Infineon-Technologies-IRF7831TRPBF
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PD – 95134B
IRF7831PbF
HEXFET
®
Power MOSFET
Applications
V
DSS
30V
R
DS(on)
max
Qg (typ.)
40nC
l
High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
Computing Systems.
3.6m
:
@V
GS
= 10V
A
A
1
8
S
D
Benefits
2
7
S
D
l
Very Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
l
100
%
T
este
d
f
o
r
R
G
l
Lead-Free
3
6
S
D
4
5
G
D
SO-8
Top View
Absolute Maximum Ratings
Parameter
Max.
30
Units
V
V
DS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
V
± 12
21
GS
I
I
I
@ T
A
= 25°C
D
D
@ T
A
= 70°C
17
A
170
2.5
1.6
DM
Power Dissipation
P
P
@T
A
= 25°C
@T
A
= 70°C
W
D
D
Power Dissipation
Linear Derating Factor
Operating Junction and
0.02
-55 to
+ 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
°C/W
R
θ
JL
R
θ
JA
–––
50
Notes
through
are on page 10
1
6/30/05
IRF7831PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Units
30 –––
–––
––– 0.025 –––
Conditions
V
GS
= 0V, I
D
= 250µA
BV
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
∆Β
V
DSS
/
∆
T
J
R
DS(on)
V/°C Reference
to 25°C, I
D
= 1mA
m
Ω
2.5
3.0
3.1
3.7
–––
– 5.7
–––
–––
–––
–––
–––
40
3.6
4.4
V
V
V
GS
= 10V, I
D
= 20A
GS
= 4.5V, I
D
= 16A
DS
= V
GS
, I
D
= 250µA
V
GS(th)
∆
V
GS(th)
I
DSS
Gate Threshold Voltage
1.35
–––
–––
–––
–––
–––
97
2.35
V
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
1.0
150
100
-100
–––
60
µA V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
S
V
V
GS
= 12V
GS
= -12V
gfs
V
DS
= 15V, I
D
= 16A
Q
g
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
12
–––
–––
–––
–––
–––
–––
2.5
V
DS
= 15V
nC V
GS
= 4.5V
D
= 16A
3.1
11
I
Gate Charge Overdrive
14
See Fig. 16
Switch Charge (Q
gs2
+ Q
gd
Output Charge
)
14
22
nC V
DS
= 16V, V
GS
= 0V
Ω
Gate Resistance
Turn-On Delay Time
Rise Time
1.4
18
t
d(on)
t
r
t
d(off)
t
f
–––
–––
–––
–––
V
DD
= 15V, V
GS
= 4.5V
I
D
= 16A
10
Turn-Off Delay Time
Fall Time
17
ns Clamped
Inductive Load
5.3
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
––– 6240 –––
V
GS
= 0V
–––
–––
980
390
–––
–––
pF
V
DS
= 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
Avalanche Current
E
AS
I
AR
100
16
A
Diode Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
I
S
Continuous Source Current
–––
–––
2.5
MOSFET symbol
(Body Diode)
A
showing the
I
SM
Pulsed Source Current
–––
–––
170
integral reverse
(Body Diode)
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
–––
–––
–––
–––
42
1.2
62
47
V
T =
25°C, I
= 16A, V
= 0V
GS
J
S
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T
= 25°C, I
= 16A, V
DD
= 25V
J F
Q
rr
t
on
2
31
nC di/dt
= 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
IRF7831PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
BOTTOM 2.25V
1
2.25V
1
0.1
0.01
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
2.25V
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
2.0
I
= 20A
D
V
= 10V
GS
100.0
10.0
1.0
1.5
1.0
0.5
T
= 150°C
J
T
= 25°C
V
J
= 15V
DS
20µs PULSE WIDTH
0.1
2.0
2.5
3.0
3.5
4.0
-60 -40 -20
T
0
20 40 60 80
100 120 140 160
V
, Gate-to-Source Voltage (V)
, Junction Temperature (°C)
GS
J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRF7831PbF
100000
12
10
8
V
= 0V,
= C
f = 1 MHZ
GS
I
= 12A
C
C
C
+ C
, C
SHORTED
D
V
= 24V
iss
gs
gd
ds
DS
VDS= 15V
= C
rss
oss
gd
= C
+ C
ds
gd
10000
1000
100
Ciss
6
Coss
Crss
4
2
0
0
20
Q
40
60
80
100
1
10
100
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100.0
10.0
1.0
T
= 150°C
J
100µsec
1msec
T
= 25°C
J
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
10msec
100.0
1
0.1
0.1 1.0
10.0
1000.0
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRF7831PbF
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
24
20
16
12
8
I
= 250µA
D
4
0
-75 -50 -25
0
25
50
75 100
125 150
25
50
75
100
125
150
T
, Temperature ( °C )
T
J
, Junction Temperature (°C)
J
Fig 10.
Threshold Voltage Vs. Temperature
Fig 9.
Maximum Drain Current Vs.
Case Temperature
100
D = 0.50
0.20
10
1
0.10
0.05
0.02
0.01
Ri (°C/W)
τ
i (sec)
R
1
R
1
R
2
R
2
R
3
R
3
R
4
R
4
R
5
R
5
0.514
2.445
20.64
0.000182
τ
τ
C
J
τ
J
τ
0.1
0.030949
0.36354
6.99
τ
1
τ
1
τ
τ
τ
2
τ
2
3
τ
3
4
τ
4
5
τ
5
17.80
8.604
109
Ci=
τ
i
/
Ri
0.01
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRF7831PbF
500
400
300
200
100
0
15V
I
D
TOP
11A
13A
16A
DRIVER
+
L
BOTTOM
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
V
GS
0.01
Ω
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
J
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
L
D
I
AS
V
DS
Fig 12b.
Unclamped Inductive Waveforms
+
–
V
DD
D.U.T
V
GS
Current Regulator
Same Type as D.U.
T
.
Pulse Width < 1µs
Duty Factor < 0.1%
50K
Ω
.2
µ
F
12V
Fig 14a.
Switching Time Test Circuit
V
DS
.3
µ
F
+
V
DS
D.U.
T
.
–
90%
V
GS
3mA
10%
V
GS
I
I
D
G
Current Sampling Resistors
t
d(on)
t
d(off)
t
r
t
f
Fig 13.
Gate Charge Test Circuit
Fig 14b.
Switching Time Waveforms
6
IRF7831PbF
Driver Gate Drive
P.W.
P
.
W.
D =
Period
D.U.T
Period
+
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/dt controlled by R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 15.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 16.
Gate Charge Waveform
7
IRF7831PbF
Power MOSFET Selection for Non-Isolated DC/DC Converters
Synchronous FET
Control FET
The power loss equation for Q2 is approximated
by;
Special attention has been given to the power losses
in the switching elements of the circuit – Q1 and Q2.
Power losses in the high side switch Q1, also called
the Control FE
T
,
a
re impacted by the R
ds(on)
of the
MOSFE
T
,
b
ut these conduction losses are only about
one half of the total losses.
P
=
P
+
P
+
P
*
loss
conduction
drive
output
P
=
I
rms
2
×
R
ds(on)
loss
( )
Power losses in the control switch Q1 are given
by;
+
Q
×
V
×
f
(
)
g
g
⎛
⎜
Q
oss
⎞
⎠
P
loss
= P
conduction
+ P
switching
+ P
drive
+ P
output
+
×
V
×
f
+
Q
×
V
×
f
(
)
in
rr
in
⎝
2
This can be expanded and approximated by;
*dissipated primarily in Q1.
P
=
I
2
×
R
ds
(
o
n
)
(
)
loss
rms
For the synchronous MOSFET Q2, R
ds(on)
is an im-
portant characteristic; however, once again the im-
portance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly,
the output charge Q
oss
and re-
verse recovery charge Q
rr
both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFE
T
s
’ susceptibility to Cdv/dt turn on.
⎛
⎛
Q
gd
i
g
⎞
Q
g
s
2
i
g
⎞
⎟
⎜
⎟
⎜
+
I
×
×
V
×
f
+
I
×
×
V
×
f
in
in
⎝
⎠
⎝
⎠
+
Q
×
V
×
f
(
)
g
g
⎛
Q
oss
⎞
⎠
+
×
V
×
f
in
⎝
2
This simplified loss equation includes the terms Q
gs2
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions be-
tween ground and V
in
. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of
Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Q
gd
/Q
gs1
must be minimized to reduce the
potential for Cdv/dt turn on.
and Q
oss
which are new to Power MOSFET data sheets.
Q
gs2
is a sub element of traditional gate-source
charge that is included in all MOSFET data sheets.
The importance of splitting this gate-source charge
into two sub elements, Q
gs1
and Q
gs2
, can be seen from
Fig 16.
Q
gs2
indicates the charge that must be supplied by
the gate driver between the time that the threshold
voltage has been reached
and the time the drain cur-
rent rises to I
dmax
at which time the drain voltage be-
gins to change. Minimizing Q
gs2
is a critical factor in
reducing switching losses in Q1.
Q
oss
is the charge that must be supplied to the out-
put capacitance of the MOSFET during every switch-
ing cycle. Figure A shows how Q
oss
is formed by the
parallel combination of the voltage dependant (non-
linear) capacitances C
ds
and C
dg
when multiplied by
the power supply input buss voltage.
Figure A:
Q
oss
Characteristic
8
IRF7831PbF
SO-8 Package Outline
INCH
E
S
MI
L
LI
M
E
TERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1
.
0040
b
c
D
E
.013
8
1
7
2
6
3
5
4
.0075
.189
.0098
.1968
.1574
6
H
E
0.25 [.010]
A
.1497
e
.050
B
A
S
I
C
1.27
B
A
S
I
C
e 1
.025
B
A
S
I
C
0.635
B
A
S
I
C
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F
O
O
T
PRINT
8X 0.72 [.028]
NO
T
ES:
1. DIM
E
N
S
I
ONING
&
T
O
L
ER
A
N
CING P
E
R
A
S ME
Y
14.5M-1994.
2.
C
ON
T
R
O
L
LING
DIMEN
S
I
ON: MI
L
LI
M
E
TER
3. DIM
E
N
S
I
ONS A
R
E SH
O
WN
IN MI
L
LI
M
E
TERS
[
INCH
E
S
]
.
4. O
U
T
LINE
C
O
N
F
O
R
M
S T
O J
E
DE C
O
U
T LINE
M
S -012
A
A.
5
6
7
DIM
E
N
S
I
ON DO
E
S
N
OT INC
L
UDE
M
O
L
D PR
O
T
RUS
I
ON
S
.
MO
L
D PR
O
T
RUS
I
ONS NOT
T
O E
X
C
E
ED
0
.15 [.006].
6.46 [.255]
DIM
E
N
S
I
ON DO
E
S
N
OT INC
L
UDE
M
O
L
D PR
O
T
RUS
I
ON
S
.
MO
L
D PR
O
T
RUS
I
ONS NOT
T
O E
X
C
E
ED
0
.25 [.010].
DIM
E
N
S
I
ON IS
T
HE LEN
G
T
H
O
F
L
E
A
D
F
O
R
S
O
L
D
E
RING TO
A S U B S T R AT E .
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
E
X
A
M
P
LE: THIS IS
A
N
I
RF7101 (
M
O
S
FET)
DA
T
E
C
ODE (YWW)
P =
D
E
S
I
GNA
T
ES LE
A
D-
F
REE
PR
O
D
U
C
T (O
P
TI
O
NA
L
)
Y =
L
A
S
T
D
IGIT OF
T
HE
Y
E
A
R
WW =
W
E
EK
XXXX
F
7
101
IN
T
ER
N
A
T
I
ONAL
RE
C
T
I
FIER
L
O
GO
A =
A
S
SE
M
B
LY S
I
T
E
C
ODE
L
O
T CODE
P
A
R
T NU
M
B
ER
9
IRF7831PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.76mH
R
G
= 25
Ω
, I
AS
= 16A.
Pulse width
≤
400µs; duty cycle
≤
2%.
When mounted on 1 inch square copper board
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
10
