Infineon-Technologies-IRFI540NPBF
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IRFI540NPbF
HEXFET
®
Power MOSFET
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
V
DSS
R
DS(on)
I
D
100V
0.052
Lead-Free
20A
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area.
This benefit, combined with the
fast switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications.
S
D
G
TO-220 Full-Pak
G
D
S
The TO-220 Full Pak eliminates the need for additional insulating
hardware in commercial-industrial applications. The molding
compound used provides a high isolation capability and a low
thermal resistance between the tab and external heat sink. This
isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product.
The Fullpak is mounted to a heat sink
using a single clip or by a single screw fixing.
Gate
Drain
Source
Standard Pack
Quantity
50
Base Part Number
Package Type
Orderable Part Number
Form
IRFI540NPbF
TO-220 Full-Pak
Tube
IRFI540NPbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
20
Units
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
14
110
54
P
D
@T
C
= 25°C
W
W/°C
V
0.36
V
GS
E
AS
I
AR
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
± 20
300
mJ
A
16
5.4
E
AR
dv/dt
T
J
Repetitive Avalanche Energy
mJ
V/ns
Peak Diode Recovery dv/dt
5.0
Operating Junction and
-55 to
+ 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
300
10 lbf•in (1.1N•m)
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
2.8
65
Units
°C/W
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IRFI540NPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Units
100 ––– –––
––– 0.11 ––– V/°C
Reference to 25°C, I
D
= 1mA
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
R
DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
V
GS
= 0V, I
D
= 250µA
––– –––
0.052
V
GS
= 10V, I
D
= 11A
V
S
V
GS(th)
gfs
2.0
11
––– –––
––– –––
––– –––
–––
–––
4.0
–––
25
250
100
V
DS
= V
GS
, I
D
= 250µA
Forward Trans conductance
V
DS
= 50V, I
D
= 16A
V
DS
= 100V, V
GS
= 0V
I
DSS
I
GSS
Drain-to-Source Leakage Current
µA
nA
V
DS
= 80V,V
GS
= 0V,T
J
=150°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
V
V
GS
= 20V
GS
= -20V
––– ––– -100
Q
g
Q
gs
Q
gd
t
d(on)
t
r
––– –––
––– –––
––– –––
94
15
43
I
D
= 16A
nC V
DS
= 80V
V
GS
= 10V , See Fig. 6 and 13
–––
–––
–––
–––
8.2
39
44
33
–––
–––
–––
–––
V
DD
= 50V
I
D
= 16A
R
G
= 5.1
R
D
= 3.0
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ns
nH
pF
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
L
D
L
S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
7.5
–––
–––
C
iss
C
oss
C
rss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
––– 1400 –––
––– 330
––– 170
–––
–––
–––
ƒ = 1.0MHz, See Fig. 5
ƒ = 1.0MHz
–––
12
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
Min. Typ. Max.
Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
S
––– –––
––– –––
20
A
V
I
SM
110
(Body Diode)
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– –––
––– 170
1.3
250
1.6
T
J
= 25°C,I
S
= 11A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= 16A
di/dt = 100A/µs
C
Q
rr
–––
1.1
Notes:
Repetitive rating;
pulse width limited by max. junction temperature. (See fig. 11)
V
DD
= 25V, starting
T
J
= 25°C, L = 2.0mH, R
G
= 25
, I
AS
= 16A
(See fig. 12)
I
SD
16A, di/dt
210A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
300µs; duty cycle
2%.
t=60s, ƒ=60Hz
Uses IRF540N data and test conditions.
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IRFI540NPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T =
25°C
T =
175°C
C
C
1
0.1
A
100
1
0.1
A
100
1
10
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig. 2
Typical Output Characteristics
Fig. 1
Typical Output Characteristics
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 27A
D
T =
25°C
J
T
J
= 175°C
V
DS
= 50V
20µs PULSE WIDTH
V
= 10V
GS
1
A
10
A
-60 -40 -20
0
20 40 60 80
100 120 140 160 180
4
5
6
7
8
9
T ,
Junction Temperature (°C)
V
GS
, Gate-to-Source Voltage (V)
J
Fig. 4
Normalized On-Resistance
Fig. 3
Typical Transfer Characteristics
vs. Temperature
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IRFI540NPbF
2400
2000
1600
1200
800
400
0
20
16
12
8
I
= 16A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
V
V
V
= 80V
= 50V
= 20V
= C
+ C
, C
SHORTED
DS
DS
DS
gs
gd
ds
= C
gd
C
= C
+ C
iss
ds
gd
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
20
40
60
80
100
V
, Drain-to-Source Voltage (V)
Q ,
Total Gate Charge (nC)
DS
G
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
100µs
T =
175°C
J
1ms
T =
25°C
J
T
T
= 25°C
= 175°C
C
J
10ms
V
GS
= 0V
Single Pulse
A
1
A
1000
0.4
0.8
1.2
1.6
2.0
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
DS
Fig. 7
Typical Source-to-Drain Diode
Fig 8.
Maximum Safe Operating Area
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Forward Voltage
4
IRFI540NPbF
20
15
10
5
Fig 10a.
Switching Time Test Circuit
0
25
50
75
100
125
150
175
°
( C)
T ,
Case Temperature
C
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10b.
Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
P
2
DM
0.1
0.02
t
1
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t /
t
1
2. Peak T
=
P
J
x Z
+ T
thJC C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFI540NPbF
700
600
500
400
300
200
100
0
I
D
TOP
6.6A
11A
BOTTOM 16A
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
20V
0.01
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
= 25V
50
DD
A
175
25
75
100
125
150
Starting T
, Junction Temperature (°C)
J
V
(BR)DSS
t
p
Fig 12c.
Maximum Avalanche Energy
vs. Drain Current
I
AS
Fig 12b.
Unclamped Inductive Waveforms
Fig 13a.
Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit
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IRFI540NPbF
Fig 14.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
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IRFI540NPbF
TO-220 Full-Pak Package Outline
(Dimensions are shown in millimeters (inches))
TO-220 Full-Pak Part Marking Information
TO-220AB Full-Pak
packages are not recommended for Surface Mount Application.
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IRFI540NPbF
Qualification Information
Qualification Level
Industrial
(per JEDEC JESD47F)
†
TO-220 Full-Pak
N/A
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Changed datasheet with Infineon logo – all pages.
Corrected Package Outline on page 8.
Added disclaimer on last page.
04/27/2017
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™,
CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies o
ff
ice
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Bescha
ff
enheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
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Due to technical requirements products may
In addition, any information given in this
contain dangerous substances. For information on
document
is subject to customer’s compliance
the types in question please contact your nearest
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obligations stated in this document and
Infineon Technologies o
ff
ice.
any applicable legal requirements, norms and
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Except as otherwise explicitly approved by Infineon
any use of the product of Infineon Technologies in
Technologies in a written document signed by
customer’s applications.
Document reference
ifx1
authorized
representatives
of
Infineon
Technologies,
Infineon Technologies’ products
may
not be used in any applications where a
failure of the product or any consequences of the
use thereof can reasonably be expected to result in
personal injury.
The data contained in this document is exclusively
intended for technically trained sta
ff
. It is the
responsibility
of
customer’s
technical
departments
to evaluate the suitability of the
product for the intended application and the
completeness of the product information given in
this document with respect to such application.
9
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