Infineon-Technologies-IRFL4310TRPBF
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PD – 95144
IRFL4310PbF
HEXFET
®
Power MOSFET
l
Surface Mount
l
Dynamic dv/dt Rating
l
Fast Switching
D
V
DSS
= 100V
l
Ease of Paralleling
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Lead-Free
R
DS(on)
= 0.20
Ω
G
I
D
= 1.6A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremel
y
l
ow on-resistanc
e
p
e
r
s
ilico
n
a
rea. Thi
s
b
enefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
know
n
f
or
,
p
rovide
s
t
h
e
d
esigne
r
w
it
h
a
n
e
xtremel
y
e
fficient
an
d
r
eliabl
e
d
evic
e
f
o
r
u
s
e
i
n
a
w
id
e
v
ariet
y
o
f
a
pplications.
The SOT-223 package is designed for surface-mount
usin
g
v
apo
r
p
hase
,
i
nfr
a
r
ed
,
o
r
w
av
e
s
olderin
g
t
echniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking.
Power dissipation
of 1.0W is possible in a typical surface mount application.
S O T -223
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 10V**
Continuous Drain Current, V
GS
@ 10V*
Continuous Drain Current, V
GS
@ 10V*
Pulsed Drain Current
2.2
1.6
A
1.3
13
P
D
@T
A
= 25°C
P
D
@T
A
= 25°C
Power Dissipation
(PCB Mount)**
Power Dissipation
(PCB Mount)*
Linear Derating Factor
(PCB Mount)*
Gate-to-Source Voltage
2.1
W
W
1.0
8.3
mW/°C
V
V
GS
± 20
47
E
AS
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
I
AR
1.6
E
AR
Repetitive Avalanche Energy
*
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
0.10
5.0
mJ
V/ns
°C
dv/dt
T
J
,
T
STG
-55 to
+ 150
Thermal Resistance
Parameter
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
93
48
Max.
120
60
Units
R
θ
JA
R
θ
JA
°C/W
* When
mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
1
04/22/04
IRFL4310PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Sourc
e
B
reakdow
n
V
oltage
Min. Typ. Max. Units
100 –––
–––
––– 0.12
––– V/°C
Reference to 25°C, I
D
= 1mA
Conditions
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
V
∆
V
(BR)DSS
/
∆
T
J
Breakdow
n
V
oltag
e
T
emp
.
C
oefficient
––– –––
0.20
Ω
V
GS
= 10V, I
D
= 1.6A
R
DS(on)
Stati
c
D
rain-to-Sourc
e
O
n-Resistance
V
GS(th)
g
fs
Gate Threshold Voltage
2.0
1.5
––– 4.0
––– –––
V
S
V
DS
= V
GS
, I
D
= 250µA
Forward Transconductance
V
DS
= 50V, I
D
= 0.80 A
––– ––– 25
––– –––
250
––– –––
100
––– –––
-100
V
DS
= 100V, V
GS
= 0V
I
DSS
I
GSS
Drain-to-Source Leakage Current
µA
nA
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
GS
= 20V
V
GS
= -20V
I
D
= 1.6A
Q
g
–––
–––
–––
–––
–––
–––
17
2.1 3.1
7.8 12
25
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
nC V
DS
= 80V
V
GS
= 10V, See Fig. 6 and 13
7.8 –––
18 –––
V
DD
= 50V
Ris
e
T
ime
I
D
= 1.6A
ns
pF
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
34
20
––– 330
–––
–––
R
G
= 6.2
Ω
–––
–––
R
D
= 31
Ω,
See Fig. 10
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
–––
–––
92 –––
54 –––
V
DS
= 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuou
s
S
ourc
e
C
urrent
(Bod
y
D
iode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
I
S
––– ––– 0.91
A
showing the
I
SM
Pulsed Source Current
(Body Diode)
integra
l
r
everse
–––
13
–––
p-
n
j
unctio
n
d
iode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.3
––– 72 110
––– 210 320
V
T
J
= 25°C, I
S
= 1.6A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.6A
ns
Q
rr
nC di/dt
= 100A/µs
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
1.6A, di/dt
≤
340A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
150°C
,
V
DD
= 25V, starting T
J
= 25°C, L = 9.2 mH
R
G
= 25
Ω
, I
AS
= 3.2A. (See Figure 12)
Pulse width
≤
300µs; duty cycle
≤
2%.
2
IRFL4310PbF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PR
O
D
U
C
T MA
R
KING
THIS IS
A
N IR
F
L014
L
O
T CODE
P
A
R
T
N
U
M
B
ER
IN
T
ER
N
A
T
I
O
N
A
L
RE
C
T
I
F
I
ER
L
O
GO
FL
0
14
314P
A
X
XXX
A =
A
S
SE
M
B
LY S
I
T
E
CODE
D
A
T
E
C
ODE
(YYWW)
YY =
YE
A
R
WW =
W
E
EK
B
O
T
T
O
M
T
O
P
P =
D
E
S
I
G
N
A
T
ES LE
A
D
–
F
REE
PR
O
DUCT (OP
T
I
O
N
A
L
)
8
IRFL4310PbF
SOT-223 (TO-261AA)
T
a
pe & Reel Information
4
.
1
0 (
.
1
61)
3
.
9
0 (
.
1
54)
0.35 (.013)
0.25 (.010)
1
.
8
5 (.072)
1
.
6
5 (.065)
2
.
0
5 (.080)
1
.
9
5 (.077)
TR
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED D
I
R
E
C T
I
O N
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
12.10 (.475)
11.90 (.469)
NO TE S
1. C
O NT RO LLIN G
D IM E N SIO N :
MILLIM E TER .
2. O
U TLIN E
C O N FO R M S
TO E
IA-481 EIA
-541.
:
&
3. E
AC H
O 330.00
(13.00) R
E EL
CO N TA IN S
2,500 D
E VIC ES .
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
M
A
X.
50.00 (1.969)
M
I
N .
18
.
4
0 (.724)
M
A
X.
N O
T
ES
:
1. O
UT LIN E
C O MFO R MS
TO EIA-418-1.
2. CO
N TR O LL
I
N G
D IM
E
N S
I
O
N
:
M ILLIM ETER ..
3. DIM
EN SIO N
M EAS UR ED
14.40 (.566)
12.40 (.488)
4
@
H
U
B.
4. IN
CLU D ES
FLA NG E
D ISTO R TIO N
@
O U
T
ER
ED G E .
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
9
