Infineon-Technologies-IRF8301MTRPBF
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Strong
IR
FET
IRF8301MTRPbF
Typical values (unless otherwise specified)
l
Ultra-low R
DS(on)
V
DSS
V
GS
R
DS(on)
R
DS(on)
l
Low Profile (<0.7 mm)
30V max
±20V max
1.3m
Ω
@10V 1.9m
Ω
@ 4.5V
l
Ultra-low Package Inductance
l
Optimized for high speed switching or high current
switch (Power
T
o
ol)
l
Low Conduction and Switching Losses
DirectFET
ISOMETRIC
MT
SQ
SX
ST
MQ
MX
MP
MT
Description
The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile.
The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF8301MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses and very high current carrying capability make this product ideal for power tools.
Ordering Information
Ba
s
e
P
art Number
Package Type
Standard Pack
Form
Tape and Reel
Orderable Part Number
Quantity
4800
IRF8301MPbF
DirectFET MT
IRF8301MTRPbF
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Max.
±20
34
Units
V
GS
I
I
I
I
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
D
D
D
@ T
A
= 70°C
@ T
C
= 25°C
27
A
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
192
250
260
25
DM
Single Pulse Avalanche Energy
Avalanche Current
E
AS
I
AR
mJ
A
6
5
4
3
2
1
0
5.0
4.0
3.0
2.0
1.0
0.0
I
= 32A
I =
25A
D
D
V
= 24V
= 15V
DS
V
DS
T
= 125°C
J
T
= 25°C
5
J
0
10
15
20
0
10
20
30
40
50
60
Q ,
Total Gate Charge (nC)
G
V
Gate -to -Source Voltage
(V)
GS,
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Typical Total
Gate Charge vs. Gate-to-Source Voltage
www.irf.com
© 2013 International Rectifier
September 6, 2013
1
IRF8301MTRPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Units
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
21
–––
V
V
GS
= 0V, I
D
= 250µA
∆Β
V
D
S
S
/
∆
T
J
R
D
S
(
on)
–––
–––
–––
1.35
–––
–––
–––
–––
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– mV/°C
Reference to 25°C, I
D
= 1mA
1.3
1.9
1.7
-6.0
–––
–––
–––
–––
–––
51
1.5
2.4
m
Ω
V
GS
= 10V, I
D
= 32A
V
GS
= 4.5V, I
D
= 25A
V
DS
= V
GS
, I
D
= 150µA
V
GS(th)
Gate Threshold Voltage
2.35
V
∆
V
GS(th)
/
∆
T
J
I
DSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
1.0
150
100
-100
–––
77
µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA V
GS
= 20V
V
GS
= -20V
gfs
S
V
DS
= 15V, I
D
= 25A
Q
g
Q
g
s
1
Q
g
s
2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
g
s
2
+ Q
gd
)
Output Charge
12
–––
–––
–––
–––
–––
–––
3.0
V
DS
= 15V
GS
= 4.5V
5.4
16
nC
V
I
D
= 25A
18
See Fig. 15
21
28
nC
V
DS
= 16V, V
GS
= 0V
Ω
Gate Resistance
1.0
20
t
d
(
on)
t
r
t
d
(
off)
t
f
Turn-On Delay Time
–––
–––
–––
–––
V
DD
= 15V, V
GS
= 4.5V
Rise Time
30
ns I
D
= 25A
R
G
= 1.8
Ω
Turn-Off Delay Time
25
See Fig. 17
Fall Time
17
C
iss
C
oss
C
rss
Input Capacitance
––– 6140 –––
––– 1270 –––
V
GS
= 0V
Output Capacitance
pF V
DS
= 15V
ƒ = 1.0MHz
Reverse Transfer Capacitance
–––
590
–––
Diode Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
MOSFET symbol
I
S
Continuous Source Current
(Body Diode)
–––
–––
110
showing the
A
integral reverse
I
SM
Pulsed Source Current
(Body Diode)
–––
–––
250
p-n junction diode.
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
0.77
27
1.0
41
68
V
ns T
J
= 25°C, I
F
= 25A
di/dt = 500A/µs
nC
Q
rr
45
Notes
:
T
C
measured with thermocouple mounted to top (Drain) of part.
ꢀ
Repetitive rating;
pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.82mH, R
G
= 25
Ω
, I
AS
= 25A.
Pulse width
≤
400µs; duty cycle
≤
2%.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
© 2013 International Rectifier
September 6, 2013
2
IRF8301MTRPbF
Absolute Maximum Ratings
Max.
Parameter
Units
2.8
P
P
P
@T
A
= 25°C
@T
A
= 70°C
@T
C
= 25°C
Power Dissipation
Power Dissipation
Power Dissipation
W
D
D
D
P
J
1.8
89
270
Peak Soldering Temperature
Operating Junction and
°C
T
T
T
-40 to
+ 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
45
Units
°C/W
W/°C
R
θ
JA
Junction-to-Ambient
R
θ
JA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
–––
–––
1.4
R
θ
JA
R
θ
JC
–––
1.0
R
θ
J-PCB
Junction-to-PCB Mounted
Linear Derating Factor
–––
0.022
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 4.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
3
www.irf.com
© 2013 International Rectifier
September 6, 2013
IRF8301MTRPbF
Notes:
R
is measured at
T
J
o
f approximately 90°C.
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
θ
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
Mounted to a PCB
with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu
(still air).
www.irf.com
© 2013 International Rectifier
September 6, 2013
4
IRF8301MTRPbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
BOTTOM
BOTTOM
2.5V
2.5V
1
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
≤
Tj = 150°C
≤
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 5.
Typical Output Characteristics
Fig 6.
Typical Output Characteristics
2.0
1.5
1.0
0.5
1000
100
10
I
= 32A
V
= 15V
D
DS
≤
60µs PULSE WIDTH
V
V
= 10V
GS
GS
= 4.5V
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1
0.1
1.0
1.5
V
2.0
2.5
3.0
3.5
4.0
-60 -40 -20
0
20 40 60 80
100 12
0
1
40 160
T
J
, Junction Temperature (°C)
, Gate-to-Source Voltage (V)
GS
Fig 8.
Normalized On-Resistance vs. Temperature
Fig 7.
Typical Transfer Characteristics
5
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
Vgs = 3.5V
GS
T
= 25°C
J
C
C
C
+ C
, C
SHORTED
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 8.0V
Vgs = 10V
iss
gs
gd
ds
= C
rss
oss
gd
4
3
2
1
0
= C
+ C
ds
gd
C
iss
C
oss
C
rss
100
0
50
100
150
200
1
10
, Drain-to-Source Voltage (V)
100
V
I ,
Drain Current (A)
DS
D
Fig 10.
Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig 9.
Typical Capacitance vs.Drain-to-Source Voltage
5
www.irf.com
© 2013 International Rectifier
September 6, 2013
IRF8301MTRPbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
10msec
DC
(on)
DS
T
T
T
= 150°C
= 25°C
= -40°C
100µsec
J
J
J
1msec
1
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0
0
1
10
100
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
V
DS
SD
Fig 11.
Typical Source-Drain Diode Forward Voltage
Fig 12.
Maximum Safe Operating
Area
3.0
2.5
2.0
1.5
1.0
0.5
200
160
120
80
I
I
I
I
I
= 100µA
= 150µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
D
40
0
-75 -50 -25
0
25 50 75
100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
J
, Case Temperature (°C)
C
Fig 14.
Typical Threshold Voltage vs. Junction
Fig 13.
Maximum Drain Current vs. Case Temperature
Temperature
1200
I
D
TOP
2.7A
3.9A
1000
800
600
400
200
0
BOTTOM 25A
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
J
Fig 15.
Maximum Avalanche Energy vs. Drain Current
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© 2013 International Rectifier
September 6, 2013
6
IRF8301MTRPbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 16a.
Gate Charge Test Circuit
Fig 16b.
Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
V
R
D.U.T
AS
GS
G
V
DD
–
I
A
20V
t
0.01
Ω
p
I
AS
Fig 17b.
Unclamped Inductive Waveforms
Fig 17a.
Unclamped Inductive Test Circuit
R
D
V
DS
V
DS
90%
V
GS
D.U.T.
R
G
+
V
DD
–
V
GS
10%
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18a.
Switching Time Test Circuit
Fig 18b.
Switching Time Waveforms
7
www.irf.com
© 2013 International Rectifier
September 6, 2013
IRF8301MTRPbF
Driver Gate Drive
P.W.
P
.
W.
D =
D.U.T
Period
Period
+
V
***
=10V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
–
+
di/dt
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
*
V
DD
**
Re-Applied
Voltage
•
dv/dt controlled by R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
Use P-Channel Driver for P-Channel Measurements
**
Reverse Polarity for P-Channel
***
V
GS
= 5V for Logic Level Devices
Fig 19.
Diode Reverse Recovery Test Circuit
for HEXFET
®
Power MOSFETs
DirectFET
Board Footprint, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and
substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
S
S
G
www.irf.com
© 2013 International Rectifier
September 6, 2013
8
IRF8301MTRPbF
DirectFET
Outline Dimension, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes
all recommendations for stencil and
substrate designs.
DIMENSIONS
IMPERIAL
METRIC
MAX
MIN
CODE MIN
MAX
0.250
0.199
0.156
0.018
0.032
0.036
0.072
0.040
0.026
0.039
0.104
0.0274
0.0031
0.007
6.35
5.05
3.95
0.45
0.82
0.246
0.189
0.152
0.014
0.031
A
B
C
D
E
F
6.25
4.80
3.85
0.35
0.78
0.88
1.78
0.98
0.63
0.88
2.46
0.616
0.020
0.08
0.92 0.035
1.82
1.02
0.67
1.01
2.63
0.676
0.080
0.17
0.070
0.039
0.025
0.035
0.097
0.0235
0.0008
0.003
G
H
J
K
L
M
R
P
DirectFET
Part Marking
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© 2013 International Rectifier
9
September 6, 2013
IRF8301MTRPbF
DirectFET
T
a
pe & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
8 3 0 1
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as I
F). F
IRF8301MTRPbF
DIMENSIONS
METRIC
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
G
H
1.60
0.063
Revision History
Date
Comments
Added the StrongIRFET logo on the top of the part number, on page 1.
09/05/2013
•
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
www.irf.com
© 2013 International Rectifier
September 6, 2013
10
