Infineon-Technologies-IRF9389TRPBF
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IRF9389PbF
HEXFET
®
Power MOSFET
N-CH P-CH
N-CHANNEL MOSFET
1
8
D1
D1
S1
G1
V
DS
30
27
-30
64
V
2
7
R
DS(on) max
Q
g (typical)
m
nC
3
4
6
5
S2
D2
D2
6.8
8.1
G2
P-CHANNEL MOSFET
I
D
Top View
SO-8
6.8
-4.6
A
(@T
A
= 25°C)
Applications
l
Hig
h
a
n
d
L
o
w
S
id
e
S
witche
s
f
o
r
I
nverter
l
High and Low Side Switches for Generic Half-Bridge
Features
B
e
nefits
High and low-side MOSFETs in a single package
High-side P-Channel MOSFET
Increased power density
Easier dri
v
e
c
ircuitry
Industry-standard pinout
results in Multi-
v
endor compatibility
Compatible with existing surface mount techniques
RoHS compliant containing no Lead, no Bromide and no Halogen
MSL1, Consumer qualification
Easier manufacturing
En
v
i
ronmentally friendlier
Increased reliability
B
a
s
e
P
art Number
Package Type
Standard Pack
Orderable part number
Form
Tube/Bulk
Quantity
95
IRF9389PbF
IRF9389TRPbF
IRF9389PbF
SO-8
Tape and Reel
4000
Absolute Maximum Ratings
Max.
Parameter
Units
N-Channel
P-Channel
±20
V
V
GS
Gate-to-Source Voltage
±20
6.8
5.4
34
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
-4.6
A
-3.7
-23
2.0
1.3
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Power Dissipation
W
W/°C
°C
Power Dissipation
Linear Derating Factor
Operating Junction and
0.016
-55 to
+ 150
T
J
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max
20
62.5
Units
R
R
JL
JA
°C/W
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© 2012 International Rectifier
January 14, 2013
1
IRF9389PbF
Static @ T
J
= 25°C (unless otherwise specified)
Conditions
Parameter
Min.
Typ.
–––
–––
0.03
0.02
22
Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage
N-Ch
P-Ch
30
–––
–––
–––
–––
27
V
V
GS
= 0V, I
D
= 250
μ
A
GS
= 0V, I
D
= -250
μ
A
-30
–––
–––
–––
–––
–––
–––
1.3
V
V
D
S
S
/
T
J
Breakdown Voltage Temp. Coefficient
N-Ch
V/°C Reference
to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
P-Ch
N-Ch
m
V
GS
= 10V, I
D
= 6.8A
R
D
S
(
on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
33
40
V
GS
= 4.5V, I
D
= 5.4A
m
P-Ch
51
64
V
GS
= -10V, I
D
= -4.6A
GS
= -4.5V, I
D
= -3.7A
82
103
2.3
V
V
G
S
(
th)
N-Ch
1.8
V
V
DS
= V
G
S
, I
D
= 10
μ
A
V
DS
= V
G
S
, I
D
= -10
μ
A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
-1.3
–––
–––
–––
–––
–––
–––
–––
–––
8.2
-1.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.8
8.1
1.4
1.3
0.98
2.1
2.2
9.4
5.1
8.0
4.8
14
-2.3
1.0
μ
A V
DS
= 24V, V
GS
= 0V
I
DSS
Drain-to-Source Leakage Current
-1.0
150
-150
100
-100
-100
100
–––
–––
14
V
V
V
DS
= -24V, V
GS
= 0V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
DS
= -24V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA V
GS
= 20V
V
GS
= -20V
V
GS
= -20V
V
GS
= 20V
V
DS
= 15V, I
D
= 5.4A
gfs
Q
g
S
4.1
V
DS
= -15V, I
D
= -3.7A
N-Channel
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
16
V
GS
= 10V, V
DS
= 15V, I
D
= 6.8A
Q
gs
Q
gd
R
G
t
d
(
on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Gate Resistance
–––
–––
–––
–––
4.4
P-Channel
V
GS
= -10V, V
DS
= -15V, I
D
= -4.6A
19
N-Channel
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ns
V
DD
= 15V, V
GS
= 4.5V
I
D
= 1.0A, R
G
= 6.2
P-Channel
t
d
(
off)
t
f
Turn-Off Delay Time
Fall Time
4.9
17
V
DD
= -15V, V
GS
= -4.5V
3.9
15
I
D
= -1.0A, R
G
= 6.8
N-Channel
C
iss
C
oss
C
r
s
s
Input Capacitance
398
383
82
pF
V
GS
= 0V, V
DS
= 15V, ƒ = 1.0MHz
Output Capacitance
P-Channel
104
36
Reverse Transfer Capacitance
V
GS
= 0V, V
DS
= -15V, ƒ = 1.0KHz
64
Diode Characteristics
Conditions
Parameter
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
8.4
Max. Units
I
S
Continuous Source Current (Body DiodeN-Ch
P-Ch
2.0
-2.0
34
A
I
SM
V
SD
t
rr
Pulsed Source Current (Body Diode)
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
-23
1.2
-1.2
13
Diode Forward Voltage
V
T =
25°C, I
= 2.0A, V
= 0V
J
S
GS
T =
25°C, I
= -2.0A, V
= 0V
J
S
GS
Reverse Recovery Time
ns N-Channel:
T =
25°C, I
= 2.0A,
J F
11
17
V
DD
= 15V, di/dt = 102/
μ
s
nC P-Channel:
T =
25°C, I
= -2.0A,
Q
rr
Reverse Recovery Charge
2.3
3.5
7.2
J
F
4.8
V
DD
= -15V, di/dt = 102/
μ
s
Notes:
Surface mounted on 1 in square Cu board
R
is measured at T
J
approximately 90°C
Repetitive rating;
pulse width limited by
max. junction temperature. (See fig. 16)
Pulse width
400
μ
s; duty cycle
2%.
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© 2012 International Rectifier
January 14, 2013
2
IRF9389PbF
N-Channel
100
10
1
100
10
1
VGS
7.5V
6.5V
5.5V
4.5V
4.0V
3.5V
3.0V
2.75V
VGS
TOP
TOP
7.5V
6.5V
5.5V
4.5V
4.0V
3.5V
3.0V
2.75V
BOTTOM
BOTTOM
2.75V
2.75V
60
μ
s PULSE WIDTH
60
μ
s PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
10
2.0
I
= 5.4A
D
V
= 4.5V
GS
1.5
1.0
0.5
T
= 150°C
J
T
= 25°C
J
1
V
= 15V
DS
60
μ
s PULSE WIDTH
0.1
1
2
3
4
5
6
-60 -40 -20
0
20 40 60 80
100 12
0
1
40 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs
.
T
emperature
3
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© 2012 International Rectifier
January 14, 2013
IRF9389PbF
N-Channel
10000
1000
100
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I =
6.8A
D
C
C
C
+ C
, C
SHORTED
iss
gs
gd
ds
V
V
V
= 24V
= 15V
= 6.0V
= C
DS
DS
DS
rss
oss
gd
= C
+ C
ds
gd
C
iss
6.0
C
oss
4.0
C
rss
2.0
10
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
1
2
3
4
5
6
7
8
9
V
DS
Q ,
Total Gate Charge (nC)
G
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs.
Drain-to-Sourc
e
V
oltage
Gate-to-Sourc
e
V
oltage
100
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
μ
sec
1msec
T
= 150°C
J
10
1
1
10msec
T =
25°C
J
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
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© 2012 International Rectifier
January 14, 2013
4
IRF9389PbF
N-Channel
R
D
V
DS
7
6
5
4
3
2
1
0
V
GS
D.U.T.
R
G
+
–
V
DD
V
GS
Pulse Width
µs
Duty Factor
Fig 10a.
Switching Time Test Circuit
V
DS
25
50
75
100
125
150
90%
T
, Ambient Temperature (°C)
A
10%
V
GS
Fig 9.
Maximum Drain Current vs.
t
t
r
t
t
f
d(on)
d(off)
Ambien
t
T
emperature
Fig 10b.
Switching Time Waveforms
100
120
110
100
90
I
= 6.8A
D
80
60
40
20
80
70
60
Vgs = 4.5V
Vgs = 10V
50
40
30
20
2
4
6
8
10 12 14 16 18 20
0
5
10 15 20 25 30 35 40 45
I ,
Drain Current (A)
D
V
Gate -to -Source Voltage
(V)
GS,
Fig 11.
Typical On-Resistance vs. Gate
Fig 12.
Typical On-Resistance vs. Drain
Voltage
Current
5
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© 2012 International Rectifier
January 14, 2013
IRF9389PbF
N-Channel
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20000
16000
12000
8000
4000
0
I
= 10
μ
A
D
-75 -50 -25
0
25 50 75
100 125 150
1E-8 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2
T ,
Temperature ( °C )
J
Time (sec)
Fig 14.
Typical Power vs. Time
Fig 13.
Threshold Voltage vs. Temperature
Current Regulator
Same Type as D.U.
T
.
50K
Q
Q
G
.2
F
12V
.3
F
V
GS
+
Q
V
DS
GS
GD
D.U.
T
.
–
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 15a.
Basic Gate Charge Waveform
Fig 15b.
Gate Charge Test Circuit
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© 2012 International Rectifier
January 14, 2013
6
IRF9389PbF
N and P-Channel
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 16.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
7
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© 2012 International Rectifier
January 14, 2013
IRF9389PbF
P-Channel
100
10
1
100
10
1
VGS
VGS
TOP
-8.0V
-7.0V
-6.0V
-5.0V
-4.5V
-3.5V
-3.0V
-2.75V
TOP
-8.0V
-7.0V
-6.0V
-5.0V
-4.5V
-3.5V
-3.0V
-2.75V
BOTTOM
BOTTOM
-2.75V
-2.75V
60
μ
s PULSE WIDTH
Tj = 150°C
60
μ
s PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V ,
Drain-to-Source Voltage (V)
DS
-V ,
Drain-to-Source Voltage (V)
DS
Fig 17.
Typical Output Characteristics
Fig 18.
Typical Output Characteristics
100
10
1.6
I
= -3.7A
D
V
= -4.5V
GS
1.4
1.2
1.0
0.8
0.6
T
= 150°C
J
T =
25°C
J
1
V
= -15V
DS
60
μ
s PULSE WIDTH
0.1
1
2
3
4
5
6
7
-60 -40 -20
0
20 40 60 80
100 12
0
1
40 160
T
J
, Junction Temperature (°C)
-V ,
Gate-to-Source Voltage (V)
GS
Fig 19.
Typical Transfer Characteristics
Fig 20.
Normalized On-Resistance
vs
.
T
emperature
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© 2012 International Rectifier
January 14, 2013
8
IRF9389PbF
P-Channel
14.0
12.0
10.0
8.0
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
I =
-4.6A
D
C
C
C
+ C
, C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
= C
+ C
V
= -24V
= -15V
= -6.0V
DS
ds
gd
V
V
DS
DS
C
iss
C
C
oss
6.0
rss
4.0
2.0
0.0
10
0
2
4
6
8
10
12
1
10
-V ,
Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
G
DS
Fig 22.
Typical Gate Charge vs.
Fig 21.
Typical Capacitance vs.
Gate-to-Sourc
e
V
oltage
Drain-to-Sourc
e
V
oltage
100.00
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
μ
sec
1msec
10msec
10.00
1.00
0.10
T
= 150°C
J
1
T =
25°C
J
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
-V ,
Source-to-Drain Voltage (V)
-V ,
Drain-to-Source Voltage (V)
SD
DS
Fig 23.
Typical Source-Drain Diode
Fig 24.
Maximum Safe Operating Area
Forward Voltage
9
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© 2012 International Rectifier
January 14, 2013
IRF9389PbF
P-Channel
R
D
V
DS
5.0
4.0
3.0
2.0
1.0
0.0
V
GS
D.U.T.
R
G
–
V
DD
+
V
GS
Pulse Width
µs
Duty Factor
Fig 26a.
Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
25
50
75
100
125
150
10%
T
, Ambient Temperature (°C)
A
90%
V
Fig 25.
Maximum Drain Current vs.
DS
Ambien
t
T
emperature
Fig 26b.
Switching Time Waveforms
600
500
200
I
= -4.6A
D
160
120
80
Vgs = -4.5V
400
300
200
Vgs = -10V
100
0
40
2
4
6
8
10 12 14 16 18 20
0
5
10
15
20
25
30
-I ,
Drain Current (A)
D
-V
Gate -to -Source Voltage
(V)
GS,
Fig 28.
Typical On-Resistance vs. Drain
Current
Fig 27.
Typical On-Resistance vs. Gate
Voltage
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© 2012 International Rectifier
January 14, 2013
10
IRF9389PbF
P-Channel
20000
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
16000
12000
8000
4000
0
I
= -10
μ
A
D
1E-8 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2
-75 -50 -25
0
25 50 75
100 125 150
Time (sec)
T
, Temperature ( °C )
J
Fig 29.
Threshold Voltage vs. Temperature
Fig 30
.
Typical Power vs. Time
Current Regulator
Same Type as D.U.
T
.
50K
.2
F
12V
Q
G
.3
F
–
V
+
DS
D.U.
T
.
Q
Q
GD
GS
V
GS
V
G
-3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 31a.
Basic Gate Charge Waveform
Fig 31b.
Gate Charge Test Circuit
11
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© 2012 International Rectifier
January 14, 2013
IRF9389PbF
SO-8 Package Details
SO-8 Part Marking
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© 2012 International Rectifier
January 14, 2013
12
IRF9389PbF
Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13
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© 2012 International Rectifier
January 14, 2013
IRF9389PbF
Qualification information
†
Cons umer
Qualification le
v
el
(per
J
E D
E
C
J
E
S
D
47F
††
g
u
i
d
e
l
i
n
e
s
)
MS
L
1
Moisture Sensiti
v
i
ty Le
v
e
l
RoHS compliant
SO-8
(
p
er JE D
E
C
J
-S
T
D
-020D
††
Yes
)
Qualification standards can be found at International Rectifiers web site:
Applicable
version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS:
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© 2012 International Rectifier
January 14, 2013
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