Infineon-Technologies-IRF7607TRPBF
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PD – 95698
IRF7607PbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
Trench Technology
Ultra Low On-Resistance
N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Lead-Free
A
A
1
2
3
4
8
S
S
S
G
D
V
DSS
= 20V
7
D
6
D
5
D
R
DS(on)
= 0.030
Ω
Top View
Description
New trench HEXFET
®
power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low
on-resistance per silicon area. This benefit,
combined with the ruggedized
device design
that HEXFET
power MOSFETs are well known for, provides the designer
wit
h
a
n
e
xtremel
y
e
fficien
t
a
n
d
r
eliabl
e
d
evic
e
f
o
r
u
s
e
i
n
a
w
ide
variet
y
o
f
a
pplications.
The new Micro8
™
package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
application
s
w
her
e
p
rinte
d
c
ircui
t
b
oar
d
s
pac
e
i
s
a
t
a
p
remium.
Th
e
l
o
w
p
rofil
e
(
<1.1mm
)
o
f
t
h
e
M
icro
8
w
il
l
a
llo
w
i
t
t
o
f
i
t
e
asily
int
o
e
xtremel
y
t
hi
n
a
pplicatio
n
e
nvironment
s
s
uc
h
a
s
p
ortable
electronic
s
a
n
d
P
CMCI
A
c
ards.
Micro8
™
Absolute Maximum Ratings
Parameter
Max.
Units
V
DS
Drain- Source Voltage
20
V
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
6.5
5.2
A
50
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
1.8
W
Power Dissipation
1.2
Linear Derating Factor
0.014
± 12
W/°C
V
V
GS
Gate-to-Source Voltage
T
J,
T
STG
Junction and Storage Temperature Range
-55 to
+ 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
70
Units
°C/W
R
θ
JA
1
9/2/04
IRF7607PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
20 –––
–––
V
V
GS
= 0V, I
D
= 250µA
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
––– 0.016 –––
V/°C Reference
to 25°C, I
D
= 1mA
––– –––
0.030
––– –––
0.045
0.60 –––
1.2
13 –––
–––
––– ––– 1.0
––– –––
25
––– –––
-100
––– ––– 100
V
GS
= 4.5V, I
D
= 6.5A
GS
= 2.5V, I
D
= 5.2A
R
DS(on)
Static Drain-to-Source On-Resistance
Ω
V
V
GS(th)
g
fs
Gate Threshold Voltage
V
S
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 10V, I
D
= 6.5A
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 70°C
V
GS
= -12V
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
I
GSS
V
GS
= 12V
Q
g
––– 15
22
I
D
= 6.5A
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
––– 2.2 3.3
––– 3.5 5.3
––– 8.5 –––
––– 11 –––
––– 36 –––
––– 16 –––
––– 1310 –––
––– 150 –––
––– 36 –––
nC V
DS
= 10V
V
GS
= 5.0V
V
DD
= 10V
I
D
= 1.0A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 6.0
Ω
R
D
= 10
Ω
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
pF
V
DS
= 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
I
S
1.8
50
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.2
V
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
––– 19
––– 13
29
20
ns
T
J
= 25°C, I
F
= 1.7A
Q
rr
nC di/dt
= 100A/µs
Notes:
Repetitive rating;
pulse width limited by
Surface mounted on FR-4 board,
t
≤
5sec.
max. junction temperature. (See fig. 11)
Pulse width
≤
400µs; duty cycle
≤
2%
.
2
IRF7607PbF
100
10
1
100
10
1
VGS
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.50V
BOTTO
M
1
.50V
1.50V
1.50V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T =
150 C
J
T =
25 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
5.3A
=
I
D
°
T =
25 C
J
1.5
1.0
0.5
0.0
°
T =
150 C
J
10
V
= 15V
20µs PULSE WIDTH
DS
V
=
4
.5V
GS
1
1.5
-60 -40 -20
0
20 40 60 80
100 120 140 160
°
2.0
2.5
3.0 3.5
T ,
Junction Temperature (
C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRF7607PbF
2000
10
8
V
= 0V,
f = 1MHz
C SHORTED
ds
6.5A
=
I
D
GS
C
= C
+ C
iss
gs
gd ,
V
= 10V
DS
C
= C
rss
gd
C
= C
+ C
1600
1200
800
400
0
oss
ds
gd
C
iss
6
4
2
C
C
oss
rss
0
0
4
8
12
16
20
24
1
10
100
Q ,
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T =
150 C
J
10
1ms
°
T =
25 C
J
10ms
°
T =
25 C
A
°
T =
150 C
Single Pulse
J
V
= 0 V
GS
1
0.1
0.1
0.4
1
10
100
0.6
0.8
1.0
1.2
V ,
Drain-to-Source Voltage (V)
DS
V
,Source-to-Drain Voltage (V)
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRF7607PbF
0.20
0.10
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.00
Id = 250µA
-0.10
-0.20
-0.30
-0.40
-50
-25
0
25
50
75
100 125 150
25
50
75
100
125
150
°
T ,
Case Temperature
( C)
T
, Temperature ( °C )
C
J
Fig 9.
Maximum Drain Current Vs.
Fig 10.
Typical Vgs(th) Variance Vs.
Case Temperature
Juction Temperature
100
D = 0.50
0.20
0.10
0.05
10
P
2
DM
0.02
0.01
1
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T
= P
J
SINGLE PULSE
t /
t
1
x Z
(THERMAL RESPONSE)
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRF7607PbF
0.10
0.08
0.06
0.04
0.02
0.040
0.035
0.030
0.025
VGS= 2.5V
Id = 5.3A
VGS = 4.5V
30 40
0.020
0
10
I
20
2.0
3.0
4.0
5.0
6.0
7.0
8.0
– Drain Current (A )
V
Gate -to -Source Voltage
( V )
D,
GS,
Fig 12.
Typical On-Resistance Vs.
Fig 13.
Typical On-Resistance Vs.
Gate Voltage
Drain Current
6
IRF7607PbF
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
INCHES
MILLIMETERS
DIM
A
D
MIN
.036
MAX
.044
.008
.014
.007
.120
MIN
0.91
0.10
0.25
0.13
2.95
MAX
1.11
0.20
0.36
0.18
3.05
3
– B –
D
8
D
7
D
6
D
5
D1 D1 D2 D2
A1 .004
8
1
7
6
5
4
B
C
D
e
.010
.005
.116
8
1
7
2
6
3
5
4
3
SINGLE
DUAL
H
E
0.25 (.010)
M
A
M
– A –
1
2
3
4
2 3
.0256 BASIC
.0128 BASIC
0.65 BASIC
0.33 BASIC
e1
E
H
L
S
S
S
G
S1 G1 S2 G2
.116
.188
.016
0°
.120
.198
.026
6°
2.95
4.78
0.41
0°
3.05
5.03
0.66
6°
e
θ
6X
e 1
RECOMMENDED FOOTPRINT
θ
1.04
( .041 )
8X
A
0.38
8X
( .015 )
– C –
B
0.10 (.004)
A 1
C
L
8X
0.08 (.003)
8X
8X
M
C
A
S
B S
3.20
( .126 )
4.24
( .167 )
5.28
( .208 )
NOTES:
1
2
3
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
CONTROLLING DIMENSION : INCH.
0.65
( .0256 )
6X
DIMENSIONS DO NOT INCLUDE MOLD FLASH.
Micro8 Part Marking Information
EX
A
M
P
LE: THIS IS
A
N
I
RF7501
L
O
T CO
D
E (XX)
P
A
R
T NU
M
B
ER
D
A
T E
CODE (YW) – S ee tab
l
e
b
e
l
o
w
Y =
Y
E
A
R
W =
W
E
EK
P =
DE S I
G
NAT E S
L E AD – F
R
E E
PR
O
D
U
C
T (O
P
TI
O
NA
L
)
W
W
=
(
27-52)
IF PRE
C
E
D
E
D BY A LETTER
WO
R
K
W
W
=
(
1-26)
IF PRE
C
E
D
E
D
BY L
A
S
T
D
I
G
I
T
O
F CA
L
E
N
DAR Y
E
A
R
WO
R
K
Y
E
A
R
Y
WE
E
K
W
Y
E
A
R
Y
W
E
EK
W
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
27
28
29
30
A
B
C
D
F
G
H
J
24
25
26
X
Y
Z
K
50
51
52
X
Y
Z
7
IRF7607PbF
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING
DIMENSION : MILLIMETER.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
8
