Infineon-Technologies-IRFP4227PBF
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PD – 97070A
IRFP4227PbF
PDP SWITCH
Features
Key Parameters
l
Advanced Process Technology
V
DS
max
200
240
21
V
V
l
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
Low E
PULSE
Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
V
DS (Avalanche)
typ.
R
DS(ON)
typ. @ 10V
I
RP
max @ T
C
= 100°C
T
J
max
l
m
130
175
A
°C
l
l
Low Q
G
for Fast Response
High Repetitive Peak Current Capability for
Reliable Operation
D
D
l
Short Fall & Rise Times for Fast Switching
l
175°C Operating Junction Temperature for
S
Improved Ruggedness
Repetitive Avalanche Capability for Robustness
D
G
G
l
and Reliability
S
TO-247AC
G
D
S
Gate
Drain
Source
Description
This
HEXFET
®
Power MOSFET
is specifically designed for Sustain; Energy Recovery & Pass switch
application
s
i
n
P
lasm
a
D
ispla
y
P
anels. Thi
s
MOSFE
T
utilize
s
t
h
e
l
ates
t
p
rocessin
g
t
echnique
s
t
o
a
chieve
low on-resistance per silicon area and low E
PULSE
rating. Additional features of this
MOSFET
are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this
MOSFET
a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Max.
±30
Parameter
Gate-to-Source Voltage
Units
V
GS
V
A
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
65
46
260
I
RP
@ T
C
= 100°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
130
Repetitive Peak Current
330
Power Dissipation
W
190
Power Dissipation
2.2
Linear Derating Factor
W/°C
°C
T
J
-40 to
+ 175
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lb in (1.1N m)
N
Thermal Resistance
Parameter
Typ.
Max.
0.45
–––
62
Units
Junction-to-Case
R
θ
R
θ
R
θ
–––
0.50
–––
JC
CS
JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Notes
through
are on page 8
1
09/14/07
IRFP4227PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
= 1mA
Parameter
Min. Typ. Max.
Units
BV
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
200
–––
–––
3.0
–––
170
21
–––
V
V
/ T
∆
J
∆Β
––– mV/°C
D
DSS
V
GS
= 10V, I
D
= 46A
R
DS(on)
V
GS(th)
25
m
Ω
V
V
DS
= V
GS
, I
D
= 250µA
–––
-13
–––
–––
–––
–––
–––
70
5.0
∆
V
GS(th)
/
∆
T
J
I
DSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
49
––– mV/°C
V
DS
= 200V, V
GS
= 0V
20
1.0
µA
mA
nA
V
DS
= 200V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
GS
= -20V
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
-100
–––
98
V
V
DS
= 25V, I
D
= 46A
g
fs
Q
g
Q
gd
t
d(on)
t
r
S
V
DD
= 100V, I
D
= 46A, V
GS
= 10V
–––
–––
–––
–––
–––
–––
100
nC
Gate-to-Drain Charge
Turn-On Delay Time
23
–––
–––
–––
–––
–––
–––
V
DD
= 100V, V
GS
= 10V
33
I
D
= 46A
Rise Time
20
ns
t
d(off)
t
f
R
G
= 2.5
Ω
See Fig. 22
Turn-Off Delay Time
21
Fall Time
31
t
st
V
DD
= 160V, V
GS
= 15V, R
G
= 4.7
Ω
L = 220nH, C= 0.4µF,
V
GS
= 15V
DS
= 160V, R
G
= 4.7
Ω,
T
J
= 25°C
Shoot Through Blocking Time
–––
ns
µJ
–––
–––
570
910
–––
–––
E
PULSE
V
Energy per Pulse
L = 220nH, C= 0.4µF,
V
GS
= 15V
V
DS
= 160V, R
G
= 4.7
Ω,
T
J
= 100°C
V
GS
= 0V
C
iss
Input Capacitance
––– 4600 –––
V
DS
= 25V
C
oss
C
rss
Output Capacitance
–––
–––
–––
–––
460
91
–––
–––
–––
–––
pF
ƒ = 1.0MHz,
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
V
GS
= 0V, V
DS
= 0V to 160V
C
oss
eff.
L
D
360
5.0
D
S
Between lead,
nH 6mm
(0.25in.)
from package
G
L
S
Internal Source Inductance
–––
13
–––
and center of die contact
Avalanche Characteristics
Typ.
–––
–––
240
–––
Max.
140
33
Parameter
Units
mJ
mJ
V
E
AS
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
Avalanche Current
E
AR
V
DS(Avalanche)
I
AS
–––
39
A
Diode Characteristics
Conditions
Parameter
Min. Typ. Max.
Units
I
S
@ T
C
= 25°C
I
SM
MOSFET symbol
Continuous Source Current
–––
–––
65
showing the
(Body Diode)
A
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
260
T
J
= 25°C, I
S
= 46A, V
GS
= 0V
T
J
= 25°C, I
F
= 46A, V
DD
= 50V
di/dt = 100A/µs
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
100
430
1.3
150
640
V
ns
nC
Q
rr
2
IRFP4227PbF
1000
100
10
VGS
15V
10V
8.0V
7.0V
VGS
15V
10V
8.0V
7.0V
TOP
TOP
BOTTOM
BOTTOM
100
7.0V
7.0V
10
60µs PULSE WIDTH
≤
Tj = 175°C
≤
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
100.0
10.0
1.0
4.0
3.0
2.0
1.0
0.0
I
= 46A
V
= 25V
D
DS
≤
60µs PULSE WIDTH
V
= 10V
GS
T
= 175°C
J
T
= 25°C
J
0.1
3.0
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20 40 60 80
100 120 140 160 180
V
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature
1000
1000
L = 220nH
C = Variable
L = 220nH
C = 0.4µF
100°C
900
800
700
600
500
400
300
200
100
100°C
25°C
800
25°C
600
400
200
0
130
140
150
160
170
180
190
110
120
130
140
150
160
170
I
Peak Drain Current
(A)
V
Drain-to -Source Voltage
(V)
D,
DS,
Fig 6.
Typical E
PULSE
vs. Drain Current
Fig 5.
Typical E
PULSE
vs. Drain-to-Source
Voltage
3
IRFP4227PbF
1400
1000.0
100.0
10.0
1.0
L = 220nH
1200
C= 0.4µF
C= 0.3µF
C= 0.2µF
1000
T
= 175°C
J
800
600
400
200
0
T
= 25°C
0.8
J
V
= 0V
GS
0.1
25
50
75
100
125
150
0.2
0.4
0.6
1.0
1.2
Temperature (°C)
V
, Source-to-Drain Voltage (V)
SD
Fig 7.
Typical E
PULSE
vs.Temperature
Fig 8.
Typical Source-Drain Diode Forward Voltage
8000
6000
4000
2000
0
20
V
C
= 0V,
f = 1 MHZ
I =
46A
D
GS
= C
+ C
, C
SHORTED
iss
gs
gd ds
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
C
C
= C
rss
oss
gd
16
12
8
= C
+ C
ds
gd
Ciss
Coss
Crss
4
0
0
20
40
60
80
100
120
1
10
100
1000
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 9.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 10.
Typical Gate Charge vs.Gate-to-Source Voltage
70
60
50
40
30
20
10
0
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1µsec
100
10
1
100µsec
10µsec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
25
50
75
100
125
150
175
1
10
100
1000
T
, CaseTemperature (°C)
V
, Drain-to-Source Voltage (V)
C
DS
Fig 12.
Maximum Safe Operating Area
Fig 11.
Maximum Drain Current vs. Case Temperature
4
IRFP4227PbF
600
500
400
300
200
100
0
0.16
0.12
0.08
0.04
0.00
I
I
= 46A
D
D
TOP
8.6A
14A
39A
BOTTOM
T
T
= 125°C
J
= 25°C
9
J
5
6
7
8
10
25
50
75
100
125
150
175
V
, Gate-to-Source Voltage (V)
Starting T
, Junction Temperature (°C)
GS
J
Fig 13.
On-Resistance Vs. Gate Voltage
Fig 14.
Maximum Avalanche Energy Vs. Temperature
5.0
200
ton= 1µs
Duty cycle = 0.25
4.5
4.0
Half Sine Wave
Square Pulse
160
I
= 250µA
D
120
3.5
3.0
2.5
2.0
1.5
80
40
0
-75 -50 -25
0
J
25 50 75
100 125 150 175
, Temperature ( °C )
25
50
75
100
125
150
175
Case Temperature (°C)
T
Fig 16.
Typical Repetitive peak Current vs.
Fig 15.
Threshold Voltage vs. Temperature
Case temperature
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
R
1
R
2
R
2
R
3
R
3
Ri (°C/W)
τ
i (sec)
0.08698 0.000074
R
1
τ
J
τ
J
τ
τ
C
τ
τ
1
τ
1
τ
2
τ
2
3
τ
3
0.2112 0.001316
0.1506 0.009395
0.02
0.01
Ci=
τ
i
/
Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 17.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRFP4227PbF
Driver Gate Drive
P.W.
P
.
W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
di/dt controlled by R
G
R
G
+
–
Body Diode
Inductor Current
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 18.
Diode Reverse Recovery Test Circuit
for N-Channel HEXFET
®
Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
V
GS
Ω
0.01
t
p
I
AS
Fig 19b.
Unclamped Inductive Waveforms
Fig 19a.
Unclamped Inductive Test Circuit
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 20a.
Gate Charge Test Circuit
Fig 20b.
Gate Charge Waveform
6
IRFP4227PbF
A
P
U
L
S
E A
P
U
L
S
E B
RG
C
D
R
I
V
E
R
L
V
C
C
B
Ipulse
D
U
T
RG
t
ST
Fig 21b.
t
st
Test Waveforms
Fig 21a.
t
st
and E
PULSE
Test Circuit
Fig 21c.
E
PULSE
Test Waveforms
R
D
V
DS
V
DS
90%
V
GS
D.U.T.
R
G
+
V
DD
–
10%
V
GS
V
GS
Puls
e
W
idth
≤ 1
µs
Duty Factor
≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 22a.
Switching Time Test Circuit
Fig 22b.
Switching Time Waveforms
7
IRFP4227PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.18mH, R
G
= 25
Ω
, I
AS
= 39A.
Pulse width
≤
400µs; duty cycle
≤
2%.
R
is measured at
T
J
of approximately 90°C.
θ
ꢀ
Half sine wave with duty cycle = 0.25, ton=1µsec.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
8
