Infineon-Technologies-IRFB7537PBF

http://www.irf.com/technical-info/appnotes/an-994.pdf

October 7, 2014

IRFB/S/SL7537PbF

Absolute Maximum Rating

Symbol

Parameter

Max.

173

Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V

@ T

= 100°C

Continuous Drain Current, V

@ 10V

122

Pulsed Drain Current



Maximum Power Dissipation

Linear Derating Factor

700

230

1.5

= 25°C

W/°C

Gate-to-Source Voltage

± 20

STG

Operating Junction and

Storage Temperature Range

-55 to

+ 175

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

Avalanche Characteristics

AS (L=1mH)

270

554

Single Pulse Avalanche Energy



Single Pulse Avalanche Energy



Avalanche Current



See Fig 15, 16, 23a, 23b

Repetitive Avalanche Energy



Thermal Resistance

Symbol

Parameter

Typ.

–––

0.50

–––

Max.

0.65

–––

Units

Junction-to-Case





Case-to-Sink, Flat Greased Surface

Junction-to-Ambient (TO-220)



°C/W

Junction-to-Ambient (PCB

Mount) (D

-Pak)



Static @ T

= 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ.

Max. Units

Conditions

(BR)DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

––– –––

= 0V, I

= 250µA

–––

40 –––

mV/°C Reference

to 25°C, I

= 1mA





(BR)DSS



––– 2.75

3.30

––– 3.50 –––

_{GS
= 10V, I
D
= 100A
}

_{GS
= 6.0V, I
D
= 50A
}

DS(on)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage



GS(th)

2.1 –––

––– –––

3.7

1.0

= V

, I

= 150µA

_{DS
=60 V, V
GS
= 0V}

_{DS
=60V,V
GS
= 0V,T
J
=125°C}

_{GS
= 20V}

DSS

Drain-to-Source Leakage Current

µA

––– ––– 150

––– ––– 100

––– –––

-100

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Gate Resistance

GSS

_{GS
= -20V}

–––

2.0

–––



Notes:





Repetitive rating; pulse width limited by max. junction temperature.



Limited by T

Jmax

, starting T

= 25°C, L = 54µH, R

= 50



, I

= 100A, V

=10V.







100A, di/dt



1130A/µs, V



(BR)DSS

, T



175°C.





Pulse width



400µs; duty cycle



2%.







_{oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS}

oss

eff. (ER) is a fixed capacitance that gives the same energy as C

oss

while V

is rising from 0 to 80% V

DSS



is measured at T

approximately 90°C.



When mounted on 1″ square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques

refer to application note #AN-994.



Limited by T

Jmax

, starting T

= 25°C, L = 1mH, R

= 50



, I

= 33A, V

=10V.

October 7, 2014

IRFB/S/SL7537PbF

Dynamic Electrical

Characteristics @ T

= 25°C (unless otherwise specified)

Symbol

gfs

Parameter

Forward Transconductance

Total Gate Charge

Min.

190

–––

Typ. Max.

Units

Conditions

= 10V, I

=100A

= 100A

–––

142

–––

210

–––

Gate-to-Source Charge

Gate-to-Drain Charge

Total Gate Charge Sync. (Qg– Qgd)

Turn-On Delay Time

= 30V

= 10V

sync

d(on)

= 30V

= 100A

Rise Time

105

d(off)

Turn-Off Delay Time

Fall Time

–––

= 2.7



= 10V



iss

oss

rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

7020

640

395

= 0V

= 25V

ƒ = 1.0MHz,

See Fig.7

Effective Output Capacitance

(Energy Related)

oss eff.(ER)

oss eff.(TR)

–––

665

880

–––

= 0V, VDS = 0V to 48V



= 0V, VDS = 0V to 48V



Output Capacitance (Time Related)

Diode Characteristics

Symbol

Parameter

Min.

Typ. Max.

Units

Conditions

MOSFET symbol

Continuous Source Current

(Body Diode)

–––

173

showing the

Pulsed Source Current

(Body Diode)



integral reverse

p-n junction diode.

–––

700

1.2

Diode Forward Voltage

= 25°C,I

= 100A,V

= 0V



dv/dt

Peak Diode Recovery dv/dt



–––

2.1

––– V/ns

= 175°C,I

=100A,V

= 60V

–––

= 25°C

= 51V

= 100A,

Reverse Recovery Time

= 125°C

= 25°C

di/dt = 100A/µs



Reverse Recovery Charge

Reverse Recovery Current

= 125°C

= 25°C



RRM

October 7, 2014

IRFB/S/SL7537PbF

1000

100

1000

100

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

TOP

BOTTOM

4.5V

60µs

Tj = 175°C



PULSE WIDTH

60µs



PULSE WIDTH

Tj = 25°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 4.

Typical Output Characteristics

Fig 3.

Typical Output Characteristics

2.4

2.0

1.6

1.2

0.8

0.4

1000

100

= 100A

= 10V

= 175°C

= 25°C

= 25V



60µs PULSE WIDTH

0.1

-60

-20

100

140

180

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 6.

Normalized On-Resistance vs. Temperature

Fig 5.

Typical Transfer Characteristics

14.0

100000

10000

1000

= 0V,

f = 1 MHZ

= 100A

= C

+ C

, C

SHORTED

iss

gd ds

12.0

10.0

8.0

= C

rss

= 48V

= 30V

= C

+ C

oss

VDS= 12V

iss

6.0

oss

rss

4.0

2.0

0.0

100

150

0.1

100

, Total

Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 8.

Typical Gate Charge vs.

Fig 7.

Typical Capacitance vs. Drain-to-Source Voltage

Gate-to-Source Voltage

October 7, 2014

IRFB/S/SL7537PbF

1000

100

1000

100

100µsec

1msec

= 175°C

OPERATION IN THIS AREA

LIMITED BY R

(on)

= 25°C

10msec

Tc = 25°C

Tj = 175°C

Single Pulse

= 0V

0.1

0.4

0.7

1.0

1.3

1.6

1.9

2.2

, Drain-to-Source Voltage (V)

, Source-to-Drain Voltage (V)

Fig 10.

Maximum Safe Operating Area

Fig 9.

Typical Source-Drain Diode Forward Voltage

1.2

Id = 1.0mA

1.0

0.8

0.6

0.4

0.2

0.0

-60

-20

100

140

180

, Temperature ( °C )

Drain-to-Source Voltage (V)

DS,

Fig 11.

Drain-to-Source Breakdown Voltage

Fig 12.

Typical C

oss

Stored Energy

5.1

VGS = 5.5V

VGS = 6.0V

VGS = 7.0V

VGS = 8.0V

VGS = 10V

4.6

4.1

3.6

3.1

2.6

100

150

200

, Drain Current (A)

Fig 13.

Typical On-Resistance vs. Drain Current

October 7, 2014

IRFB/S/SL7537PbF

0.1

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

0.001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 14.

Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

100

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming



Tj = 150°C and

Tstart =25°C (Single Pulse)

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming



j = 25°C and

Tstart = 150°C.

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15.

Avalanche Current vs. Pulse Width

300

250

200

150

100

TOP

BOTTOM 1.0%

Duty Cycle

= 100A

Single Pulse

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1.Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T

jmax

. This is validated for every

part type.

2. Safe operation in Avalanche is allowed as long asT

jmax

is not

exceeded.

3. Equation below based on circuit and waveforms shown in Figures

23a, 23b.

4. P

D (ave)

= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage

increase during avalanche).

6. I

= Allowable avalanche current.



T = Allowable rise in junction temperature, not to exceed T

jmax

(assumed as 25°C in Figure 14, 15).

= Average time in avalanche.

D = Duty cycle in avalanche =

tav ·f

100

125

150

175

thJC

(D, t

) = Transient thermal resistance, see Figures 14)

Starting T

, Junction Temperature (°C)

PD (ave) = 1/2 ( 1.3·BV·I

) =



T/ Z

thJC

_{av
= 2

T/ [1.3·BV·Z
th
]}

AS (AR)

= P

D (ave)· av

Fig 16.

Maximum Avalanche Energy vs. Temperature

October 7, 2014

IRFB/S/SL7537PbF

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

= 60A

= 51V

T =

25°C

T =

125°C

ID = 150µA

ID = 250µA

ID = 1.0mA

ID = 1.0A

-75 -50 -25

25 50 75

100 125 150 175

, Temperature ( °C )

200

400

600

800

1000

di /dt

(A/µs)

Fig 17.

Threshold Voltage vs. Temperature

Fig 18.

Typical Recovery Current vs. dif/dt

225

= 100A

= 51V

= 60A

= 51V

200

175

150

125

100

T =

25°C

T =

25°C

T =

125°C

T =

125°C

200

400

600

800

1000

200

400

600

800

1000

di /dt

(A/µs)

di /dt

(A/µs)

Fig 19.

Typical Recovery Current vs. dif/dt

Fig 20.

Typical Stored Charge vs. dif/dt

225

= 100A

= 51V

200

175

150

125

100

T =

25°C

T =

125°C

200

400

600

800

1000

di /dt

(A/µs)

Fig 21.

Typical Stored Charge vs. dif/dt

October 7, 2014

IRFB/S/SL7537PbF

Fig 22.

Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET

Power MOSFETs

(BR)DSS

15V

DRIVER

D.U.T

–

20V

0.01



Fig 23a.

Unclamped Inductive Test Circuit

Fig 23b.

Unclamped Inductive Waveforms

Fig 24a.

Switching Time Test Circuit

Fig 24b.

Switching Time Waveforms

Vds

Vgs

VDD

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 25b.

Gate Charge Waveform

Fig 25a.

Gate Charge Test Circuit

October 7, 2014

IRFB/S/SL7537PbF

TO-220AB Package Outline

(Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

E X A M

P L E :

T H

S IS A

N IR

F 1 0 1 0

L O

C O D E

1 7 8 9

A S S E M

B L E D

IN T

H E

A S S E M

B L Y

L IN E

“C ”

P A R T

N U M B E R

D A T E

C O D E

IN T

E R N A T IO N A L

R E C T

F IE R

L O

G O

1 9 ,

2 0 0 0

Y E A R

E E K

1 9

N E

2 0 0 0

N o t

e :

“

P “

in a

s s e m

b ly

lin e

p o s it

io n

in d ic a t

e s

“L e a d

F r

e e ”

A S S E M

B L Y

–

L O

T C

O D E

TO-220AB packages are not recommended for Surface Mount Application

Note: For the most current drawing please refer to IR website at

October 7, 2014

IRFB/S/SL7537PbF

TO-262 Package Outline

(Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

EXAMPLE: THIS

IS AN IRL3103L

LOT CODE 1789

PART NUMBER

INTERNATIONAL

ASSEMBLED ON W

9, 1997

RECTIFIER

HE ASSEMBL

INE “C”

LOGO

DATE CODE

YEA

7 =

997

WEEK 19

ASSEMBLY

LOT CODE

LINE C

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

DATE CODE

P =

ESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

YEA

7 =

997

ASSEMBLY

LOT CODE

WEEK 19

A =

SSEMBLY SITE CODE

Note: For the most current drawing please refer to IR website at

October 7, 2014

IRFB/S/SL7537PbF

Pak (TO-263AB) Package Outline

(Dimensions are shown in millimeters (inches))

Pak (TO-263AB) Part Marking Information

THIS IS AN IRF530S WITH

LOT CODE 8024

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

ASSEMBLED ON WW 02, 2000

IN THE ASSEMBLY LINE “L”

F530S

DATE CODE

YEAR 0 =

2000

WEEK 02

ASSEMBLY

LOT CODE

LINE L

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

F530S

DATE CODE

P =

DESIGNATES LEAD – FREE

PRODUCT (OPTIONAL)

ASSEMBLY

LOT CODE

YEAR 0 =

2000

WEEK 02

A =

ASSEMBLY SITE CODE

Note: For the most current drawing please refer to IR website at

October 7, 2014

IRFB/S/SL7537PbF

Pak (TO-263AB) Tape & Reel Information

(Dimensions are shown in millimeters (inches))

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

TRL

11.60 (.457)

11.40 (.449)

1.85 (.073)

1.65 (.065)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS

TO EIA-418.

2. CONTROLLING

DIMENSION: MILLIMETER.

3. DIMENSION

MEASURED @ HUB.

4. INCLUDES

FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

Note: For the most current drawing please refer to IR website at

http://www.irf.com/product-info/reliability/

October 7, 2014

IRFB/S/SL7537PbF

Qualification Information

†

Qualification Level

Industrial

(per JEDEC JESD47F)

††

TO-220

Pak

N/A

Moisture Sensitivity Level

MSL1

TO-262

N/A

Yes

RoHS Compliant

†

Qualification standards can be found at International Rectifier’s web site:

†† Applicable

version of JEDEC standard at the time of product release.

Revision History

Date

Comments



Updated E

AS (L =1mH)

= 554mJ

on page 2



Updated note 9

“Limited by T

Jmax

, starting T

= 25°C, L = 1mH, R

= 50



, I

= 33A, V

=10V”. on

page 2



Updated package outline on page 9,10,11,12.

10/07/14

IR WORLD HEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit

http://www.irf.com/whoto-call/