Infineon-Technologies-IRF9530NSTRRPBF
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IRF9530NSPbF
IRF9530NLPbF
Benefits
HEXFET
®
Power MOSFET
Advanced Process Technology
Surface Mount (IRF9530NS)
Low-profile through-hole(IRF9530NL)
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free
V
DSS
R
DS(on)
I
D
-100V
0.20
-14A
D
D
Description
Fifth Generation HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
S
S
D
G
G
TO-262 Pak
IRF9530NLPbF
G
D
S
Gate
Drain
Source
The through-hole version (IRF9530NL) is available for low-
profile applications.
Standard Pack
Form
Base part number
IRF9530NLPbF
IRF9530NSPbF
Package Type
Orderable Part Number
Quantity
50
TO-262
D2-Pak
Tube
IRF9530NLPbF (
Obsolete)
Tape and Reel Left
800
IRF9530NSTRLPbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
-14
A
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
-10
-56
3.8
79
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
W
W
0.53
W/°C
V
mJ
A
V
GS
E
AS
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
± 20
250
I
AR
Avalanche Current
-8.4
7.9
E
AR
Repetitive Avalanche Energy
mJ
dv/dt
T
J
Peak Diode Recovery dv/dt
Operating Junction and
-5.0
V/ns
-55 to
+ 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
300
10 lbf•in (1.1N•m)
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ.
–––
–––
Max.
1.9
Units
R
JC
R
JA
°C/W
Junction-to-Ambient ( PCB Mount, steady state)
40
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IRF9530NS/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Units
-100 –––
–––
––– -0.11 ––– V/°C
Reference to 25°C, I
D
= -1mA
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
R
DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
V
GS
= 0V, I
D
= -250µA
––– ––– 0.20
V
GS
= -10V, I
D
= -8.4A
V
S
V
GS(th)
gfs
-2.0
3.2
––– –––
––– -4.0
V
DS
= V
GS
, I
D
= -250µA
DS
= -50V, I
D
= -8.4A
DS
= -100V, V
GS
= 0V
V
DS
= -80V,V
GS
= 0V,T
J
=150°C
Forward Trans conductance
–––
–––
-25
V
V
I
DSS
I
GSS
Drain-to-Source Leakage Current
µA
nA
––– ––– -250
––– ––– -100
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
V
V
GS
= -20V
GS
= 20V
––– –––
––– –––
––– –––
––– –––
100
58
8.3
32
Q
g
Q
gs
Q
gd
t
d(on)
t
r
I
D
= -8.4A
nC V
DS
= -80V
V
GS
= -10V See Fig.6 and 13
–––
–––
–––
–––
15
58
45
46
–––
–––
–––
–––
V
DD
= -50V
I
D
= -8.4A
R
G
= 9.1
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
D
= 6.2
See Fig.6
Between lead,
and center of die contact
L
S
Internal Source Inductance
–––
7.5
–––
nH
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 760
––– 260
––– 170
–––
–––
–––
V
GS
= 0V
pF V
DS
= -25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C,I
S
= -8.4A,V
GS
= 0V
Continuous Source Current
(Body Diode)
I
S
––– –––
––– –––
-14
-56
A
Pulsed Source Current
(Body Diode)
I
SM
V
SD
t
rr
Q
rr
t
on
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– -1.6
V
––– 130
––– 650
190
970
ns T
J
= 25°C ,I
F
= -8.4A
nC di/dt
= -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating;
pulse width limited by max. junction temperature. (See fig. 11)
starting T
J
= 25°C, L = 7.0mH, R
G
= 25
, I
AS
= -8.4A. (See fig. 12)
I
SD
-8.4A, di/dt
-490A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
300µs; duty cycle
2%.
Uses IRF9530N data and test conditions.
When mounted on 1″ square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
2
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IRF9530NS/LPbF
Fig. 2
Typical Output Characteristics
Fig. 1
Typical Output Characteristics
Fig. 4
Normalized On-Resistance
Fig. 3
Typical Transfer Characteristics
vs. Temperature
3
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IRF9530NS/LPbF
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. 7
Typical Source-to-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
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IRF9530NS/LPbF
Fig 10a.
Switching Time Test Circuit
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF9530NS/LPbF
Fig 12a.
Unclamped Inductive Test Circuit
Fig 12c.
Maximum Avalanche Energy
vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Gate Charge Waveform
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IRF9530NS/LPbF
Fig 14.
Peak Diode Recovery dv/dt Test Circuit for PChannel HEXFET® Power MOSFETs
7
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IRF9530NS/LPbF
D2-Pak (TO-263AB) Package Outline
(Dimensions are shown in millimeters (inches))
D2-Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE “L”
F530S
DATE CODE
YEAR 0 =
2000
WEEK 02
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DATE CODE
P =
DESIGNATES LEAD – FREE
PRODUCT (OPTIONAL)
ASSEMBLY
LOT CODE
YEAR 0 =
2000
WEEK 02
A =
ASSEMBLY SITE CODE
8
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IRF9530NS/LPbF
TO-262 Package Outline
(Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THIS
IS AN IRL3103L
LO
T
C
ODE 1789
PART NUMBER
INTERNATIONAL
ASSEMBLED ON W
W
1
9, 1997
RECTIFIER
IN THE ASSEMBLY LINE “C”
LOGO
DATE CODE
YEA
R
7 =
1
997
WEEK 19
ASSEMBLY
LOT CODE
LINE C
OR
PART NUMBER
INTERNATIONAL
RECT
I
FIER
LOGO
DATE CODE
P =
D
ESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEA
R
7 =
1
997
ASSEMBLY
LOT CODE
WEEK 19
A =
A
SSEMBLY SITE CODE
9
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IRF9530NS/LPbF
D2-Pak (TO-263AB) Tape & Reel Information
(Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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IRF9530NS/LPbF
Qualification Information
†
Qualification Level
Industrial
(per JEDEC JESD47F)
††
MSL1
D2-Pak
TO-262
(per JEDEC J-STD-020D)
††
Moisture Sensitivity Level
RoHS Compliant
N/A
Yes
†
†† Applicable
version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Updated datasheet with corporate template.
Added disclaimer on last page.
5/27/2016
TO-262 package was removed from ordering information since it is EOL on page 1.
Trademarks of In
fi
neon Technologies AG
µHVIC™, µIPM™, µPFC™, AU
‐
ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,
DAVE™, DI
‐
POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™,
HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my
‐
d™, NovalithIC™, OPTIGA™,
Op
ꢀ
MOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO
‐
SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™,
SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respec
ꢀ
ve owners.
IMPORTANT NOTICE
Edi
ꢀ
on 2016
‐
04
‐
19
Published by
For further informa
ꢀ
on on the product, technology,
delivery terms and condi
ꢀ
ons and prices please
contact your nearest In
fi
neon Technologies o
ffi
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ꢀ
on given in this document shall in no
event be regarded as a guarantee of condi
ꢀ
ons or
characteris
ꢀ
cs (“Bescha
ff
enheitsgaran
ꢀ
e”) .
In
fi
neon Technologies AG
81726 Munich, Germany
With respect to any examples, hints or any typical
values stated herein and/or any informa
ꢀ
on
regarding the applica
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fi
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Technologies hereby disclaims any and all
warran
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infringement
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Please note that this product is not quali
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according to the AEC Q100 or AEC Q101 documents
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© 2016 In
fi
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All Rights Reserved.
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Document reference
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Technologies in
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11
2016-5-27
