Infineon-Technologies-IRF8736TRPBF
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PD – 97120
IRF8736PbF
HEXFET
®
Power MOSFET
Applications
l
Synchronous MOSFET for Notebook
Processor Power
V
DSS
30V
R
DS(on)
max
Qg Typ.
17nC
4.8m @V
GS
= 10V
l
Synchronous Rectifier MOSFET for
Isolated DC-DC
Converters in
Networking Systems
A
A
D
1
8
S
2
7
Benefits
S
D
3
6
l
Very Low R
DS(on)
at 4.5V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
S
D
4
5
G
D
SO-8
Top View
l
100% Tested for R
G
l
Lead -Free
Absolute Maximum Ratings
Parameter
Max.
30
Units
V
V
DS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
V
± 20
18
GS
I
I
I
@ T
A
= 25°C
D
D
@ T
A
= 70°C
14.4
144
2.5
A
DM
Power Dissipation
P
P
@T
A
= 25°C
@T
A
= 70°C
W
D
D
Power Dissipation
1.6
Linear Derating Factor
Operating Junction and
0.02
-55 to
+ 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
°C/W
R
θ
JL
R
θ
JA
–––
50
Notes
through
ꢀ
are on page 9
1
08/1/07
IRF8736PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max.
Units
30 –––
–––
Conditions
V
GS
= 0V, I
D
= 250µA
BV
DSS
∆Β
V
∆
V
DSS
/ T
J
Breakdown Voltage Temp. Coefficient
––– 0.022 –––
V/°C Reference
to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
–––
1.35
–––
–––
–––
–––
–––
52
3.9
5.5
1.8
-6.1
–––
–––
–––
–––
–––
17
4.8
6.8
V
GS
= 10V, I
D
= 18A
V
GS
= 4.5V, I
D
= 14.4A
V
DS
= V
GS
, I
D
= 50µA
m
Ω
V
GS(th)
Gate Threshold Voltage
2.35
V
∆
V
GS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
I
DSS
1.0
150
100
-100
–––
26
µA V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
GS
= 20V
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
S
V
V
GS
= -20V
gfs
Q
g
V
DS
= 15V, I
D
= 14.4A
–––
–––
–––
–––
–––
–––
–––
Q
gs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
4.4
1.9
5.8
4.9
7.7
7.1
–––
–––
–––
–––
–––
–––
V
DS
= 15V
Q
gs2
Q
gd
nC V
GS
= 4.5V
I
D
= 14.4A
Q
godr
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
See Fig. 16
Q
sw
Q
oss
Output Charge
nC V
DS
= 10V, V
GS
= 0V
R
G
t
d(on)
t
r
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
1.3
12
2.2
–––
–––
–––
–––
Ω
V
DD
= 15V, V
GS
= 4.5V
I
D
= 14.4A
R =
1.8
15
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
13
ns
pF
Ω
G
7.5
See Fig. 14
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 2315 –––
–––
–––
449
219
–––
–––
V
DS
= 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
126
Units
mJ
Single Pulse Avalanche Energy
E
AS
I
AR
Avalanche Current
14.4
A
Diode Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
I
S
Continuous Source Current
–––
–––
3.1
MOSFET symbol
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
I
SM
–––
–––
144
(Body Diode)
Diode Forward Voltage
p-n junction diode.
V
SD
t
rr
–––
–––
–––
–––
16
1.0
24
29
V
T =
25°C, I
= 14.4A, V
= 0V
J S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T
= 25°C, I
= 14.4A, V
DD
= 10V
J F
Q
rr
t
on
di/dt = 300A/µs
19
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
IRF8736PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
BOTTOM
BOTTOM
1
0.1
1
2.3V
0.01
0.001
2.3V
1
60µs PULSE WIDTH
≤
60µs PULSE WIDTH
Tj = 25°C
≤
Tj = 150°C
0.1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
100
10
2.0
I
= 18A
D
V
= 10V
GS
1.5
1.0
0.5
T
= 150°C
J
1
0.1
T
= 25°C
J
V
= 15V
DS
≤
60µs PULSE WIDTH
0.01
1.0
2.0
3.0
4.0
5.0
-60 -40 -20
T
0
20 40 60 80
100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRF8736PbF
10000
5
4
3
2
1
0
V
C
= 0V,
f = 1 MHZ
GS
I =
14.4A
D
= C
+ C
, C
SHORTED
iss
gs
gd ds
V
V
= 24V
= 15V
C
= C
DS
DS
rss
gd
C
= C
+ C
oss
ds
gd
Ciss
1000
Coss
Crss
100
0
4
8
12
16
20
1
10
100
Q , Total
Gate Charge (nC)
g
V
, Drain-to-Source Voltage (V)
DS
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
100µsec
1msec
T
= 150°C
J
10msec
T
= 25°C
J
1
T
= 25°C
A
Tj = 150°C
Single Pulse
V
GS
= 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
V
, Drain-to-Source
Voltage (V)
V
, Source-to-Drain
Voltage (V)
DS
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRF8736PbF
20
16
12
8
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
I
= 50µA
D
4
0
25
50
75
100
125
150
-75 -50 -25
0
25
50
75 100
125 150
T , Ambient
Temperature (°C)
T ,
Temperature ( °C )
A
J
Fig 10.
Threshold Voltage Vs. Temperature
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
100
D = 0.50
10
1
0.20
0.10
0.05
R
1
R
1
R
2
R
2
R
3
R
3
R
4
R
4
τι
(sec)
1.396574 0.000246
Ri (°C/W)
0.02
0.01
τ
J
τ
a
τ
J
τ
1
7.206851 0.037927
τ
τ
3
τ
3
τ
4
2
τ
2
τ
1
τ
4
27.1278
14.26877
1.0882
30.3
Ci=
τ
i
/
Ri
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular
Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRF8736PbF
600
500
400
300
200
100
0
15V
I
D
TOP
1.28A
1.75A
14.4A
DRIVER
+
L
V
BOTTOM
DS
D.U.T
R
G
V
DD
–
I
A
AS
20V
Ω
t
0.01
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
J
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
R
D
I
AS
V
DS
Fig 12b.
Unclamped Inductive Waveforms
V
GS
D.U.T.
R
G
+
V
DD
–
Current Regulator
Same Type as D.U.
T
.
V
GS
Puls
e
W
idth
≤ 1
µs
Duty Factor
≤ 0.1 %
50K
Ω
.2
µ
F
12V
.3
µ
F
Fig 14a.
Switching Time Test Circuit
+
V
DS
V
DS
D.U.
T
.
–
90%
V
GS
3mA
10%
I
I
D
G
V
GS
Current Sampling Resistors
t
t
r
t
t
f
d(on)
d(off)
Fig 13.
Gate Charge Test Circuit
Fig 14b.
Switching Time Waveforms
6
IRF8736PbF
Driver Gate Drive
P.W.
P
.
W.
D =
D.U.T
Period
Period
+
–
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/dt controlled by R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 15.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgodr
Qgd
Fig 16.
Gate Charge Waveform
7
IRF8736PbF
SO-8 Package
Outline
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
8
IRF8736PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 1.21mH, R
G
= 25
Ω
, I
AS
= 14.4A.
Pulse width
≤
400µs; duty cycle
≤
2%.
When mounted on 1 inch square copper board
ꢀ
R
θ
is measured at T
J
approximately 90°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
9
