Infineon-Technologies-IRFB7545PBF
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Strong
IR
FET™
IRFB7545PbF
HEXFET
®
Power MOSFET
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
V
DSS
60V
R
DS(on)
typ.
4.9m
5.9m
95A
max
I
D
Benefits
S
D
Improved gate,
avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
G
TO-220AB
G
D
S
Gate
Drain
Source
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRFB7545PbF
TO-220
Tube
50
IRFB7545PbF
100
80
60
40
20
0
14
12
10
8
I
= 57A
D
T
= 125°C
J
6
4
T
= 25°C
J
2
25
50
75
100
125
150
175
4
6
8
10 12 14 16 18 20
T
, Case Temperature (°C)
C
V
Gate -to -Source Voltage
(V)
GS,
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
© 2014 International Rectifier
November 5, 2014
IRFB7545PbF
Absolute Maximum Rating
Symbol
Parameter
Max.
95
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
67
A
I
DM
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
380
125
P
D
@T
C
= 25°C
W
W/°C
V
0.83
± 20
V
GS
Gate-to-Source Voltage
T
J
T
STG
Operating Junction and
Storage Temperature Range
-55 to
+ 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
Symbol
E
AS (Thermally limited)
E
AS (Thermally limited)
I
AR
Max.
140
235
Units
mJ
Parameter
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
A
mJ
See Fig 15, 16, 23a, 23b
E
AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Typ.
–––
0.50
–––
Max.
1.21
–––
62
Units
Junction-to-Case
R
JC
R
CS
R
JA
Case-to-Sink, Flat Greased Surface
°C/W
Junction-to-Ambient
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ.
Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
60
––– –––
V
V
GS
= 0V, I
D
= 250µA
–––
–––
–––
2.1 –––
––– –––
––– ––– 150
––– ––– 100
––– –––
-100
46
4.9
6.3
––– mV/°C
Reference to 25°C, I
D
= 1mA
V
(BR)DSS
/
T
J
R
DS(on)
5.9
–––
3.7
1.0
V
GS
= 10V, I
D
= 57A
m
V
V
GS
= 6.0V, I
D
= 29A
V
DS
= V
GS
, I
D
= 100µA
V
GS(th)
I
DSS
Gate Threshold Voltage
V
DS
= 60V, V
GS
= 0V
Drain-to-Source Leakage Current
µA
V
DS
= 60V,V
GS
= 0V,T
J
=125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
V
V
GS
= 20V
GS
= -20V
I
GSS
R
G
nA
–––
2.3
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 88µH, R
G
= 50
, I
AS
= 57A, V
GS
=10V.
I
SD
57A, di/dt
810A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50
, I
AS
= 22A, V
GS
=10V.
2
© 2014 International Rectifier
November 5, 2014
IRFB7545PbF
Dynamic Electrical
Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min.
90
Typ. Max.
Units
Conditions
–––
75
19
24
32
12
72
–––
110
–––
–––
–––
–––
–––
S
V
DS
= 25V, I
D
= 57A
Q
g
–––
–––
–––
–––
–––
–––
I
D
= 57A
Q
gs
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
V
DS
= 30V
V
GS
= 10V
nC
Q
gd
Q
sync
t
d(on)
t
r
V
DD
= 30V
I
D
= 57A
Rise Time
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
44
43
–––
–––
–––
–––
–––
R
G
= 2.7
V
GS
= 10V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4010
370
230
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz,
See Fig.7
pF
Effective Output Capacitance
(Energy Related)
C
oss eff.(ER)
C
oss eff.(TR)
–––
–––
370
470
–––
–––
V
GS
= 0V, VDS = 0V to 48V
V
GS
= 0V, VDS = 0V to 48V
Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Min.
Typ. Max.
Units
Conditions
MOSFET symbol
D
Continuous Source Current
(Body Diode)
I
S
–––
–––
95
showing the
A
G
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
I
SM
–––
–––
–––
–––
380
1.2
S
V
SD
Diode Forward Voltage
V
T
J
= 25°C,I
S
= 57A,V
GS
= 0V
dv/dt
Peak Diode Recovery dv/dt
–––
–––
–––
–––
–––
–––
12
33
37
36
48
2.0
––– V/ns
T
J
= 175°C,I
S
= 57A,V
DS
= 60V
–––
–––
–––
–––
–––
T
J
= 25°C
V
DD
= 51V
I
F
= 57A,
t
rr
Reverse Recovery Time
ns
T
J
= 125°C
T
J
= 25°C
di/dt = 100A/µs
Q
rr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
T
J
= 125°C
T
J
= 25°C
I
RRM
3
© 2014 International Rectifier
November 5, 2014
IRFB7545PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
1
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 175°C
0.1
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4.
Typical Output Characteristics
Fig 3.
Typical Output Characteristics
1000
2.4
2.0
1.6
1.2
0.8
0.4
I
= 57A
D
V
= 10V
GS
100
10
1
T =
175°C
J
T =
25°C
J
V
= 25V
DS
60µs PULSE WIDTH
0.1
2.0
3.0
V
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0 20
40 60 80
100120140160180
, Gate-to-Source Voltage (V)
T ,
Junction Temperature (°C)
J
GS
Fig 5.
Typical Transfer Characteristics
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
100000
10000
1000
V
= 0V,
f = 1 MHZ
GS
I
= 57A
D
C
C
C
= C
+ C
, C
SHORTED
iss
gs
gd
ds
12.0
10.0
8.0
= C
V
V
V
= 48V
DS
= 30V
DS
= 12V
DS
rss
oss
gd
= C
+ C
ds
gd
C
iss
6.0
C
oss
4.0
C
rss
2.0
0.0
100
0
10 20 30 40 50 60 70 80 90
100
1
10
100
Q ,
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 8.
Typical Gate Charge vs.
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
Gate-to-Source Voltage
4
© 2014 International Rectifier
November 5, 2014
IRFB7545PbF
1000
100
10
100µsec
1msec
100
10
1
T =
175°C
J
OPERATION
IN THIS
AREA
T =
25°C
J
LIMITED BY
R
(on)
10msec
DC
DS
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
1.0
0.1
1
10
0.2
0.6
1.0
1.4
1.8
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
DS
Fig 9.
Typical Source-Drain Diode Forward Voltage
Fig 10.
Maximum Safe Operating Area
0.6
0.5
0.4
0.3
0.2
0.1
0.0
80
Id = 1.0mA
78
76
74
72
70
68
66
-10
0
10
20
30
40
50
60
-60 -40 -20
0
20 40 60 80
100120140160180
, Temperature ( °C )
T
J
V
Drain-to-Source Voltage (V)
DS,
Fig 11.
Drain-to-Source Breakdown Voltage
Fig 12.
Typical C
oss
Stored Energy
16
Vgs = 5.5V
14
12
10
8
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
6
4
0
40
80
120
160
200
I
, Drain Current (A)
D
Fig 13.
Typical On-Resistance vs. Drain Current
5
November 5, 2014
IRFB7545PbF
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 14.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
1
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 15.
Avalanche Current vs. Pulse Width
150
125
100
75
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
TOP
BOTTOM 1.0%
Duty Cycle
= 57A
Single Pulse
I
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
50
6. I
av
= Allowable avalanche current.
25
7.
T = Allowable rise in junction temperature, not to exceed T
jmax
(assumed as 25°C in Figure 15, 16).
0
t
av
= Average time in avalanche.
D = Duty cycle in avalanche =
tav ·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·I
av
) =
T/ Z
thJC
I
av
= 2
T/ [1.3·BV·Z
th
]
Fig 16.
Maximum Avalanche Energy vs. Temperature
E
AS (AR)
= P
D (ave)· av
t
6
© 2014 International Rectifier
November 5, 2014
IRFB7545PbF
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
12
10
8
I =
38A
F
V
= 51V
R
T =
25°C
J
T =
125°C
J
6
I
= 100µA
= 250µA
= 1.0mA
= 1.0A
D
I
D
I
4
D
I
D
2
0
-75 -50 -25
0
25 50 75
100 125 150 175
0
200
400
600
800
1000
T ,
Temperature ( °C )
di /dt
(A/µs)
J
F
Fig 17.
Threshold Voltage vs. Temperature
Fig 18.
Typical Recovery Current vs. dif/dt
200
12
I =
38A
I =
57A
F
F
V
= 51V
V
= 51V
R
R
10
8
T =
25°C
J
T =
125°C
J
T =
25°C
J
T =
125°C
J
150
100
50
6
4
2
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt
(A/µs)
di /dt
(A/µs)
F
F
Fig 19.
Typical Recovery Current vs. dif/dt
Fig 20.
Typical Stored Charge vs. dif/dt
200
I =
57A
F
V
= 51V
R
T =
25°C
J
T =
125°C
J
150
100
50
0
0
200
400
600
800
1000
di /dt
(A/µs)
F
Fig 21.
Typical Stored Charge vs. dif/dt
7
November 5, 2014
IRFB7545PbF
Fig 22.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
20V
0.01
t
p
I
AS
Fig 23a.
Unclamped Inductive Test Circuit
Fig 23b.
Unclamped Inductive Waveforms
Fig 24a.
Switching Time Test Circuit
Fig 24b.
Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b.
Gate Charge Waveform
Fig 25a.
Gate Charge Test Circuit
8
© 2014 International Rectifier
November 5, 2014
IRFB7545PbF
TO-220AB Package Outline
(Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
E X A M
P L E :
T H
I
S IS A
N IR
F 1 0 1 0
L O
C O D E
1 7 8 9
A S S E M
B L E D
IN T
H E
A S S E M
B L Y
L IN E
“C ”
P A R T
N U M B E R
D A T E
C O D E
T
IN T
E R N A T IO N A L
R E C T
I
F IE R
L O
G O
O
N
W
W
1 9 ,
2 0 0 0
Y E A R
E E K
1 9
L
I
N E
0
=
2 0 0 0
N o t
e :
“
P “
in a
s s e m
b ly
lin e
p o s it
io n
in d ic a t
e s
“L e a d
F r
e e ”
A S S E M
B L Y
W
–
L O
T C
O D E
C
TO-220AB packages are not recommended for Surface Mount Application
.
9
© 2014 International Rectifier
November 5, 2014
IRFB7545PbF
Qualification Information
†
Qualification Level
Industrial
(per JEDEC JESD47F)
††
TO-220
N/A
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com/product-info/reliability/
†† Applicable
version of JEDEC standard at the time of product release.
Revision History
Date
Comment
Updated E
AS (L =1mH)
= 235mJ
on page 2
Updated note 8
“Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50
, I
AS
= 22A, V
GS
=10V”. on
page 2
Updated package outline on page 9
11/5/2014
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
10
© 2014 International Rectifier
November 5, 2014
IMPORTANT NOTICE
T
h
e information given in this document shall in no
For further information on the product, technology,
event be regarded as a guarantee of conditions or
delivery terms and conditions and prices please
characteristics (“
B
e
schaffenheitsgarantie”) .
contact your nearest
I
n
fineon
T
e
chnologies office
W
i
t
h respect to any e
x
a
mples, hints or any typical
v
a
lues stated herein and/or any information
regarding the application of the product,
I
n
fineon
T
e
chnologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
D
u
e to technical requirements products may
contain dangerous substances.
F
o
r information on
the types in question please contact your nearest
I
n
fineon
T
e
chnologies office.
In
a
ddition, any information given in this document
is subject to customer
’
s
c
ompliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer
’
s
p
roducts and any
use of the product of
I
n
fineon
T
e
chnologies in
customer
’
s
a
pplications.
Exc
e
pt as otherwise explicitly approved by
I
n
fineon
T
e
chnologies in a written document signed by
authorized
representatives
of
I
n
fineon
T
e
chnologies,
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n
fineon
T
e
chnologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be e
x
p
ected to result in personal
injury.
T
h
e data contained in this document is exclusively
intended for technically trained staff.
I
t is
t
he
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’
s
t
echnical departments
to evaluate the suitability of the product for the
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respect to such application.
