Infineon-Technologies-IRFH7934TRPBF
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IRFH7934PbF
HEXFET
®
Power MOSFET
Applications
V
DSS
30V
R
DS(on)
max
Qg
l
Control MOSFET of Sync-Buck Converters
used for Notebook Processor Power
Control MOSFET for Isolated DC-DC
3.5m @V
GS
= 10V
20nC
l
Converters in Networking Systems
Benefits
l
l
l
Very low R
DS(ON)
at 4.5V V
GS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
l
l
l
l
l
100% Tested for R
G
PQFN 5X6 mm
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
Large Source Lead for more reliable Soldering
Base part number
I
R
FH7934PBF
Package Type
Standard Pack
Orderable part number
Form
Tape and Reel
Quantity
PQFN 5mm x 6mm
4000
I
R
FH7934TRPBF
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
Units
V
DS
30
± 20
24
V
V
GS
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
I
I
I
@ T
A
= 25°C
D
D
D
@ T
A
= 70°C
@ T
C
= 25°C
19
A
76
190
3.1
2.0
DM
Power Dissipation
P
P
@T
A
= 25°C
@T
A
= 70°C
D
D
W
W/°C
°C
Power Dissipation
Linear Derating Factor
0.025
-55 to
+ 150
T
Operating Junction and
Storage Temperature Range
J
T
STG
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
Max.
2.9
Units
R
θ
JC
R
θ
JA
°C/W
–––
40
Notes
through
ꢀ
are on page 10
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© 2013 International Rectifier
August 20, 2013
1
IRFH7934PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max.
Units
30 –––
–––
Conditions
V
GS
= 0V, I
D
= 250
μ
A
BV
DSS
V
ΔΒ
V
DSS
/
Δ
T
J
R
DS(on)
Breakdown Voltage Temp. Coefficient
––– 0.021 –––
V/°C Reference
to 25°C, I
D
= 1mA
Static Drain-to-Source On-Resistance
–––
–––
1.35
–––
–––
–––
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.9
4.2
3.5
5.1
V
V
GS
= 10V, I
D
= 24A
GS
= 4.5V, I
D
= 19A
m
Ω
V
GS(th)
Δ
V
GS(th)
I
DSS
Gate Threshold Voltage
1.8
2.35
V
V
DS
= V
GS
, I
D
= 50
μ
A
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
-6.5
–––
–––
–––
––– mV/°C
1.0
V
V
DS
= 24V, V
GS
= 0V
μ
A
150
DS
= 24V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
V
GS
= 20V
V
GS
= -20V
––– -100
gfs
–––
20
–––
30
S
V
DS
= 15V, I
D
= 19A
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
4.8
2.5
6.3
6.4
8.8
15
–––
–––
–––
–––
–––
–––
3.1
V
DS
= 15V
V
GS
= 4.5V
I
D
= 19A
nC
See Fig.17 & 18
nC V
DS
= 16V, V
GS
= 0V
Gate Resistance
1.7
12
Ω
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
–––
–––
–––
–––
V
DD
= 15V, V
GS
= 4.5V
Rise Time
16
I
D
= 19A
ns
Ω
Turn-Off Delay Time
14
R
G
=1.8
Fall Time
7.5
See Fig.15
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
C
iss
C
oss
C
rss
Input Capacitance
––– 3100 –––
pF
Output Capacitance
–––
–––
623
241
–––
–––
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
Units
mJ
E
AS
I
AR
97
19
A
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max.
Units
Conditions
MOSFET symbol
D
S
I
S
–––
–––
3.9
(Body Diode)
showing the
A
G
I
SM
Pulsed Source Current
integral reverse
–––
–––
190
(Body Diode)
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
–––
–––
–––
–––
20
1.0
30
42
V
T =
25°C, I
= 19A, V
= 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T
= 25°C, I
= 19A, V
DD
= 15V
J F
Q
rr
t
on
28
nC di/dt
= 325A/
μ
s
See Fig.16
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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© 2013 International Rectifier
August 20, 2013
IRFH7934PbF
2
1000
100
10
1000
100
10
VGS
10V
VGS
TOP
TOP
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
BOTTOM
BOTTOM
2.7V
≤
60
μ
s PULSE WIDTH
Tj = 25°C
60
μ
s PULSE WIDTH
Tj = 150°C
≤
2.7V
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
1000
2.0
1.5
1.0
0.5
I
= 24A
D
V
= 10V
GS
100
10
T
= 150°C
J
T
= 25°C
= 15V
J
1
0.1
0.01
V
DS
≤
60
μ
s PULSE WIDTH
1.0
2.0
3.0
4.0
5.0
-60 -40 -20
T
0
20 40 60 80
100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 4.
Normalized On-Resistance
Fig 3.
Typical Transfer Characteristics
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© 2013 International Rectifier
vs. Temperature
August 20, 2013
3
IRFH7934PbF
100000
10000
1000
14
12
10
8
V
C
= 0V,
f = 1 MHZ
GS
I
= 19A
= C
+ C
, C
SHORTED
D
iss
gs
gd ds
V
V
= 24V
= 15V
DS
DS
C
C
= C
rss
oss
gd
= C
+ C
ds
gd
Ciss
6
Coss
Crss
4
2
0
100
0
10
20
30
40
50
60
70
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6.
Typical Gate Charge vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
100
μ
sec
T
= 150°C
J
1msec
DC
T
= 25°C
J
1
10msec
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-toSource Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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© 2013 International Rectifier
August 20, 2013
IRFH7934PbF
4
25
20
15
10
5
2.0
1.6
1.2
0.8
I
= 50
μ
A
D
0
25
50
T
75
100
125
150
-75 -50 -25
0
25
50
75 100
125 150
T
, Temperature ( °C )
, Ambient Temperature (°C)
J
J
Fig 9.
Maximum Drain Current vs.
Fig 10.
Threshold Voltage vs. Temperature
Ambient Temperature
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
R
1
R
1
R
2
R
2
R
3
R
3
R
4
R
4
τι
(sec)
Ri (°C/W)
τ
J
6.955975 0.065034
15.08336 5.307554
1.818966 0.00141
16.08526 0.757022
τ
C
τ
J
τ
1
τ
τ
τ
3
τ
3
τ
4
2
τ
2
0.1
τ
1
τ
4
Ci=
τ
i
/
Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRFH7934PbF
14
12
10
8
400
300
200
100
0
I
= 24A
I
D
D
TOP
2.5A
3.7A
19A
BOTTOM
6
T
= 125°C
J
4
T
= 25°C
8
J
2
0
2
3
4
5
6
7
9
10
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
GS
Starting T
, Junction Temperature (°C)
J
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy
vs. Drain Current
R
D
V
DS
15V
V
GS
D.U.T.
R
G
DRIVER
+
L
+
V
DD
V
DS
–
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
D.U.T
AS
R
G
V
DD
–
I
A
20V
Ω
0.01
t
p
Fig 15a.
Switching Time Test Circuit
Fig 14a.
Unclamped Inductive Test Circuit
V
(BR)DSS
V
DS
t
p
90%
10%
V
GS
t
d(on)
t
d(off)
t
r
t
f
I
AS
Fig 15b.
Switching Time Waveforms
Fig 14b.
Unclamped Inductive Waveforms
6
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© 2013 International Rectifier
August 20, 2013
IRFH7934PbF
6
Driver Gate Drive
P.W.
P
.
W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/dt controlled by R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 16.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
Current Regulator
Id
Vds
Same Type as D.U.
T
.
Vgs
50K
Ω
.2
μ
F
.3
μ
F
12V
+
V
DS
D.U.
T
.
–
Vgs(th)
Qgs1
V
GS
3mA
I
I
Qgs2
Qgd
Qgodr
G
D
Current Sampling Resistors
Fig 18.
Gate Charge Waveform
August 20, 2013
Fig 17.
Gate Charge Test Circuit
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© 2013 International Rectifier
7
IRFH7934PbF
PQFN 5×6 Option “E” Package Details
PQFN Part Marking
INTERNATIONAL
RECTIFIER LOGO
6
DATE CODE
PART NUMBER
XXXX
ASSEMBLY SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
(Per Marking Spec.)
XXXXX
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode – Min. last 4 digits of EATI #)
(Prod Mode – 4 digits SPN code)
TOP MARKING (LASER)
8
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© 2013 International Rectifier
August 20, 2013
IRFH7934PbF
Qualification information
†
Cons ume
r
††
(
p
er
J
E
D
E
C JES
D
47F
†††
g
u
i
d
e
l
ines )
MS L
2
††††
Qualification level
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(
p
er
J
E
D
E
C J-
S
T
D
-020D
†††
)
Yes
†
Qualification standards can be found at International Rectifier’s web site
††
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
†††
Applicable version of JEDEC standard at the time of product release.
††††
Higher MSL ratings may be available for the specific package types listed here.
Please contact your International Rectifier sales representative for further information:
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.535mH, R
G
= 25
Ω
, I
AS
= 19A.
Pulse width
≤
400
μ
s; duty cycle
≤
2%.
Rthjc is guaranteed by design
ꢀ
When mounted on 1 inch square
2 oz copper pad on 1.5×1.5 in. board of FR-4 material.
Revision History
Date
Comments
08/06/2013
•
Updated the package outline drawing, on page 8.
•
This drawing change is related to PCN Hana-GTBF-GEM 5×6 PQFN Public.
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
10
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© 2013 International Rectifier
August 20, 2013
