Infineon-Technologies-IRFP4137PBF
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IRFP4137PbF
HEXFET
®
Power MOSFET
Application
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
V
DSS
300V
R
DS(on) typ.
56m
69m
Hard Switched and High Frequency Circuits
max
I
D
38A
Benefits
Improved Gate,
Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
S
D
G
TO-247AC
G
D
S
Gate
Drain
Source
Standard Pack
Form
Orderable Part Number
Base part number
Package Type
Quantity
IRFP4137PbF
TO-247AC
Tube
25
IRFP4137PbF
Parameter
Max.
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
38
27
A
152
341
2.3
P
D
@T
C
= 25°C
Maximum Power Dissipation
Linear Derating Factor
W
W/°C
V
V
GS
Gate-to-Source Voltage
± 20
8.9
dv/dt
Peak Diode Recovery dv/dt
V/ns
T
J
T
STG
Operating Junction and
-55 to
+ 175
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
°C
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
E
AS (Thermally limited)
541
Single Pulse Avalanche Energy
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
0.24
–––
Max.
0.44
–––
40
Units
R
JC
R
CS
R
JA
Case-to-Sink, Flat Greased Surface
°C/W
Junction-to-Ambient
1
© 2012 International Rectifier
October 30, 2012
IRFP4137PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
Max. Units
300 ––– –––
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
V
GS
= 0V, I
D
= 250µA
––– 0.24 ––– V/°C
Reference to 25°C, I
D
= 3.5mA
V
(BR)DSS
/
T
J
R
DS(on)
–––
3.0 ––– 5.0
––– –––
20
56
69
V
GS
= 10V, I
D
= 24A
m
V
GS(th)
V
V
DS
= V
GS
, I
D
= 250µA
V
DS
=300 V, V
GS
= 0V
I
DSS
Drain-to-Source Leakage Current
µA
––– –––
250
V
DS
=300V,V
GS
= 0V,T
J
=125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
––– ––– 100
––– –––
-100
V
GS
= 20V
GS
= -20V
I
GSS
R
G
nA
V
–––
1.3
–––
Dynamic Electrical
Characteristics @ T
J
= 25°C (unless otherwise specified)
gfs
Q
g
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
45
––– –––
S
V
DS
= 50V, I
D
=24A
I
D
= 24A
–––
–––
–––
–––
–––
83
28
26
18
23
125
42
Q
gs
Q
gd
t
d(on)
t
r
nC V
DS
= 150V
GS
= 10V
39
V
–––
–––
V
DD
= 195V
I
D
= 24A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
–––
–––
34
20
–––
–––
R
G
= 2.2
V
GS
= 10V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 5168 –––
––– 300 –––
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
–––
77
–––
pF
V
GS
= 0V, VDS = 0V to 240V
C
oss eff.(ER)
C
oss eff.(TR)
Diode Characteristics
Parameter
Effective Output Capacitance (Energy Related)
––– 196 –––
See Fig.11
Output Capacitance (Time Related)
––– 265 –––
V
GS
= 0V, VDS = 0V to 240V
Min. Typ.
Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
S
––– –––
40
A
G
I
SM
––– ––– 160
––– –––
1.3
S
V
SD
Diode Forward Voltage
V
T
J
= 25°C,I
S
= 24A,V
GS
= 0V
––– 302 –––
––– 379 –––
––– 1739 –––
––– 2497 –––
T
J
= 25°C
V
DD
= 255V
I
F
= 24A,
t
rr
Reverse Recovery Time
ns
T
J
= 125°C
T
J
= 25°C
di/dt = 100A/µs
Q
rr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
T
J
= 125°C
I
RRM
–––
13
–––
T
J
= 25°C
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Recommended max
EAS limit, starting T
J
= 25°C, L = 2.05mH, R
G
= 50
, I
AS
= 24A, V
GS
=10V.
I
SD
24A, di/dt
1771A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
When mounted on 1″ square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994
.
.
R
is measured at T
J
approximately 90°C
2
© 2012 International Rectifier
October 30, 2012
IRFP4137PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM
BOTTOM
5.0V
1
1
5.0V
0.1
0.01
60µs
Tj = 25°C
PULSE WIDTH
60µs
PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1000
I
= 24A
D
V
= 10V
GS
100
T
= 175°C
J
T
= 25°C
J
10
1
V
= 50V
DS
60µs PULSE WIDTH
0.1
-60
-20
T
20
60
100
140
180
2
4
6
8
10
12
14
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4.
Normalized On-Resistance vs. Temperature
Fig 3.
Typical Transfer Characteristics
100000
14.0
V
C
= 0V,
f = 1 MHZ
GS
I
= 24A
= C
+ C
, C
SHORTED
D
iss
gs
gd ds
12.0
10.0
8.0
C
= C
rss
gd
V
= 240V
= 150V
DS
C
= C
+ C
oss
ds
gd
10000
1000
100
V
DS
C
VDS= 60V
iss
C
6.0
oss
C
4.0
rss
2.0
10
0.0
1
10
100
1000
0
20
40
Q , Total
Gate Charge (nC)
G
60
80
100
120
V
, Drain-to-Source Voltage (V)
DS
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
© 2012 International Rectifier
October 30, 2012
IRFP4137PbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
T
= 25°C
J
1msec
10msec
DC
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode Forward Voltage
42
370
Id = 3.5mA
360
35
28
21
14
7
350
340
330
320
310
300
290
280
270
0
25
50
75
100
125
150
175
-60
-20
20
T ,
Temperature ( °C )
J
60
100
140
180
T
, Case Temperature (°C)
C
Fig 10.
Drain-to–Source Breakdown Voltage
Fig 9.
Maximum Drain Current vs. Case Temperature
9.0
6.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
5.0
4.0
3.0
2.0
1.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
-50
0
50 100
150 200 250 300 350
-75
-25
25
75
125
175
225
T
, Temperature ( °C )
J
V
Drain-to-Source Voltage (V)
DS,
Fig 11.
Typical C
oss
Stored Energy
www.irf.com
© 2012 International Rectifier
Fig 12.
Threshold Voltage vs. Temperature
October 30, 2012
4
IRFP4137PbF
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
60
50
40
30
20
10
I
= 24A
I
= 16A
F
F
V
= 255V
V
= 255V
R
R
50
40
30
20
10
T =
25°C
T =
25°C
J
J
T =
125°C
J
T =
125°C
J
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt
(A/µs)
di /dt
(A/µs)
F
F
Fig 14.
Typical Recovery Current vs. dif/dt
Fig 15.
Typical Recovery Current vs. dif/dt
3500
5000
4500
4000
3500
3000
2500
2000
1500
1000
I
= 16A
I
= 24A
F
F
V
= 255V
V
= 255V
R
R
3000
2500
2000
1500
1000
T =
25°C
T =
25°C
J
J
T =
125°C
J
T =
125°C
J
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt
(A/µs)
di /dt
(A/µs)
F
F
Fig 16.
Typical Stored Charge vs. dif/dt
www.irf.com
© 2012 International Rectifier
Fig 17.
Typical Stored Charge vs. dif/dt
October 30, 2012
5
IRFP4137PbF
Fig 18.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
20V
I
0.01
t
p
AS
Fig 19a.
Unclamped Inductive Test Circuit
Fig 19b.
Unclamped Inductive Waveforms
Fig 20a.
Switching Time Test Circuit
Fig 20b.
Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 21b.
Gate Charge Waveform
Fig 21a.
Gate Charge Test Circuit
6
© 2012 International Rectifier
October 30, 2012
IRFP4137PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
E
A
A
“A”
E2
/
2
A2
Q
E2
2X
D
B
L1
“A”
L
SEE
V
I
EW “B”
2x b2
3x b
Ø .010
B A
c
b4
A1
e
2x
LEAD TIP
Ø P
Ø
.
010 B
A
–
A
–
S
D1
V
I
E
W
:
“
B”
THERMAL PAD
PLATING
BASE METAL
E1
(c)
Ø
.
010
B A
V
I
E
W: “A” – “A”
(b, b2, b4)
SECT
I
ON: C-C, D-D, E-E
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS
IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
135H
57
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE “H”
56
DATE CODE
YEAR 1 =
2001
WEEK 35
ASSEMBLY
LOT CODE
Note: “P” in assembly line position
indicates “Lead-Free”
LINE H
TO-247AC package is not recommended for Surface Mount Application.
7
© 2012 International Rectifier
October 30, 2012
IRFP4137PbF
Qualification Information
†
Qualification Level
Industrial
(per JEDEC JESD47F)
††
TO-247AC
N/A
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com/product-info/reliability/
†† Applicable
version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
8
© 2012 International Rectifier
October 30, 2012
