Infineon-Technologies-IRFB7440GPBF
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Strong
IR
FET
IRFB7440GPbF
Applications
HEXFET
®
Power MOSFET
l
Brushed Motor drive applications
l
BLDC Motor drive applications
l
Battery powered circuits
l
Half-bridge and full-bridge topologies
l
Synchronous rectifier applications
l
Resonant mode power supplies
l
OR-ing and redundant power switches
l
DC/DC and AC/DC converters
l
DC/AC Inverters
D
S
V
DSS
40V
R
DS(on)
typ.
2.0m
Ω
2.5m
Ω
208A
max.
G
I
D
I
D
120A
(Package Limited)
D
S
D
Benefits
G
l
Improved Gate,
Avalanche and Dynamic dV/dt
TO-220AB
IRFB7440GPbF
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
G
Gate
D
Drain
S
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
Source
l
Halogen-Free
Standard Pack
Base Part Number
Package Type
Complete Part Number
Form
Quantity
IRFB7440GPbF
TO
–
220
Tube
50
IRFB7440GPbF
7.0
6.0
5.0
4.0
3.0
2.0
1.0
240
200
160
120
80
I
= 100A
D
Limited By Package
T
= 125°C
J
40
T
= 25°C
J
0
4
6
8
10 12 14
16 18 20
25
50
T
75
100
125
150
175
, Case Temperature (°C)
C
V
Gate -to -Source Voltage
(V)
GS,
Fig 2.
Maximum Drain Current vs. Case Temperature
Fig 1.
Typical On-Resistance vs. Gate Voltage
www.irf.com
© 2014 International Rectifier
1
IRFB7440GPbF
Absolute Maximum Ratings
Symbol
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Max.
208
Units
I
D
@ T
C
= 25°C
147
120
I
D
@ T
C
= 100°C
A
I
D
@ T
C
= 25°C
772
I
DM
208
Maximum Power Dissipation
P
D
@T
C
= 25°C
W
1.4
Linear Derating Factor
W/°C
V
± 20
Gate-to-Source Voltage
V
GS
T
J
-55 to
+ 175
Operating Junction and
°C
Storage Temperature Range
T
STG
300
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
10lbf in
(1.1N m)
Avalanche Characteristics
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
E
AS (Thermally limited)
238
560
mJ
E
AS (Thermally limited)
I
AR
See Fig. 14, 15, 22a, 22b
A
Repetitive Avalanche Energy
E
AR
mJ
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ.
Max.
0.72
Units
R
θ
–––
0.50
–––
JC
°C/W
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
R
θ
–––
62
CS
R
θ
JA
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter
Min.
40
Typ.
–––
0.035
2.0
Max. Units
Conditions
V
(
B
R)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
2.5
V
V
GS
= 0V, I
D
= 250
μ
A
Δ
V
(BR)DSS
/
Δ
T
J
R
D
S
(on)
–––
–––
–––
2.2
V/°C Reference
to 25°C, I
D
= 5.0mA
m
Ω
m
Ω
V
V
GS
= 10V, I
D
= 100A
V
GS
= 6.0V, I
D
= 50A
V
DS
= V
GS
, I
D
= 100
μ
A
3.0
–––
3.9
V
GS(th)
I
DSS
Gate Threshold Voltage
3.0
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.6
1.0
μ
A
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
GS
= 20V
V
GS
= -20V
150
100
-100
–––
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA
V
R
G
Ω
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising
from heating of the device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating;
pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.048mH, R
G
= 50
Ω
, I
AS
= 100A, V
GS
=10V.
I
SD
≤
100A, di/dt
≤
1330A/
μ
s, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
ꢀ
Pulse width
≤
400
μ
s; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
R
θ
is measured at T
J
approximately 90°C.
.
Limited by T
Jmax
starting T
J
= 25°C, L= 1mH, R
G
= 50
Ω
, I
AS
= 34A, V
GS
=10V.
www.irf.com
© 2014 International Rectifier
November 19, 2014
2
IRFB7440GPbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter
Min.
88
Typ.
–––
90
Max. Units
Conditions
gfs
Forward Transconductance
Total Gate Charge
–––
135
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
V
DS
= 10V, I
D
= 100A
D
= 100A
V
DS
=20V
GS
= 10V
D
= 100A, V
DS
=0V, V
GS
= 10V
Q
g
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
I
Q
gs
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Total Gate Charge Sync. (Q
g
– Q
gd
Turn-On Delay Time
Rise Time
23
Q
gd
32
V
Q
sync
)
58
I
t
d
(
o
n)
24
ns
V
DD
= 20V
I
D
= 30A
t
r
68
t
d
(
o
ff)
Turn-Off Delay Time
Fall Time
115
68
R
G
= 2.7
Ω
t
f
V
GS
= 10V
C
iss
Input Capacitance
4730
680
460
845
980
pF
V
GS
= 0V
C
oss
Output Capacitance
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
ƒ = 1.0 MHz
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
C
oss
eff. (ER)
C
oss
eff. (TR)
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
Diode Characteristics
Symbol
Parameter
Min.
Typ.
Max. Units
Conditions
MOSFET symbol
D
S
208
I
S
Continuous Source Current
–––
–––
A
A
V
(Body Diode)
showing the
G
I
SM
Pulsed Source Current
–––
–––
772
integral reverse
(Body Diode)
p-n junction diode.
V
SD
dv/dt
t
rr
Diode Forward Voltage
Peak Diode Recovery
–––
–––
–––
–––
–––
–––
–––
0.9
6.8
24
1.3
–––
–––
–––
–––
–––
–––
T
J
= 25°C, I
S
= 100A, V
GS
= 0V
V/ns T
J
= 175°C, I
S
= 100A, V
DS
= 40V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ns
nC
A
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
R
= 34V,
28
I
F
= 100A
di/dt = 100A/
μ
s
Q
rr
17
20
I
RRM
1.3
www.irf.com
© 2014 International Rectifier
November 19, 2014
3
IRFB7440GPbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
1
60
μ
s PULSE WIDTH
Tj = 25°C
60
μ
s PULSE WIDTH
Tj = 175°C
≤
≤
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 3.
Typical Output Characteristics
Fig 4.
Typical Output Characteristics
1000
100
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 100A
= 10V
D
V
GS
T
= 175°C
J
T
= 25°C
J
V
= 10V
DS
≤
60
μ
s PULSE WIDTH
1.0
3
4
5
6
7
8
9
-60 -40 -20
0 20
40 60 80
100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6.
Normalized On-Resistance vs. Temperature
Fig 5.
Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I =
100A
D
C
C
C
+ C
, C
SHORTED
iss
gs
gd
ds
12.0
= C
rss
oss
gd
= C
+ C
V
= 32V
= 20V
DS
ds
gd
V
10.0
8.0
6.0
4.0
2.0
0.0
DS
C
C
iss
oss
rss
C
100
1
10
, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
V
Q ,
Total Gate Charge (nC)
DS
G
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
© 2014 International Rectifier
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
4
IRFB7440GPbF
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100
μ
sec
1msec
Limited by
package
T
= 25°C
J
10msec
DC
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.0
0.5
1.0
1.5
2.0
2.5
0.1
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 10.
Maximum Safe Operating Area
Fig 9.
Typical Source-Drain Diode
Forward Voltage
0.8
50
49
48
47
46
45
44
43
42
41
40
Id = 5.0mA
V
= 0V to 32V
DS
0.6
0.4
0.2
0.0
0
5
10 15 20 25 30 35 40 45
Drain-to-Source Voltage (V)
-60 -40 -20
0 20
40 60 80
100120140160180
, Temperature ( °C )
T
J
V
DS,
Fig 11.
Drain-to-Source Breakdown Voltage
Fig 12.
Typical C
OSS
Stored Energy
40
V
V
V
V
V
= 5.5V
GS
= 6.0V
= 7.0V
= 8.0V
=10V
GS
GS
GS
GS
30
20
10
0
0
100 200 300 400 500 600 700 800
I ,
Drain Current (A)
D
Fig 13.
Typical On-Resistance vs. Drain Current
November 19, 2014
5
IRFB7440GPbF
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Δ
Tj = 150°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15.
Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
Δ
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche =
t
av
·f
250
200
150
100
50
TOP
BOTTOM 1.0%
Duty Cycle
= 100A
Single Pulse
I
D
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
D
T/ Z
thJC
I
av
= 2
D
T/ [1.3·BV·Z
th
]
0
25
50
75
100
125
150
175
E
AS (AR)
= P
D (ave)
·t
av
Starting T
, Junction Temperature (°C)
J
Fig 16.
Maximum Avalanche Energy vs. Temperature
www.irf.com
© 2014 International Rectifier
November 19, 2014
6
IRFB7440GPbF
5.0
4.0
3.0
2.0
1.0
8
7
6
5
4
3
2
1
I =
60A
F
V
= 34V
R
T =
25°C
J
T =
125°C
J
I
I
I
= 100
μ
A
= 1.0mA
= 1.0A
D
D
D
0
200
400
600
800
1000
-75 -50 -25
0
25 50 75
100 125 150 175
T ,
Temperature ( °C )
di /dt
(A/
μ
s)
F
J
Fig. 18
– Typical Recovery Current vs. di
f
/dt
Fig 17.
Threshold Voltage vs. Temperature
8
110
I =
100A
F
I =
60A
F
7
100
V
= 34V
V
= 34V
R
R
T =
25°C
T =
25°C
J
J
6
5
4
3
2
1
90
80
70
60
50
40
T =
125°C
J
T =
125°C
J
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt
(A/
μ
s)
di /dt
(A/
μ
s)
F
F
Fig. 19
– Typical Recovery Current vs. di
f
/dt
Fig. 20
– Typical Stored Charge vs. di
f
/dt
100
I =
100A
F
V
= 34V
R
80
60
40
20
0
T =
25°C
J
T =
125°C
J
0
200
400
600
800
1000
di /dt
(A/
μ
s)
F
Fig. 21
– Typical Stored Charge vs. di
f
/dt
November 19, 2014
7
IRFB7440GPbF
Driver Gate Drive
P.W.
P
.
W.
Period
D.U.T
Period
D =
+
–
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/dt controlled by R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Current
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 22.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
V
G
S
Ω
0.01
t
p
I
AS
Fig 22b.
Unclamped Inductive Waveforms
Fig 22a.
Unclamped Inductive Test Circuit
R
D
V
DS
V
DS
90%
V
GS
D.U.T.
R
G
+
V
DD
–
V
GS
10%
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 23a.
Switching Time Test Circuit
Fig 23b.
Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.
T
.
Vds
Vgs
50K
Ω
.2
μ
F
12V
.3
μ
F
+
V
DS
D.U.
T
.
–
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 24a.
Gate Charge Test Circuit
www.irf.com
© 2014 International Rectifier
Fig 24b.
Gate Charge Waveform
8
IRFB7440GPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EX
A
M
P
LE: THIS
IS
A
N
I
RFB4310
G
P
BF
P
A
R
T NU
M
B
ER
DAT E
COD
E
:
IN
T
ER
N
A
T
I
ONAL
RE
C
T
IFIER
L
O
GO
Note: “G”
s
u
ffix in p
a
r
t
n
umber
in
d
i
c
ates “
H
a
l
o
gen
– F
r
e
e”
Y= L
A
S
T
D
IGIT OF
CAL E NDAR
YE AR
Note: “P” in
a
s
s
e
mb
l
y li
n
e
p
o
s
i
t
i
o
n
in
d
i
c
ates “
L
e
ad
–
F
r
e
e”
AS S E MB L Y
L
O
T CO
D
E
WW= WO
R
K
W
E
EK
X= F ACT O
R
Y
C
ODE
TO-220AB packages are not recommended for Surface Mount Application.
www.irf.com
© 2014 International Rectifier
November 19, 2014
9
IRFB7440GPbF
Qualification information
†
Q
u
alification level
I
n
dustrial
(per JEDEC JESD47F
††
guidelines)
Moisture Sensitivity Level
RoHS compliant
TO-220
Not app
l
i
c
ab
l
e
Yes
Qualification standards can be found at International Rectifiers web site:
http://www.irf.com/product-info/reliability/
Applicable
version of JEDEC standard at the time of product release.
Revision History
Date
Comment
•
•
•
Updated data sheet with IR corporate template.
Updated E
AS (L =1
m
H)
= 560mJ on page 2
11/19/2014
Ω
Updated note 9
“Limited by T
J
m
a
x
, starting T
= 25°C, L = 1mH, R
G
= 50
, I
AS
= 34A, V
GS
=10V”. on
page 2
J
•
Updated package outline
on page 9.
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
www.irf.com
© 2014 International Rectifier
November 19, 2014
10
