Infineon-Technologies-IRF7815TRPBF
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PD – 96284
IRF7815PbF
HEXFET
®
Power MOSFET
Applications
l
Synchronous MOSFET for Notebook
V
DSS
R
DS(on)
max
Qg (typ.)
25nC
43m @V
GS
= 10V
150V
Processor Power
l
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
A
A
D
1
8
S
Benefits
2
7
S
D
l
Very Low R
DS(on)
at 10V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
l
20V V
GS
Max. Gate Rating
3
6
S
D
4
5
G
D
SO-8
Top View
Absolute Maximum Ratings
Parameter
Max.
150
± 20
5.1
Units
V
DS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
V
V
GS
I
I
I
@ T
A
= 25°C
D
D
@ T
A
= 70°C
4.1
A
41
DM
Power Dissipation
P
P
@T
A
= 25°C
@T
A
= 70°C
2.5
W
D
D
Power Dissipation
1.6
Linear Derating Factor
Operating Junction and
0.02
-55 to
+ 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
R
θ
JL
R
θ
JA
°C/W
–––
50
Notes
through
ꢀ
are on page 9
1
12/01/09
IRF7815PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max.
Units
Conditions
V
GS
= 0V, I
D
= 250µA
BV
DSS
150
–––
0.17
34
–––
V
∆Β
V
DSS
/
∆
T
J
R
DS(on)
Breakdown Voltage Temp. Coefficient
–––
––– V/°C
Reference to 25°C, I
D
= 1mA
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
3.0
43
V
GS
= 10V, I
D
= 3.1A
Ω
m
V
GS(th)
4.0
5.0
V
V
DS
= V
GS
, I
D
= 100µA
∆
V
GS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– -12.2 –––
mV/°C
I
DSS
–––
–––
–––
–––
8.2
–––
–––
–––
–––
–––
25
20
250
100
-100
–––
38
V
DS
= 150V, V
GS
= 0V
µA
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
GS
= -20V
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
S
V
gfs
Q
g
V
DS
= 50V, I
D
= 3.1A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Q
gs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Source Charge
6.5
1.3
7.8
7.4
9.8
8..7
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS
= 75V
Q
gs2
Q
gs
V
GS
= 10V
I
D
= 3.1A
nC
Q
gd
Gate-to-Drain Charge
See Figs. 6, 16a & 16b
Q
godr
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Q
sw
Q
oss
R
G
Output Charge
nC V
DS
= 16V, V
GS
= 0V
Ω
Gate Resistance
Turn-On Delay Time
Rise Time
1.02
8.4
3.2
14
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 75V, V
GS
= 10V
I
D
= 3.1A
ns
pF
Turn-Off Delay Time
Fall Time
Ω
R
G
= 1.8
8.3
See Figs. 15a & 15b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1647 –––
V
GS
= 0V
–––
–––
129
30
–––
–––
V
DS
= 75V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
E
AS
I
AR
529
3.1
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
–––
–––
2.3
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
I
SM
–––
–––
41
(Body Diode)
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
–––
–––
–––
–––
41
1.3
62
V
T =
25°C, I
= 3.1A, V
= 0V
J S
GS
Reverse Recovery Time
Reverse Recovery Charge
ns T
= 25°C, I
= 3.1A, V
DD
= 75V
J F
Q
rr
di/dt = 300A/µs
213
320
nC
2
IRF7815PbF
100
10
100
10
1
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM
BOTTOM
1
5.0V
0.1
0.01
60µs PULSE WIDTH
Tj = 150°C
5.0V
≤
≤
60µs PULSE
WIDTH Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
100
10
1
I
= 5.1A
D
V
= 50V
DS
V
= 10V
GS
≤
60µs PULSE WIDTH
T
= 150°C
J
T
= 25°C
J
0.1
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
-60 -40 -20
0
20 40 60 80
100 12
0
1
40 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRF7815PbF
100000
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I =
3.1A
D
C
C
C
+ C
, C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
V
= 120V
= 75V
DS
= C
+ C
ds
gd
10000
1000
100
V
DS
VDS= 30V
C
iss
6.0
C
oss
4.0
C
rss
2.0
10
0.0
1
10
100
1000
0
5
10
15
20
25
30
35
V
, Drain-to-Source Voltage (V)
Q ,
Total Gate Charge (nC)
DS
G
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
T
= 150°C
J
10msec
1msec
T
= 25°C
J
T
= 25°C
A
Tj = 150°C
Single Pulse
V
GS
= 0V
0.1
0.3
0.5
0.7
0.9
0
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
DS
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRF7815PbF
6
5
4
3
2
1
0
6.0
5.0
4.0
3.0
2.0
I
I
I
= 100uA
= 150uA
= 250uA
D
D
D
ID = 1.0mA
= 1.0A
I
D
25
50
75
100
125
150
-75 -50 -25
0
25 50 75
100 125 150
T
, Ambient Temperature (°C)
T ,
Temperature ( °C )
A
J
Fig 10.
Threshold Voltage Vs. Temperature
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
100
D = 0.50
10
1
0.20
0.10
0.05
0.02
0.01
R
1
R
1
R
2
R
2
R
3
R
3
R
4
R
4
Ri (°C/W)
τ
i (sec)
τ
J
τ
J
τ
2.8482
0.012383
0.1
A
τ
A
τ
τ
1
τ
1
τ
τ
16.4171
36.75014
2
τ
2
3
τ
3
4
τ
4
20.8292 5.677801
9.8220 0.525832
0.01
0.001
0.0001
Ci=
τ
i
/
Ri
Ci=
τ
i
/
Ri
Notes:
1. Duty Factor D = t1/t2
SINGLE PULSE
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthja + T
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRF7815PbF
100
90
80
70
60
50
2500
2000
1500
1000
500
I
I
= 5.1A
D
D
TOP
0.30A
0.44A
BOTTOM 3.1A
T
= 125°C
J
T
= 25°C
J
40
30
20
0
4
6
8
10
12 14 16
18 20
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
J
V
Gate -to -Source Voltage
(V)
GS,
Fig 12.
On-Resistance Vs. Gate Voltage
Fig 13c.
Maximum Avalanche Energy
Vs. Drain Current
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
V
GS
Ω
0.01
t
p
I
AS
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
R
D
V
DS
V
DS
90%
V
GS
D.U.T.
R
G
+
V
DD
–
10%
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
6
IRF7815PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 16b.
Gate Charge Waveform
Fig 16a.
Gate Charge Test Circuit
Driver Gate Drive
P
.
W.
Period
D =
D.U.T
Period
P.W.
+
V
***
=10V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
*
V
DD
**
Re-Applied
Voltage
•
dv/dt controlled by R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
Use P-Channel Driver for P-Channel Measurements
**
Reverse Polarity for P-Channel
***
V
GS
= 5V for Logic Level Devices
Fig 17.
Diode Reverse Recovery Test Circuit
for HEXFET
®
Power MOSFETs
7
IRF7815PbF
SO-8 Package Outline
(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
8
IRF7815PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 110mH, R
G
= 25
Ω
, I
AS
= 3.1A
Pulse width
≤
400µs; duty cycle
≤
2%.
When mounted on 1 inch square
copper board.
ꢀ
R
is measured at
T
J
of approximately 90°C.
θ
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
9
