Infineon-Technologies-IRFPS3815PBF
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PD – 95896
IRFPS3815PbF
HEXFET
®
Power MOSFET
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
D
V
DSS
= 150V
R
DS(on)
= 0.015
Ω
G
l
Fully Avalanche Rated
l
Lead-Free
I
D
= 105A
S
Description
The HEXFET
®
Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low
on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in
a wide variety of applications.
Super
–
247™
Absolute Maximum Ratings
Parameter
Max.
105
74
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
A
390
441
2.9
P
D
@T
C
= 25°C
Powe
r
D
issipation
W
W/°C
V
Linea
r
D
eratin
g
F
actor
V
GS
E
AS
I
AR
Gate-to-Sourc
e
V
oltage
± 30
1610
58
Single Pulse Avalanche Energy
Avalanch
e
C
urrent
mJ
A
E
AR
dv/dt
T
J
Repetitiv
e
A
valanch
e
E
nergy
Peak Diode Recovery dv/dt
Operatin
g
J
unctio
n
a
nd
38
mJ
V/ns
3.0
-55 to
+ 175
T
STG
Storage Temperature Range
Solderin
g
T
emperature, fo
r
1
0
s
econds
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
R
θ
JC
R
θ
CS
R
θ
JA
0.34
–––
40
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
1
09/13/04
IRFPS3815PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
150 –––
–––
Conditions
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
––– 0.18
––– V/°C
Reference to 25°C, I
D
= 1mA
R
DS(on)
V
GS(th)
g
fs
Stati
c
D
rain-to-Sourc
e
O
n-Resistance
Gat
e
T
hreshol
d
V
oltage
––– –––
0.015
Ω
V
S
V
GS
= 10V, I
D
= 63A
V
DS
= 10V, I
D
= 250µA
V
DS
= 50V, I
D
= 58A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 30V
3.0
47
––– 5.0
––– –––
Forward Transconductance
––– ––– 25
––– –––
250
––– –––
100
––– –––
-100
––– 260
390
I
DSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
I
GSS
V
GS
= -30V
Q
g
I
D
= 58A
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
–––
––– 150
230
––– 22
–––
––– 130
–––
53
80
nC V
DS
= 120V
V
GS
= 10V
V
DD
= 75V
I
D
= 58A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
–––
–––
51 –––
60 –––
R
G
= 1.03
Ω
V
GS
= 10V
D
Between lead,
5.0
L
D
L
S
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
6mm (0.25in.)
nH
G
from package
13
and center of die contact
S
C
iss
Input Capacitance
––– 6810
–––
––– 1570
–––
––– 480
–––
––– 9820
–––
––– 670
–––
––– 1270
–––
V
GS
= 0V
C
oss
Output Capacitance
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
Output Capacitance
ƒ = 1.0MHz, See Fig. 5
C
oss
V
GS
= 0V,
V
DS
= 1.0V,
ƒ = 1.0MHz
V
GS
= 0V,
V
DS
= 120V,
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 120V
C
oss
Output Capacitance
C
oss
eff.
Effective Output Capacitance
ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
I
S
MOSFET symbol
105
––– –––
showing the
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
––– –––
390
S
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 270 410
V
T
J
= 25°C, I
S
= 58A, V
GS
= 0V
ns
T
J
= 25°C, I
F
= 58A
Q
rr
t
on
––– 2990
4490 nC di/dt
= 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating;
pulse width limited by
Pulse width
≤
300µs; duty cycle
≤
2%.
max. junction temperature. (See fig. 11)
ꢀ
C
oss
eff. is a fixed capacitance that gives the same charging time
Starting T
J
= 25°C, L = 0.96mH
R
G
= 25
Ω
, I
AS
= 58A. (See Figure 12)
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
I
SD
≤
58A, di/dt
≤
450A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
175°C
,
2
IRFPS3815PbF
1000
100
10
1000
100
10
VGS
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
TOP
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
1
5.0V
0.1
0.01
50µs PULSE WIDTH
T =
25 C
J
50µs PULSE WIDTH
T =
175 C
J
°
°
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
97A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T =
175 C
J
100
10
1
°
T =
25 C
J
V
= 50V
DS
50µs PULSE WIDTH
V
=
1
0V
GS
-60 -40 -20
0
20 40 60 80
100 120 140 160 180
°
5
6
7
8
9
10 11
12
T ,
Junction Temperature (
C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRFPS3815PbF
20
16
12
8
12000
I
D
= 58A
V
= 0V,
f = 1 MHZ
GS
V
V
V
= 120V
= 75V
= 30V
C
= C
+ C
,
C
ds
SHORTED
DS
DS
DS
iss
gs
gd
C
= C
10000
8000
6000
4000
2000
0
rss
gd
C
= C
+ C
Ciss
oss
ds
gd
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
100
200
300
400
1
10
100
1000
Q ,
Total Gate Charge (nC)
G
V
DS
, Drain-to-Source Voltage (V)
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
10000
1000
100
10
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
°
T =
175 C
J
10us
100us
°
T =
25 C
J
1ms
10ms
°
T =
25 C
C
°
T =
175 C
Single Pulse
J
V
= 0 V
GS
1.6
0.1
0.0
1
0.4
0.8
1.2
2.0
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRFPS3815PbF
120
100
80
60
40
20
0
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
V
DS
90%
25
50
75
100
125
150
175
°
T ,
Case Temperature
( C)
C
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
P
DM
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T
=
P
t /
t
1
2
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRFPS3815PbF
4000
3000
2000
1000
0
15V
I
D
TOP
24A
41A
BOTTOM 58A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
20V
0.01
Ω
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
Starting T
, Junction Temperature (
C)
J
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b.
Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.
T
.
Q
G
50K
Ω
.2
µ
F
12V
10 V
.3
µ
F
Q
Q
GD
GS
+
V
DS
D.U.
T
.
–
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit
6
IRFPS3815PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.T
*
–
+
–
–
+
R
G
•
dv/dt controlled by R
G
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
+
–
V
DD
V
GS
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P
.
W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.
T
. I
W
aveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
]
[
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple
≤
5%
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
Fig 14.
For N-channel
HEXFET
®
power MOSFETs
7
IRFPS3815PbF
Case Outline and Dimensions — Super-247
Super-247 (TO-274AA) Part Marking Information
EXAMPLE: THIS IS AN IRFPS37N50A WITH
ASSEMBLY LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE “C”
PART NUMBER
INTERNATIONAL RECTIFIER
LOGO
IRFPS37N50A
719C
17
89
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
ASSEMBLY LOT CODE
Note: “P” in assembly line position
indicates “Lead-Free”
TOP
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
8
