Infineon-Technologies-IRF7862TRPBF
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PD – 97275B
IRF7862PbF
HEXFET
®
Power MOSFET
Applications
l
Synchronous MOSFET for Notebook
Processor Power
l
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
V
DSS
30V
R
DS(on)
max
3.3m @V
GS
= 10V
Qg
30nC
A
A
D
1
2
3
4
8
S
S
S
G
Benefits
7
D
l
Very Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
6
D
5
D
SO-8
Top View
l
20V V
GS
Max. Gate Rating
l
100% tested for Rg
l
Lead-Free
Absolute Maximum Ratings
Parameter
Max.
30
Units
V
DS
Drain-to-Source Voltage
V
V
Gate-to-Source Voltage
± 20
21
GS
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
I
I
@ T
A
= 25°C
D
D
@ T
A
= 70°C
17
A
170
2.5
1.6
DM
P
P
@T
A
= 25°C
@T
A
= 70°C
Power Dissipation
Power Dissipation
D
D
W
Linear Derating Factor
Operating Junction and
0.02
-55 to
+ 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
R
θ
JL
R
θ
JA
°C/W
–––
50
Notes
through
ꢀ
are on page 9
1
06/04/09
IRF7862PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max.
Units
30 –––
–––
Conditions
V
GS
= 0V, I
D
= 250µA
BV
DSS
∆Β
V
∆
V
DSS
/ T
J
Breakdown Voltage Temp. Coefficient
––– 0.023 –––
V/°C Reference
to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
–––
3.0
3.7
3.3
4.5
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 16A
V
DS
= V
GS
, I
D
= 100µA
Ω
m
V
GS(th)
Gate Threshold Voltage
1.35 –––
2.35
V
∆
I
DSS
V
GS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
87
-5.4
–––
–––
–––
–––
–––
30
––– mV/°C
V
DS
= V
GS
, I
D
= 250µA
1.0
150
100
-100
–––
45
V
DS
= 24V, V
GS
= 0V
µA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
GS
= 20V
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
nA
S
V
GS
= -20V
gfs
Q
g
V
DS
= 15V, I
D
= 16A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Q
gs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
7.5
3.1
9.8
9.6
12.9
18
–––
–––
–––
–––
–––
–––
1.6
V
DS
= 15V
V
GS
= 4.5V
Q
gs2
Q
gd
nC
I
D
= 16A
Q
godr
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
See Figs. 15 & 16
Q
sw
Q
oss
R
g
Output Charge
nC V
DS
= 16V, V
GS
= 0V
Gate Resistance
Turn-On Delay Time
Rise Time
1.0
16
Ω
t
d(on)
t
r
t
d(off)
t
f
–––
–––
–––
–––
V
DD
= 15V, V
GS
= 4.5V
D
= 16A
R =
1.8
19
I
ns
pF
Turn-Off Delay Time
Fall Time
18
Ω
G
11
See Fig. 18
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 4090 –––
–––
–––
810
390
–––
–––
V
DS
= 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
350
16
Units
mJ
Single Pulse Avalanche Energy
E
AS
I
AR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
D
S
I
S
Continuous Source Current
MOSFET symbol
–––
–––
3.1
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
I
SM
–––
–––
170
(Body Diode)
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
–––
–––
–––
–––
17
1.0
26
50
V
T =
25°C, I
= 16A, V
= 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T
= 25°C, I
= 16A, V
DD
= 15V
J F
Q
rr
t
on
di/dt = 430A/µs
33
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
IRF7862PbF
1000
100
10
1000
100
10
60µs PULSE WIDTH
Tj = 25°C
VGS
10V
≤
VGS
10V
60µs PULSE WIDTH
Tj = 150°C
≤
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
BOTTOM
BOTTOM
1
0.1
0.01
2.3V
2.3V
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
1000
100
10
1.6
1.4
1.2
1.0
0.8
0.6
I
= 21A
V
= 15V
D
DS
≤
60µs PULSE WIDTH
V
= 10V
GS
T
= 150°C
T
= 25°C
J
J
1
0.1
1
2
3
4
-60 -40 -20
0
20 40 60 80
100 12
0
1
40 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4.
Normalized On-Resistance
Fig 3.
Typical Transfer Characteristics
vs. Temperature
3
IRF7862PbF
100000
5.0
4.0
3.0
2.0
1.0
0.0
V
= 0V,
= C
f = 1 MHZ
GS
I =
16A
D
C
C
C
+ C
, C
SHORTED
ds
iss
gs
gd
= C
V
V
= 24V
= 15V
rss
oss
gd
DS
DS
= C
+ C
ds
gd
10000
1000
100
C
iss
C
oss
C
rss
1
10
, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
35
V
Q , Total
Gate Charge (nC)
DS
G
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
1msec
T
= 150°C
10msec
J
T
= 25°C
J
1
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1.0
10
100
V
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRF7862PbF
2.5
2.3
2.0
1.8
1.5
1.3
1.0
25
20
15
10
5
I
= 250µA
D
0
-75 -50 -25
0
25 50 75
100 125 150
25
50
75
100
125
150
T ,
Temperature ( °C )
T
, Ambient Temperature (°C)
J
A
Fig 9.
Maximum Drain Current vs.
Fig 10.
Threshold Voltage vs. Temperature
Ambien
t
T
emperature
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
SINGLE PULSE
( THERMAL RESPONSE )
0.1
R
1
R
1
R
2
R
2
R
3
R
3
R
4
R
4
P
2
DM
0.01
0.001
0.0001
Ri (°C/W)
τ
i (sec)
τ
t
1
τ
J
τ
J
τ
1.242
0.000172
0.031397
1.2211
A
τ
A
t
2
τ
1
τ
1
τ
τ
4.759
2
τ
2
3
τ
3
4
τ
4
Notes:
1. Duty factor D =
t /
t
28.506
15.507
1
Ci=
τ
i
/
Ri
Ci=
τ
i
/
Ri
2. Peak T
=
P
J
x Z
+ T
thJA A
44.5
DM
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRF7862PbF
12
10
8
1600
1400
1200
1000
800
600
400
200
0
I
I
= 21A
D
D
TOP
1.0A
1.4A
BOTTOM 16A
T
= 125°C
6
J
4
T
= 25°C
J
2
2
3
4
5
6
7
8
9
10 11 12
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
J
V
Gate -to -Source Voltage
(V)
GS,
Fig 13.
Maximum Avalanche Energy
Fig 12.
On-Resistance vs. Gate Voltage
vs. Drain Current
V
(BR)DSS
15V
t
p
L
VCC
DRIVER
+
L
V
DUT
DS
0
1
20K
D.U.T
AS
R
G
V
DD
–
I
A
20V
0.01
Ω
t
p
I
AS
Fig 15.
Gate Charge Test Circuit
Fig 14.
Unclamped Inductive Test Circuit
and Waveform
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgodr
Qgd
Fig 16.
Gate Charge Waveform
6
IRF7862PbF
Driver Gate Drive
P.W.
P
.
W.
D =
D.U.T
Period
Period
+
–
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/dt controlled by R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 17.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
R
D
V
DS
V
DS
90%
V
GS
D.U.T.
R
G
+
V
DD
–
10%
V
GS
V
Puls
e
W
idth
≤ 1
µs
Duty Facto
r
≤ 0.1 %
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18a.
Switching Time Test Circuit
Fig 18b.
Switching Time Waveforms
7
IRF7862PbF
SO-8 Package Outline
(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
8
IRF7862PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 2.7mH, R
G
= 25
Ω
, I
AS
= 16A.
Pulse width
≤
400µs; duty cycle
≤
2%.
When mounted on 1 inch square
copper board.
ꢀ
R
is measured at
T
J
of approximately 90°C.
θ
Revision History
Date
Comment
6/4/2009
Ω
Ω
Maximum Rds(on) at Vgs =10V changed from 3.7m
to 3.3m
. All other parameters are unchanged.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
9
