Sourc
e
V
oltage
Drain-to-Sourc
e
V
oltage
1000
100
10
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t /
t
1
2. Peak T
=
P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fig 10.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRF7501PbF
Current Regulator
Same Type as D.U.
T
.
50K
Ω
.2
μ
F
.3
μ
F
Q
G
12V
+
V
DS
Q
Q
GD
GS
D.U.
T
.
–
V
GS
V
G
3mA
I
I
Charge
G
D
Current Sampling Resistors
Fig 11a.
Basic Gate Charge Waveform
Fig 11b.
Gate Charge Test Circuit
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
10V
Puls
e
W
idth
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 12a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 12b.
Switching Time Waveforms
6
IRF7501PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
–
+
–
–
+
•
dv/dt controlled by R
G
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
+
–
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P
.
W.
Period
Period
D =
P.W.
V
=10V
GS
D.U.
T
. I
W
aveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple
≤
5%
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
Fig 13
For N
Channel HEXFETS
7
IRF7501PbF
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
INCHES
MILLIMETERS
DIM
A
D
MIN
.036
MAX
MIN
MAX
3
– B –
D
D
7
D
6
D
5
D1 D1 D2 D2
.044
.008
.014
.007
.120
0.91
0.10
0.25
0.13
2.95
1.11
0.20
0.36
0.18
3.05
A1 .004
8
1
8
1
7
6
5
4
B
C
D
e
.010
.005
.116
8
1
7
2
6
3
5
4
3
SINGLE
DUAL
H
E
0.25 (.010)
M
A
M
– A –
2
3
2
3
4
.0256 BASIC
.0128 BASIC
0.65 BASIC
0.33 BASIC
e1
E
H
L
S1 G1 S2 G2
S
S
S
G
.116
.188
.016
0°
.120
.198
.026
6°
2.95
4.78
0.41
0°
3.05
5.03
0.66
6°
e
θ
6X
e 1
RECOMMENDED FOOTPRINT
θ
1.04
( .041 )
8X
0.38
8X
A
( .015 )
– C –
B
0.10 (.004)
A 1
C
L
8X
0.08 (.003)
8X
8X
M
C
A
S
B S
4.24
( .167 )
3.20
( .126 )
5.28
( .208 )
NOTES:
1
2
3
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
CONTROLLING DIMENSION : INCH.
0.65
( .0256 )
6X
DIMENSIONS DO NOT INCLUDE MOLD FLASH.
Micro8 Part Marking Information
E X
A
M
P
L E :
T HIS
IS
A
N
I
RF
7501
L
O
T CODE (XX)
P
A
R
T NUMBER
DAT E
CODE (YW) – S
ee tab
l
e
b
e
l
o
w
Y =
YE
A
R
W =
W
E E K
P =
DE S I
G
N
A
T E S
L E AD –
F
R
E E
PR
O
D
U
C
T (O
P
TI
O
N
A
L
)
WW =
(27-52) IF PRECEDED BY A LE
T
TER
WO
R
K
W
W
=
(
1-26)
IF PRE
C
E
D
E
D
BY L
A
S
T
D
I
G
I
T
O
F CA
L
E
N
DAR Y
E
A
R
WO
R
K
YE
A
R
Y
W
E
EK
W
YE
A
R
Y
W
E
EK
W
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
27
28
29
30
A
B
C
D
F
G
H
J
24
25
26
X
Y
Z
K
50
51
52
X
Y
Z
8
IRF7501PbF
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING
DIMENSION : MILLIMETER.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
9
