Infineon-Technologies-IRFH7914TRPBF
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IRFH7914PbF
HEXFET
®
Power MOSFET
Applications
l
Control MOSFET of Sync-Buck Converters
used for Notebook Processor Power
Control MOSFET for Isolated DC-DC
V
DSS
30V
R
DS(on)
max
Qg
8.7m @V
= 10V
Ω
8.3nC
l
GS
Converters in Networking Systems
Benefits
l
l
l
Very low R
DS(ON)
at 4.5V V
GS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
l
l
l
l
l
100% Tested for R
G
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
PQFN 5X6 mm
Large Source Lead for more reliable Soldering
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
30
Units
V
V
DS
V
Gate-to-Source Voltage
± 20
15
GS
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
I
I
I
@ T
A
= 25°C
D
D
D
@ T
A
= 70°C
@ T
C
= 25°C
12
35
A
110
3.1
2.0
DM
Power Dissipation
P
P
@T
A
= 25°C
@T
A
= 70°C
W
D
D
Power Dissipation
Linear Derating Factor
Operating Junction and
0.025
-55 to
+ 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
Max.
7.2
Units
°C/W
Junction-to-Case
R
θ
JC
R
θ
JA
Junction-to-Ambient
–––
40
Notes
through
ꢀ
are on page 9
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© 2013 International Rectifier
August 16, 2013
1
IRFH7914PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max.
Units
30 –––
–––
Conditions
V
GS
= 0V, I
D
= 250µA
BV
DSS
∆Β
V
∆
V
DSS
/ T
J
Breakdown Voltage Temp. Coefficient
––– 0.022 –––
V/°C Reference
to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
–––
1.35
7.5
11.2
1.8
8.7
13
V
GS
= 10V, I
D
= 14A
V
GS
= 4.5V, I
D
= 11A
Ω
m
V
GS(th)
Gate Threshold Voltage
2.35
V
V
DS
= V
GS
, I
D
= 25µA
∆
V
GS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– -6.08 –––
mV/°C
I
DSS
–––
–––
–––
–––
77
–––
–––
–––
1.0
150
100
V
DS
= 24V, V
GS
= 0V
µA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
GS
= 20V
nA
S
––– -100
V
GS
= -20V
gfs
Q
g
–––
8.3
2.1
1.0
2.8
2.4
3.8
4.8
–––
12
V
V
DS
= 15V, I
D
= 11A
DS
= 15V
–––
–––
–––
–––
–––
–––
–––
Q
gs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
–––
–––
–––
–––
Q
gs2
Q
gd
V
GS
= 4.5V
I
D
= 11A
nC
Q
godr
Gate Charge Overdrive
See Fig.17 & 18
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
Q
oss
Output Charge
nC V
DS
= 16V, V
GS
= 0V
R
G
t
d(on)
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
1.3
11
11
12
4.6
2.2
–––
–––
–––
–––
Ω
V
DD
= 15V, V
GS
= 4.5V
t
r
I
D
= 11A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
=1.8
Ω
See Fig.15
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1160 –––
–––
–––
220
100
–––
–––
V
DS
= 15V
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
E
AS
I
AR
17
11
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
I
S
D
S
Continuous Source Current
MOSFET symbol
–––
–––
3.9
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
I
SM
–––
–––
110
(Body Diode)
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
–––
–––
–––
–––
14
1.0
21
14
V
T =
25°C, I
= 11A, V
= 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T
= 25°C, I
= 11A, V
DD
= 15V
J F
Q
rr
t
on
di/dt = 200A/µs
9.5
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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© 2013 International Rectifier
August 16, 2013
2
IRFH7914PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 150°C
≤
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
BOTTOM
BOTTOM
1
1
2.3V
2.3V
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
1000
2.0
1.5
1.0
0.5
I
= 14A
D
V
= 10V
GS
100
10
1
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
60µs PULSE WIDTH
≤
0.1
1
2
3
4
5
6
-60 -40 -20
0
20 40 60 80
100 12
0
1
40 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4.
Normalized On-Resistance
Fig 3.
Typical Transfer Characteristics
vs
.
T
emperature
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© 2013 International Rectifier
August 16, 2013
3
IRFH7914PbF
10000
1000
100
14.0
12.0
10.0
8.0
V
C
= 0V,
f = 1 MHZ
GS
I =
11A
D
= C
+ C
, C
SHORTED
iss
gs gd
ds
C
= C
rss
gd
V
V
= 24V
= 15V
C
= C
+ C
ds gd
DS
DS
oss
C
iss
C
oss
6.0
C
rss
4.0
2.0
10
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
2
4
6
8
10 12 14 16 18 20 22
V
Q
, Total
Gate Charge (nC)
DS
G
Fig 6.
Typical Gate Charge vs.
Fig 5.
Typical Capacitance vs.
Gate-to-Sourc
e
V
oltage
Drain-to-Sourc
e
V
oltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
T
= 150°C
J
1msec
T
= 25°C
DC
J
10msec
1
1
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
1.4
GS
0.1
0.1
0
1
10
100
0.2
0.4
V
0.6
0.8
1.0
1.2
1.6
V
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
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© 2013 International Rectifier
August 16, 2013
4
IRFH7914PbF
2.5
2.0
1.5
1.0
0.5
16
14
12
10
8
I
= 25µA
D
6
4
2
0
-75 -50 -25
0
25 50 75
100 125 150
25
50
75
100
125
150
T
, Temperature ( °C )
T
, Ambient Temperature (°C)
J
A
Fig 9.
Maximum Drain Current vs.
Fig 10.
Threshold Voltage vs. Temperature
Ambien
t
T
emperature
100
D = 0.50
10
1
0.20
0.10
R
1
R
1
R
2
R
2
R
3
R
3
R
4
R
4
0.05
Ri (°C/W)
τ
i (sec)
τ
τ
J
τ
J
τ
2.0021
0.000245
A
τ
A
0.02
0.01
τ
1
τ
1
τ
τ
6.0077
0.014521
2
τ
2
3
τ
3
4
τ
4
15.5002 0.7719
16.4970 38.3
Ci=
τ
i
/
Ri
Ci=
τ
i
/
Ri
0.1
Notes:
1. Duty Factor D = t1/t2
SINGLE PULSE
2. Peak Tj = P dm x Zthja + T
( THERMAL RESPONSE )
A
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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© 2013 International Rectifier
August 16, 2013
5
IRFH7914PbF
25
20
15
10
5
80
70
60
50
40
30
20
10
0
I
= 14A
I
D
D
TOP
3.1A
4.0A
BOTTOM 11A
T
= 125°C
J
T
= 25°C
6
J
0
2
4
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
J
V
Gate -to -Source Voltage
(V)
GS,
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy
vs. Drain Current
R
D
V
DS
15V
V
GS
D.U.T.
R
G
DRIVER
+
L
+
V
DD
V
DS
–
V
GS
Puls
e
W
idth
≤ 1
µs
Dut
y
F
acto
r
≤ 0.1
D.U.T
AS
R
G
V
DD
–
I
A
20V
Ω
0.01
t
p
Fig 15a.
Switching Time Test Circuit
Fig 14a.
Unclamped Inductive Test Circuit
V
(BR)DSS
V
DS
t
90%
p
10%
V
GS
t
d(on)
t
d(off)
t
r
t
f
I
AS
Fig 15b.
Switching Time Waveforms
Fig 14b.
Unclamped Inductive Waveforms
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© 2013 International Rectifier
August 16, 2013
6
IRFH7914PbF
Driver Gate Drive
P.W.
P
.
W.
D =
Period
D.U.T
Period
+
*
=10V
V
GS
Circui
t
L
ayou
t
C
onsiderations
•
Lo
w
S
tra
y
I
nductance
•
Ground Plane
•
Lo
w
L
eakag
e
I
nductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/d
t
c
ontrolle
d
b
y
R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 16.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
Current Regulator
Id
Vds
Same Type as D.U.
T
.
Vgs
50K
Ω
.2
µ
F
.3
µ
F
12V
+
V
DS
D.U.
T
.
–
Vgs(th)
V
GS
3mA
I
I
Qgs1
Qgs2
Qgd
Qgodr
G
D
Current Sampling Resistors
Fig 18.
Gate Charge Waveform
Fig 17.
Gate Charge Test Circuit
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© 2013 International Rectifier
August 16, 2013
7
IRFH7914PbF
PQFN 5×6 Option “E” Package Details
PQFN Part Marking
INTERNATIONAL
RECTIFIER LOGO
6
DATE CODE
PART NUMBER
XXXX
ASSEMBLY SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
(Per Marking Spec.)
XXXXX
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode – Min. last 4 digits of EATI #)
(Prod Mode – 4 digits SPN code)
TOP MARKING (LASER)
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© 2013 International Rectifier
August 16, 2013
8
IRFH7914PbF
PQFN Tape and Reel
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.27mH, R
G
= 25
Ω
, I
AS
= 11A.
Pulse width
≤
400µs; duty cycle
≤
2%.
Rthjc is guaranteed by design
Re vi
s
i
on
Hi
s
t
ory
D
a
te
Comments
08/08/2013
Updated the package drawing, on page 1.
Updated the package outline drawing, on page 8.
This drawing change is related to PCN “Hana-GTBF-GEM 5×6 PQFN
•
•
•
Public.”
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
www.irf.com
© 2013 International Rectifier
August 16, 2013
9
