Infineon-Technologies-IRFB812PBF
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PD -97693
IRFB812PbF
HEXFET
®
Power MOSFET
Applications
•
Zero Voltage Switching SMPS
•
Uninterruptible Power Supplies
•
Motor Control applications
Trr
typ.
V
DSS
R
DS(on)
I
D
typ.
500V
75ns 3.6A
1.75
Ω
Features and Benefits
•
Fast body diode eliminates the need for external
diodes in ZVS applications.
•
Lower Gate charge results in simpler drive requirements.
•
Higher Gate voltage threshold offers improved noise
immunity
.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
3.6
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
2.3
A
Pulsed Drain Current
I
DM
14.4
78
P
D
@T
C
= 25°C
Power Dissipation
Linear Derating Factor
W
W/°C
V
0.63
± 20
V
GS
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
dv/dt
T
J
32
V/ns
-55 to
+ 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or
M3 screw
°C
300 (1.6mm from case )
10lb in (1.1N m)
Diode Characteristics
Symbol
Parameter
Continuous Source Current
Min. Typ. Max. Units
––– –––
3.6
Conditions
MOSFET symbol
D
I
I
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
––– ––– 14.4
SM
S
(Body Diode)
p-n junction diode.
T =
25°C, I
= 3.6A, V
= 0V
V
Diode Forward Voltage
Reverse Recovery Time
––– –––
1.2
––– 75 110
V
SD
J
S
GS
t
ns T
= 25°C, I
= 3.6A
J F
rr
––– 94 140
T
J
= 125°C, di/dt = 100A/
μ
s
Q
T =
25°C, I
= 3.6A, V
= 0V
Reverse Recovery Charge
––– 135 200
nC
rr
J
S
GS
––– 220 330
T
J
= 125°C, di/dt = 100A/
μ
s
I
RRM
T =
25°C
J
Reverse Recovery Current
Forward Turn-On Time
––– 3.2
4.8
A
t
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes
through
are on page 2
1
6/23/11
IRFB812PbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Parameter
Min. Typ. Max.
Units
Conditions
V
GS
= 0V, I
D
= 250
μ
A
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
500
–––
–––
3.0
–––
0.37
1.75
–––
–––
–––
–––
–––
V
Δ
Δ
V
(BR)DSS
/ T
J
––– V/°C
Reference to 25°C, I
D
= 250
μ
A
R
DS(on)
V
GS(th)
I
DSS
2.2
5.0
25
V
GS
= 10V, I
D
= 2.2A
Ω
V
V
DS
= V
GS
, I
D
= 250
μ
A
Drain-to-Source Leakage Current
–––
–––
–––
–––
μ
A V
DS
= 500V, V
GS
= 0V
mA V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
2.0
100
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– -100
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max.
Units
Conditions
V
DS
= 50V, I
D
= 2.2A
gfs
Q
g
7.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
–––
S
20
I
D
= 3.6A
Q
gs
Q
gd
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
7.3
nC V
DS
= 400V
V
GS
= 10V, See Fig.14a &14b
7.1
t
d(on)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DD
= 250V
ns I
D
= 3.6A
R
G
= 17
Ω
t
r
22
t
d(off)
Turn-Off Delay Time
Fall Time
24
t
f
17
V
GS
= 10V, See Fig. 15a & 15b
C
iss
Input Capacitance
810
47
V
GS
= 0V
C
oss
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
V
DS
= 25V
C
rss
7.3
610
16
ƒ = 1.0MHz, See Fig. 5
pF V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 400V, ƒ = 1.0MHz
C
oss
C
oss
C
oss
eff.
C
oss
eff. (ER)
5.9
37
V
GS
= 0V,V
DS
= 0V to 400V
Avalanche Characteristics
Symbol
Parameter
Typ.
–––
–––
–––
Max.
150
1.8
Units
Single Pulse Avalanche Energy
E
AS
I
AR
mJ
A
Avalanche Current
Repetitive Avalanche Energy
E
AR
7.8
mJ
Thermal Resistance
Symbol
Parameter
Typ.
–––
0.5
Max.
1.6
Units
Junction-to-Case
R
θ
JC
R
θ
CS
R
θ
JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
62
°C/W
–––
Notes:
Pulse width
≤
300
μ
s; duty cycle
≤
2%.
ꢀ
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
C
oss
eff.(ER) is a fixed capacitance that stores the same energy
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
R
θ
is measured at T
J
approximately 90°C
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Starting T
J
= 25°C, L = 93mH, R
G
= 25
Ω
,
I
AS
= 1.8A. (See Figure 13).
I
SD
=
3.6A, di/dt
≤
520A/
μ
s, V
DD
V
(BR)DSS
T
J
≤
150°C.
.
.
,
2
IRFB812PbF
100
10
100
10
1
VGS
15V
10V
6.2V
5.9V
5.8V
5.6V
5.5V
5.3V
VGS
15V
10V
6.2V
5.9V
5.8V
5.6V
5.5V
5.3V
TOP
TOP
BOTTOM
BOTTOM
1
5.3V
0.1
0.01
5.3V
60
μ
s PULSE WIDTH
≤
60
μ
s PULSE WIDTH
Tj = 150°C
≤
Tj = 25°C
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
3.0
100
I
= 3.6A
D
V
= 50V
DS
60
μ
s PULSE WIDTH
V
= 10V
GS
≤
2.5
2.0
1.5
1.0
0.5
0.0
10
1
T
= 150°C
J
T
= 25°C
J
0.1
-60 -40 -20
T
0
20 40 60 80
10
0
1
20 140 160
4
5
6
7
8
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4.
Normalized On-Resistance
Fig 3.
Typical Transfer Characteristics
Vs. Temperature
3
IRFB812PbF
100000
650
600
550
500
V
C
= 0V,
f = 1 MHZ
GS
Id = 250uA
= C
+ C
, C
SHORTED
iss
gs
gd ds
C
= C
rss
gd
10000
1000
100
10
C
= C
+ C
oss
ds
gd
C
iss
C
oss
C
rss
1
1
10
100
1000
-60 -40 -20
0
20 40 60 80
100 12
0
1
40 160
, Temperature ( °C )
V
, Drain-to-Source Voltage (V)
T
DS
J
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typ. Breadown Voltage
Drain-to-Source Voltage
vs. Temperature
100
10
1
16
12
8
I =
3.6A
D
V
V
V
= 400V
= 250V
= 100V
DS
DS
DS
T
= 150°C
J
T
= 25°C
4
J
V
= 0V
GS
0
0.1
0
4
8
12
16
0.2
0.4
0.6
0.8
1.0
Q
Total Gate Charge (nC)
G
V
, Source-to-Drain Voltage (V)
SD
4
IRFB812PbF
3.0
2.5
2.0
1.5
4
3
2
1
0
V
= 20V
GS
V
= 10V
GS
25
50
75
100
125
150
0
1
2
3
4
5
6
7
T
, CaseTemperature (°C)
I
, Drain Current (A)
C
D
Fig 9.
Maximum Drain Current Vs.
Fig 9.
Typical Rdson Vs. Drain Current
Case Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRFB812PbF
700
600
500
400
300
200
100
0
I
D
100
TOP
0.4A
0.7A
BOTTOM
1.8A
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
10
1
100
μ
sec
1msec
10msec
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
DC
25
50
75
100
125
150
1
10
100
1000
Starting T
, Junction Temperature (°C)
J
V
, Drain-toSource
Voltage (V)
DS
Fig 13.
Maximum Avalanche Energy
Fig 12.
Maximum Safe Operating Area
vs. Drain Current
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
20V
Ω
0.01
t
p
I
AS
Fig 13b.
Unclamped Inductive Waveforms
Fig 13a.
Unclamped Inductive Test Circuit
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 14b.
Gate Charge Waveform
Fig 14a.
Gate Charge Test Circuit
6
IRFB812PbF
R
D
V
DS
V
DS
90%
V
GS
D.U.T.
R
G
+
V
DD
–
10%
V
GS
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
t
d(on)
t
d(off)
t
r
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
Driver Gate Drive
P
.
W.
Period
D =
D.U.T
Period
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/dt controlled by R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 16.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
7
IRFB812PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
E
X
AM
P
LE: THIS
IS
A
N
I
RF1010
P
A
R
T NU
M
B
ER
L
O
T CODE 1789
IN
T
ER
N
A
T
I
O
N
A
L
RE
C
T
IFIER
L
O
GO
A
S
SE
M
B
LED
O
N WW 19, 2000
IN THE
A
S
SE
M
B
LY LI
N
E “
C
”
DAT E
CODE
Y
E
A
R 0 =
2
000
W
E
EK
1
9
Note: “
P
” in
a
s
s
e
mb
l
y
l
in
e
p
o
s
i
t
i
o
n
i
n
d
i
c
a
t
e
s
“
L
e
ad – F
r
e
e”
A
S
SE
M
B
LY
L
O
T CODE
LINE C
TO-220AB packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
8
