Infineon-Technologies-IRF7530TRPBF
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PD – 95243
IRF7530PbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
Trench Technology
1
2
3
4
8
D1
S1
G1
Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Lead-Free
V
DSS
= 20V
7
D1
6
S2
D2
5
D2
G2
R
DS(on)
= 0.030
Ω
Top View
Description
New trench HEXFET
®
power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low
on-resistance per silicon area. This benefit,
combined with the ruggedized
device design
that HEXFET
Power MOSFETs are well known for, provides the designer
wit
h
a
n
e
xtremel
y
e
fficien
t
a
n
d
r
eliabl
e
d
evic
e
f
o
r
u
s
e
i
n
a
w
ide
variet
y
o
f
a
pplications.
The new Micro8
™
package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal device for
application
s
w
her
e
p
rinte
d
c
ircui
t
b
oar
d
s
pac
e
i
s
a
t
a
p
remium.
Th
e
l
o
w
p
rofil
e
(
<1.1mm
)
o
f
t
h
e
M
icro
8
w
il
l
a
llo
w
i
t
t
o
f
i
t
e
asily
int
o
e
xtremel
y
t
hi
n
a
pplicatio
n
e
nvironment
s
s
uc
h
a
s
p
ortable
electronics and PCMCIA cards.
Micro8
™
Absolute Maximum Ratings
Parameter
Max.
Units
V
DS
Drain- Source Voltage
20
V
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
5.4
4.3
A
40
1.3
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Power Dissipation
W
Power Dissipation
0.80
Linear Derating Factor
10
mW/°C
mJ
E
AS
Single Pulse Avalanche Energy
Gate-to-Source Voltage
33
V
GS
± 12
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to
+ 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
100
Units
°C/W
R
θ
JA
1
5/13/04
IRF7530PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
20 –––
–––
V
V
GS
= 0V, I
D
= 250uA
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
––– 0.01 –––
V/°C Reference
to 25°C, I
D
= 1mA
––– –––
0.030
––– –––
0.045
0.60 –––
1.2
13 –––
–––
––– ––– 1.0
––– –––
25
––– ––– 100
––– ––– -100
V
GS
= 4.5V, I
D
= 5.4A
V
GS
= 2.5V, I
D
= 4.6A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 10V, I
D
= 5.4A
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 70°C
V
GS
= 12V
R
DS(on)
Static Drain-to-Source On-Resistance
Ω
V
GS(th)
g
fs
Gate Threshold Voltage
V
S
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
I
GSS
V
GS
= -12V
Q
g
––– 18
26
I
D
= 5.4A
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
––– 3.4 5.1
––– 3.4 5.1
––– 8.5 –––
––– 11 –––
––– 36 –––
––– 16 –––
––– 1310 –––
––– 180 –––
––– 150 –––
nC
ns
pF
V
DS
= 16V
V
GS
= 4.5V
V
DD
= 10V
I
D
= 1.0A
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 6.0
Ω
R
D
= 10
Ω
V
GS
= 0V
V
DS
= 15V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
S
I
S
MOSFET symbol
showing the
1.3
A
40
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.2
V
T
J
= 25°C, I
S
= 1.3A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.3A
––– 19
––– 13
29
20
ns
Q
rr
nC di/dt
= 100A/µs
Notes:
Repetitive rating;
pulse width limited by
When mounted on 1 inch square copper board,
t<10 sec
max. junction temperature.
Starting T
J
= 25°C, L = 2.6mH
Pulse width
≤
400µs; duty cycle
≤
2%
.
R
G
= 25
Ω
, I
AS
= 5.0A. (See Figure 10)
2
IRF7530PbF
100
100
VGS
VGS
TOP
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
TOP
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
BOTTO
M
2
.25V
2.25V
2.25V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T =
150 C
J
T =
25 C
J
10
0.1
10
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
5.0A
=
I
D
1.5
1.0
0.5
0.0
°
T =
25 C
J
°
T =
150 C
J
V
= 15V
DS
20µs PULSE WIDTH
V
=
4
.5V
GS
10
2.0
2.5
3.0
3.5 4.0
4.5
-60 -40 -20
0
20 40 60 80
100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T ,
Junction Temperature (
C)
J
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRF7530PbF
10
8
2000
5.4A
=
I
D
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
C
= C
+ C
iss
gs
gd ,
V
V
V
= 16V
= 10V
= 4V
DS
DS
DS
C
= C
rss
gd
C
= C
+ C
1600
1200
800
400
0
oss
ds
gd
C
iss
6
4
2
C
C
oss
rss
0
0
5
10
15
20
25
30
1
10
100
Q ,
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
°
T =
150 C
J
10us
100us
1ms
°
T =
25 C
J
10ms
°
T =
25 C
A
°
T =
150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
1
10
100
0.5
1.0
1.5
2.0
V ,
Drain-to-Source Voltage (V)
DS
V
,Source-to-Drain Voltage (V)
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRF7530PbF
5.0
4.0
3.0
2.0
1.0
0.0
80
60
40
20
0
I
D
TOP
2.2A
4.0A
BOTTOM 5.0A
25
50
75
100
125
150
25
50
75
100
125
150
°
°
T ,
Case Temperature
( C)
Starting T
, Junction Temperature (
C)
J
C
Fig 10.
Maximum Avalanche Energy
Fig 9.
Maximum Drain Current Vs.
Vs. Drain Current
Case Temperature
1000
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t /
t
1
2. Peak T
= P
J
x Z
+ T
A
DM
thJA
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRF7530PbF
0.10
0.08
0.06
0.04
0.02
0.04
0.03
0.02
0.01
Id = 5.0A
VGS= 2.5V
VGS = 4.5V
30 40
0
10
20
2.0
3.0
4.0
5.0
6.0
7.0
I
D
, Drain
Current (A)
V
Gate -to -Source Voltage
( V )
GS,
Fig 12.
On-Resistance Vs. Gate Voltage
Fig 13.
On-Resistance Vs. Drain Current
6
IRF7530PbF
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
INCHES
MILLIMETERS
DIM
A
D
MIN
.036
MAX
.044
.008
.014
.007
.120
MIN
0.91
0.10
0.25
0.13
2.95
MAX
1.11
0.20
0.36
0.18
3.05
3
– B –
D
8
D
D
D
D1 D1 D2 D2
A1 .004
8
1
7
6
5
4
7
6
5
B
C
D
e
.010
.005
.116
8
1
7
2
6
3
5
4
3
SINGLE
DUAL
H
E
0.25 (.010)
M
A
M
– A –
2
3
1
2
3
4
.0256 BASIC
.0128 BASIC
0.65 BASIC
0.33 BASIC
e1
E
H
L
S1 G1 S2 G2
S
S
S
G
.116
.188
.016
0°
.120
.198
.026
6°
2.95
4.78
0.41
0°
3.05
5.03
0.66
6°
e
θ
6X
e 1
RECOMMENDED FOOTPRINT
θ
1.04
( .041 )
8X
0.38
8X
A
( .015 )
– C –
B
0.10 (.004)
A 1
C
L
8X
0.08 (.003)
8X
8X
M
C
A
S
B S
3.20
( .126 )
4.24
( .167 )
( .208 )
5.28
NOTES:
1
2
3
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
CONTROLLING DIMENSION : INCH.
0.65
( .0256 )
6X
DIMENSIONS DO NOT INCLUDE MOLD FLASH.
Micro8 Part Marking Information
E X
A
M
P
L E :
T HIS
IS
A
N
I
RF 7501
L
O
T CODE (XX)
P
A
R
T NU
M
B
ER
DAT E
CODE (YW) – S
ee table below
Y =
YE
A
R
W =
W
E
E K
P =
DE S IGNAT E S
L E AD – F
R
E E
PR
O
D
U
C
T (O
P
TI
O
N
A
L
)
W
W
=
(
27-52)
IF PRE
C
E
D
E
D BY A LETTER
WO
R
K
W
W
=
(
1-26)
IF PRE
C
E
D
E
D
BY L
A
S
T
D
I
G
I
T
O
F CA
L
E
N
DAR Y
E
A
R
WO
R
K
Y
E
A
R
Y
WE
E
K
W
Y
E
A
R
Y
W
E
EK
W
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
27
28
29
30
A
B
C
D
D
F
G
H
J
24
25
26
X
Y
Z
K
50
51
52
X
Y
Z
7
IRF7530PbF
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING
DIMENSION : MILLIMETER.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
8
