Infineon-Technologies-IRFR420TRPBF
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IRFR420TRPbF
HEXFET® Power MOSFET
Benefits
V
DSS
500V
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Surface Mount (IRFR420)
Available in Tape and Reel
Fast Switching
Ease of Paralleling
Pb-Free ; RoHS Compliant ; Halogen-Free
R
DS(on) max
3.0
I
D (Silicon Limited)
2.4A
D
S
Description
G
Third Generation HEXFETs from Infineon Technology
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance and
cost-e
ff
ectiveness.
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. Power dissi-
pation levels up to 1.5 watts are possible in typical surface
mount applications.
G
D
S
Gate
Drain
Source
Standard Pack
Form
Base part number
Package Type
Orderable Part Number
Quantity
IRFR420PbF
D-Pak
Tape and Reel
2000
IRFR420TRPbF
Final Datasheet
Please read the important Notice and Warnings at the end of this document
V2.0
2017-08-01
HEXFET® Power MOSFET
IRFR420TRPbF
Table of Contents
Table of Contents
2
Final Datasheet
V2.0
2017-08-01
HEXFET® Power MOSFET
IRFR420TRPbF
Parameters
1
Parameters
Table1
Key performance parameters
Parameter
Values
Units
V
DS
500
3.0
2.4
V
R
DS(on) max
I
D
A
3
Final Datasheet
V2.0
2017-08-01
HEXFET® Power MOSFET
IRFR420TRPbF
Maximum ratings and thermal characteristics
2
Maximum ratings and thermal characteristics
Table 2
Maximum ratings (at T
J
=25
°
C, unless otherwise specified)
Parameter
Symbol
Conditions
Values
Unit
Continuous Drain Current
Continuous Drain Current
Linear Derating Factor
I
D
I
D
I
DM
P
D
P
D
T
C
= 25°C, V
GS
@ 10V
T
C
= 100°C, V
GS
@ 10V
T
C
= 25°C
2.4
1.5
8.0
42
2.5
0.33
0.02
± 20
A
T
C
= 25°C
T
A
= 25°C
T
C
= 25°C
T
A
= 25°C
W
W/°C
Gate-to-Source Voltage
V
GS
–
V
Operating Junction and
T
J
–
–
-55 to
+ 150
260
Storage Temperature Range
Soldering Temperature, for 10 seconds
T
STG
°C
–
(1.6mm from case)
Table 3
Thermal characteristics
Parameter
Symbol
Conditions
T
J
approximately 90°C
Min.
Typ.
Max.
3.0
50
110
Unit
–
–
–
–
–
–
R
JC
–
–
°C/W
R
JA
R
JA
Table 4
Avalanche characteristics
Parameter
Symbol
Values
Unit
E
AS (Thermally limited)
I
AR
400
2.4
mJ
A
E
AR
mJ
4.2
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Figure 11).
Limited by T
Jmax
,
starting T
J
= 25°C, L = 139mH, R
G
= 25
, I
AS
= 2.4A,
V
GS
=10V. (See Figure 10).
I
SD
2.4A, di/dt
50A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
Pulse width
300µs; duty cycle
2%.
When mounted on 1″ square PCB (FR-4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.please refer to application note to AN-994.
R
is measured at T
J
approximately 90°C.
4
Final Datasheet
V2.0
2017-08-01
HEXFET® Power MOSFET
IRFR420TRPbF
Electrical characteristics
3
Electrical characteristics
Table 5
Static characteristics
Values
Min. Typ. Max.
Parameter
Symbol
Conditions
Unit
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coe
ff
icient
Static Drain-to-Source On-Resistance
V
(BR)DSS
V
(BR)DSS
/
T
J
R
DS(on)
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 1.4A
500
–
–
–
0.59
–
–
–
3.0
V
V/°C
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
2.0
–
–
–
–
–
4.0
25
V
V
DS
=500V, V
GS
=0V
Drain-to-Source Leakage Current
I
DSS
I
GSS
µA
V
DS
=400V,V
GS
= 0V,T
J
=125°C
250
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
GS
= 20V
V
GS
= -20V
–
–
–
–
100
-100
nA
I
GSS
Table 6
Dynamic characteristics
Values
Min. Typ. Max.
Parameter
Symbol
Conditions
Unit
Forward Trans conductance
gfs
V
DS
= 50V, I
D
= 1.4A
1.5
–
–
S
I
D
= 2.1A
V
DS
= 400V
V
GS
= 10V
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
–
–
–
–
–
–
–
–
–
–
8.0
8.6
33
16
19
3.3
13
–
–
–
nC
See Fig.6 and 13
V
DD
= 250V
I
D
= 2.1A
ns
Turn-O
ff
Delay Time
Fall Time
t
d(o
ff
)
t
f
R
G
= 18
–
R
D
= 120
See Fig.10
Between lead,
Internal Drain Inductance
L
D
–
4.5
–
6mm (0.25in.)
nH
pF
from package
Internal Source Inductance
L
s
and center of die contact
–
7.5
–
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz,
See Fig.5
–
–
–
360
92
37
–
–
–
Table 7
Reverse Diode
Values
Parameter
Symbol
Conditions
Unit
Min. Typ. Max.
Continuous Source Current
(Body Diode)
Pulsed Source Current
MOSFET symbol
D
I
S
–
–
2.4
showing the
A
G
integral reverse
p-n junction diode.
I
SM
–
–
8.0
S
V
SD
–
–
–
–
–
1.6
3.5
520
V
dv/dt
t
rr
V/ns
ns
Reverse Recovery Time
T
J
= 25°C
T
J
= 25°C
260
I
F
= 2.1A,
Reverse Recovery Charge
Q
rr
–
0.7
1.4
C
5
Final Datasheet
V2.0
2017-08-01
HEXFET® Power MOSFET
IRFR420TRPbF
Electrical characteristic diagrams
4
Electrical characteristic diagrams
Figure 2
Typical Output Characteristics,
T
C
= 150°C
Figure 1
Typical Output Characteristics,
T
C
= 25°C
Figure 3
Typical Transfer Characteristics
Figure 4
Normalized On-Resistance vs. Temperature
6
Final Datasheet
V2.0
2017-08-01
HEXFET® Power MOSFET
IRFR420TRPbF
Electrical characteristic diagrams
Figure 6
Typical Gate Charge vs.
Gate-to-Source
Voltage
Figure 5
Typical Capacitance vs. Drain-to-Source
Voltage
Figure 8
Maximum Safe Operating Area
Figure 7
Typical Source-Drain Diode Forward
Voltage
7
Final Datasheet
V2.0
2017-08-01
HEXFET® Power MOSFET
IRFR420TRPbF
Electrical characteristic diagrams
1000
800
600
400
200
0
2.4
2.0
1.6
1.2
0.8
0.4
0.0
I
D
TOP
1.1A
1.5A
BOTTOM 2.4A
25
50
75
100
125
150
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
T
, Case Temperature (°C)
J
C
Figure 9
Maximum Drain Current vs. Case
Temperature
Figure 10
Maximum Avalanche Energy vs.
Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Figure 11
Maximum E
ff
ective Transient Thermal Impedance, Junction-to-Case
8
Final Datasheet
V2.0
2017-08-01
HEXFET® Power MOSFET
IRFR420TRPbF
Electrical characteristic diagrams
Figure 12b
Switching Time Waveforms
Figure 12a
Switching Time Test Circuit
Figure 13
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET™ Power MOSFETs
9
Final Datasheet
V2.0
2017-08-01
HEXFET® Power MOSFET
IRFR420TRPbF
Electrical characteristic diagrams
Figure 14b
Unclamped Inductive Waveforms
Figure 14a
Unclamped Inductive Test Circuit
Figure 15b
Gate Charge Test Circuit
Figure 15a
Gate Charge Waveform
10
Final Datasheet
V2.0
2017-08-01
HEXFET® Power MOSFET
IRFR420TRPbF
Package Information
5
Package Information
D-Pak (TO-252AA) Package Outline
(Dimensions are shown in millimeters (inches))
D-Pak (TO-252AA) Part Marking Information
11
Final Datasheet
V2.0
2017-08-01
HEXFET® Power MOSFET
IRFR420TRPbF
Package Information
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
12
Final Datasheet
V2.0
2017-08-01
HEXFET® Power MOSFET
IRFR420TRPbF
Qualification Information
6
Qualification Information
Qualification
Information
Qualification Level
Industrial
(per JEDEC JESD47F)
†
Moisture Sensitivity Level
RoHS Compliant
D-Pak
MSL1
Yes
†
Applicable version of JEDEC standard at the time of product release.
13
Final Datasheet
V2.0
2017-08-01
HEXFET® Power MOSFET
IRFR420TRPbF
Revision History
Revision History
Major changes since the last revision
Page or Reference
Revision
Date
Description of changes
All pages
1.0
2017-08-01
First release data sheet.
14
Final Datasheet
V2.0
2017-08-01
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,
DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™,
HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™,
OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™,
SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
For further information on the product, technology,
Edition 2015-05-06
Published by
Infineon Technologies AG
81726 Munich, Germany
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Bescha
ff
enheitsgarantie”) .
delivery terms and conditions and prices please
contact your nearest Infineon Technologies o
ff
ice
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement of
intellectual property rights of any third party.
WARNINGS
© 2016 Infineon Technologies AG.
All Rights Reserved.
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies o
ff
ice.
Do you have a question about this
document?
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In addition, any information given in this document
is subject to customer’s compliance with its
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applicable legal requirements, norms and standards
concerning customer’s products and any use of the
product of Infineon Technologies in customer’s
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any applications where a failure of the product or
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The data contained in this document is exclusively
intended for technically trained sta
ff
. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
