Infineon-Technologies-IRFB7440PBF
| Part # | Infineon-Technologies-IRFB7440PBF |
Download  | Infineon-Technologies-IRFB7440PBF |
Strong
IR
FET
IRFB7440PbF
Applications
HEXFET
®
Power MOSFET
l
Brushed Motor drive applications
l
BLDC Motor drive applications
l
Battery powered circuits
l
Half-bridge and full-bridge topologies
l
Synchronous rectifier applications
l
Resonant mode power supplies
l
OR-ing and redundant power switches
l
DC/DC and AC/DC converters
l
DC/AC Inverters
D
S
V
DSS
40V
R
DS(on)
typ.
max.
2.0m
2.5m
Ω
Ω
G
I
D
172A
I
D
120A
(Package Limited)
D
S
D
Benefits
G
l
Improved Gate,
Avalanche and Dynamic dv/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
TO-220AB
IRFB7440PbF
G
Gate
D
Drain
S
Source
l
RoHS Compliant, Halogen-Free*
B
a
s
e
P
art Number
Package Type
Standard Pack
Form
Tube
Complete Part Number
Quantity
50
IRFB7440PbF
TO-220
IRFB7440PbF
7.0
6.0
5.0
4.0
3.0
2.0
1.0
200
150
100
50
I
= 100A
D
Limited By Package
T
= 125°C
J
T
= 25°C
J
0
4
6
8
10 12 14
16 18 20
25
50
75
100
125
150
175
T
, Case Temperature (°C)
C
V
Gate -to -Source Voltage
(V)
GS,
Fig 2.
Maximum Drain Current vs. Case Temperature
Fig 1.
Typical On-Resistance vs. Gate Voltage
www.irf.com
© 2015 International Rectifier
February 19, 2015
1
IRFB7440PbF
Absolute Maximum Ratings
Symbol
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Max.
Units
172
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
122
120
772
143
0.95
± 20
A
Maximum Power Dissipation
P
D
@T
C
= 25°C
W
Linear Derating Factor
W/°C
V
Gate-to-Source Voltage
V
GS
T
J
Operating Junction and
-55 to
+ 175
Storage Temperature Range
°C
T
STG
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
300
10lbf in
(1.1N m)
Avalanche Characteristics
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
E
AS (Thermally limited)
161
387
mJ
E
AS (Thermally limited)
I
AR
See Fig. 14, 15, 22a, 22b
A
Repetitive Avalanche Energy
E
AR
mJ
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
Units
Junction-to-Case
1.05
R
θ
JC
R
θ
CS
R
θ
JA
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
°C/W
0.50
–––
–––
62
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Parameter
Min.
Typ.
Max.
Units
Conditions
V
GS
= 0V, I
D
= 250
μ
A
V/°C Reference
to 25°C, I
D
= 5.0mA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40
–––
–––
V
V /
T
(BR)DSS
Δ
––– 0.035 –––
Δ
J
m
m
R
DS(on)
–––
–––
2.2
2.0
3.0
2.5
–––
3.9
V
GS
= 10V, I
D
= 100A
V
GS
= 6.0V, I
D
= 50A
V
DS
= V
GS
, I
D
= 100
μ
A
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
Ω
Ω
V
GS(th)
I
DSS
Gate Threshold Voltage
3.0
V
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.6
1.0
μ
A
nA
Ω
150
100
-100
–––
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
V
GS
= -20V
R
G
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
ꢀ
Pulse width
≤
400
μ
s; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
som
e
l
ea
d
m
ountin
g
a
rrangements
.
(Refe
r
t
o
A
N-1140)
Repetitive rating;
pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.032mH
R
G
= 50
Ω
, I
AS
= 100A, V
GS
=10V.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50
Ω
, I
AS
= 28A,
V
GS
=10V.
I
SD
≤
100A, di/dt
≤
1330A/
μ
s, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
*
Halogen -Free since April 30, 2014
www.irf.com
© 2015 International Rectifier
February 19, 2015
2
IRFB7440PbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Forward Transconductance
Total Gate Charge
Min.
88
Typ.
–––
90
Max.
–––
135
–––
–––
–––
–––
–––
–––
–––
Units
S
Conditions
gfs
Q
g
V
DS
= 10V, I
D
= 100A
–––
–––
–––
–––
–––
–––
–––
–––
nC
I
D
= 100A
V
DS
=20V
V
GS
= 10V
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Total Gate Charge Sync. (Q
g
– Q
gd
)
Turn-On Delay Time
23
32
58
24
ns
V
DD
= 20V
I
D
= 30A
Rise Time
68
t
d(off)
t
f
Turn-Off Delay Time
115
68
R =
2.7
Ω
G
V
GS
= 10V
Fall Time
C
iss
C
oss
C
rss
Input Capacitance
––– 4730 –––
pF
V
GS
= 0V
Output Capacitance
–––
–––
–––
–––
680
460
845
980
–––
–––
–––
–––
V
DS
= 25V
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
ƒ = 1.0 MHz
C
oss
eff. (ER)
oss
eff. (TR)
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
C
Diode Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
172
I
S
Continuous Source Current
–––
–––
A
MOSFET symbol
D
S
(Body Diode)
showing the
G
I
SM
Pulsed Source Current
–––
–––
772
A
V
integral reverse
(Body Diode)
p-n junction diode.
V
SD
dv/dt
t
rr
Diode Forward Voltage
Peak Diode Recovery
–––
–––
–––
–––
–––
–––
–––
0.9
6.8
24
1.3
–––
–––
–––
–––
–––
–––
T
J
= 25°C, I
S
= 100A, V
GS
= 0V
V/ns T
J
= 175°C, I
S
= 100A, V
DS
= 40V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ns
nC
A
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
R
= 34V,
28
I
F
= 100A
di/dt = 100A/
μ
s
Q
rr
17
20
I
RRM
1.3
www.irf.com
© 2015 International Rectifier
February 19, 2015
3
IRFB7440PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
1
60
μ
s PULSE WIDTH
Tj = 25°C
60
μ
s PULSE WIDTH
Tj = 175°C
≤
≤
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 3.
Typical Output Characteristics
Fig 4.
Typical Output Characteristics
1000
100
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 100A
= 10V
D
V
GS
T
= 175°C
J
T
= 25°C
J
V
= 10V
DS
≤
60
μ
s PULSE WIDTH
1.0
3
4
5
6
7
8
9
-60 -40 -20
0 20
40 60 80
100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6.
Normalized On-Resistance vs. Temperature
Fig 5.
Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I =
100A
D
C
C
C
+ C
, C
SHORTED
iss
gs
gd
ds
12.0
= C
rss
oss
gd
= C
+ C
V
= 32V
= 20V
DS
ds
gd
V
10.0
8.0
6.0
4.0
2.0
0.0
DS
C
C
iss
oss
rss
C
100
1
10
, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
V
Q ,
Total Gate Charge (nC)
DS
G
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
© 2015 International Rectifier
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
February 19, 2015
4
IRFB7440PbF
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100
μ
sec
1msec
Limited by package
T
= 25°C
J
1
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
DC
0.1
0.1
0.0
0.5
1.0
1.5
2.0
2.5
0.1
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 10.
Maximum Safe Operating Area
Fig 9.
Typical Source-Drain Diode
Forward Voltage
0.8
50
49
48
47
46
45
44
43
42
41
40
Id = 5.0mA
V
= 0V to 32V
DS
0.6
0.4
0.2
0.0
0
5
10 15 20 25 30 35 40 45
Drain-to-Source Voltage (V)
-60 -40 -20
0 20
40 60 80
100120140160180
, Temperature ( °C )
T
J
V
DS,
Fig 11.
Drain-to-Source Breakdown Voltage
Fig 12.
Typical C
OSS
Stored Energy
40
V
V
V
V
V
= 5.5V
GS
= 6.0V
= 7.0V
= 8.0V
=10V
GS
GS
GS
GS
30
20
10
0
0
100 200 300 400 500 600 700 800
I ,
Drain Current (A)
D
Fig 13.
Typical On-Resistance vs. Drain Current
February 19, 2015
5
IRFB7440PbF
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 14.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Δ
Tj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15.
Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
Δ
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche =
t
av
·f
200
150
100
50
TOP
BOTTOM 1.0%
Duty Cycle
= 100A
Single Pulse
I
D
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
D
T/ Z
thJC
I
av
= 2
D
T/ [1.3·BV·Z
th
]
0
25
50
75
100
125
150
175
E
AS (AR)
= P
D (ave)
·t
av
Starting T
, Junction Temperature (°C)
J
Fig 16.
Maximum Avalanche Energy vs. Temperature
www.irf.com
© 2015 International Rectifier
February 19, 2015
6
IRFB7440PbF
5.0
4.0
3.0
2.0
1.0
8
7
6
5
4
3
2
1
I =
60A
F
V
= 34V
R
T =
25°C
J
T =
125°C
J
I
I
I
= 100
μ
A
= 1.0mA
= 1.0A
D
D
D
0
200
400
600
800
1000
-75 -50 -25
0
25 50 75
100 125 150 175
T
, Temperature ( °C )
di /dt
(A/
μ
s)
F
J
Fig. 18
– Typical Recovery Current vs. di
f
/dt
Fig 17.
Threshold Voltage vs. Temperature
8
110
I =
100A
F
I =
60A
F
7
100
V
= 34V
V
= 34V
R
R
T =
25°C
T =
25°C
J
J
6
5
4
3
2
1
90
80
70
60
50
40
T =
125°C
J
T =
125°C
J
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt
(A/
μ
s)
di /dt
(A/
μ
s)
F
F
Fig. 19
– Typical Recovery Current vs. di
f
/dt
Fig. 20
– Typical Stored Charge vs. di
f
/dt
100
I =
100A
F
V
= 34V
R
80
60
40
20
0
T =
25°C
J
T =
125°C
J
0
200
400
600
800
1000
di /dt
(A/
μ
s)
F
Fig. 21
– Typical Stored Charge vs. di
f
/dt
February 19, 2015
7
IRFB7440PbF
Driver Gate Drive
P.W.
P
.
W.
Period
D.U.T
Period
D =
+
–
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/dt controlled by R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Current
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 22.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
2
V
0
G
V
S
Ω
0.01
t
p
I
AS
Fig 22b.
Unclamped Inductive Waveforms
Fig 22a.
Unclamped Inductive Test Circuit
R
D
V
DS
V
DS
90%
V
GS
D.U.T.
R
G
+
V
DD
–
V
GS
10%
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 23a.
Switching Time Test Circuit
Fig 23b.
Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.
T
.
Vds
Vgs
50K
Ω
.2
μ
F
12V
.3
μ
F
+
V
DS
D.U.
T
.
–
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 24a.
Gate Charge Test Circuit
www.irf.com
© 2015 International Rectifier
Fig 24b.
Gate Charge Waveform
February 19, 2015
8
IRFB7440PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
TO-220AB packages are not recommended for Surface Mount Application.
www.irf.com
© 2015 International Rectifier
February 19, 2015
9
IRFB7440PbF
Qualification information
†
Q
u
alification level
I
n
dustrial
(per JEDEC JESD47F
††
guidelines)
Moisture Sensitivity Level
RoHS compliant
TO-220
Not app
l
i
c
ab
l
e
Yes
Qualification standards can be found at International Rectifiers web site:
http://www.irf.com/product-info/reliability/
Applicable
version of JEDEC standard at the time of product release.
Revision History
Date
Comment
•
•
Updated data sheet with new IR corporate template.
Updated package outline and part marking on page 9.
Added bullet point in the
Benefits “RoHS
Compliant, Halogen -Free” on page 1.
Updated E
AS (L =1
m
H)
= 387mJ on page 2
4/22/2014
•
•
•
2/19/2015
Ω
Updated note 9
“Limited by T
J
m
a
x
, starting T
= 25°C, L = 1mH, R
G
= 50
, I
AS
= 28A, V
GS
=10V”. on
page 2
J
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
www.irf.com
© 2015 International Rectifier
February 19, 2015
10
