Infineon-Technologies-IRFR7746TRPBF
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Strong
IR
FET™
IRFR7746PbF
IRFU7746PbF
HEXFET
®
Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
V
DSS
R
DS(on)
typ.
max
75V
9.5m
11.2m
59A
I
D (Silicon Limited)
I
D (Package Limited)
56A
D
S
Benefits
S
D
G
Improved Gate,
Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
G
D
S
Gate
Drain
Source
Standard Pack
Base part number
Package Type
Form
Orderable Part Number
Quantity
75
Tube
IRFR7746PbF
IRFR7746TRPbF
IRFU7746PbF
IRFR7746PbF
IRFU7746PbF
D-Pak
I-Pak
Tape and Reel
Tube
2000
75
30
25
20
15
10
5
60
50
40
30
20
10
I
= 35A
Limited by package
D
T
J
= 125°C
= 25°C
T
J
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
175
T
, Case Temperature (°C)
V
Gate -to -Source Voltage
(V)
C
GS,
Fig 2.
Maximum Drain Current vs. Case Temperature
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
www.irf.com
© 2014 International Rectifier
November 7, 2014
IRFR/U7746PbF
Absolute Maximum Rating
Symbol
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
59
42
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
D
@ T
C
= 25°C
I
DM
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
56
230*
99
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
W/°C
V
Linear Derating Factor
0.66
± 20
V
GS
Gate-to-Source Voltage
T
J
T
STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
-55 to
+ 175
300
°C
Avalanche Characteristics
E
AS (Thermally limited)
E
AS (Thermally limited)
I
AR
E
AR
116
160
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
mJ
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Typ.
–––
–––
–––
Max.
1.52
50
Units
Junction-to-Case
R
JC
R
JA
R
JA
Junction-to-Ambient (PCB
Mount)
Junction-to-Ambient
°C/W
110
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ.
Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
75
––– –––
53 –––
mV/°C Reference
to 25°C, I
D
= 1mA
9.5 11.2
V
V
GS
= 0V, I
D
= 250µA
–––
–––
V
(BR)DSS
/
T
J
R
DS(on)
V
GS
= 10V, I
D
= 35A
GS
= 6.0V, I
D
= 18A
m
V
––– 11.2 –––
2.1 –––
––– –––
––– ––– 150
––– ––– 100
––– –––
-100
V
V
GS(th)
I
DSS
Gate Threshold Voltage
3.7
1.0
V
DS
= V
GS
, I
D
= 100µA
DS
=75 V, V
GS
= 0V
V
DS
=75V,V
GS
= 0V,T
J
=125°C
V
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
V
V
GS
= 20V
GS
= -20V
I
GSS
R
G
nA
–––
1.6
–––
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A by
source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 190
µ
H, R
G
= 50
, I
AS
= 35A, V
GS
=10V.
I
SD
35A, di/dt
570A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
R
is measured at T
J
approximately 90°C.
.
C
.
When mounted on 1″ square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.please refer to application note to AN-994
:
http://www.irf.com/technical-info/appnotes/an-994.pdf
*
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50
, I
AS
= 18A, V
GS
=10V
Pulse drain current is limited at 224A by source bonding technology.
2
www.irf.com
© 2014 International Rectifier
November 7, 2014
IRFR/U7746PbF
Dynamic Electrical
Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min.
112
–––
–––
–––
–––
–––
–––
Typ. Max.
Units
Conditions
–––
59
–––
89
S
V
DS
= 10V, I
D
=35A
Q
g
I
D
= 35A
Q
gs
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
14
–––
–––
–––
–––
–––
V
DS
= 38V
V
GS
= 10V
nC
Q
gd
18
Q
sync
t
d(on)
t
r
41
7.9
30
V
DD
= 38V
I
D
= 35A
Rise Time
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
34
21
–––
–––
–––
–––
–––
R
G
= 2.7
V
GS
= 10V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3107
257
159
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz,
See Fig.7
pF
Effective Output Capacitance
(Energy Related)
C
oss eff.(ER)
C
oss eff.(TR)
–––
–––
234
299
–––
–––
V
GS
= 0V, VDS = 0V to 60V
V
GS
= 0V, VDS = 0V to 60V
Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Min.
Typ. Max.
Units
Conditions
MOSFET symbol
D
Continuous Source Current
(Body Diode)
I
S
–––
–––
59
showing the
A
G
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
I
SM
–––
–––
–––
–––
230*
1.2
S
V
SD
Diode Forward Voltage
V
T
J
= 25°C,I
S
= 35A,V
GS
= 0V
dv/dt
Peak Diode Recovery dv/dt
–––
–––
–––
–––
–––
–––
8.1
27
32
26
36
1.7
––– V/ns
T
J
= 175°C,I
S
= 35A,V
DS
= 75V
–––
–––
–––
–––
–––
T
J
= 25°C
V
DD
= 64V
I
F
= 35A,
t
rr
Reverse Recovery Time
ns
T
J
= 125°C
T
J
= 25°C
di/dt = 100A/µs
Q
rr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
T
J
= 125°C
T
J
= 25°C
I
RRM
3
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© 2014 International Rectifier
November 7, 2014
IRFR/U7746PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs
Tj = 175°C
PULSE WIDTH
60µs
Tj = 25°C
PULSE WIDTH
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4.
Typical Output Characteristics
Fig 3.
Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
I
= 35A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
= 25V
J
1
V
DS
60µs PULSE WIDTH
0.1
2
3
4
5
6
7
-60
-20
T
20
60
100
140
180
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6.
Normalized On-Resistance vs. Temperature
Fig 5.
Typical Transfer Characteristics
100000
10000
1000
100
14.0
V
C
= 0V,
f = 1 MHZ
GS
= C
+ C
, C
SHORTED
I
= 35A
V
iss
gs
gd ds
D
C
= C
12.0
10.0
8.0
rss
gd
= 60V
= 38V
DS
C
= C
+ C
oss
ds
gd
V
DS
VDS= 15V
C
iss
C
C
oss
rss
6.0
4.0
2.0
10
0.0
0.1
1
10
100
0
10 20 30 40 50 60 70 80
V
, Drain-to-Source Voltage (V)
DS
Q , Total
Gate Charge (nC)
G
Fig 8.
Typical Gate Charge vs.
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
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© 2014 International Rectifier
Gate-to-Source Voltage
4
November 7, 2014
IRFR/U7746PbF
1000
100
10
100
10
100µsec
Limited by Package
1msec
T
= 175°C
J
OPERATION IN THIS AREA
T
= 25°C
J
LIMITED BY R
(on)
DS
1
10msec
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.01
V
= 0V
GS
0.1
0.1
1
10
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
V
, Drain-to-Source Voltage (V)
DS
, Source-to-Drain Voltage (V)
SD
Fig 10.
Maximum Safe Operating Area
Fig 9.
Typical Source-Drain Diode Forward Voltage
0.6
94
Id = 1.0mA
92
0.5
0.4
0.3
0.2
0.1
0.0
90
88
86
84
82
80
78
76
0
10 20 30 40 50 60 70 80
Drain-to-Source Voltage (V)
-60
-20
20
60
100
140
180
T
, Temperature ( °C )
V
J
DS,
Fig 11.
Drain-to-Source Breakdown Voltage
Fig 12.
Typical C
oss
Stored Energy
50.0
VGS = 5.5V
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
0
50
I
100
150
200
, Drain Current (A)
D
Fig 13.
Typical On-Resistance vs. Drain Current
5
November 7, 2014
IRFR/U7746PbF
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
Notes:
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15.
Avalanche Current vs. Pulse Width
140
120
100
80
TOP
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
BOTTOM 1.0%
Duty Cycle
= 35A
I
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
60
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
40
6. I
av
= Allowable avalanche current.
7.
T = Allowable rise in junction temperature, not to exceed T
jmax
(assumed as 25°C in Figure 14, 15).
20
0
t
av
= Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche =
tav ·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
Starting T
, Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·I
av
) =
T/ Z
thJC
I
av
= 2
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)· av
t
Fig 16.
Maximum Avalanche Energy vs. Temperature
www.irf.com
© 2014 International Rectifier
6
November 7, 2014
IRFR/U7746PbF
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
14
12
10
8
I
= 24A
= 64V
F
V
R
T =
25°C
J
T =
125°C
J
6
ID = 100µA
ID = 250µA
ID = 1.0mA
ID = 10mA
ID = 1.0A
4
2
0
-60 -40 -20
0 20
40 60 80
100120140160180
0
100 200 300 400 500 600 700 800 90
0
1
000
T
, Temperature ( °C )
di /dt
(A/µs)
F
J
Fig 17.
Threshold Voltage vs. Temperature
Fig 18.
Typical Recovery Current vs. dif/dt
200
14
12
10
8
I
= 24A
= 64V
I
= 35A
= 64V
F
F
180
160
140
120
100
80
V
V
R
R
T =
25°C
T =
25°C
J
J
T =
125°C
J
T =
125°C
J
6
4
60
2
40
20
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt
(A/µs)
di /dt
(A/µs)
F
F
Fig 19.
Typical Recovery Current vs. dif/dt
Fig 20.
Typical Stored Charge vs. dif/dt
200
I
= 35A
= 64V
F
180
160
140
120
100
80
V
R
T =
25°C
J
T =
125°C
J
60
40
20
0
200
400
600
800
1000
di /dt
(A/µs)
F
Fig 21.
Typical Stored Charge vs. dif/dt
7
November 7, 2014
IRFR/U7746PbF
Fig 22.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
20V
I
0.01
t
p
AS
Fig 23a.
Unclamped Inductive Test Circuit
Fig 23b.
Unclamped Inductive Waveforms
Fig 24a.
Switching Time Test Circuit
Fig 24b.
Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b.
Gate Charge Waveform
Fig 25a.
Gate Charge Test Circuit
8
www.irf.com
© 2014 International Rectifier
November 7, 2014
IRFR/U7746PbF
D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS
IS AN IRFR120
PART NUMBER
WITH ASSEMBLY
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 1 =
2001
WEEK 16
IRFR120
116A
ASSEMBLED ON WW 16, 2001
IN THE ASSEMBLY LINE “A”
12
34
LINE A
Note: “P” in assembly line position
ASSEMBLY
LOT CODE
indicates “Lead-Free”
“P” in assembly line position indicates
“Lead-Free” qualification to the consumer-level
PART NUMBER
DATE CODE
P =
DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
OR
IRFR120
12 34
LOGO
P =
DESIGNATES LEAD-FREE
PRODUCT QUALIFIED TO THE
CONSUMER LEVEL (OPTIONAL)
ASSEMBLY
LOT CODE
YEAR 1 =
2001
WEEK 16
A =
ASSEMBLY SITE CODE
9
November 7, 2014
IRFR/U7746PbF
I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS
IS AN IRFU120
WITH ASSEMBLY
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 1 =
2001
WEEK 19
IRFU120
119A
78
LOT CODE 5678
ASSEMBLED ON WW 19, 2001
56
IN THE ASSEMBLY LINE “A”
LINE A
ASSEMBLY
LOT CODE
Note: “P” in assembly line position
indicates Lead-Free”
OR
PART NUMBER
DATE CODE
P =
DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56
78
YEAR 1 =
2001
ASSEMBLY
LOT CODE
WEEK 19
A =
A
SSEMBLY SITE CODE
November 7, 2014
IRFR/U7746PbF
D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
November 7, 2014
IRFR/U7746PbF
Qualification Information
†
Qualification Level
Industrial
(per JEDEC JESD47F)
††
D-Pak
I-Pak
Moisture Sensitivity Level
RoHS Compliant
MSL1
Yes
†
Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com/product-info/reliability/
†† Applicable
version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Updated E
AS (L =1mH)
= 160mJ
on page 2
Updated note 10
“Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50
, I
AS
= 18A, V
GS
=10V” on page 2
11/7/2014
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
November 7, 2014
