Infineon-Technologies-IRFP3703PBF
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PD – 95481
SMPS MOSFET
IRFP3703PbF
HEXFET
®
Power MOSFET
Applications
l
Synchronous Rectification
l
Active ORing
V
DSS
30V
R
DS(on)
max
I
D
210A
0.0028
Ω
l
Lead-Free
Benefits
l
Ultra Low On-Resistance
l
Low Gate Impedance to Reduce
Switching
Losses
l
Fully Avalanche Rated
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
210
100
1000
Units
A
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
Power Dissipation
230
W
Power Dissipation
3.8
Linear Derating Factor
1.5
W/°C
V
V
GS
Gate-to-Source Voltage
± 20
dv/dt
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
5.0
V/ns
°C
T
J,
T
STG
-55 to
+ 175
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.65
–––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
Typical SMPS Topologies
l
Forward and Bridge Converters with Synchronous Rectification for Telecom and
Industrial Applications
l
Offline High Power AC/DC
Convertors using
Synchronous Rectification
Notes
through
are on page 8
1
7/16/04
IRFP3703PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
GS
= 0V, I
D
= 250µA
0.028 ––– V/°C
Reference to 25°C, I
D
= 1mA
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
–––
2.0
––– –––
V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
2.3
2.8
2.8
3.9
V
GS
= 10V, I
D
= 76A
m
Ω
R
DS(on)
V
GS(th)
I
DSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
GS
= 7.0V, I
D
= 76A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
––– 4.0
V
––– ––– 20
––– –––
250
––– –––
200
––– –––
-200
µA
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
I
GSS
nA
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
V
DS
= 24V, I
D
= 76A
I
D
= 76A
g
fs
150 –––
–––
––– 209
–––
S
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
62 –––
42 –––
18 –––
nC V
DS
= 24V
V
GS
= 10V,
V
DD
= 15V, V
GS
= 10V
I
D
= 76A
––– 123
–––
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
–––
–––
53 –––
24 –––
R
G
= 1.8
Ω
V
GS
= 10V
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
––– 8250
–––
––– 3000
–––
––– 290
–––
––– 10360
–––
––– 3060
–––
––– 2590
–––
V
GS
= 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
V
DS
= 25V
pF
ƒ = 1.0MHz
V
GS
= 0V,
V
DS
= 1.0V,
ƒ = 1.0MHz
V
GS
= 0V,
V
DS
= 24V,
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 24V
ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
1700
76
Units
mJ
A
E
AS
I
AR
–––
–––
–––
E
AR
Repetitive Avalanche Energy
23
mJ
Diode Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
I
S
––– –––
––– –––
210
showing the
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
1000
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– 0.8
1.3
––– 80 120
––– 185 275
V
T
J
= 25°C, I
S
= 76A, V
GS
= 0V
ns
T
J
= 25°C, I
F
= 76A, V
DS
= 16V
Q
r
r
nC di/dt
= 100A/µs
2
IRFP3703PbF
10000
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
T =
175 C
J
20µs PULSE WIDTH
°
°
T =
25 C
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
2.0
10000
1000
100
260A
=
I
D
1.5
1.0
0.5
0.0
°
T =
25 C
J
°
T =
175 C
J
V
= 15V
DS
20µs PULSE WIDTH
V
=
1
0V
GS
10
4.0
5.0
6.0
7.0
8.0 9.0
10.0
-60 -40 -20
0
20 40 60 80
100 120 140 160
°
V
, Gate-to-Source Voltage (V)
GS
T ,
Junction Temperature(
C)
J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRFP3703PbF
20
16
12
8
14000
I
D
= 76A
V
= 0V,
f = 1MHz
gd ,
ds
GS
V
= 24V
C
= C
+ C
C
SHORTED
DS
iss
gs
C
= C
gd
12000
10000
8000
6000
4000
2000
0
rss
C
= C
+ C
ds
oss
gd
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
40
80
120 160 200 240 280 320
1
10
100
Q ,
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
10000
1000
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T =
175 C
J
10us
100us
1ms
°
T =
25 C
J
1
°
T =
25 C
C
10ms
°
T =
175 C
Single Pulse
J
V
= 0 V
GS
2.0
10
0.1
0.0
1
10
100
0.4
0.8
1.2
1.6
2.4
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
4
IRFP3703PbF
R
D
250
200
150
100
50
V
DS
LIMITED BY PACKAGE
V
GS
D.U.T.
R
G
+
V
DD
–
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
T ,
Case Temperature
( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
2
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =
t /
t
1
2. Peak T
=
P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRFP3703PbF
6000
5000
4000
3000
2000
1000
0
15V
I
D
TOP
31A
54A
DRIVER
+
BOTTOM 76A
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
20V
0.01
Ω
t
p
Fig 12a.
Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
V
(BR)DSS
°
Starting T
, Junction Temperature (
C)
J
t
p
Fig 12c.
Maximum Avalanche Energy
Vs. Drai
n
C
urrent
I
AS
Fig 12b.
Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.
T
.
50K
Ω
Q
G
.2
µ
F
12V
.3
µ
F
10 V
+
V
DS
D.U.
T
.
–
Q
Q
GD
GS
V
GS
V
3mA
G
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
6
IRFP3703PbF
Peak Diode Recovery dv/dt Test Circuit
+
–
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.T
+
–
–
+
R
G
•
dv/dt controlled by R
G
+
–
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
V
DD
Driver Gate Drive
P.W.
P
.
W.
Period
Period
D =
V
=10V
*
GS
D.U.
T
. I
W
aveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 14.
For N-Channel
HEXFET
®
Power MOSFET
7
IRFP3703PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EX
A
M
P
LE: THIS
IS
A
N
I
RFPE30
W
I
T
H
A
S
SE
M
B
LY
P
A
R
T NU
M
B
ER
IN
T
ER
N
A
T
I
O
NAL
RE
C
T
I
F
I
ER
L
O
GO
L
O
T CODE 5657
IRFPE30
035H
57
A
S
SE
M
B
LED
O
N WW 35, 2000
IN THE
A
S
SE
M
B
LY LINE
“
H
”
56
D
A
T
E
C
ODE
YE
A
R 0 =
2
000
WE
E
K
3
5
Note:
“P” in assembly line
position indicates “Lead-Free”
A
S
SE
M
B
LY
L
O
T CO
D
E
LINE H
Notes:
Repetitive rating;
pulse width limited by
Pulse width
≤
300µs; duty cycle
≤
2%.
max. junction temperature.
ꢀ
C
oss
eff. is a fixed capacitance that gives the same charging time
Starting T
J
= 25°C, L = 0.6mH
R
G
= 25
Ω
, I
AS
= 76A.
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Calculated continuous current based on maximum allowable
I
SD
≤
76A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
175°C
,
junction temperature. Package limitation current is 90A
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
8
Note: For
the most current drawings please refer to the IR website at:
