Infineon-Technologies-IRFR2405TRPBF
| Part # | Infineon-Technologies-IRFR2405TRPBF |
Download  | Infineon-Technologies-IRFR2405TRPBF |
PD – 95369A
IRFR2405PbF
IRFU2405PbF
HEXFET
®
Power MOSFET
l
Surface Mount (IRFR2405)
l
Straight Lead (IRFU2405)
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
Fast Switching
D
V
DSS
= 55V
l
Fully Avalanche Rated
l
Lead-Free
R
DS(on)
= 0.016
Ω
G
Description
I
D
= 56A
Seventh Generation HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low
on-resistance per
silicon area.
This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
S
The D-Pak is designed for surface mounting using
vapor phase,
infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications.
Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
D-Pak
IRFR2405
I-Pak
IRFU2405
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
56
40
220
110
0.71
± 20
130
34
A
P
D
@T
C
= 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
V
GS
E
AS
I
AR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
E
AR
dv/dt
T
J
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
11
mJ
V/ns
5.0
-55 to
+ 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
1.4
50
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
110
*
When mounted on 1″ square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
1
12/03/04
IRFR/U2405OPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 –––
–––
Conditions
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
––– 0.052
––– V/°C
Reference to 25°C, I
D
= 1mA
R
DS(on)
V
GS(th)
g
fs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– 0.0118
0.016
Ω
V
S
V
GS
= 10V, I
D
= 34A
V
DS
= 10V, I
D
= 250µA
V
DS
= 25V, I
D
= 34A
2.0
30
––– 4.0
––– –––
Forward Transconductance
––– ––– 20
––– –––
250
––– –––
200
––– –––
-200
V
DS
= 55V, V
GS
= 0V
I
DSS
Drain-to-Source Leakage Current
µA
nA
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
GS
= 20V
I
GSS
V
GS
= -20V
I
D
= 34A
Q
g
–––
–––
–––
–––
70 110
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
16
19
23
29
nC V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
15 –––
––– 130
–––
I
D
= 34A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
–––
–––
55 –––
78 –––
R
G
= 6.8
Ω
V
GS
= 10V
D
Between lead,
L
D
L
S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
–––
6mm (0.25in.)
nH
G
from package
–––
7.5
and center of die contact
S
C
iss
Input Capacitance
––– 2430
–––
––– 470
–––
––– 100
–––
––– 2040
–––
––– 350
–––
––– 350
–––
V
GS
= 0V
C
oss
Output Capacitance
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
Output Capacitance
ƒ = 1.0MHz, See Fig. 5
C
oss
V
GS
= 0V,
V
DS
= 1.0V,
ƒ = 1.0MHz
V
GS
= 0V,
V
DS
= 44V,
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
C
oss
Output Capacitance
C
oss
eff.
Effective Output Capacitance
ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
I
S
MOSFET symbol
––– –––
––– –––
56
showing the
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
220
S
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 62
93
––– 170 260
V
T
J
= 25°C, I
S
= 34A, V
GS
= 0V
ns
T
J
= 25°C, I
F
= 34A
Q
rr
t
on
nC di/dt
= 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating;
pulse width limited by
Pulse width
≤
300µs; duty cycle
≤
2%.
max. junction temperature.
ꢀ
C
oss
eff. is a fixed capacitance that gives the same charging time
Starting T
J
= 25°C, L = 0.22mH
R
G
= 25
Ω
, I
AS
= 34A.
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A
I
SD
≤
34A, di/dt
≤
190A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
175°C
,
2
IRFR/U2405PbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
°
T =
175 C
J
20µs PULSE WIDTH
°
T =
25 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
56A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T =
25 C
J
°
T =
175 C
J
100
V
= 25V
DS
20µs PULSE WIDTH
V
=
1
0V
GS
10
4.0
-60 -40 -20
0
20 40 60 80
100 120 140 160 180
°
5.0
6.0
7.0
8.0 9.0
10.0
T ,
Junction Temperature (
C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRFR/U2405OPbF
20
16
12
8
4000
I =
34A
D
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
C
= C
+ C
iss
gs
gd ,
V
= 44V
= 27V
= 11V
DS
C
= C
rss
gd
V
V
DS
C
= C
+ C
gd
3200
2400
1600
800
0
oss
ds
DS
C
iss
4
C
C
oss
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
1
10
100
0
20
40
60
80
100
V
, Drain-to-Source Voltage (V)
Q ,
Total Gate Charge (nC)
DS
G
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100
10
1
°
T =
175 C
J
100us
°
T =
25 C
J
1ms
°
T =
25 C
10ms
C
J
°
T =
175 C
V
= 0 V
Single Pulse
GS
2.0
1
0.4
0.8
1.2
1.6
2.4
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRFR/U2405PbF
R
D
60
50
40
30
20
10
0
V
DS
LIMITED BY PACKAGE
V
GS
D.U.T.
R
G
+
V
DD
–
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T ,
Case Temperature
( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9.
Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b.
Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
0.01
t
1
SINGLE PULSE
0.02
0.01
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
2. Peak T
=
P
t /
t
1
x Z
+ T
thJC C
J
DM
0.00001
0.0001
0.001
0.01
0.1
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRFR/U2405OPbF
240
200
160
120
80
15V
I
D
TOP
14A
24A
BOTTOM 34A
DRIVER
L
V
DS
D.U.T
AS
R
G
+
–
V
DD
I
A
20V
0.01
Ω
t
p
Fig 12a.
Unclamped Inductive Test Circuit
40
V
(BR)DSS
0
25
50
75
100
125
150
175
t
p
°
Starting T
, Junction Temperature
( C)
J
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b.
Unclamped Inductive Waveforms
Current Regulator
Q
G
Same Type as D.U.
T
.
50K
Ω
.2
µ
F
Q
Q
GD
12V
GS
.3
µ
F
+
V
DS
D.U.
T
.
–
V
G
V
GS
3mA
Charge
I
I
D
G
Current Sampling Resistors
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
6
IRFR/U2405PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.T
–
+
–
–
+
R
G
•
dv/dt controlled by R
G
+
–
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
V
DD
Driver Gate Drive
P.W.
P
.
W.
Period
Period
D =
V
=10V
*
GS
D.U.
T
. I
W
aveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 14.
For N-Channel HEXFET
®
Power MOSFETs
7
IRFR/U2405OPbF
D-Pak (TO-252AA) Package Outline
D-Pak (TO-252AA) Part Marking Information
E
X
AM
P
L
E: THIS
IS AN IR
F
R120
P
A
R
T NUMBER
WITH A
S
SEMBLY
L
O
T CODE 1234
INTERNATI
O
NAL
RECTIFIER
L
O
GO
DAT E
C
ODE
Y
E
AR 9 =
1999
WEEK 16
I
R
FU120
916A
A
S
SE
M
BLED ON WW
1
6, 1999
IN THE A
S
SE
M
BLY
LINE “A”
12
34
LI
N
E A
Note:
“
P
“
i
n
a
ssemb
l
y li
n
e pos
i
ti
o
n
A
S
S
E
MBLY
L
O
T CODE
i
n
di ca
t
e
s
“
L
e
ad-F
r
e
e”
OR
P
A
R
T NUMBER
D
A
TE
C
ODE
P =
DES
I
G
NATES LEAD-FREE
PRODUCT (OP
T
I
O
N
A
L)
INTERNATI
O
N
A
L
RECTIFIER
L
O
GO
IR
F
U120
12 34
Y
E
A
R 9 =
1
999
A
S
SE
M
BLY
L
O
T CODE
WEEK 16
A =
A
S
SE
M
BL
Y
S
I
TE
C
ODE
8
IRFR/U2405PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
P
A
RT NUMBER
E
X
AM
P
L
E
: THIS
IS AN IRFU
1
20
INT
E
RN
A
TI
O
N
A
L
WITH A
S
SE
M
BLY
D
A
T E
C
ODE
Y
E
A
R 9 =
1
999
WEEK 19
RECT
I
F
I
ER
L
O
GO
IRFU120
919A
78
L
O
T CODE 5678
A
S
SE
M
BL
E
D ON
W
W
1
9, 1999
IN THE A
S
SE
M
BL
Y
L
I
N
E
“
A”
56
LINE A
A
S
SE
M
BLY
L
O
T CODE
Note :
“
P
”
i
n
a
ssemb
l
y li
n
e
pos
i
ti
o
n
i
n
d
i
c
a
t
e
s
“
L
e
ad
–
F re
e
”
OR
P
A
R
T NUMBER
DATE
C
ODE
INTERN
A
TI
O
NAL
RE
C
T
I
F
I
ER
LOGO
IRFU120
56 78
P =
DE
S
I
G
NATES LEAD-FREE
PRODUCT (OP
T
I
O
N
A
L)
Y
E
AR 9 =
1
999
AS S E MB L Y
LOT CODE
WE E K
1
9
A =
AS S E MB L Y S I T E C
O
D
E
9
IRFR/U2405OPbF
D-Pak (TO-252AA)
T
a
pe & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
10
Note: For
the most current drawings please refer to the IR website at:
