Infineon-Technologies-IRFML8244TRPBF
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PD –
97587A
IRFML8244TRPbF
HEXFET
®
Power MOSFET
V
DS
25
V
V
V
GS Max
± 20
R
DS(on) max
(@V
GS
= 10V)
24
41
m
R
DS(on) max
(@V
GS
= 4.5V)
TM
m
Micro3 (SOT-23)
IRFML8244TRPbF
Application(s)
Load/ System Switch
Features and Benefits
Features
Benefits
Low R
DS(on)
(
24m
)
Lower switching losses
Industry-standard pinout
Multi-vendor compatibility
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
results in
Easier manufacturing
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
Max.
25
Units
V
V
DS
Drain-Source Voltage
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
5.8
4.6
A
24
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
1.25
0.80
0.01
± 20
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
W
W/°C
V
V
GS
Gate-to-Source Voltage
T
J,
T
STG
-55 to
+ 150
Junction and Storage Temperature Range
°C
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
100
Units
R
JA
Junction-to-Ambient
°C/W
R
JA
–––
99
Junction-to-Ambient (t<10s)
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes
through
are on page 10
1
02/29/12
IRFML8244TRPbF
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
10
–––
0.02
20
–––
–––
24
V
V
GS
= 0V, I
D
= 250
μ
A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
V/°C Reference
to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 5.8A
R
DS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
m
32
41
V
GS
= 4.5V, I
D
= 4.6A
V
GS(th)
I
DSS
1.7
–––
–––
–––
–––
1.6
–––
5.4
1.0
0.81
2.7
2.1
9.0
2.9
430
110
49
2.35
1.0
V
V
V
V
DS
= V
GS
, I
D
= 10
μ
A
DS
= 20V, V
GS
= 0V
Drain-to-Source Leakage Current
μ
A
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
DS
= 20V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
V
GS
= 20V
GS
= -20V
nA
V
R
G
gfs
Q
g
S
V
DS
= 10V, I
D
= 5.8A
I
D
= 5.8A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
V
DS
=13V
nC
ns
V
GS
= 10V
V
DD
=13V
I
D
= 1.0A
G
= 6.8
V
GS
= 10V
Rise Time
t
d(off)
t
f
Turn-Off Delay Time
R
Fall Time
C
iss
C
oss
C
rss
Input Capacitance
V
V
GS
= 0V
Output Capacitance
DS
= 10V
pF
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source – Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
Min. Typ. Max.
Units
Conditions
MOSFET symbol
I
S
D
–––
–––
–––
1.25
(Body Diode)
showing the
G
A
I
SM
Pulsed Source Current
integral reverse
S
–––
24
(Body Diode)
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
–––
–––
–––
–––
11
1.2
17
V
T
J
= 25°C, I
S
= 5.8A, V
GS
= 0V
Reverse Recovery Time
Reverse Recovery Charge
ns T
J
= 25°C, V
R
= 20V, I
F
=5.8A
di/dt = 100A/
μ
s
nC
Q
rr
4.2
6.3
2
IRFML8244TRPbF
100
10
1
100
10
1
VGS
15V
10V
4.5V
4.0V
3.8V
3.5V
3.3V
3.0V
VGS
15V
10V
4.5V
4.0V
3.8V
3.5V
3.3V
3.0V
TOP
TOP
BOTTOM
BOTTOM
3.0V
3.0V
60
μ
s PULSE WIDTH
60
μ
s PULSE WIDTH
Tj = 25°C
Tj = 150°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
100
10
1.6
1.4
1.2
1.0
0.8
0.6
I
= 5.8A
D
V
= 10V
GS
T
= 150°C
J
T
= 25°C
J
1
V
= 15V
DS
60
μ
s PULSE WIDTH
0.1
2.0
2.5
3.0
3.5
4.0
4.5
-60 -40 -20
0
20 40 60 80
100 12
0
1
40 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
3
IRFML8244TRPbF
10000
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I =
5.8A
D
C
C
C
+ C
, C
SHORTED
ds
iss
gs
gd
= C
rss
oss
gd
= C
+ C
V
= 20V
= 13V
= 5.0V
ds
gd
DS
V
DS
1000
100
10
V
DS
C
C
iss
6.0
oss
rss
4.0
C
2.0
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
1
2
3
4
5
6
7
8
V
Q ,
Total Gate Charge (nC)
DS
G
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
μ
sec
T
= 150°C
1msec
10msec
J
T
= 25°C
J
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
, Source-to-Drain Voltage (V)
0.10
1.0
10
100
V
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
4
IRFML8244TRPbF
6
5
4
3
2
1
0
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
V
GS
Pulse Width
µs
Duty Factor
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
T
, Ambient Temperature (°C)
A
10%
Fig 9.
Maximum Drain Current vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b.
Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRFML8244TRPbF
80
50
45
40
35
30
25
20
15
10
5
I
= 5.8A
D
70
60
50
40
Vgs = 4.5V
T
= 125°C
J
30
20
10
0
Vgs = 10V
T
= 25°C
J
0
2
4
6
8
10 12 14 16 18 20
0
5
10
15
20
25
I ,
Drain Current (A)
D
V
Gate -to -Source Voltage
(V)
GS,
Fig 13.
Typical On-Resistance vs. Drain
Fig 12.
Typical On-Resistance vs. Gate
Current
Voltage
Current Regulator
Same Type as D.U.
T
.
50K
Q
Q
G
.2
F
12V
.3
F
V
GS
+
Q
V
GS
GD
DS
D.U.
T
.
–
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 14a.
Basic Gate Charge Waveform
Fig 14b.
Gate Charge Test Circuit
6
IRFML8244TRPbF
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
1000
800
600
400
200
0
I
I
= 10
μ
A
D
D
= 250
μ
A
-75 -50 -25
0
25 50 75
100 125 150
1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
T ,
Temperature ( °C )
J
Time (sec)
Fig 16.
Typical Power vs. Time
Fig 15.
Typical Threshold Voltage vs.
Junction Temperature
7
IRFML8244TRPbF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
5
6
MILLIMETERS
INCHES
SYMBOL
D
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
MAX
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MIN
MAX
A
A1
A2
b
c
D
E
E1
e
A
0.0004
A2
C
3
E
6
E1
0.15 [0.006]
M
C
B A
1
2
0.10 [0.004]
C
A1
3X
b
e
0.20 [0.008]
M
C
B A
B
5
NOTES:
e1
e1
L
L1
L2
H
4
L1
REF
BSC
8
Recommended Footprint
c
0
0.972
0.950
2.742
L2
0.802
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENS
I
O
NS ARE SHOWN IN M
I
L
LIMETERS [INCHES].
3. CONTROLL
I
N
G DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
3X L
7
1.900
6. D
I
M
ENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. D
I
M
ENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR
I
N
T
ERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. D
I
M
ENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3 (SOT-23/TO-236AB) Part Marking Information
DATE CODE MARKING INSTRUCTIONS
8
IRFML8244TRPbF
Micro3
T
a
pe & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
8.3 ( .326 )
3.45 ( .136 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
9
IRFML8244TRPbF
Orderable part number
Package Type
Micro3 (SOT-23)
Standard Pack
Note
Form
Tape and Reel
Quantity
IRFML8244TRPbF
3000
Qualification information
†
Cons ume
r
††
(per
J
E
D
E C JE S D47F
†††
g
u
i
d
e
l
in
e
s )
Qualification le
v
e
l
MS
L
1
Moisture Sensiti
v
i
ty Le
v
e
l
RoHS compliant
Micro3 (SOT-23)
(
p
er
I
P
C
/
J
E DE C J-S
T
D
-020D
†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Pulse width
400
μ
s; duty cycle
2%.
Surface mounted on 1 in square Cu board.
Refer to
application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
10
