Infineon-Technologies-IRFPE40PBF
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IRFPE40, SiHFPE40
Vishay Siliconix
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
V
DS
(V)
800
Available
• Repetitive Avalanche Rated
R
DS(on)
(
Ω
)
V
GS
= 10 V
2.0
RoHS*
• Isolated Central Mounting Hole
• Fast Switching
Q
g
(Max.) (nC)
130
17
COMPLIANT
Q
Q
gs
(nC)
gd
(nC)
• Ease of Paralleling
72
Configuration
Single
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
D
TO-247AC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The
TO-247AC
package
is
preferred
for
S
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because its isolated mounting hole. It also provides
greater creepage distances between pins to meet the
requirements of most safety specifications.
D
S
N-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-247AC
IRFPE450PbF
SiHFPE450-E3
IRFPE450
Lead (Pb)-free
SnPb
SiHFPE450
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
800
V
V
GS
20
T
C
= 25 °C
5.4
Continuous Drain Current
V
GS
at 10 V
I
D
A
T
C
= 100 °C
3.4
Pulsed Drain Current
a
I
DM
22
Linear Derating Factor
1.2
W/°C
mJ
A
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
E
AS
I
AR
490
5.4
E
AR
15
150
mJ
W
Maximum Power Dissipation
T
C
= 25 °C
P
D
Peak Diode Recovery dV/dt
c
dV/dt
T
J
, T
stg
2.0
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
– 55 to + 150
300
d
°C
for 10 s
6-32 or M3 screw
10
lbf · in
N · m
Mounting Torque
1.1
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 31 mH, R
g
= 25
Ω
, I
AS
= 5.4 A (see fig. 12).
c. I
SD
≤
5.4 A, dI/dt
≤
120 A/μs, V
DD
≤
600, T
J
≤
150 °C.
d. 1.6
mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91247
S11-0442-Rev. B, 14-Mar-11
1
This datasheet is subject to change without notice.
IRFPE40, SiHFPE40
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
40
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
R
thJA
R
thCS
R
thJC
–
0.24
–
–
°C/W
0.83
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
Δ
V
DS
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
800
–
–
V
V/°C
V
–
2.0
–
0.98
–
–
–
–
–
–
–
4.0
100
100
500
2.0
–
V
GS
V
DS
= 800 V, V
GS
= 0 V
DS
= 640 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 3.2 A
b
V
DS
= 100 V, I
D
= 3.2 A
b
=
20 V
nA
–
Zero Gate Voltage Drain Current
I
DSS
μA
V
–
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
R
DS(on)
g
fs
–
Ω
3.0
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
–
–
–
–
1900
470
280
–
–
–
V
GS
= 0 V,
V
DS
= 25 V,
pF
f = 1.0 MHz, see fig. 5
–
130
17
72
–
I
D
= 5.4 A, V
DS
= 400 V,
see fig. 6 and 13
b
Q
gs
Q
gd
t
d(on)
t
r
V
GS
= 10 V
–
nC
–
16
36
100
32
–
V
DD
= 400 V, I
D
= 5.4 A,
ns
R
g
= 9.1
Ω
, R
D
= 75
Ω
, see fig. 10
b
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
–
–
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
L
D
L
S
–
–
5.0
13
–
–
6 mm (0.25″) from
package and center of
die contact
nH
G
S
Drain-Source Body Diode Characteristics
D
MOSFET symbol
Continuous Source-Drain Diode Current
I
S
–
–
–
–
5.4
22
showing the
integral reverse
p – n junction diode
A
G
Pulsed Diode Forward Current
a
I
SM
S
Body Diode Voltage
V
SD
t
rr
T
J
= 25 °C, I
S
= 5.4 A, V
GS
= 0 V
b
–
–
–
–
1.8
830
3.6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
550
2.4
ns
μC
T
J
= 25 °C, I
F
= 5.4 A, dI/dt = 100 A/μs
b
Q
rr
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse
width
≤
300 μs; duty cycle
≤
2 %.
2
Document Number: 91247
S11-0442-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
IRFPE40, SiHFPE40
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Fig. 1 – Typical Output Characteristics, T
C
= 25 °C
Fig. 3 – Typical Transfer Characteristics
Fig. 2 – Typical Output Characteristics, T
C
= 150 °C
Fig. 4 – Normalized On-Resistance vs. Temperature
Document Number: 91247
S11-0442-Rev. B, 14-Mar-11
3
This datasheet is subject to change without notice.
IRFPE40, SiHFPE40
Vishay Siliconix
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 – Typical Source-Drain Diode Forward Voltage
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 – Maximum Safe Operating Area
4
Document Number: 91247
S11-0442-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
IRFPE40, SiHFPE40
Vishay Siliconix
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
–
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a – Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 – Maximum Drain Current vs. Case Temperature
Fig. 10b – Switching Time Waveforms
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91247
S11-0442-Rev. B, 14-Mar-11
5
This datasheet is subject to change without notice.
IRFPE40, SiHFPE40
Vishay Siliconix
L
V
DS
V
DS
Vary t
p
to obtain
required I
AS
t
p
V
DD
D.U.T.
I
AS
R
G
+
–
V
DD
V
DS
A
10 V
0.01
Ω
t
p
I
AS
Fig. 12b – Unclamped Inductive Waveforms
Fig. 12a – Unclamped Inductive Test Circuit
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 k
Ω
Q
G
10 V
12 V
0.2 µF
0.3 µF
Q
GS
Q
GD
+
–
V
DS
D.U.T.
V
G
V
GS
3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test Circuit
6
Document Number: 91247
S11-0442-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
IRFPE40, SiHFPE40
Vishay Siliconix
Peak Dio
d
e Recovery
d
V/
d
t Test Circuit
+
Circuit layout con
s
ideration
s
•
Low
s
tray inductance
•
G
round plane
D.U.T.
•
Low leakage inductance
current tran
s
former
–
+
–
–
+
R
g
•
dV/dt controlled by R
g
+
•
Driver
s
ame type a
s
D.U.T.
•
I
S
D
controlled by duty factor “D”
•
D.U.T. – device under te
s
t
V
DD
–
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS
= 10 V
a
D.U.T. l
S
D
waveform
D.U.T. V
D
S
waveform
Rever
s
e
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Inductor current
I
S
D
Ripple
≤
5 %
Note
a. V
GS
= 5 V for logic level device
s
Fig. 14 – For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 91247
S11-0442-Rev. B, 14-Mar-11
7
This datasheet is subject to change without notice.
Package Information
Vishay Siliconix
TO-247AC (High Voltage)
A
A
4
E
7
M
ØP
M
D B
(Datum B)
ØP1
B
R/2
A2
A
E/2
S
Ø k
3
D2
Q
4
4
2 x R
(2)
D1
D
L
4
D
1
2
3
Thermal pad
5
L1
C
4
E1
A
See view B
M
M
0.01 D
B
2 x b2
3 x b
View A – A
C
2 x
e
A1
b4
M
M
0.10 C
A
(b1, b3, b5)
(b, b2, b4)
Planting
Base metal
Lead Assignments
1. Gate
2. Drain
3. Source
4. Drain
D D
E
E
(c)
c1
C
C
(4)
Section C – C, D – D, E – E
View B
MILLIMETERS
INCHES
MILLIMETERS
INCHES
MIN.
0.020
0.602
0.540
DIM.
A
A1
A2
b
b1
b2
b3
b4
b5
c
MIN.
4.58
2.21
1.17
0.99
0.99
1.53
1.65
2.42
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.82
–
MIN.
0.180
0.087
0.046
0.039
0.039
0.060
0.065
0.095
0.102
0.015
0.015
0.776
0.515
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.093
0.135
0.133
0.034
0.030
0.820
–
DIM.
D2
E
E1
e
Ø k
L
L1
N
Ø P
Ø P1
Q
R
S
MIN.
0.51
15.29
13.72
MAX.
MAX.
0.051
0.625
–
1.30
15.87
–
5.46 BSC
0.254
0.215 BSC
0.010
14.20
3.71
16.25
4.29
0.559
0.146
0.640
0.169
7.62 BSC
3.51
0.300 BSC
3.66
7.39
5.69
5.49
0.138
–
0.209
0.178
0.144
0.291
0.224
0.216
–
c1
D
D1
5.31
4.52
5.51 BSC
0.217 BSC
ECN: X13-0103-Rev. D, 01-Jul-13
DWG: 5971
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at
the outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″).
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
8. Xian and Mingxin actually photo.
Revision: 01-Jul-13
Document Number: 91360
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications.
Such statements are not binding statements
about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application.
Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time.
All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) – recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards.
Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition.
We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
