Infineon-Technologies-IRF9383MTRPBF
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IRF9383MPbF
Typical values (unless otherwise specified)
Applications
V
DSS
-30V max
±20V max
V
GS
R
DS(on)
R
DS(on)
l
Isolation Switch for Input Power or Battery Application
l
High Side Switch for Inverter Applications
2.3m
Ω
@-10V 3.8m
Ω
@-4.5V
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
Features and Benefits
67nC
29nC
9.4nC 315nC 59nC
-1.8V
l
Environmentaly Friendly Product
l
RoHs Compliant Containing no Lead,
no Bromide and no
Halogen
S
G
D
l
Common-Drain P-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
D
S
DirectFET
ISOMETRIC
MX
SQ
SX
ST
MQ
MX
MT
MP
MC
Description
The IRF9383MTRPbF combines the latest HEXFET
®
P-Channel Power MOSFET Silicon technology with the advanced DirectFET
®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.
The DirectFET
®
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
®
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
Standard Pack
Orderable part number
Package Type
Note
Form
Quantity
4800
DirectFET
®
Medium Can
DirectFET
®
Medium Can
I
R
F9383MTRPbF
IRF9383MTR1PbF
Tape and Reel
Tape and Reel
1000
“TR1” suffix EOL notice #264
Absolute Maximum Ratings
Max.
Parameter
Units
V
DS
-30
±20
-22
Drain-to-Source Voltage
V
V
Gate-to-Source Voltage
GS
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
I
I
I
@ T
A
= 25°C
D
D
D
-17
@ T
A
= 70°C
@ T
C
= 25°C
A
-160
-180
DM
12
10
8
14.0
12.0
10.0
8.0
I =
-18A
D
I
= -22A
D
V
V
V
= -24V
= -15V
= -6.0V
DS
DS
DS
6
6.0
T =
125°C
J
4
4.0
2
2.0
T
= 25°C
J
0
0.0
2
4
6
8
10 12 14 16 18 20
0
20 40 60 80
100 120 140 160 180
Total Gate Charge (nC)
Q
G
-V
Gate -to -Source Voltage
(V)
GS,
Fig 2.
Typical Total
Gate Charge vs Gate-to-Source Voltage
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
T
C
measured with thermocouple mounted to top (Drain) of part.
ꢀ
Repetitive rating;
pulse width limited by max. junction temperature.
Surface mounted on 1 in. square Cu board, steady state.
June 2, 2015
1
IRF9383MPbF
Static @ T
J
= 25°C (unless otherwise specified)
Conditions
Parameter
Min. Typ. Max.
Units
V
GS
= 0V, I
D
= -250
μ
A
BV
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
-30
–––
–––
V
Reference to 25°C, I
D
= -1.0mA
ΔΒ
V
DSS
/
Δ
T
J
R
DS(on)
––– 0.0159 –––
V/°C
V
V
GS
= -10V, I
D
= -22A
GS
= -4.5V, I
D
= -18A
–––
–––
-1.3
–––
–––
–––
–––
–––
56
2.3
3.8
2.9
4.8
m
Ω
V
GS(th)
Gate Threshold Voltage
-1.8
-5.9
–––
–––
–––
–––
–––
130
67
-2.4
V
V
DS
= V
GS
, I
D
= -150
μ
A
V
/ T
GS(th)
Δ
Δ
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
J
V
DS
= -24V, V
GS
= 0V
I
DSS
-1.0
μ
A
V
V
V
V
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
GS
= -20V
-150
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
-100
nA
GS
= 20V
100
DS
= -10V, I
D
= -18A
DS
= -15V, V
GS
= -10V, I
D
= -18A
gfs
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
Q
g
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Q
g
Total Gate Charge
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
V
DS
= -15V
Pre- Vth Gate-to-Source Charge
Post -Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch charge (Q
gs2
+ Q
gd
)
Output Charge
12
nC V
GS
= -4.5V
I
D
= -18A
9.4
29
16.6
38.4
59
See Fig.15
V
DS
= -24V, V
GS
= 0V
nC
Gate Resistance
6.5
Ω
V
DD
= -15V, V
GS
= -4.5V
I
D
= -18A
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
29
Rise Time
160
115
110
ns
R
G
= 1.8
Ω
See Fig.17
Turn-Off Delay Time
Fall Time
V
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
––– 7305 –––
––– 1780 –––
––– 1030 –––
DS
= -15V
pF
Output Capacitance
ƒ = 1.0KHz
Reverse Transfer Capacitance
Diode Characteristics
Conditions
Parameter
Min. Typ. Max.
Units
D
S
I
S
MOSFET symbol
Continuous Source Current
–––
–––
-114
showing the
(Body Diode)
A
G
I
SM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
-180
T
J
= 25°C, I
S
= -18A, V
GS
= 0V
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
52
-1.2
78
V
T
J
= 25°C, I
F
= -18A, ,V
DD
= -15V
ns
nC
Q
rr
di/dt = 500A/
μ
s
315
470
Notes:
Pulse width
≤
400
μ
s; duty cycle
≤
2%.
June 2, 2015
2
IRF9383MPbF
Absolute Maximum Ratings
Max.
2.1
Parameter
Units
P
P
P
@T
A
= 25°C
@T
A
= 70°C
@T
C
= 25°C
Power Dissipation
Power Dissipation
Power Dissipation
D
D
D
P
J
1.3
W
113
270
Peak Soldering Temperature
Operating Junction and
T
T
T
-40 to
+ 150
°C
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
60
Units
°C/W
W/°C
R
θ
JA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
R
θ
JA
–––
–––
1.1
R
θ
JA
R
θ
JC
Junction-to-Case
,
–––
1.0
R
θ
J-PCB
Junction-to-PCB Mounted
Linear Derating Factor
–––
0.02
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
R
1
R
1
R
2
R
2
R
3
R
3
R
4
R
4
Ri (°C/W)
τ
i (sec)
τ
0.1
τ
J
τ
J
τ
2.7194
0.0138004
A
τ
A
τ
1
τ
1
τ
τ
23.1599 55.766563
10.2579 0.6520047
23.6469 7.7259631
2
τ
2
3
τ
3
4
τ
4
0.01
0.001
0.0001
Ci=
τ
i
/
Ri
Ci=
τ
i
/
Ri
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
is measured at
T
J
of approximately 90°C.
θ
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Surface mounted on 1 in. square Cu
Mounted to a PCB
with small
clip heatsink (still air)
board (still
air).
3
June 2, 2015
IRF9383MPbF
1000
100
10
1000
100
10
VGS
-10V
VGS
-10V
TOP
TOP
-5.0V
-4.5V
-3.5V
-3.25V
-3.0V
-2.75V
-2.5V
-5.0V
-4.5V
-3.5V
-3.25V
-3.0V
-2.75V
-2.5V
BOTTOM
BOTTOM
1
-2.5V
0.1
0.01
-2.5V
60
μ
s PULSE WIDTH
Tj = 25°C
≤
60
μ
s PULSE WIDTH
Tj = 150°C
≤
1
0.1
1
10
100
0.1
1
10
100
-V ,
Drain-to-Source Voltage (V)
-V ,
Drain-to-Source Voltage (V)
DS
DS
Fig 4.
Typical Output Characteristics
Fig 5.
Typical Output Characteristics
1000
100
10
1.6
1.4
1.2
1.0
0.8
0.6
V
= -15V
I
= -22A
DS
D
≤
60
μ
s PULSE WIDTH
V
= -10V
= -4.5V
GS
GS
V
T =
150°C
J
T =
25°C
J
T =
-40°C
J
1.0
1
2
3
4
5
-60 -40 -20
0
20 40 60 80
100 12
0
1
40 160
T
J
, Junction Temperature (°C)
-V ,
Gate-to-Source Voltage (V)
GS
Fig 7.
Normalized On-Resistance vs. Temperature
Fig 6.
Typical Transfer Characteristics
100000
10000
1000
12
V
= 0V,
= C
f = 1 MHZ
GS
T
= 25°C
J
C
C
C
+ C
, C
SHORTED
ds
iss
gs
gd
= C
Vgs = -3.5V
Vgs = -4.5V
Vgs = -5.0V
Vgs = -6.0V
Vgs = -8.0V
Vgs = -10V
Vgs = -12V
Vgs = -15V
rss
oss
gd
10
8
= C
+ C
ds
gd
C
iss
C
oss
6
C
rss
4
100
2
0
20 40 60 80
100 120 140 160 180
1
10
-V ,
Drain-to-Source Voltage (V)
100
DS
-I ,
Drain Current (A)
D
Fig 9.
Typical On-Resistance vs.
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Drain Current and Gate Voltage
June 2, 2015
4
IRF9383MPbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
μ
sec
1msec
T =
150°C
J
T
= 25°C
J
T =
-40°C
J
10msec
1
DC
1
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0
0.01
0.1
1
10
100
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
-V ,
Drain-to-Source Voltage (V)
DS
-V ,
Source-to-Drain Voltage (V)
SD
Fig 10.
Typical Source-Drain Diode Forward Voltage
Fig 11.
Maximum Safe Operating
Area
25
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
20
15
10
5
I
I
I
I
= -150
μ
A
= -250
μ
A
= -1.0mA
= -1.0A
D
D
D
D
0
-75 -50 -25
0
25 50 75
100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
J
, Case Temperature (°C)
C
Fig 13.
Typical Threshold Voltage vs. Junction
Fig 12.
Maximum Drain Current vs. Case Temperature
Temperature
2500
I
D
TOP
-1.6A
-2.3A
2000
1500
1000
500
0
BOTTOM -18A
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
J
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
June 2, 2015
IRF9383MPbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 17a.
Gate Charge Test Circuit
Fig 17b.
Gate Charge Waveform
L
V
DS
I
AS
D.U.T
R
G
V
DD
I
A
AS
-V
GS
DRIVER
0.01
Ω
t
p
t
p
V
(BR)DSS
15V
Fig 18b.
Unclamped Inductive Waveforms
Fig 18a.
Unclamped Inductive Test Circuit
R
D
V
DS
t
t
r
t
t
f
d(on)
d(off)
V
GS
V
GS
D.U.T.
10%
R
G
–
V
DD
+
-V
GS
90%
Puls
e
W
idth
≤ 1
µs
Duty Factor
≤ 0.1 %
V
DS
Fig 19a.
Switching Time Test Circuit
Fig 19b.
Switching Time Waveforms
June 2, 2015
6
IRF9383MPbF
Driver Gate Drive
P.W.
P
.
W.
D =
Period
D.U.T
*
Period
+
*
=10V
V
GS
Circui
t
L
ayou
t
C
onsiderations
•
Lo
w
S
tra
y
I
nductance
•
Ground Plane
•
Lo
w
L
eakag
e
I
nductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
•
di/dt controlled by R
G
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Re-Applied
Voltage
R
G
+
–
Body Diode
Inducto
r
C
urrent
Forward Drop
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
*
Reverse Polarity of D.U.T for P-Channel
Fig 20.
Diode Reverse Recovery Test Circui
t
for P-Channel HEXFET
®
Power MOSFETs
DirectFET
®
Board Footprint, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET
®
application note AN-1035 for all details regarding the assembly of DirectFET
®
.
This includes all recommendations for stencil and
substrate designs.
G=GATE
D=DRAIN
S=SOURCE
D
D
D
D
S
S
G
7
June 2, 2015
IRF9383MPbF
DirectFET
®
Outline Dimension, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET
®
application note AN-1035 for all details regarding the assembly of DirectFET
®
. This includes
all recommendations for stencil and
substrate designs.
DIMENSIONS
METRIC
IMPERIAL
CODE MIN
MAX
MIN
MAX
0.250
0.199
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.040
0.095
0.028
0.003
0.007
A
B
C
D
E
F
6.25
4.80
3.85
0.35
0.68
0.68
1.38
0.80
0.38
0.88
2.28
0.59
0.03
0.08
6.35
5.05
3.95
0.45
0.72
0.72
1.42
0.84
0.42
1.02
2.42
0.70
0.08
0.17
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.031
0.015
0.035
0.090
0.023
0.001
0.003
G
H
J
K
L
M
R
P
Dimensions are shown in
millimeters (inches)
DirectFET
®
Part Marking
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates “Lead-Free”
June 2, 2015
8
IRF9383MPbF
DirectFET
®
T
a
pe & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF9383MTRPBF). For 1000 parts on 7″
reel, order
IRF9383MTR1PBF
REEL DIMENSIONS
STANDARD OPTION (QT
Y
4
800)
METR
I
C
I
M
PER
I
A
L
CODE
MIN
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
A
B
C
D
E
F
330
20.2
12.8
1.5
100.0
N.C
12.992
0.795
0.504
0.059
3.937
N.C
G
H
12.4
11.9
0.488
0.469
LOADED TAPE FEED DIRECTION
DIMENSIONS
METRIC
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
MIN
CODE
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
G
H
0.063
1.60
9
June 2, 2015
IRF9383MPbF
Qualification Information
†
Consumer
††
Qualification level
(per JEDEC JESD47F
†††
guidelines)
MSL1
(per JEDEC J-STD-020D
†††
DirectFET
®
Moisture Sensitivity Level
RoHS Compliant
)
Yes
Qualification standards can be found at International Rectifier’s web site
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option
(EOL notice #264).
Updated data sheet with new IR corporate template.
Change MSL3 to MSL1, on page 9.
Updated schematics
from “N-Channel” to “P-Channel” on page 1.
Updated “IFX logo” on page 1 and page 10..
•
•
•
•
•
2/17/2014
2/25/2014
6/2/2015
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
June 2, 2015
10
