Infineon-Technologies-IRFH3707TRPBF
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PD – 96227B
IRFH3707PbF
HEXFET
®
Power MOSFET
Applications
l
Synchronous Buck Converter for Computer
Processor Power
l
Isolated DC to DC Converters for Network and
Telecom
l
Buck Converters for Set-Top Boxes
V
DSS
30V
R
DS(on)
max
Qg
12.4m @V
GS
= 10V
5.4nC
l
System/load switch
Benefits
S
S
l
l
l
l
Low R
DS(ON)
Very Low Gate Charge
Low Junction to PCB Thermal Resistance
Fully Characterized Avalanche Voltage and
Current
D
D
D
D
S
G
l
l
l
100% Tested for R
G
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
3mm x 3mm PQFN
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
Units
V
DS
30
± 20
12
V
V
Gate-to-Source Voltage
GS
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
I
I
I
@ T
A
= 25°C
D
D
D
@ T
A
= 70°C
@ T
C
= 25°C
9.4
29
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
18
I
96
DM
Power Dissipation
Power Dissipation
P
P
@T
A
= 25°C
@T
A
= 70°C
2.8
1.8
D
D
W
Linear Derating Factor
Operating Junction and
0.02
-55 to
+ 150
W/°C
°C
T
J
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
7.5
45
Units
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (t<10s)
R
θ
JC
R
θ
JA
R
θ
JA
–––
–––
–––
°C/W
31
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes
through
are on page 10
1
09/17/10
IRFH3707PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max.
Units
Conditions
V
GS
= 0V, I
D
= 250µA
BV
DSS
∆Β
R
DS(on)
30
–––
0.02
9.4
–––
V
∆
V
DSS
/ T
J
Breakdown Voltage Temp. Coefficient
–––
––– V/°C
Reference to 25°C, I
D
= 1mA
12.4
GS
= 10V, I
D
= 12A
Static Drain-to-Source On-Resistance
–––
–––
1.35
–––
–––
–––
–––
–––
17
V
Ω
m
14.5 17.9
V
GS
= 4.5V, I
D
= 9.4A
V
GS(th)
Gate Threshold Voltage
1.8
-6.2
–––
–––
–––
2.35
V
V
DS
= V
GS
, I
D
= 25µA
∆
V
GS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
I
DSS
1.0
µA
V
V
V
V
DS
= 24V, V
GS
= 0V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
GS
= 20V
150
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
––– -100
GS
= -20V
gfs
Q
g
–––
5.4
1.1
0.7
2.2
1.5
2.9
3.8
–––
8.1
S
V
DS
= 15V, I
D
= 9.4A
–––
–––
–––
–––
–––
–––
–––
Q
gs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
–––
–––
–––
–––
V
DS
= 15V
Q
gs2
Q
gd
V
GS
= 4.5V
I
D
= 9.4A
nC
Q
godr
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
See Fig.17 & 18
Q
sw
Q
oss
Output Charge
nC V
DS
= 16V, V
GS
= 0V
R
G
t
d(on)
t
r
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
–––
2.0
9.0
11
Ω
–––
–––
V
DD
= 15V, V
GS
= 4.5V
–––
–––
–––
–––
–––
–––
I
D
= 9.4A
ns
t
d(off)
t
f
Ω
R
G
=1.3
See Fig.15
V
GS
= 0V
Turn-Off Delay Time
Fall Time
9.9
5.6
755
171
83
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 15V
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
13
Units
mJ
Single Pulse Avalanche Energy
E
AS
I
AR
Avalanche Current
9.4
A
Diode Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
D
I
S
Continuous Source Current
MOSFET symbol
–––
–––
3.5
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
I
SM
–––
–––
96
S
(Body Diode)
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
–––
–––
–––
–––
20
1.0
30
41
V
T =
25°C, I
= 9.4A, V
= 0V
J S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T
= 25°C, I
= 9.4A, V
DD
= 15V
J F
Q
rr
t
on
di/dt = 200A/µs
27
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
IRFH3707PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
BOTTOM
BOTTOM
1
2.7V
2.7V
60µs PULSE WIDTH
Tj = 150°C
10
, Drain-to-Source Voltage (V)
≤
60µs PULSE WIDT
Tj = 25°C
≤
0.1
1
0.1
1
10
100
0.1
1
100
V
, Drain-to-Source Voltage (V)
V
DS
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 12A
D
V
= 10V
GS
10
1
T
= 25°C
J
T =
150°C
J
V
= 15V
DS
≤
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
-60 -40 -20
0
20 40 60 80
100 12
0
1
40 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4.
Normalized On-Resistance
Fig 3.
Typical Transfer Characteristics
Vs. Temperature
3
IRFH3707PbF
14.0
12.0
10.0
8.0
10000
V
= 0V,
= C
f = 1 MHZ
GS
I =
9.4A
D
C
C
C
+ C
, C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
V
V
= 24V
= 15V
DS
DS
= C
+ C
ds
gd
1000
100
10
C
iss
C
oss
6.0
C
rss
4.0
2.0
0.0
0
2
4
6
8
10 12 14 16
1
10
, Drain-to-Source Voltage (V)
100
Q , Total
Gate Charge (nC)
V
G
DS
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
100µsec
T
= 150°C
J
T
= 25°C
1msec
J
1
10msec
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.2
0.4
V
0.6
0.8
1
1.2
1.4
1.6
0
1
10
100
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRFH3707PbF
12
10
8
2.5
2.0
1.5
1.0
0.5
I
= 25µA
D
6
4
2
0
25
50
75
100
125
150
-75 -50 -25
0
25 50 75
100 125 150
T
, Ambient Temperature (°C)
T ,
Temperature ( °C )
A
J
Fig 9.
Maximum Drain Current Vs.
Fig 10.
Threshold Voltage Vs. Temperature
Ambient Temperature
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRFH3707PbF
35
30
25
20
60
50
40
30
20
10
0
I
D
I
= 12A
D
TOP
2.95A
3.63A
BOTTOM 9.40A
T
= 125°C
= 25°C
J
15
10
5
T
J
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
V
Gate -to -Source Voltage
(V)
J
GS,
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy
vs. Drain Current
R
D
V
DS
15V
V
GS
D.U.T.
R
G
DRIVER
+
L
+
V
DD
V
DS
–
V
GS
Puls
e
W
idth
≤ 1
µs
Dut
y
F
acto
r
≤ 0.1
D.U.T
AS
R
G
V
DD
–
I
A
20V
Ω
0.01
t
p
Fig 15a.
Switching Time Test Circuit
Fig 14a.
Unclamped Inductive Test Circuit
V
(BR)DSS
V
DS
t
p
90%
10%
V
GS
t
d(on)
t
d(off)
t
r
t
f
I
AS
Fig 15b.
Switching Time Waveforms
Fig 14b.
Unclamped Inductive Waveforms
6
IRFH3707PbF
Driver Gate Drive
P.W.
P
.
W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circui
t
L
ayou
t
C
onsiderations
•
Lo
w
S
tra
y
I
nductance
•
Ground Plane
•
Lo
w
L
eakag
e
I
nductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/d
t
c
ontrolle
d
b
y
R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 16.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
Current Regulator
Id
Vds
Same Type as D.U.
T
.
Vgs
50K
Ω
.2
µ
F
.3
µ
F
12V
+
V
DS
D.U.
T
.
–
Vgs(th)
Qgs1
V
GS
3mA
I
I
Qgs2
Qgd
Qgodr
G
D
Current Sampling Resistors
Fig 18.
Gate Charge Waveform
Fig 17.
Gate Charge Test Circuit
7
IRFH3707PbF
PQFN Package Details
8
IRFH3707PbF
PQFN Part Marking
PQFN Tape and Reel
9
IRFH3707PbF
Orderable part number
Package Type
PQFN 3mm x 3mm
Standard Pack
Note
Form
Tape and Reel
Quantity
IRFH3707TRPBF
4000
Qualification information
†
Cons ume
r
††
(
p
er
J
E
D
E
C
J
E
S
D
47F
†††
g
u
i
d
e
l
in
e
s )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 3mm x 3mm
(
p
er
I
P
C
/
J
E
D
E
C J-S T D-020D
†††
)
Yes
†
Qualification standards can be found at International Rectifier’s web site
††
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
†††
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.297mH, R
G
= 25
Ω
, I
AS
= 9.4A.
Pulse width
≤
400µs; duty cycle
≤
2%.
Rthjc is guaranteed by design.
ꢀ
When mounted on 1 inch square
2 oz copper pad on 1.5×1.5 in. board of FR-4 material.
Refer to
application note #AN-994.
Data and specifications subject to change without notice
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
10
