Infineon-Technologies-IRF9953TRPBF
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PD – 95477
IRF9953PbF
HEXFET
®
Power MOSFET
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual P-Channel MOSFET
l
Surface Mount
l
Very Low Gate Charge and
Switching Losses
1
2
3
4
8
S1
G1
D1
V
DSS
= -30V
7
D1
6
S2
D2
5
G2
D2
R
DS(on)
= 0.25
Ω
l
Fully Avalanche Rated
l
Lead-Free
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
on-resistance per silicon area.
This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
Recommended upgrade:
IRF7306 or IRF7316
Lower profile/smaller equivalent:
IRF7506
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powe
r
a
pplications. Wit
h
t
hes
e
i
mprovements
,
m
ultiple
device
s
c
a
n
b
e
u
se
d
i
n
a
n
a
pplicatio
n
w
it
h
d
ramatically
reduced board space.
The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings ( T
A
= 25°C Unless Otherwise Noted)
Symbol
V
DS
V
GS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
-30
± 20
-2.3
V
T
A
= 25°C
T
A
= 70°C
Continuous Drain Current
ꢀ
I
D
-1.8
A
Pulsed
Drain
-10
CurrentI
DM
Continuous Source Current (Diode Conduction)
I
S
1.6
T
A
= 25°C
T
A
= 70°C
2.0
1.3
Maximum Power Dissipation
ꢀ
P
D
W
Single Pulse Avalanche Energy
Avalanche
E
AS
57
mJ
A
CurrentI
AR
-1.3
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
E
AR
0.20
V/
mJ
dv/dt-5.0
T
J,
T
STG
ns
-55 to + 150
°C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambient
ꢀ
R
θ
JA
62.5
°C/W
7/16/04
IRF9953PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-30
V
V
GS
= 0V, I
D
= -250µA
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
0.015
V/°C Reference
to 25°C, I
D
= -1mA
0.165
0.250
0.290
0.400
-1.0
-2.4
-2.0
-25
100
-100
V
GS
= 10V, I
D
= -1.0A
V
GS
= 4.5V, I
D
= -0.50A
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -15V, I
D
= -2.3A
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 55°C
V
GS
= -20V
R
DS(on)
Static Drain-to-Source On-Resistance
Ω
V
GS(th)
g
fs
Gate Threshold Voltage
V
S
Forward Transconductance
I
DSS
I
GSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
GS
= 20V
Q
g
6.1
12
I
D
= -2.3A
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
1.7 3.4
1.1 2.2
nC V
DS
= -10V
V
GS
= -10V, See Fig. 10
9.7
14
20
6.9
19
28
40
14
V
DD
= -10V
I
D
= -1.0A
Ris
e
T
ime
ns
pF
t
d(off)
t
f
Turn-Off Delay Time
Fal
l
T
ime
R
G
= 6.0
Ω
R
D
= 10
Ω
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
190
120
61
Output Capacitance
V
DS
= -15V
= 1.0MHz, See Fig. 5
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
I
S
1.3
A
I
S
M
Pulsed
Source
egral reverse
G
Currentint
16
(Body Diode)
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
0.82
1.2
V
T
J
= 25°C, I
S
= -1.25A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.25A
27
31
54
62
ns
nC
Q
rr
di/dt = -100A/µs
Notes:
Repetitive rating;
pulse width limited by
I
SD
≤
-1.3A, di/dt
≤
-92A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
150°C
,
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 67mH
R
G
= 25
Ω
, I
AS
= -1.3A.
Pulse width
≤
300µs; duty cycle
≤
2%.
ꢀ
Surface mounted on FR-4 board,
t
≤
10sec.
IRF9953PbF
100
10
1
100
10
1
VGS
– 15V
– 10V
VGS
– 15V
– 10V
TOP
TOP
– 7.0V
– 5.5V
– 4.5V
– 4.0V
– 3.5V
– 7.0V
– 5.5V
– 4.5V
– 4.0V
– 3.5V
BOTTOM – 3.0V
BOTTOM – 3.0V
-3.0V
-3.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
A
0.1
0.1
0.1
1
10
0.1
1
10
-V ,
Drain-to-Source Voltage (V)
DS
-V ,
Drain-to-Source Voltage (V)
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
100
100
10
1
10
T
J
= 25°C
T
J
= 150°C
T =
150°C
J
T =
25°C
J
1
V
DS
= -10V
20µs PULSE WIDTH
8.0
A
V
= 0V
GS
0.1
A
0.1
3.0
4.0
5.0
6.0
7.0
0.4
0.6
0.8
1.0
1.2
1.4
–
V
GS
, Gate-to-Source Voltage (V)
-V ,
Source-to-Drain Voltage (V)
SD
Fig 4.
Typical Source-Drain Diode
Fig 3.
Typical Transfer Characteristics
Forward Voltage
IRF9953PbF
2.5
2.0
1.5
1.0
0.5
0.0
2.0
-1.0A
=
I
D
1.5
1.0
0.5
0.0
V
= -4.5V
GS
V
GS
= -10V
V
=
–
10V
GS
A
-60 -40 -20
0
20 40 60 80
100 120 140 160
°
0.0
1.0
2.0
3.0
4.0
5.0
T ,
Junction Temperature (
C)
J
-I ,
Drain Current (A)
D
Fig 5.
Normalized On-Resistance
Fig 6.
Typical On-Resistance Vs. Drain
Vs. Temperature
Current
0.80
150
I
D
TOP
-0.58A
-1.0A
BOTTOM -1.3A
120
90
60
30
0
0.60
0.40
0.20
0.00
I
= -2.3A
D
A
25
50
75
100
125
150
0
3
6
9
12
15
°
Starting T
, Junction Temperature
( C)
J
–
V
GS
, Gate-to-Source Voltage (V)
Fig 7.
Typical On-Resistance Vs. Gate
Fig 8.
Maximum Avalanche Energy
Voltage
Vs. Drain Current
IRF9953PbF
20
16
12
8
400
300
200
100
0
V
C
C
C
= 0V,
f = 1MHz
I
D
= -2.3A
GS
iss
rss
oss
= C
+ C
,
C
SHORTED
V
=-10V
gs
gd
gd
ds
DS
= C
= C
+ C
ds
gd
C
C
iss
oss
C
rss
4
0
A
0
2
4
6
8
10
1
10
100
Q ,
Total Gate Charge (nC)
G
-V ,
Drain-to-Source Voltage (V)
DS
Fig 9.
Typical Capacitance Vs.
Fig 10.
Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
0.50
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
1
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t /
t
1
2. Peak T
=
P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF9953PbF
SO-8 Package
Outline
Dimensions are shown in milimeters (inches)
IN
C
H
ES
MI
L
LI
M
E
TERS
DIM
A
D
B
M
I
N
.0532
MAX
.0688
.0098
.020
M
I
N
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1
.
0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 B
A
S
IC
1.27 B
A
S
IC
0.635
B
A
S
I
C
e1
.
025
B
A
S
IC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F
O
OT
P
RINT
8X 0.72 [.028]
NOT
E
S :
1. DI
M
E
N
S
I
O
NING
&
T
O
L
ER
A
NC
I
N
G
P
ER
A
S
M
E Y14.5M-1994.
2.
C
O
N
T
R
O
L
LING
DI
M
E
N
S
I
O
N: MI
L
LI
M
E
TER
3. DI
M
E
NS
I
O
NS A
R
E S
H
O
WN IN MIL L IME T E RS
[
I
N
C
H
ES ].
4.
O
U
T
L INE
C
O
N
F OR MS
T O
J
EDEC
O
U T
L
INE
MS -012
A
A.
5
6
7
D
I
M
E
N
S
I
O
N DO
E
S
N
OT INC
L
UDE
M
O
L
D PR
O
T
RUSI
O
N
S
.
MO
L
D PR
O
T
RUSI
O
NS NOT
T
O E
X
C
E
ED
0
.15 [.006].
6.46 [.255]
D
I
M
E
N
S
I
O
N DO
E
S
N
OT INC
L
UDE
M
O
L
D PR
O
T
RUSI
O
N
S
.
MO
L
D PR
O
T
RUSI
O
NS NOT
T
O E
X
C
E
ED
0
.25 [.010].
D
I
M
E
N
S
I
O
N
I
S THE LEN
G
T
H
O
F
L
E
A
D
F
O
R
S
O
L
D
ERING
T
O
ASUBSTR
A
T
E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
E
X
A
M
P
LE: THIS IS
A
N
I
RF
7
101 (MO
S
FET)
DAT E
CODE (YWW)
P =
DE S I
G
N
AT E S
L E AD-F
R
E E
PR
O
D
U
C
T (O
P
TI
O
NA
L
)
Y =
L
A
S
T
D
I
G
I
T
O
F
T
HE
Y
E
A
R
WW =
WE E K
XXXX
F
7
101
IN
T
ER
N
A
T
I
O
NAL
RE
C
T
I
FIER
L
O
GO
A =
A
S S E MB
L
Y S IT E
C
ODE
L
O
T CODE
P
A
R
T NU
M
B
ER
IRF9953PbF
SO-8
T
a
pe and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
