Infineon-Technologies-IRF9395MTRPBF
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IRF9395MPbF
Typical values (unless otherwise specified)
V
DSS
V
GS
R
DS(on)
R
DS(on)
-30V max
±20V max
Ω
Ω
5.3m @-10V
9.0m @-4.5V
Applications
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
32nC
15nC
3.2nC
62nC
23nC
-1.8V
Features and Benefits
Q1-Q2
G
G
l
RoHs Compliant Containing no Lead,
no Bromide and no
Halogen
S
S
S
S
D
D
l
Dual Common-Drain P-Channel MOSFE
T
s
P
rovides
High Level of Integration and Very Low RDS(on)
DirectFET
ISOMETRIC
MC
MP
MC
SQ
SX
ST
MQ
MX
MT
Description
The IRF9395MTRPbF combines the latest HEXFET®
P-Channel Power MOSFET Silicon technology with the advanced
DirectFET
TM
packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm
profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment
and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, improving previous best thermal resistance by 80%.
Standard Pack
Orderable part number
Package Type
Note
Form
Tape and Reel
Quantity
4800
I
R
F9395MTRPbF
IRF9395MTR1PbF
DirectFET Medium Can
DirectFET Medium Can
“TR” suffix
“
T
R1″ suffix EOL notice # 264
Tape and Reel
1000
Absolute Maximum Ratings
Max.
-30
Parameter
Units
V
DS
Drain-to-Source Voltage
V
±20
-14
V
Gate-to-Source Voltage
GS
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
I
I
I
@ T
A
= 25°C
D
D
D
-11
@ T
A
= 70°C
@ T
C
= 25°C
A
-75
-110
DM
24
20
16
12
8
14.0
12.0
10.0
8.0
I =
-11A
I
= -14A
D
D
V
V
= -24V
DS
DS
= -15V
VDS= -6V
T
= 125°C
= 25°C
6.0
J
4.0
4
2.0
T
J
0
0.0
2
4
6
8
10 12 14 16 18 20
0
20
Q
40
60
80
Total Gate Charge (nC)
-V
Gate -to -Source Voltage
(V)
G
GS,
Fig 2.
Typical Total
Gate Charge vs Gate-to-Source Voltage
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
ꢀ
Repetitive rating;
pulse width limited by max. junction temperature.
1
February 24, 2014
IRF9395MPbF
Static @ T
J
= 25°C (unless otherwise specified)
Conditions
Parameter
Min. Typ. Max.
Units
V
GS
= 0V, I
D
= -250
μ
A
BV
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
-30
–––
–––
V
Reference to 25°C, I
D
= -1.0mA
ΔΒ
V
DSS
/
Δ
T
J
R
DS(on)
––– 0.012 –––
V/°C
V
V
GS
= -10V, I
D
= -14A
GS
= -4.5V, I
D
= -11 A
–––
–––
-1.3
–––
–––
–––
–––
–––
40
5.3
9.0
-1.8
-6.1
–––
–––
–––
–––
–––
64
7.0
11.9
-2.4
m
Ω
V
GS(th)
Gate Threshold Voltage
V
V
DS
= V
GS
, I
D
= -50
μ
A
V
/ T
GS(th)
Δ
Δ
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
J
V
DS
= -24V, V
GS
= 0V
I
DSS
-1.0
μ
A
V
V
V
V
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
GS
= -20V
-150
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
-100
nA
GS
= 20V
100
DS
= -15V, I
D
= -11A
DS
= -15V, V
GS
= -10V, I
D
= -11A
gfs
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
Q
g
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Q
g
Total Gate Charge
32
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
V
DS
= -15V
Pre- Vth Gate-to-Source Charge
Post -Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch charge (Q
gs2
+ Q
gd
)
Output Charge
6.5
3.2
15
nC V
GS
= -4.5V
I
D
= -11A
7.3
18.2
23
See Fig.15
V
DS
= -16V, V
GS
= 0V
nC
Gate Resistance
15
Ω
V
DD
= -15V, V
GS
= -4.5V
I
D
= -11A
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
16
Rise Time
142
76
ns
R
G
= 1.8
Ω
See Fig.17
Turn-Off Delay Time
Fall Time
121
V
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
––– 3241 –––
DS
= -15V
pF
Output Capacitance
–––
–––
820
466
–––
–––
ƒ = 1.0KHz
Reverse Transfer Capacitance
Diode Characteristics
Conditions
Parameter
Min. Typ. Max.
Units
D
S
I
S
MOSFET symbol
Continuous Source Current
–––
–––
-57
showing the
(Body Diode)
A
G
I
SM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
-110
T
J
= 25°C, I
S
= -11A, V
GS
= 0V
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
43
-1.2
65
V
T
J
= 25°C, I
F
= -11A, ,V
DD
= -15V
ns
nC
Q
rr
di/dt = 260A/
μ
s
62
93
Notes:
Pulse width
≤
400
μ
s; duty cycle
≤
2%.
2
©
2014 International Rectifier
February 24, 2014
IRF9395MPbF
Absolute Maximum Ratings
Max.
Parameter
Units
2.1
Power Dissipation
Power Dissipation
Power Dissipation
P
P
P
@T
A
= 25°C
@T
A
= 70°C
@T
C
= 25°C
D
D
D
P
J
1.3
W
57
270
T
T
T
Peak Soldering Temperature
Operating Junction and
-40 to
+ 150
°C
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
60
Units
°C/W
W/°C
R
θ
JA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
R
θ
JA
–––
–––
2.2
R
θ
JA
R
θ
JC
Junction-to-Case
,
–––
1.0
R
θ
J-PCB
Junction-to-PCB Mounted
Linear Derating Factor
–––
0.02
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
R
1
R
1
R
2
R
2
R
3
R
3
R
4
R
4
Ri (°C/W)
τ
i (sec)
0.1
τ
τ
J
τ
J
τ
10.609
3.5414
24.659
21.032
0.239813
0.007823
2.632793
18.15739
A
τ
A
τ
1
τ
1
τ
τ
2
τ
2
3
τ
3
4
τ
4
0.01
0.001
Ci=
τ
i
/
Ri
Ci=
τ
i
/
Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
is measured at
T
J
of approximately 90°C.
θ
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Surface mounted on 1 in. square Cu
board (still
air).
Mounted to a PCB
with small
clip heatsink (still air)
3
©
2014 International Rectifier
February 24, 2014
IRF9395MPbF
1000
100
10
1000
100
10
VGS
-10V
VGS
-10V
TOP
TOP
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
-2.8V
-2.6V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
-2.8V
-2.6V
BOTTOM
BOTTOM
1
-2.6V
1
60
μ
s PULSE WIDTH
Tj = 150°C
≤
-2.6V
1
60
μ
s PULSE WIDTH
Tj = 25°C
≤
1
0.1
0.1
10
100
0.1
10
100
-V ,
Drain-to-Source Voltage (V)
DS
-V ,
Drain-to-Source Voltage (V)
DS
Fig 4.
Typical Output Characteristics
Fig 5.
Typical Output Characteristics
1000
100
10
1.5
1.0
0.5
V
= -15V
I
= -14A
DS
D
V
V
= -10V
= -4.5V
GS
GS
≤
60
μ
s PULSE WIDTH
T
T
T
= 150°C
= 25°C
= -40°C
1
J
J
J
0.1
1
2
3
4
5
-60 -40 -20
0
20 40 60 80
100 12
0
1
40 160
T
J
, Junction Temperature (°C)
-V ,
Gate-to-Source Voltage (V)
GS
Fig 7.
Normalized On-Resistance vs. Temperature
Fig 6.
Typical Transfer Characteristics
38
100000
10000
1000
V
= 0V,
= C
f = 1 KHZ
GS
T
= 25°C
J
C
C
C
+ C
, C
SHORTED
34
30
26
22
18
14
10
6
iss
gs
gd
ds
= C
rss
oss
gd
= C
+ C
ds
gd
Vgs = -4.5V
Vgs = -6.0V
Vgs = -8.0V
Vgs = -10V
Vgs = -12V
C
iss
C
oss
C
rss
2
100
0
25
50
75
100
125
1
10
-V ,
Drain-to-Source Voltage (V)
100
-I ,
Drain Current (A)
D
DS
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
©
2014 International Rectifier
4
February 24, 2014
IRF9395MPbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
100
μ
s
1ms
10ms
DC
1
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
100
-V ,
Source-to-Drain Voltage (V)
SD
-V ,
Drain-to-Source Voltage (V)
DS
Fig 10.
Typical Source-Drain Diode Forward Voltage
Fig 11.
Maximum Safe Operating
Area
80
3.0
2.5
2.0
1.5
1.0
0.5
60
40
20
0
I
I
I
I
= 50
μ
A
= 250
μ
A
= 1.0mA
= 1.0A
D
D
D
D
-75 -50 -25
0
25 50 75
100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
J
, Case Temperature (°C)
C
Fig 13.
Typical Threshold Voltage vs. Junction
Fig 12.
Maximum Drain Current vs. Case Temperature
Temperature
1200
I
D
TOP
-1.2A
-1.9A
1000
800
600
400
200
0
BOTTOM -11A
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
J
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
February 24, 2014
IRF9395MPbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 15a.
Gate Charge Test Circuit
Fig 15b.
Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
L
V
DS
D.U.T
AS
R
G
+
–
V
DD
I
A
20V
I
t
0.01
Ω
AS
p
Fig 16b.
Unclamped Inductive Waveforms
Fig 16a.
Unclamped Inductive Test Circuit
t
t
r
t
t
f
d(on)
d(off)
R
D
V
DS
V
GS
10%
V
GS
D.U.T.
R
G
+
V
DD
–
90%
V
GS
V
DS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 17a.
Switching Time Test Circuit
©
2014 International Rectifier
Fig 17b.
Switching Time Waveforms
6
February 24, 2014
IRF9395MPbF
Driver Gate Drive
P.W.
P
.
W.
Period
D.U.T
Period
D =
+
–
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
•
di/dt controlled by R
G
Re-Applied
Voltage
R
G
+
–
•
Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 18.
Diode Reverse Recovery Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
DirectFET
Board Footprint, MC Outline
(Medium Size Can, C-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and
substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
G
G
S
S
S
S
7
©
2014 International Rectifier
February 24, 2014
IRF9395MPbF
DirectFET
Outline Dimension, MC Outline
(Medium Size Can, C-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes
all recommendations for stencil and
substrate designs.
DIMENSIONS
METRIC
IMPERIAL
CODE MIN
MAX
MIN
MAX
0.250
0.201
0.156
0.018
0.024
0.024
0.024
0.048
0.023
0.079
0.041
0.089
0.028
0.003
0.007
6.25 6.35 0.246
4.80 5.05 0.189
3.85 3.95 0.152
0.35 0.45 0.014
0.58 0.62 0.023
0.58 0.62 0.023
0.58 0.62 0.023
1.18 1.22 0.047
0.56 0.60 0.022
1.98 2.02 0.078
1.02 1.06 0.040
A
B
C
D
E
F
G
H
J
J1
K
L
2.26 0.088
2.22
M
N
P
0.59 0.70 0.023
0.03 0.08 0.001
0.08 0.17 0.003
DirectFET
Part Marking
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates “Lead-Free”
8
©
2014 International Rectifier
February 24, 2014
IRF9395MPbF
DirectFET
T
a
pe & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts (ordered as IRF9395MTRPBF).
DIMENSIONS
METRIC
REEL DIMENSIONS
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
STANDARD OPTION
(QTY 4800)
CODE
MIN
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
METRIC
IMPERIAL
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
CODE
MIN
MIN
MAX
N.C
MAX
N.C
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
330.0
20.2
12.8
1.5
N.C
N.C
0.520
N.C
13.2
N.C
100.0
N.C
N.C
N.C
G
H
18.4
14.4
15.4
0.724
0.567
0.606
G
H
0.488
0.469
12.4
11.9
1.60
0.063
Qualification Information
†
Industrial
†
Qualification level
(per JEDEC JESD47F
††
guidelines)
MSL1
Moisture Sensitivity Level
RoHS Compliant
DirectFET
(per JEDEC J-STD-020D
††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
•
•
•
Updated Qualification
level from “Consumer” to “Industrial” on page 9
Updated data sheet with new IR corporate template
10/25/2013
2/24/2014
Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option
(EOL notice #264)
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
9
©
2014 International Rectifier
February 24, 2014
