Infineon-Technologies-IRFR540ZTRPBF
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PD – 96141B
IRFR540ZPbF
IRFU540ZPbF
HEXFET
®
Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
Ultr
a
L
o
w
O
n-Resistance
175°
C
O
peratin
g
T
emperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
D
V
DSS
= 100V
Halogen-Free
R
DS(on)
= 28.5m
Ω
G
Description
Thi
s
H
EXFET
®
Powe
r
M
OSFE
T
u
tilize
s
t
h
e
l
atest
processing techniques to achieve extremely low
on-resistanc
e
p
e
r
s
ilico
n
a
rea
.
A
dditiona
l
f
eatures
of this design
are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combin
e
t
o
m
ak
e
t
hi
s
d
esig
n
a
n
e
xtremel
y
e
fficient
and reliable device for use in a wide variety of
applications.
I
D
= 35A
S
D-Pak
I-Pak
IRFR540ZPbF
IRFU540ZPbF
Absolute Maximum Ratings
Parameter
Max.
Units
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Pulsed Drain Current
I
I
I
@ T
= 25°C
C
35
D
D
@ T
= 100°C
C
25
140
91
A
DM
P
@T =
25°C Power
Dissipation
W
D
C
Linear Derating Factor
0.61
± 20
W/°C
V
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy
GS
E
AS (Thermally limited)
39
75
mJ
Single Pulse Avalanche Energy Tested Value
Avalanche Current
E
AS
(Tested )
I
AR
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
Operating Junction and
E
AR
mJ
T
J
-55 to
+ 175
T
Storage Temperature Range
°C
STG
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
300
10 lbf
in (1.1N
m)
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
1.64
40
Units
Junction-to-Case
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
110
HEXFET
®
i
s
a
r
egistere
d
t
rademar
k
o
f
I
nternationa
l
R
ectifier.
1
09/30/10
IRFR/U540ZPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max.
Units
100 ––– –––
Conditions
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
V
∆
∆
V
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
––– 0.092 –––
V/°C Reference
to 25°C, I
D
= 1mA
m
Ω
V
R
DS(on)
V
GS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
22.5 28.5
V
GS
= 10V, I
D
= 21A
V
DS
= V
GS
, I
D
= 50µA
V
DS
= 25V, I
D
= 21A
–––
–––
–––
–––
–––
–––
39
4.0
–––
20
Forward Transconductance
28
S
I
DSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
250
200
-200
59
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Q
g
Q
gs
Q
gd
t
d(on)
t
r
I
D
= 21A
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
11
–––
–––
–––
–––
–––
–––
–––
nC V
DS
= 50V
V
GS
= 10V
12
14
V
DD
= 50V
Rise Time
42
I
D
= 21A
t
d(off)
t
f
Turn-Off Delay Time
43
ns R
G
= 13
Ω
V
GS
= 10V
Fall Time
34
L
D
Internal Drain Inductance
4.5
Between lead,
D
nH 6mm
(0.25in.)
G
L
S
Internal Source Inductance
–––
7.5
–––
from package
S
and center of die contact
C
iss
Input Capacitance
––– 1690 –––
V
GS
= 0V
C
oss
C
rss
C
oss
C
oss
Output Capacitance
–––
–––
–––
–––
–––
180
100
720
110
190
–––
–––
–––
–––
–––
V
DS
= 25V
pF ƒ
= 1.0MHz
V
GS
= 0V,
V
DS
= 1.0V,
ƒ = 1.0MHz
V
GS
= 0V,
V
DS
= 80V,
ƒ = 1.0MHz
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
C
oss
eff.
Effective Output Capacitance
V
GS
= 0V, V
DS
= 0V to 80V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
I
Continuous Source Current
–––
–––
35
MOSFET symbol
S
(Body Diode)
A
showing the
I
Pulsed Source Current
–––
–––
140
integral reverse
SM
(Body Diode)
p-n junction diode.
V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
32
1.3
48
60
V
T =
25°C, I
= 21A, V
= 0V
J S GS
SD
t
ns T
= 25°C, I
= 21A, V
DD
= 50V
J F
rr
di/dt = 100A/µs
Q
40
nC
rr
t
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
IRFR/U540ZPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
60µs PULSE WIDTH
≤
TOP
TOP
Tj = 25°C
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM
BOTTOM
4.5V
60µs PULSE WIDTH
≤
Tj = 175°C
4.5V
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
70
T
= 25°C
J
60
50
40
30
20
10
0
100
10
1
T
= 175°C
J
T
= 175°C
J
T
= 25°C
J
V
= 10V
V
= 25V
DS
380µs PULSE WIDTH
DS
60µs PULSE WIDTH
≤
0.1
2
3
4
5
6
7
8
0
10
20
30
40
50
I ,Drain-to-Source
Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
3
IRFR/U540ZPbF
3000
20
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I =
21A
D
= C
+ C
, C
SHORTED
iss
gs
gd ds
V
= 80V
C
= C
DS
2500
2000
1500
1000
500
rss
gd
VDS= 50V
VDS= 20V
C
= C
+ C
ds
oss
gd
C
iss
4
C
C
oss
rss
0
0
0
10
20
30
40
50
60
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6.
Typical Gate Charge vs.
Fig 5.
Typical Capacitance vs.
Gate-to-Sourc
e
V
oltage
Drain-to-Sourc
e
V
oltage
1000.0
100.0
10.0
1.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
1msec
T
= 175°C
J
T
= 25°C
J
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V ,
Drain-toSource Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRFR/U540ZPbF
2.5
2.0
1.5
1.0
0.5
40
30
20
10
0
I
= 21A
= 10V
D
V
GS
-60 -40 -20
0
20 40 60 80
100 120 140 160 180
25
50
75
100
125
150
175
T
, Junction Temperature (°C)
T
, CaseTemperature (°C)
J
C
Fig 10.
Normalized On-Resistance
Fig 9.
Maximum Drain Current vs.
vs
.
T
emperature
Cas
e
T
emperature
10
1
0.1
D = 0.50
0.20
0.10
R
1
R
2
R
2
R
3
R
3
Ri (°C/W)
τ
i (sec)
R
1
τ
0.05
J
τ
J
τ
τ
C
τ
2.626
0.000052
τ
1
τ
1
τ
0.02
0.01
2
τ
2
3
τ
3
0.6611 0.001297
0.7154 0.01832
Ci=
τ
i
/
Ri
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRFR/U540ZPbF
160
120
80
40
0
15V
I
D
TOP
6.5A
9.4A
21A
DRIVER
+
L
V
BOTTOM
DS
D.U.T
AS
R
G
V
DD
–
I
A
2
V
0
G
V
S
Ω
0.01
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
I
AS
Fig 12c.
Maximum Avalanche Energy
Fig 12b.
Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
GS
GD
I
= 1.0mA
D
ID = 250µA
= 50µA
V
I
G
D
Charge
Fig 13a.
Basic Gate Charge Waveform
L
VCC
DUT
0
-75 -50 -25
0
J
25 50 75
100 125 150 175
, Temperature ( °C )
1K
T
Fig 14.
Threshold Voltage vs. Temperature
Fig 13b.
Gate Charge Test Circuit
6
IRFR/U540ZPbF
100
10
1
Duty Cycle = Single Pulse
0.01
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
∆
Tj = 25°C due to
avalanche losses
0.05
0.10
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15.
Typical Avalanche Current vs.Pulsewidth
40
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 1%
Duty Cycle
= 21A
Single Pulse
I
D
30
20
10
0
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
∆
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche =
t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
Starting T
, Junction Temperature (°C)
J
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
D
T/ Z
thJC
Fig 16.
Maximum Avalanche Energy
I
av
= 2
D
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
vs
.
T
emperature
7
IRFR/U540ZPbF
Driver Gate Drive
P.W.
P
.
W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/dt controlled by R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 17.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 18a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b.
Switching Time Waveforms
8
IRFR/U540ZPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
E
X
AMP
L
E: T
H
IS
IS
A
N
I
RFR120
P
A
R
T NU
M
B
ER
W
I
T H
A
S S
E
M
B L Y
L
O
T CODE 1234
A
S
SE
M
B
LED
O
N W
W
1
6, 2001
IN
T
HE
A
S
SE
M
B
LY LI
N
E “A”
INTERN
A
T
I
O
NAL
RE
C
T
I
FIER
L
O
GO
DAT E
CODE
Y
E
A
R 1 =
2
001
W
E
E K
16
IRFR
1
20
116A
12
34
LI
N
E A
Note: “
P
” in
a
s
s
e
mb
l
y
l
in
e
p
o
s
i
t
ion
AS S E MB L Y
L
O
T CO
D
E
ind
i
c
ates “L
ead
–
Fr
e
e”
“P” in
a
s
s
e
mb
l
y
l
in
e
p
o
s
i
ti
o
n
i
n
d
i
c
ates
“L
e
ad
–
F r
e
e” qua
l
ifi
c
at
i
o
n to the cons ume
r
-l
e
vel
P
A
R
T NU
M
B
ER
DA
T
E
C
ODE
P =
DESI
G
N
A
T
ES LE
A
D-
F
REE
PR
O
D
U
C
T (O
P
TI
O
N
A
L
)
I
N
T
ER
N
A
T
I
O
NAL
RE
C
T
I
FIER
OR
IR
F
R
120
12 34
L
O
GO
P =
DESI
G
N
A
T
ES LE
A
D-
F
REE
PR
O
D
U
C
T Q
U
A
L
IFIED T
O
T
H
E
CO
N
S
U
M
E
R LE
V
E
L
(
O
P
TI
O
N
A
L
)
AS S
E
M
B L Y
L
O
T CO
D
E
Y
E
A
R 1 =
2
001
W
E
EK 16
A =
A
S S E MB L Y S
I
T E
C
O
D
E
Notes:
9
IRFR/U540ZPbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
P
A
R
T NUMBER
E
X
A
M
P
LE: THIS
IS
A
N
I
RFU120
I
N
T
ER
N
A
T
I
O
NAL
W
I
T H
A
S S E MB
L
Y
D
A
T
E
C
ODE
Y
E
A
R 1 =
2
001
W
E
EK
1
9
RE
C
T
IFIER
L
O
GO
IRFU120
119A
78
L
O
T CO
D
E 5678
A
S
SE
M
B
LED
O
N W
W
1
9, 2001
IN THE
A
S
SE
M
B
LY L
I
NE “
A
”
56
L
I
NE A
AS S
E
M
B
L Y
L
O
T CO
D
E
Note: “P” in a
s
s
e
mb
l
y li
n
e
p
o
s
i
t
i
o
n
indi
c
ates
L
e
ad
–
Fr
e
e”
OR
P
A
R
T NU
M
B
ER
D
A
T
E
C
ODE
P =
DE S I GNAT E S
L E AD-F R E E
PR
O
DUCT (OP
T
I
O
N
A
L
)
IN
T
ERN
A
T
I
O
NAL
RE
C
T
IFIER
L
O
GO
IRFU120
56 78
Y
E
A
R 1 =
2
001
A
S
SE
M
B
LY
L
O
T CO
D
E
WE E K
1
9
A=
A
S
SE
M
B
LY
SITE
C
O
D
E
Notes:
10
IRFR/U540ZPbF
D-Pak (TO-252AA)
T
a
pe & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
C
oss
eff. is a fixed capacitance that gives the same charging time
Repetitive rating;
pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.17mH
R
G
= 25
Ω
, I
AS
= 21A, V
GS
=10V. Part not
recommended for use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
ꢀ
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
When mounted on 1″ square PCB (FR-4 or G-10 Material) .
R
θ
is measured at T
J
approximately 90°C
Data and specifications subject to change without notice.
This product has been designed
for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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