Infineon-Technologies-IRFH3702TRPBF
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PD – 97368A
IRFH3702PbF
HEXFET
®
Power MOSFET
Applications
l
Synchronous Buck Converter for Computer
Processor Power
V
DSS
30V
R
DS(on)
max
Qg
l
Isolated DC to DC Converters for Network and
Telecom
7.1m @V
= 10V
Ω
9.6nC
GS
l
Buck Converters for Set-Top Boxes
Benefits
S
S
l
l
l
l
Low R
DS(ON)
Very Low Gate Charge
Low Junction to PCB Thermal Resistance
Fully Characterized Avalanche Voltage and
Current
D
D
D
D
S
G
l
l
l
100% Tested for R
G
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
3mm x 3mm PQFN
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
Units
V
DS
30
± 20
16
V
V
Gate-to-Source Voltage
GS
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
I
I
I
@ T
A
= 25°C
D
D
D
@ T
A
= 70°C
@ T
C
= 25°C
12
42
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
25
I
120
2.8
1.8
DM
P
D
P
D
@T
A
= 25°C
@T
A
= 70°C
Power Dissipation
W
Power Dissipation
Linear Derating Factor
0.02
-55 to
+ 150
W/°C
°C
T
J
Operating Junction and
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
Max.
6.0
45
Units
R
θ
JC
–––
–––
–––
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (t<10s)
R
θ
JA
R
θ
JA
°C/W
44
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes
through
are on page 10
1
09/21/10
IRFH3702PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max.
Units
Conditions
V
GS
= 0V, I
D
= 250µA
BV
DSS
∆Β
R
DS(on)
30
–––
0.02
5.7
–––
V
∆
V
DSS
/ T
J
Breakdown Voltage Temp. Coefficient
–––
––– V/°C
Reference to 25°C, I
D
= 1mA
Static Drain-to-Source On-Resistance
–––
–––
1.35
–––
–––
–––
–––
–––
37
7.1
V
GS
= 10V, I
D
= 16A
V
GS
= 4.5V, I
D
= 12A
Ω
m
8.7
11.8
2.35
V
GS(th)
Gate Threshold Voltage
1.8
V
V
DS
= V
GS
, I
D
= 25µA
∆
V
GS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
-6.5
–––
–––
–––
––– mV/°C
I
DSS
1.0
µA
V
DS
= 24V, V
GS
= 0V
150
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
V
V
V
GS
= 20V
––– -100
GS
= -20V
gfs
Q
g
–––
9.6
2.4
1.2
3.1
2.9
4.3
7.4
–––
14
S
DS
= 15V, I
D
= 12A
–––
–––
–––
–––
–––
–––
–––
Q
gs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
–––
–––
–––
–––
V
DS
= 15V
Q
gs2
Q
gd
V
GS
= 4.5V
I
D
= 12A
nC
Q
godr
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
See Fig.17 & 18
Q
sw
Q
oss
Output Charge
nC V
DS
= 16V, V
GS
= 0V
R
G
t
d(on)
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
2.2
9.6
15
Ω
–––
–––
V
DD
= 15V, V
GS
= 4.5V
t
r
–––
–––
–––
I
D
= 12A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
11
R
G
=1.8
Ω
See Fig.15
5.8
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1510 –––
V
V
GS
= 0V
–––
–––
306
120
–––
–––
DS
= 15V
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
E
AS
77
12
Single Pulse Avalanche Energy
I
AR
A
Avalanche Current
Diode Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
D
I
S
Continuous Source Current
MOSFET symbol
–––
–––
3.5
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
I
SM
–––
–––
120
S
(Body Diode)
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
–––
–––
–––
–––
17
1.0
26
23
V
T =
25°C, I
= 12A, V
= 0V
GS
J
S
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T
= 25°C, I
= 12A, V
DD
= 15V
J F
Q
rr
t
on
di/dt = 225A/µs
15
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
IRFH3702PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
≤
≤
TOP
TOP
5.0V
4.5V
3.5V
3.3V
3.1V
2.9V
2.7V
5.0V
4.5V
3.5V
3.3V
3.1V
2.9V
2.7V
BOTTOM
BOTTOM
2.7V
2.7V
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
1000
2.0
1.5
1.0
0.5
I
= 16A
D
V
= 10V
GS
100
10
1
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
≤
60µs PULSE WIDTH
0.1
1
2
3
4
5
-60 -40 -20
0
20 40 60 80
100 12
0
1
40 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4.
Normalized On-Resistance
Fig 3.
Typical Transfer Characteristics
vs
.
T
emperature
3
IRFH3702PbF
100000
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I =
12A
D
C
C
C
+ C
, C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
= C
+ C
ds
gd
V
= 24V
= 15V
DS
DS
V
10000
1000
100
6.0
C
iss
4.0
C
oss
2.0
C
rss
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
V
Q ,
Total Gate Charge (nC)
DS
G
Fig 6.
Typical Gate Charge vs.
Fig 5.
Typical Capacitance vs.
Gate-to-Sourc
e
V
oltage
Drain-to-Sourc
e
V
oltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
100µsec
10msec
T
= 150°C
J
T
= 25°C
1msec
J
1
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.2
0.4
SD
0.6
0.8
1.0
1.2
0
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRFH3702PbF
16
14
12
10
8
2.5
2.0
1.5
1.0
0.5
I
= 25µA
D
6
4
2
0
25
50
75
100
125
150
-75 -50 -25
0
25 50 75
100 125 150
T ,
Temperature ( °C )
J
T
, Ambient Temperature (°C)
A
Fig 9.
Maximum Drain Current vs.
Fig 10.
Threshold Voltage Vs. Temperature
Ambien
t
T
emperature
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRFH3702PbF
20
18
16
14
12
10
8
350
300
250
200
150
100
50
I
= 16A
I
D
D
TOP
1.7A
2.6A
BOTTOM 12A
T
= 125°C
J
T
= 25°C
J
6
4
0
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
J
V
Gate -to -Source Voltage
(V)
GS,
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy
vs. Drain Current
R
D
V
DS
15V
V
GS
D.U.T.
R
G
DRIVER
+
L
+
V
DD
V
DS
–
V
GS
Puls
e
W
idth
≤ 1
µs
Dut
y
F
acto
r
≤ 0.1
D.U.T
AS
R
G
V
DD
–
I
A
20V
Ω
0.01
t
p
Fig 15a.
Switching Time Test Circuit
Fig 14a.
Unclamped Inductive Test Circuit
V
(BR)DSS
V
DS
t
p
90%
10%
V
GS
t
d(on)
t
d(off)
t
r
t
f
I
AS
Fig 15b.
Switching Time Waveforms
Fig 14b.
Unclamped Inductive Waveforms
6
IRFH3702PbF
Driver Gate Drive
P.W.
P
.
W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circui
t
L
ayou
t
C
onsiderations
•
Lo
w
S
tra
y
I
nductance
•
Ground Plane
•
Lo
w
L
eakag
e
I
nductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/d
t
c
ontrolle
d
b
y
R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 16.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
Current Regulator
Id
Vds
Same Type as D.U.
T
.
Vgs
50K
Ω
.2
µ
F
.3
µ
F
12V
+
V
DS
D.U.
T
.
–
Vgs(th)
Qgs1
V
GS
3mA
I
I
Qgs2
Qgd
Qgodr
G
D
Current Sampling Resistors
Fig 18.
Gate Charge Waveform
Fig 17.
Gate Charge Test Circuit
7
IRFH3702PbF
PQFN Package Details
8
IRFH3702PbF
PQFN Part Marking
PQFN Tape and Reel
9
IRFH3702PbF
Orderable part number
Package Type
PQFN 3mm x 3mm
Standard Pack
Note
Form
Tape and Reel
Quantity
IRFH3702TRPBF
4000
Qualification information
†
Cons ume
r
††
(
p
er
J
E
D
E
C
J
E
S
D
47F
†††
g
u
i
d
e
l
in
e
s )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 3mm x 3mm
(
p
er
I
P
C
/
J
E
D
E
C J-S T D-020D
†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 1.0mH, R
G
= 25
Ω
, I
AS
= 12A.
Pulse width
≤
400µs; duty cycle
≤
2%.
Rthjc is guaranteed by design.
ꢀ
When mounted on 1 inch square
2 oz copper pad on 1.5×1.5 in. board of FR-4 material.
Refer to
application note #AN-994.
Data and specifications subject to change without notice
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
10
