Infineon-Technologies-IRF8734TRPBF
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PD – 96226
IRF8734PbF
HEXFET
®
Power MOSFET
Applications
l
Synchronous MOSFET for Notebook
V
DSS
30V
R
DS(on)
max
Qg (typ.)
20nC
3.5m @V
GS
= 10V
Processor Power
l
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
A
A
D
1
8
S
Benefits
2
7
S
D
l
Very Low R
DS(on)
at 4.5V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
l
100% Tested for R
G
l
Lead-Free
3
6
S
D
4
5
G
D
SO-8
Top View
Absolute Maximum Ratings
Max.
Parameter
Units
V
DS
30
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
V
± 20
V
GS
21
I
I
I
@ T
A
= 25°C
D
D
17
A
@ T
A
= 70°C
168
DM
2.5
P
P
@T
A
= 25°C
@T
A
= 70°C
Power Dissipation
D
D
W
W/°C
°C
1.6
Power Dissipation
0.02
Linear Derating Factor
-55 to
+ 150
Operating Junction and
Storage Temperature Range
T
T
J
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
R
θ
JL
R
θ
JA
°C/W
–––
50
Notes
through
ꢀ
are on page 10
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
1
2/12/09
IRF8734PbF
Static @ T
J
= 25°C (unless otherwise specified)
Conditions
V
GS
= 0V, I
D
= 250µA
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max.
Units
30 –––
–––
BV
DSS
V
Reference to 25°C, I
D
= 1mA
∆Β
V
DSS
/
∆
T
J
R
DS(on)
Breakdown Voltage Temp. Coefficient
––– 0.023 –––
V/°C
V
GS
= 10V, I
D
= 21A
–––
–––
2.9
4.2
3.5
5.1
Static Drain-to-Source On-Resistance
m
Ω
V
GS
= 4.5V, I
D
= 17A
V
GS(th)
∆
V
GS(th)
I
DSS
Gate Threshold Voltage
1.35 1.80 2.35
V
V
DS
= V
GS
, I
D
= 50µA
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
85
-6.5
–––
–––
–––
–––
–––
20
––– mV/°C
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
1.0
µA
150
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
V
GS
= -20V
-100
V
DS
= 15V, I
D
= 17A
DS
= 15V
gfs
–––
30
S
Q
g
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
5.2
2.3
6.9
5.4
9.2
15
–––
–––
–––
–––
–––
–––
3.1
V
GS
= 4.5V
nC
I
D
= 17A
See Figs. 16a &16b
V
DS
= 16V, V
GS
= 0V
nC
Gate Resistance
1.7
13
Ω
V
DD
= 15V, V
GS
= 4.5V
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
–––
–––
–––
–––
I
D
= 17A
Rise Time
16
ns
pF
Ω
R
G
= 1.8
Turn-Off Delay Time
15
See Figs. 15a &15b
Fall Time
8.0
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
––– 3175 –––
V
DS
= 15V
Output Capacitance
–––
–––
627
241
–––
–––
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Typ.
–––
–––
Max.
Parameter
Units
mJ
E
AS
I
AR
216
17
Single Pulse Avalanche Energy
Avalanche Current
A
Diode Characteristics
Conditions
Parameter
Min. Typ. Max.
Units
I
S
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
–––
–––
3.1
A
I
SM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
168
V
SD
t
rr
T =
25°C, I
= 17A, V
= 0V
J S GS
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
20
1.0
30
38
V
T =
25°C, I
= 17A, V
DD
= 15V
ns
nC
J
F
Q
rr
di/dt = 345A/µs
25
2
IRF8734PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
BOTTOM
BOTTOM
1
0.1
1
2.3V
2.3V
60µs PULSE WIDTH
0.01
0.001
60µs PULSE WIDTH
Tj = 150°C
≤
≤
Tj = 25°C
10
, Drain-to-Source Voltage (V)
0.1
0.1
1
10
100
0.1
1
100
V
, Drain-to-Source Voltage (V)
V
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1.8
1000
I
= 21A
D
V
= 10V
GS
1.6
1.4
1.2
1.0
0.8
0.6
100
10
1
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
≤
60µs PULSE WIDTH
0.1
-60 -40 -20
0
20 40 60 80
100 12
0
1
40 160
1.5
2
2.5
3
3.5
4
4.5
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRF8734PbF
100000
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I =
17A
C
C
C
+ C
, C
SHORTED
ds
D
iss
gs
gd
= C
rss
oss
gd
V
= 24V
= 15V
DS
= C
+ C
ds
gd
V
DS
10000
1000
100
C
iss
6.0
C
oss
4.0
C
rss
2.0
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
5
10 15 20 25 30 35 40 45 50 55
V
Q ,
Total Gate Charge (nC)
G
DS
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
100µsec
T
= 150°C
J
1msec
T
= 25°C
J
1
T
= 25°C
A
10msec
Tj = 150°C
V
= 0V
GS
Single Pulse
0.1
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRF8734PbF
25
20
15
10
5
2.5
2.0
1.5
1.0
0.5
I
= 50µA
D
0
25
50
75
100
125
150
-75 -50 -25
0
25 50 75
100 125 150
T
, Ambient Temperature (°C)
T ,
Temperature ( °C )
A
J
Fig 10.
Threshold Voltage Vs. Temperature
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
100
D = 0.50
10
1
0.20
0.10
0.05
0.02
Ri (°C/W)
τ
i (sec)
R
1
R
1
R
2
R
2
R
3
R
3
R
4
R
4
0.01
9.66830
0.169346
11.46293
1.815389
0.005835
τ
τ
a
J
τ
J
τ
τ
16.3087
0.1
1
τ
1
Ci=
τ
i
/
Ri
τ
τ
τ
2
τ
2
3
τ
3
4
τ
4
20.7805
3.14828
0.01
0.001
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRF8734PbF
20
15
10
5
1000
900
800
700
600
500
400
300
200
100
0
I
= 21A
I
D
D
TOP
1.26A
2.03A
BOTTOM 17A
T =
125°C
J
T
= 25°C
J
0
2
4
6
8
10
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
V
Gate -to -Source Voltage
(V)
J
GS,
Fig 12.
On-Resistance Vs. Gate Voltage
Fig 13c.
Maximum Avalanche Energy
Vs. Drain Current
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
V
GS
Ω
0.01
t
p
I
AS
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
R
D
V
DS
V
DS
90%
V
GS
D.U.T.
R
G
+
V
DD
–
10%
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
6
IRF8734PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 16b.
Gate Charge Waveform
Fig 16a.
Gate Charge Test Circuit
Driver Gate Drive
P
.
W.
Period
D =
D.U.T
Period
P.W.
+
V
***
=10V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
*
V
DD
**
Re-Applied
Voltage
•
dv/dt controlled by R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
Use P-Channel Driver for P-Channel Measurements
**
Reverse Polarity for P-Channel
***
V
GS
= 5V for Logic Level Devices
Fig 17.
Diode Reverse Recovery Test Circuit
for HEXFET
®
Power MOSFETs
7
IRF8734PbF
SO-8 Package Outline
(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
8
IRF8734PbF
SO-8 Tape and Reel
(Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
9
IRF8734PbF
Orderable part number
Package Type
Standard Pack
Note
Form
Tube/Bulk
Quantity
95
IRF8734PbF
IRF8734TRPbF
SO-8
SO-8
Tape and Reel
4000
Qualification Information
†
Consumer
††
Qualification level
(per JEDEC JESD47F
†††
guidelines)
MSL
1
Moisture Sensitivity Level
RoHS Compliant
SO-8
(per JEDEC J-STD-020D
†††
)
Yes
†
Qualification standards can be found at International Rectifier’s web site
††
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
†††
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 1.69mH
R
G
= 25
Ω
, I
AS
= 16A.
Pulse width
≤
400µs; duty cycle
≤
2%.
When mounted on 1 inch square copper board
ꢀ
R
is measured at
T
J
of approximately 90°C.
θ
Data and specifications subject to change without notice
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
10
