Infineon-Technologies-IRFP4127PBF
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IRFP4127PbF
HEXFET
®
Power MOSFET
Application
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
V
DSS
200V
R
DS(on) typ.
17m
21m
Hard Switched and High Frequency Circuits
max
I
D
75A
Benefits
Improved Gate,
Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
S
D
G
TO-247AC
G
D
S
Gate
Drain
Source
Standard Pack
Form
Orderable Part Number
Base part number
Package Type
Quantity
IRFP4127PbF
TO-247AC
Tube
25
IRFP4127PbF
Parameter
Max.
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
75
53
300
341
2.3
± 20
57
A
P
D
@T
C
= 25°C
Maximum Power Dissipation
Linear Derating Factor
W
W/°C
V
V
GS
Gate-to-Source Voltage
dv/dt
Peak Diode Recovery dv/dt
V/ns
T
J
T
STG
Operating Junction and
-55 to
+ 175
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
°C
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
E
AS (Thermally limited)
244
Single Pulse Avalanche Energy
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
0.24
–––
Max.
0.4
Units
R
JC
R
CS
R
JA
Case-to-Sink, Flat Greased Surface
°C/W
–––
40
Junction-to-Ambient
1
© 2015 International Rectifier
March 09, 2015
IRFP4127PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
Max. Units
200 ––– –––
––– 0.23 ––– V/°C
Reference to 25°C, I
D
= 5mA
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
R
DS(on)
–––
3.0 ––– 5.0
––– –––
20
17
21
V
GS
= 10V, I
D
= 44A
m
V
GS(th)
V
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 200 V, V
GS
= 0V
I
DSS
Drain-to-Source Leakage Current
µA
––– –––
250
V
DS
=200V,V
GS
= 0V,T
J
=125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
––– ––– 100
––– –––
-100
V
GS
= 20V
GS
= -20V
I
GSS
R
G
nA
V
–––
3.0
–––
Dynamic Electrical
Characteristics @ T
J
= 25°C (unless otherwise specified)
gfs
Q
g
Forward Transconductance
Total Gate Charge
45
––– –––
S
V
DS
= 50V, I
D
=44A
I
D
= 44A
––– 100 150
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Q
g
– Q
gd
)
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
30
31
69
17
18
–––
–––
–––
–––
–––
V
DS
= 100V
nC
V
GS
= 10V
I
D
= 44A, V
DS
=0V, V
GS
= 10V
V
DD
= 100V
I
D
= 44A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
–––
–––
56
22
–––
–––
R
G
= 2.7
V
GS
= 10V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 5380 –––
––– 410 –––
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
–––
86
–––
pF
V
GS
= 0V, VDS = 0V to 160V
C
oss eff.(ER)
C
oss eff.(TR)
Diode Characteristics
Parameter
Effective Output Capacitance (Energy Related)
––– 360 –––
See Fig.11
Output Capacitance (Time Related)
––– 590 –––
V
GS
= 0V, VDS = 0V to 160V
Min. Typ.
Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
S
––– –––
75
A
G
I
SM
––– ––– 300
––– ––– 1.3
S
V
SD
Diode Forward Voltage
V
T
J
= 25°C,I
S
= 44A,V
GS
= 0V
––– 136 –––
––– 139 –––
––– 458 –––
––– 688 –––
T
J
= 25°C
V
DD
= 100V
I
F
= 44A,
t
rr
Reverse Recovery Time
ns
T
J
= 125°C
T
J
= 25°C
di/dt = 100A/µs
Q
rr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
T
J
= 125°C
I
RRM
–––
8.3
–––
T
J
= 25°C
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Recommended max
EAS limit, starting T
J
= 25°C, L = 0.25mH, R
G
= 25
, I
AS
= 44A, V
GS
=10V.
I
SD
4A, di/dt
A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
When mounted on 1″ square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994
.
.
R
is measured at T
J
approximately 90°C
2
© 2015 International Rectifier
March 09, 2015
IRFP4127PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
1
4.5V
1
0.1
0.01
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 175°C
4.5V
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1000
I
= 44A
V
= 50V
D
DS
V
= 10V
60µs PULSE WIDTH
GS
100
10
1
T
= 175°C
J
T
= 25°C
J
0.1
3.0
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
T
0
20 40 60 80
100 120 140 160 180
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 4.
Normalized On-Resistance vs. Temperature
Fig 3.
Typical Transfer Characteristics
16
8000
V
= 0V,
= C
f = 1 MHZ
GS
I
= 44A
D
C
C
C
+ C
, C
SHORTED
iss
gs
gd
ds
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
= C
rss
oss
gd
= C
+ C
12
8
ds
gd
6000
4000
2000
0
C
iss
4
C
oss
0
C
rss
0
20
40
60
80
100
120
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
G
V
DS
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
© 2015 International Rectifier
IRFP4127PbF
1000
100
10
V
= 50V
DS
100µsec
1msec
60µs PULSE WIDTH
100
10
OPERATION IN
THIS AREA
LIMITED BY RDS(on)
T
= 175°C
J
1
T
= 25°C
J
10msec
DC
1
0.1
0.01
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
3.0
4.0
5.0
6.0
7.0
8.0
0.1
1
10
100
V
, Gate-to-Source Voltage (V)
GS
V
, Drain-to-Source Voltage (V)
DS
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode Forward Voltage
80
260
Id = 5mA
60
40
20
0
240
220
200
180
25
50
75
100
125
150
175
-60 -40 -20
0
20 40 60 80
100120140160180
T ,
Temperature ( °C )
J
T
, CaseTemperature (°C)
C
Fig 10.
Drain-to–Source Breakdown Voltage
Fig 9.
Maximum Drain Current vs. Case Temperature
8.0
1200
I
D
TOP
7.7A
12.6A
1000
800
600
400
200
0
6.0
4.0
2.0
0.0
BOTTOM
44A
0
40
80
120
160
200
25
50
75
100
125
150
175
V
Drain-to-Source Voltage (V)
Starting T
, Junction Temperature (°C)
DS,
J
Fig 11.
Typical C
oss
Stored Energy
www.irf.com
© 2015 International Rectifier
Fig 12.
Maximum Avalanche Energy vs. Drain Current
4
IRFP4127PbF
1
D = 0.50
0.1
Ri (°C/W)
0.02
0.20
0.10
0.05
I (sec)
0.000019
0.08333 0.000078
0.181667 0.001716
0.11333 0.008764
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart = 25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14.
Typical Avalanche Current vs. Pulse Width
250
200
150
100
50
TOP
Single Pulse
BOTTOM 1%
Duty Cycle
= 44A
I
D
0
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
© 2015 International Rectifier
March 09, 2015
IRFP4127PbF
50
40
30
20
10
0
6.0
5.0
4.0
3.0
2.0
1.0
I
I
I
= 1.0A
D
D
D
= 1.0mA
= 250µA
I
= 29A
F
V
T
T
= 100V
= 125°C
= 25°C
R
J
J
100 200 300 400 500 600 700 800 900
1000
-75 -50 -25
0
25 50 75
100 125 150 175
, Temperature ( °C )
di /
dt – (A / µs)
f
T
J
Fig 16.
Threshold Voltage vs. Temperature
Fig 17.
Typical Recovery Current vs. dif/dt
3000
60
2500
2000
1500
1000
500
50
40
30
20
I
= 29A
I
= 44A
F
F
V
T
T
= 100V
V
T
T
= 100V
R
R
10
0
= 125°C
= 25°C
= 125°C
= 25°C
J
J
J
J
0
100 200 300 400 500 600 700 800 900
1000
100 200 300 400 500 600 700 800 900
1000
di /
dt – (A / µs)
f
di /
dt – (A / µs)
f
Fig 19.
Typical Stored Charge vs. dif/dt
Fig 18.
Typical Recovery Current vs. dif/dt
3000
2500
2000
1500
1000
500
I
= 44A
F
V
T
T
= 100V
= 125°C
= 25°C
R
J
J
0
100 200 300 400 500 600 700 800 900
1000
di /
dt – (A / µs)
f
Fig 20.
Typical Stored Charge vs. dif/dt
6
© 2015 International Rectifier
March 09, 2015
IRFP4127PbF
Fig 21.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
20V
I
0.01
t
p
AS
Fig 22a.
Unclamped Inductive Test Circuit
Fig 22b.
Unclamped Inductive Waveforms
Fig 23a.
Switching Time Test Circuit
Fig 23b.
Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 24b.
Gate Charge Waveform
Fig 24a.
Gate Charge Test Circuit
7
© 2015 International Rectifier
March 09, 2015
IRFP4127PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
E
A
A
“A”
E2
/
2
A2
Q
E2
2X
D
B
L1
“A”
L
SEE
V
I
EW “B”
2x b2
3x b
Ø .010
B A
c
b4
A1
e
2x
LEAD TIP
Ø P
Ø
.
010 B
A
–
A
–
S
D1
V
I
E
W
:
“
B”
THERMAL PAD
PLATING
BASE METAL
E1
(c)
Ø
.
010
B A
V
I
E
W: “A” – “A”
(b, b2, b4)
SECT
I
ON: C-C, D-D, E-E
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS
IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
135H
57
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE “H”
56
DATE CODE
YEAR 1 =
2001
WEEK 35
ASSEMBLY
LOT CODE
Note: “P” in assembly line position
indicates “Lead-Free”
LINE H
TO-247AC package is not recommended for Surface Mount Application.
8
© 2015 International Rectifier
March 09, 2015
IRFP4127PbF
Qualification Information
†
Qualification Level
Industrial
(per JEDEC JESD47F)
††
TO-247AC
N/A
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com/product-info/reliability/
†† Applicable
version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
9
© 2015 International Rectifier
March 09, 2015
