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IRFI4227PbF
HEXFET
®
Power MOSFET
Features
Advanced Process Technology
Key Parameters
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
Low E
PULSE
Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
V
DS
max
DS (Avalanche)
typ.
R
DS(ON)
typ. @ 10V
RP
max @ T
C
= 100°C
200
V
V
V
240
21
m
A
Low Q
G
for Fast Response
High Repetitive Peak Current Capability for
Reliable Operation
I
47
T
J
max
150
°C
Short Fall & Rise Times for Fast Switching
150°C Operating Junction Temperature for
Improved Ruggedness
Repetitive Avalanche Capability for Robustness and
Reliability
S
D
G
TO-220 Full-Pak
G
D
S
Gate
Drain
Source
Description
This HEXFET
®
Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in
Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon
area and low EPULSE rating. Additional features of this MOSFET are 150°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable
device for PDP driving applications
Standard Pack
Base Part Number
Package Type
Orderable Part Number
Form
Quantity
IRFI4227PbF
TO-220 Full-Pak
Tube
50
IRFI4227PbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
V
GS
Gate-to-Source Voltage
± 30
26
V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
17
100
47
A
I
RP
@ T
C
= 100°C
Repetitive Peak Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
46
W
18
W/°C
°C
0.37
T
J
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
-40 to
+ 150
300
T
STG
10 lbf•in (1.1N•m)
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
2.73
65
Units
°C/W
1
2017-04-27
IRFI4227PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
200 –––
––– 240
–––
V
V
GS
= 0V, I
D
= 250µA
––– mV/°C
Reference to 25°C, I
D
= 1mA
V
(BR)DSS
/
T
J
R
DS(on)
–––
3.0
21
–––
-11
25
V
GS
= 10V, I
D
= 17A
m
V
V
GS(th)
5.0
V
DS
= V
GS
, I
D
= 250µA
Gate Threshold Voltage Temp. Coefficient
–––
––– mV/°C
V
GS(th)/
T
J
––– –––
––– –––
––– –––
20
1.0
100
µA
mA
V
V
V
V
V
DS
= 200V, V
GS
= 0V
DS
= 200V,V
GS
= 0V,T
J
=150°C
GS
= 20V
GS
= -20V
DS
= 25V, I
D
= 17A
I
DSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Trans conductance
Total Gate Charge
I
GSS
nA
S
––– ––– -100
gfs
Q
g
47
–––
73
–––
110
–––
–––
–––
–––
–––
I
D
= 17A,V
DS
= 100V
GS
= 10V
nC
Q
gd
t
d(on)
Gate-to-Drain Charge
21
V
Turn-On Delay Time
17
V
DD
= 100V, V
GS
= 10V
t
r
t
d(off)
t
f
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
19
11
29
–––
–––
–––
–––
I
D
= 17A
R
G
= 2.5
See Fig. 22
ns
t
st
Shoot Through Blocking Time
100 –––
ns
µJ
V
DD
= 160V,V
GS
= 15V,R
G
= 4.7
L = 220nH, C = 0.4µF, V
GS
= 15V
V
DD
= 160V, R
G
= 4.7
T
J
= 25°C
L = 220nH, C = 0.4µF, V
GS
= 15V
V
DD
= 160V, R
G
= 4.7
T
J
= 100°C
V
GS
= 0V
––– 570
–––
–––
E
PULSE
Energy per Pulse
––– 910
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
––– 4600 –––
––– 460
––– 91
––– 360
–––
–––
–––
V
DS
= 25V
ƒ = 1.0MHz
pF
nH
C
oss
eff.
V
GS
= 0V, V
DS
= 20V to 160V
Between lead,
6mm (0.25in.)
from package
and center of die contact
L
D
L
S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
7.5
–––
–––
Avalanche Characteristics
Parameter
Typ.
Max.
54
4.6
–––
16
Units
E
AS
–––
–––
240
–––
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
Avalanche Current
mJ
E
AR
V
DS(Avalanche)
I
AS
V
A
Diode Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
S
@ T
C
= 25°C
I
SM
––– –––
26
A
V
––– –––
––– –––
100
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1.3
140
520
T
J
= 25°C,I
S
= 17A,V
GS
= 0V
–––
93
ns T
J
= 25°C ,I
F
= 17A, V
DD
= 50V
Q
rr
––– 350
nC di/dt
= 100A/µs
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
starting T
J
= 25°C, L = 0.44mH, R
G
= 25
, I
AS
= 16A.
Pulse width
400µs; duty cycle
2%.
R
θ
is measured at T
J
of approximately 90°C.
Half sine wave with duty cycle = 0.25, ton=1
μ
sec.
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IRFI4227PbF
VGS
15V
10V
VGS
15V
10V
TOP
TOP
7.0V
8.0V
7.0V
8.0V
7.0V
7.0V
BOTTOM
BOTTOM
100
100
10
10
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 150°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig. 1.
Typical Output Characteristics
Fig. 2.
Typical Output Characteristics
3.0
1000.0
100.0
10.0
1.0
I
= 17A
V
= 25V
D
DS
60µs PULSE WIDTH
V
= 10V
GS
2.5
2.0
1.5
1.0
0.5
0.0
T
= 150°C
J
T
= 25°C
6.0
J
0.1
3.0
4.0
5.0
7.0
8.0
-60 -40 -20
T
0
20 40 60 80
100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig. 4.
Normalized On-Resistance vs. Temperature
Fig. 3.
Typical Transfer Characteristics
1000
1000
L = 220nH
C = Variable
L = 220nH
C = 0.4µF
100°C
900
800
700
600
500
400
300
200
100
100°C
25°C
800
25°C
600
400
200
0
130
140
150
160
170
180
190
110
120
130
140
150
160
170
I
Peak Drain Current
(A)
D,
V
Drain-to -Source Voltage
(V)
DS,
Fig 5.
Typical E
PULSE
vs. Drain-to-Source Voltage
Fig 6.
Typical E
PULSE
vs. Drain Current
3
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IRFI4227PbF
1000.0
100.0
10.0
1.0
1400
1200
1000
800
600
400
200
0
L = 220nH
C= 0.4µF
C= 0.3µF
C= 0.2µF
T
= 150°C
J
T
= 25°C
J
V
= 0V
GS
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
V
, Source-to-Drain Voltage (V)
Temperature (°C)
SD
Fig. 7.
Typical E
PULSE
vs. Temperature
Fig 8.
Typical Source-Drain Diode Forward Voltage
8000
6000
4000
2000
0
20
V
C
= 0V,
f = 1 MHZ
I =
17A
D
GS
= C
+ C
, C
SHORTED
iss
gs
gd ds
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
C
= C
rss
gd
16
12
8
C
= C
+ C
oss
ds
gd
Ciss
Coss
Crss
4
0
0
20
40
60
80
100
120
1
10
100
1000
Q
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 9.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 10.
Typical Gate Charge vs. Gate-to-Source Voltage
30
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
1µsec
20
10
0
10µsec
100µsec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
25
50
75
100
125
150
1
10
100
1000
T
, CaseTemperature (°C)
V
, Drain-to-Source Voltage (V)
C
DS
Fig 11.
Maximum Drain Current vs. Case Temperature
Fig 12.
Maximum Safe Operating Area
2017-04-27
4
IRFI4227PbF
240
200
160
120
80
0.16
0.12
0.08
0.04
0.00
I
I
= 17A
D
D
TOP
2.5A
3.0A
16A
BOTTOM
T
T
= 125°C
J
40
= 25°C
9
J
0
25
50
75
100
125
150
5
6
7
8
10
Starting T
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig. 14.
Maximum Avalanche Energy Vs. Temperature
Fig. 13.
On-Resistance Vs. Gate Voltage
80
5.0
4.5
4.0
3.5
3.0
2.5
2.0
ton= 1µs
Duty cycle = 0.25
Half Sine Wave
Square Pulse
60
I
= 250µA
D
40
20
0
-75 -50 -25
0
25
50
75 100
125 150
25
50
75
100
125
150
T
, Temperature ( °C )
Case Temperature (°C)
J
Fig. 15.
Threshold Voltage vs. Temperature
Fig. 16.
Typical Repetitive peak Current vs.
Case temperature
10
D = 0.50
1
0.20
0.10
R
1
R
1
R
2
R
2
R
3
R
3
Ri (°C/W)
0.44978
0.9085
i (sec)
0.000177
0.105329
2.0127
0.05
0.1
J
J
C
C
1
1
0.02
0.01
2
2
3
3
Ci=
i
Ri
Ci=
i
Ri
1.3717
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 17.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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IRFI4227PbF
Fig 18.
Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 19b.
Unclamped Inductive Waveforms
Fig 19a.
Unclamped Inductive Test Circuit
Fig 20a.
Gate Charge Test Circuit
Fig 20b.
Gate Charge Waveform
2017-04-27
6
IRFI4227PbF
Fig 21a.
t
st
and E
PULSE
Test Circuit
Fig 21b.
t
st
Test Waveforms
Fig 21c.
E
PULSE
Test Waveforms
Fig 22b.
Switching Time Waveforms
Fig 22a.
Switching Time Test Circuit
7
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IRFI4227PbF
TO-220 Full-Pak Package Outline
(Dimensions are shown in millimeters (inches))
TO-220 Full-Pak Part Marking Information
TO-220AB Full-Pak
packages are not recommended for Surface Mount Application.
8
2017-04-27
IRFI4227PbF
Qualification Information
Qualification Level
Industrial
(per JEDEC JESD47F)
†
TO-220 Full-Pak
N/A
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Changed datasheet with Infineon logo – all pages.
Corrected Package Outline on page 8.
Added disclaimer on last page.
04/27/2017
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™,
CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies o
ff
ice
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Bescha
ff
enheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
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Due to technical requirements products may
In addition, any information given in this
contain dangerous substances. For information on
document
is subject to customer’s compliance
the types in question please contact your nearest
with its
obligations stated in this document and
Infineon Technologies o
ff
ice.
any applicable legal requirements, norms and
standards concerning customer’s products and
Except as otherwise explicitly approved by Infineon
any use of the product of Infineon Technologies in
Technologies in a written document signed by
customer’s applications.
Document reference
ifx1
authorized
representatives
of
Infineon
Technologies,
Infineon Technologies’ products
may
not be used in any applications where a
failure of the product or any consequences of the
use thereof can reasonably be expected to result in
personal injury.
The data contained in this document is exclusively
intended for technically trained sta
ff
. It is the
responsibility
of
customer’s
technical
departments
to evaluate the suitability of the
product for the intended application and the
completeness of the product information given in
this document with respect to such application.
9
2017-04-27
