Infineon-Technologies-IRFH4251DTRPBF
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Fast
IR
FET™
IRFH4251DPbF
HEXFET
®
Power MOSFET
Q1
25
Q2
25
V
DSS
V
R
DS(on)
max
(@V
GS
= 4.5V)
4.60
10
1.10
44
m
nC
Qg
(typical)
I
D
45
45
A
(@T
C
= 25°C)
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
DUAL PQFN 5X6 mm
Benefits
Features
Control and synchronous MOSFETs in one package
Increased power density
Lower switching losses
Lower conduction losses
Lower Switching Losses
Environmentally friendlier
Increased reliability
Low charge control MOSFET (10nC typical)
results in
Low R
DSON
synchronous MOSFET (<1.10m
)
Intrinsic Schottky Diode with Low Forward Voltage on Q2
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Base part number
Package Type
Standard Pack
Orderable Part Number
IRFH4251DTRPbF
Form
Quantity
4000
IRFH4251DPbF
Dual PQFN 5mm x 6mm
Tape and Reel
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Q1 Max.
Q2 Max.
Units
V
GS
± 20
V
A
I
D
@ T
C
= 25°C
64
51
188
151
I
D
@ T
C
= 70°C
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 4.5V
(Source Bonding Technology Limited)
45
45
I
DM
Pulsed Drain Current
Power Dissipation
Power Dissipation
120
31
750
63
P
D
@T
C
= 25°C
P
D
@T
C
= 70°C
W
20
40
Linear Derating Factor
0.25
0.50
W/°C
°C
T
J
Operating Junction and
Storage Temperature Range
-55 to
+ 150
T
STG
Thermal Resistance
Parameter
Q1 Max.
Q2 Max.
Units
Junction-to-Case
4.0
20
34
24
2.0
12
35
22
R
JC
(Bottom)
R
JC
(Top)
R
JA
°C/W
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
JA
(<10s)
Notes
through
are on page 12
1
© 2014 International Rectifier
May 20, 2014
IRFH4251DPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Units
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 0V, I
D
= 1.0mA
BV
DSS
Drain-to-Source Breakdown Voltage
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
25
25
––– –––
––– –––
V
Breakdown Voltage Temp. Coefficient
–––
–––
22
20
––– mV/°C
Reference to 25°C, I
D
= 1.0mA
BV
DSS
/
T
J
–––
Reference to 25°C, I
D
= 10mA
V
GS
= 10V, I
D
= 30A
––– 2.50
3.20
––– 0.60
0.85
––– 3.70
4.60
––– 0.85
1.10
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS
= 10V, I
D
= 30A
m
V
GS
= 4.5V, I
D
= 30A
GS
= 4.5V, I
D
= 30A
V
V
GS(th)
Gate Threshold Voltage
1.1
1.1
1.6
1.6
2.1
2.1
V
Q1: V
DS
= V
GS
, I
D
= 35µA
Q2: V
DS
= V
GS
, I
D
= 150µA
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– -5.7 –––
mV/°C Q1: V
DS
= V
GS
, I
D
= 35µA
V
GS(th)
/
T
J
I
DSS
I
GSS
gfs
––– -10 –––
––– ––– 1.0
––– ––– 250
Q2: V
DS
= V
GS
, I
D
= 150µA
µA V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Q1/Q2 ––– ––– 100
Q1/Q2 ––– ––– -100
nA V
GS
= 20V
V
V
V
GS
= -20V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
131 ––– –––
161 ––– –––
S
DS
= 10V, I
D
= 30A
DS
= 10V, I
D
= 30A
Q
g
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
44
15
66
Q1
Q
gs1
Q
gs2
Q
gd
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
2.5 –––
11 –––
V
DS
= 13V
GS
= 4.5V, I
D
= 30A
V
1.6 –––
4.2 –––
3.8 –––
nC
Q2
V
DS
= 13V
GS
= 4.5V, I
D
= 30A
15
–––
V
Q
godr
Q
sw
Q
oss
R
G
2.1 –––
––– 13.8 –––
––– 5.4 –––
––– 19.2 –––
–––
–––
–––
10
44
–––
–––
nC V
DS
= 16V, V
GS
= 0V
Gate Resistance
2.4 –––
––– 0.85 –––
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
–––
–––
–––
10
24
61
–––
–––
–––
Q1
V
DS
= 13V V
GS
= 4.5V
I
D
= 30A, Rg = 1.8
ns
––– 105 –––
Q2
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
13
35
15
60
–––
–––
–––
–––
V
DS
= 13V V
GS
= 4.5V
I
D
= 30A, Rg = 1.8
C
iss
Input Capacitance
––– 1314 –––
––– 5845 –––
––– 365 –––
––– 1703 –––
V
GS
= 0V
pF
V
DS
= 13V
C
oss
C
rss
Output Capacitance
Reverse Transfer Capacitance
ƒ = 1.0MHz
–––
92
–––
––– 408 –––
2
© 2014 International Rectifier
May 20, 2014
IRFH4251DPbF
Avalanche Characteristics
Parameter
Typ.
–––
–––
Q1 Max.
61
Q2 Max.
1292
60
Units
mJ
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
30
A
Diode Characteristics
Parameter
Min. Typ.
Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
––– –––
45
––– –––
45
––– ––– 120
––– –––
750
––– ––– 1.0
––– –––
0.75
A
A
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
SM
V
SD
t
rr
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
16
36
13
67
–––
–––
ns Q1
T
J
= 25°C, I
F
= 30A
DD
= 13V, di/dt = 235A/µs
V
Q
rr
––– nC
Q2 T
J
= 25°C, I
F
= 30A
–––
DD
= 13V, di/dt = 190A/µs
V
3
© 2014 International Rectifier
May 20, 2014
IRFH4251DPbF
Q2 – Synchronous FET
Q1 – Control FET
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
BOTTOM
BOTTOM
1
1
2.3V
0.1
0.01
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 25°C
2.5V
0.1
0.1
1
10
100
0.1
1
10
, Drain-to-Source Voltage (V)
DS
100
V
, Drain-to-Source Voltage (V)
V
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
1000
100
10
1000
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
100
10
1
BOTTOM
BOTTOM
2.3V
2.5V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 150°C
Tj = 150°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 3.
Typical Output Characteristics
Fig 4.
Typical Output Characteristics
1000
1000
100
10
100
10
1
T
= 150°C
J
T
= 150°C
J
T
= 25°C
J
T
= 25°C
J
1
V
= 15V
V
= 15V
DS
60µs PULSE WIDTH
DS
60µs PULSE WIDTH
0.1
0.1
1.5
2.0
2.5
3.0
3.5
4.0
1.5
2.0
2.5
3.0
3.5
4.0
V
, Gate-to-Source Voltage (V)
GS
V
, Gate-to-Source Voltage (V)
GS
Fig 6.
Typical Transfer Characteristics
Fig 5.
Typical Transfer Characteristics
4
© 2014 International Rectifier
May 20, 2014
IRFH4251DPbF
Q2 – Synchronous FET
Q1 – Control FET
100000
10000
1000
100
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
V
= 0V,
= C
f = 1 MHZ
+ C
, C
GS
GS
C
C
C
+ C
, C
SHORTED
C
C
C
SHORTED
iss
gs
gd
ds
iss
gs
gd
ds
= C
= C
rss
oss
gd
= C
+ C
rss
oss
gd
= C
+ C
ds
gd
ds
gd
C
iss
C
C
iss
oss
C
oss
C
rss
C
rss
10
100
1
10
, Drain-to-Source Voltage (V)
100
1
10
, Drain-to-Source Voltage (V)
100
V
V
DS
DS
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 8.
Typical Capacitance vs. Drain-to-Source Voltage
14.0
14.0
I =
30A
D
I =
30A
D
12.0
12.0
V
V
= 20V
= 13V
DS
DS
V
V
= 20V
= 13V
DS
DS
10.0
8.0
6.0
4.0
2.0
0.0
10.0
8.0
6.0
4.0
2.0
0.0
0
5
10
15
20
25
30
0
20
40
60
80
100
120
Q , Total
Gate Charge (nC)
Q , Total
Gate Charge (nC)
G
G
Fig 10.
Typical Gate Charge vs. Gate-to-Source Voltage
Fig 9.
Typical Gate Charge vs. Gate-to-Source Voltage
10000
1000
OPERATION IN THIS AREA
OPERATION IN THIS AREA
LIMITED BY R
(on)
LIMITED BY R
(on)
DS
DS
1000
100
10
100
10
100µsec
100µsec
1msec
Limited by package
Limited by package
1msec
1
1
10msec
10msec
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.01
DC
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 11.
Maximum Safe Operating Area
Fig 12.
Maximum Safe Operating Area
5
© 2014 International Rectifier
May 20, 2014
IRFH4251DPbF
Q2 – Synchronous FET
Q1 – Control FET
1.6
1.4
1.2
1.0
0.8
0.6
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 30A
I
= 30A
D
D
V
= 4.5V
V
= 4.5V
GS
GS
-60 -40 -20
0
20 40 60 80
100 120 140 160
-60 -40 -20
0
20 40 60 80
100 120 140 160
T
J
, Junction Temperature (°C)
T
J
, Junction Temperature (°C)
Fig 14.
Normalized On-Resistance vs. Temperature
1000
Fig 13.
Normalized On-Resistance vs. Temperature
1000
T
= 150°C
J
100
100
10
T
= 150°C
J
T
= 25°C
J
10
T
= 25°C
= 0V
J
V
V
= 0V
GS
GS
1.0
1.0
0.4
0.5
V
0.6
0.7
0.8
0.9
1.0
0.2
0.4
0.6
0.8
1.0
, Source-to-Drain Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
SD
Fig 15.
Typical Source-Drain Diode Forward Voltage
Fig 16.
Typical Source-Drain Diode Forward Voltage
2.0
10
I
= 30A
I
= 30A
D
D
8
6
4
2
0
1.5
1.0
0.5
0.0
T
= 125°C
J
T
= 125°C
J
T
= 25°C
J
T
= 25°C
J
2
4
6
8
10 12 14 16 18 20
2
4
6
8
10 12 14 16 18 20
V
Gate -to -Source Voltage
(V)
V
Gate -to -Source Voltage
(V)
GS,
GS,
Fig 17.
Typical On-Resistance vs. Gate Voltage
Fig 18.
Typical On-Resistance vs. Gate Voltage
6
© 2014 International Rectifier
IRFH4251DPbF
Q2 – Synchronous FET
Q1 – Control FET
70
60
50
40
30
20
10
0
200
160
120
80
Limited By Package
Limited By Package
40
0
25
50
T
75
100
125
150
25
50
T
75
100
125
150
, Case Temperature (°C)
, Case Temperature (°C)
C
C
Fig 20.
Maximum Drain Current vs. Case Temperature
Fig 19.
Maximum Drain Current vs. Case Temperature
2.5
2.2
2.0
1.8
2.0
1.5
I
= 150µA
D
1.6
1.4
1.2
1.0
I
= 35µA
D
1.0
0.5
0.0
-75 -50 -25
0
25 50 75
100 125 150
-75 -50 -25
0
25 50 75
100 125 150
T
, Temperature ( °C )
T
, Temperature ( °C )
J
J
Fig 21.
Threshold Voltage vs. Temperature
Fig 22.
Threshold Voltage vs. Temperature
250
6000
I
I
D
D
TOP
7.7A
12A
TOP
11A
25A
5000
4000
3000
2000
1000
0
200
150
100
50
BOTTOM 30A
BOTTOM 60A
0
25
50
75
100
125
150
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
Starting T
, Junction Temperature (°C)
J
J
Fig 23.
Maximum Avalanche Energy vs. Drain Current
Fig 24.
Maximum Avalanche Energy vs. Drain Current
7
© 2014 International Rectifier
IRFH4251DPbF
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 125°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 25.
Max Avalanche Current vs. Pulse Width (Q1)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 125°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
1.0E-02
1.0E-01
1.0E+00
Fig 26.
Max Avalanche Current vs. Pulse Width (Q2)
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 27.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Q1)
8
May 20, 2014
IRFH4251DPbF
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 28.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Q2)
9
© 2014 International Rectifier
May 20, 2014
IRFH4251DPbF
Fig 29.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
20V
I
0.01
t
p
AS
Fig 30a.
Unclamped Inductive Test Circuit
Fig 30b.
Unclamped Inductive Waveforms
Fig 31a.
Switching Time Test Circuit
Fig 31b.
Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 32a.
Gate Charge Test Circuit
Fig 32b.
Gate Charge Waveform
10
© 2014 International Rectifier
May 20, 2014
IRFH4251DPbF
Dual PQFN 5×6 Outline “H” Package Details
C
D
4
A
INDEX AREA
(D/2xE/2)
D2
PIN#1 ID
B
L1
A1
R0.30
7x L2
8x b
8x K
0.48
D1
1.15
TOP VIEW
SIDE VIEW
D
i
m
ens
i
on Table
V :
V
ery Th
i
n
1.08
0.94
NOTE
BOTTOM VIEW
M
I
N
I
M
UM NOM
I
N
AL
MAX
I
M
UM
A
A1
b
0.80
0.00
0.30
0
.
9
0
0
.
0
2
0.40
1.00
0
.
0
5
0
.
5
0
6
D
E
e
D1
E1
D2
E2
K
6
.
0
0 BSC
5.00 BSC
1.27 BSC
2
.
5
7
4
.
56
0
.
9
3
2
.
4
2
4
.
4
1
0.78
4
.
01
0.20
1.67
2
.
6
7
4
.
66
1.03
4
.
26
—
4
.
16
—
L1
L2
1.77
0
.
5
0
1.87
0
.
6
0
0
.
4
0
For more information on board mounting, including footprint and stencil recommendation, please refer to
For more information on package inspection techniques, please refer to application note AN-1154:
PQFN 5×6 Outline “H” Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode – Min last 4 digits of EATI#)
(Prod Mode – 4 digits of SPN code)
11
© 2014 International Rectifier
May 20, 2014
IRFH4251DPbF
Dual PQFN 5×6 Outline Tape and Reel
Qualification Information
†
Industrial
Qualification level
(per JEDEC JESD47F
††
guidelines )
MSL1
DUAL PQFN 5mm x 6mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D
††)
Yes
†
††
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Starting T
J
= 25°C,
Q1: L = 0.14mH, R
G
= 50
, I
AS
= 30A;
Q2: L = 0.72mH, R
G
= 50
, I
AS
= 60A.
Pulse width
≤
400µs; duty cycle
≤
2%.
R
is measured at T
J
approximately 90°C.
When mounted on 1 inch square
PCB (FR-4). Please refer to AN-994 for more details:
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to Q1 = 45A & Q2 = 45A by source bonding technology.
Pulsed drain current is limited to 180A by source bonding technology.
12
© 2014 International Rectifier
May 20, 2014
IRFH4251DPbF
Revision History
Date
Comments
Updated the schematic drawing, on page 1.
Updated the Features and Benefits table, on page 1.
Updated Vsd for Q2 from 1.0V to 0.75V, on page 3.
Added Tape and Reel drawing, on page 12.
05/28/2013
06/10/2013
08/15/2013
01/16/2014
5/20/2014
Updated the MSL level from MSL3 to MSL2, on pages 1 & 12.
Added “Fast
IR
FET™” above the part number, on page 1.
Added part marking drawing, on page 11.
Update the MSL level from MSL2 to MSL1, on page 1 & 12.
Updated fig. 25 to show the max avalanche plateau at 45A, on page 8.
Corrected fig. 26 to cap the curves at package limitation current of 45A, on page 8.
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
13
© 2014 International Rectifier
May 20, 2014
