Infineon-Technologies-IRFL024ZTRPBF
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PD – 95312A
IRFL024ZPbF
HEXFET
®
Power MOSFET
Features
D
l
l
l
l
l
l
Advanced Process Technology
V
DSS
= 55V
Ultr
a
L
o
w
O
n-Resistance
150°
C
O
peratin
g
T
emperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
R
DS(on)
= 57.5m
Ω
G
I
D
= 5.1A
S
Description
This HEXFET
®
Power MOSFET utilizes the latest
processin
g
t
echnique
s
t
o
a
chiev
e
e
xtremel
y
l
o
w
o
n-
resistance per silicon area.
Additional features of
thi
s
d
esign ar
e
a
1
50°
C
j
unctio
n
o
peratin
g
t
emperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
thi
s
d
esig
n
a
n
e
xtremel
y
e
fficien
t
a
n
d
r
eliabl
e
d
evice
for use in a wide variety of applications.
SOT-223
Absolute Maximum Ratings
Parameter
Max.
5.1
Units
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
I
I
@ T
A
= 25°C
@ T
A
= 70°C
D
4.1
A
D
41
DM
2.8
Power Dissipation
P
@T
A
= 25°C
@T
A
= 25°C
D
D
1.0
Power Dissipation
W
W/°C
V
P
0.02
± 20
Linear Derating Factor
Gate-to-Source Voltage
V
GS
E
AS (Thermally limited)
13
32
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
E
AS
(Tested )
I
AR
See Fig.12a, 12b, 15, 16
A
E
AR
Repetitive Avalanche Energy
Operating Junction and
mJ
-55 to
+ 150
T
T
J
Storage Temperature Range
°C
STG
Thermal Resistance
Parameter
Typ.
–––
Max.
45
Units
R
θ
R
θ
Junction-to-Ambient (PCB mount, steady state)
JA
°C/W
Junction-to-Ambient (PCB mount, steady state)
–––
120
JA
1
09/16/10
IRFL024ZPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
∆
V
(BR)DSS
/
∆
T
J
R
DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
55
–––
–––
V
V
GS
= 0V, I
D
= 250µA
––– 0.053 –––
––– 46.2 57.5
V/°C Reference
to 25°C, I
D
= 1mA
m
Ω
V
GS
= 10V, I
D
= 3.1A
V
GS(th)
2.0
6.2
–––
–––
–––
–––
–––
4.0
–––
20
V
S
V
DS
= V
GS
, I
D
= 250µA
gfs
Forward Transconductance
V
DS
= 25V, I
D
= 3.1A
DS
= 55V, V
GS
= 0V
I
DSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA
V
250
200
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA V
GS
= 20V
V
GS
= -20V
––– -200
Q
g
9.1
1.9
3.9
7.8
21
14
I
D
= 3.1A
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
Rise Time
ns
I
D
= 3.1A
R
G
= 53
Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
t
d(off)
t
f
Turn-Off Delay Time
30
Fall Time
23
C
iss
C
oss
C
rss
C
oss
C
oss
Input Capacitance
340
68
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
39
pF ƒ
= 1.0MHz
V
GS
= 0V,
V
DS
= 1.0V,
ƒ = 1.0MHz
210
55
Output Capacitance
V
GS
= 0V,
V
DS
= 44V,
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
C
oss
eff.
Effective Output Capacitance
93
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
I
Continuous Source Current
(Body Diode)
–––
–––
5.1
S
A
showing the
G
I
Pulsed Source Current
(Body Diode)
–––
–––
41
integral reverse
SM
S
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
15
1.3
23
15
V
T =
25°C, I
= 3.1A, V
= 0V
GS
SD
J
S
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
T =
25°C, I
= 3.1A, V
DD
= 28V
J F
rr
di/dt = 100A/µs
Q
t
9.8
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
ꢀ
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche
performance.
Repetitive rating;
pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L = 2.8mH
This value determined from sample failure population.
100% tested to this value in production.
R
G
= 25
Ω
, I
AS
= 3.1A, V
GS
=10V.
Part not recommended for use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80%
When mounted on 1 inch square copper board.
When mounted on FR-4 board using minimum
recommended footprint.
V
DSS
.
2
IRFL024ZPbF
100
10
1
100
10
1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
30µs PULSE WIDTH
Tj = 150°C
30µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
12
T
T
= 25°C
J
J
10
8
T
= 150°C
J
= 150°C
10
6
4
T =
25°C
J
2
V
= 25V
DS
30µs PULSE WIDTH
V
= 10V
10
DS
1.0
0
4
5
6
7
8
9
10
0
2
4
6
8
12
I ,Drain-to-Source
Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
3
IRFL024ZPbF
10000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I
= 3.1A
D
C
C
C
+ C
, C
SHORTED
iss
gs
gd
ds
V
V
V
= 44V
= 28V
= 11V
= C
DS
DS
DS
rss
oss
gd
= C
+ C
ds
gd
1000
100
10
C
C
iss
6.0
oss
4.0
C
rss
2.0
0.0
1
10
100
0
2
4
6
8
10
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 6.
Typical Gate Charge vs.
Fig 5.
Typical Capacitance vs.
Gate-to-Sourc
e
V
oltage
Drain-to-Sourc
e
V
oltage
1000
100
10
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100µsec
T
= 25°C
J
1
T
= 25°C
A
1msec
Tj = 150°C
Single Pulse
V
= 0V
10msec
GS
0.1
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
1000
V
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
SD
DS
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRFL024ZPbF
2.0
1.5
1.0
0.5
6
5
4
3
2
1
0
I
= 3.1A
D
V
= 10V
GS
-60 -40 -20
0
20 40 60 80
100 120 140 160
25
50
T
75
100
125
150
,Ambient Temperature (°C)
T
J
, Junction Temperature (°C)
A
Fig 10.
Normalized On-Resistance
Fig 9.
Maximum Drain Current vs.
vs
.
T
emperature
Ambien
t
T
emperature
100
10
D = 0.50
0.20
0.10
0.05
R
1
R
1
R
2
R
2
R
3
R
3
Ri (°C/W)
τ
i (sec)
0.02
0.01
1
τ
J
τ
J
τ
τ
C
τ
5.0477
0.000463
τ
1
τ
1
τ
2
τ
2
3
τ
3
19.9479 0.636160
20.0169 21.10000
Ci=
τ
i
/
Ri
0.1
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRFL024ZPbF
60
50
40
30
20
10
0
15V
I
D
TOP
0.77A
0.89A
BOTTOM 3.1A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
2
V
0
G
V
S
Ω
0.01
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
J
I
AS
Fig 12c.
Maximum Avalanche Energy
Fig 12b.
Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
3.5
3.0
2.5
2.0
V
G
Charge
Fig 13a.
Basic Gate Charge Waveform
I
= 250µA
D
L
VCC
DUT
0
-75 -50 -25
0
25
50
75 100
125 150
1K
T ,
Temperature ( °C )
J
Fig 14.
Threshold Voltage vs. Temperature
Fig 13b.
Gate Charge Test Circuit
6
IRFL024ZPbF
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
1
0.01
∆
assuming
Tj = 25°C due to
avalanche losses
0.05
0.10
0.1
0.01
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
tav (sec)
Fig 15.
Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
14
12
10
8
TOP
BOTTOM 1%
Duty Cycle
= 3.1A
Single Pulse
I
D
6
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
4
6. I
av
= Allowable avalanche current.
2
7.
∆
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
0
D = Duty cycle in avalanche =
t
av
·f
25
50
75
100
125
150
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
Starting T
, Junction Temperature (°C)
J
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
D
T/ Z
thJC
Fig 16.
Maximum Avalanche Energy
I
av
= 2
D
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
vs
.
T
emperature
7
IRFL024ZPbF
Driver Gate Drive
P.W.
P
.
W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/dt controlled by R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 17.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 18a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b.
Switching Time Waveforms
8
IRFL024ZPbF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PR
O
D
U
C
T MA
R
KING
THIS IS
A
N
I
RFL014
L
O
T CO
D
E
P
A
R
T
N
U
M
B
ER
IN
T
ER
N
A
T
I
O
NAL
RE
C
T
IFIER
L
O
GO
FL
0
14
314P
AXXXX
A=
A
S
SE
M
B
LY
SITE
CODE
DAT E
CODE
(YYWW)
YY =
Y
E
A
R
WW =
W
E
EK
B
O
T
T
O
M
T
O
P
P =
DE S IGNAT
E
S
LE
A
D-F
R
EE
PR
O
D
U
C
T (O
P
TI
O
NA
L
)
Notes:
9
IRFL024ZPbF
SOT-223 (TO-261AA)
T
a
pe & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
TR
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
12.10 (.475)
11.90 (.469)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
50.00 (1.969)
MIN.
18.40 (.724)
MAX.
NOTES :
1. OUTLINE
COMFORMS TO EIA-418-1.
2. CONTROLLING
DIMENSION: MILLIMETER..
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
14.40 (.566)
12.40 (.488)
4
3
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
10
