Infineon-Technologies-IRFS7430TRLPBF
| Part # | Infineon-Technologies-IRFS7430TRLPBF |
Download  | Infineon-Technologies-IRFS7430TRLPBF |
Strong
IR
FET
IRFS7430PbF
IRFSL7430PbF
HEXFET
®
Power MOSFET
Applications
V
DSS
R
DS(on)
typ.
max.
40V
0.97m
1.2m
D
S
l
Brushed motor drive applications
l
BLDC motor drive applications
l
Battery powered circuits
l
Half-bridge and full-bridge topologies
l
Synchronous rectifier applications
l
Resonant mode power supplies
l
OR-ing and redundant power switches
l
DC/DC and AC/DC converters
l
DC/AC inverters
G
426A
I
D
(Silicon Limited)
195A
I
D
(Package Limited)
D
D
S
Benefits
S
D
G
G
l
Improved gate,
avalanche and dynamic dV/dt
ruggedness
D
2
Pak
IRFS7430PbF
TO-262
IRFSL7430PbF
l
Fully characterized capacitance and avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt capability
l
Lead-free
G
Gate
D
Drain
S
Source
Base Part Number
Package Type
Standard Pack
Form
Tube
Orderable Part Number
Quantity
50
IRFSL7430PbF
IRFS7430PbF
TO-262
D2-Pak
IRFSL7430PbF
IRFS7430PbF
Tube
50
Tape and Reel Left
800
IRFS7430TRLPbF
6.0
4.0
2.0
0.0
500
400
300
200
100
0
I
= 100A
D
Limited By Package
T
= 125°C
J
T
= 25°C
J
4
6
8
10
12 14 16
18 20
25
50
75
100
125
150
175
T
, Case Temperature (°C)
C
V
Gate -to -Source Voltage
(V)
GS,
Fig 2.
Maximum Drain Current vs. Case Temperature
Fig 1.
Typical On-Resistance vs. Gate Voltage
www.irf.com
© 2014 International Rectifier
1
IRFS/SL7430PbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
Parameter
Max.
426
301
195
1524
Units
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
A
P
D
@T
C
= 25°C
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
375
2.5
± 20
W
W/°C
V
V
GS
T
J
-55 to
+ 175
T
S
T
G
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Avalanche Characteristics
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
E
AS
(
Thermally limited)
E
AS
(
Thermally limited)
I
AR
760
1452
mJ
See Fig. 15, 16, 22a, 22b
A
Repetitive Avalanche Energy
E
AR
mJ
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount, steady-state)
Typ.
–––
–––
Max.
0.40
40
Units
R
θ
JC
R
θ
JA
°C/W
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Δ
V
(BR)DSS
/
Δ
T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min.
40
–––
–––
–––
2.2
–––
–––
–––
–––
–––
Typ.
–––
0.014
0.97
1.2
–––
–––
–––
–––
–––
2.1
Max.
–––
–––
1.2
–––
3.9
Units
V
V/°C
m
Ω
Conditions
V
GS
= 0V, I
D
= 250
μ
A
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 100A
V
GS
= 6.0V, I
D
= 50A
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
V
μ
A
1.0
150
100
-100
–––
I
GSS
R
G
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA
V
GS
= 20V
V
GS
= -20V
Ω
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
ꢀ
Pulse width
≤
400
μ
s; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
.
some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating;
pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.15mH
R
G
= 50
Ω
, I
AS
= 100A, V
GS
=10V.
I
SD
≤
100A, di/dt
≤
990A/
μ
s, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C.
.
Limited by T
Jmax
starting T
J
= 25°C, L= 1mH, R
G
= 50
Ω
, I
AS
= 54A, V
GS
=10V.
When mounted on 1″ square PCB (FR-4 or G-10 Material).
For recom-
mended footprint and soldering techniques refer to application note #AN-994.
www.irf.com
© 2014 International Rectifier
November 6, 2014
2
IRFS/SL7430PbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter
Forward Transconductance
Min.
150
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
300
77
98
202
32
105
160
100
Max.
–––
460
–––
–––
–––
–––
–––
–––
–––
Units
S
nC
Conditions
gfs
Q
g
V
DS
= 10V, I
D
= 100A
I
D
= 100A
DS
=20V
V
GS
= 10V
D
= 100A, V
DS
=0V, V
GS
= 10V
V
DD
= 20V
D
= 30A
Total Gate Charge
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Total Gate Charge Sync. (Q
g
– Q
gd
)
Turn-On Delay Time
V
I
ns
Rise Time
I
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 2.7
Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz
C
i
s
s
C
o
s
s
C
rss
C
o
s
s
eff. (ER)
C
o
s
s
eff. (TR)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
––– 14240 –––
pF
–––
–––
–––
–––
2130
1460
2605
2920
–––
–––
–––
–––
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
Diode Characteristics
Symbol
Parameter
Min.
–––
Typ.
–––
Max.
426
Units
A
Conditions
MOSFET symbol
D
S
I
S
Continuous Source Current
(Body Diode)
showing the
integral reverse
G
I
SM
Pulsed Source Current
(Body Diode)
–––
–––
1524
A
p-n junction diode.
V
SD
dv/dt
t
rr
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
–––
–––
–––
–––
–––
–––
–––
0.86
2.7
52
52
97
1.2
–––
–––
–––
–––
–––
–––
V
V/ns
ns
T
J
= 25°C, I
S
= 100A, V
GS
= 0V
T
J
= 175°C, I
S
= 100A, V
DS
= 40V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
R
= 34V,
I
F
= 100A
di/dt = 100A/
μ
s
Q
rr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
97
2.3
I
RRM
3
www.irf.com
© 2014 International Rectifier
November 6, 2014
IRFS/SL7430PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60
μ
s PULSE WIDTH
≤
60
μ
s PULSE WIDTH
≤
Tj = 175°C
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 3.
Typical Output Characteristics
Fig 4.
Typical Output Characteristics
1000
2.0
I
= 100A
= 10V
D
V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
GS
100
10
T
= 25°C
J
T =
175°C
J
V
= 25V
DS
≤
60
μ
s PULSE WIDTH
1.0
2
3
4
5
6
7
-60 -40 -20
0 20
40 60 80
100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6.
Normalized On-Resistance vs. Temperature
Fig 5.
Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I =
100A
D
C
C
C
+ C
, C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
gd
= C
+ C
V
V
= 32V
= 20V
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
C
oss
rss
1
10
, Drain-to-Source Voltage (V)
100
0
50 100
150 200 250 300 350 400
V
DS
Q ,
Total Gate Charge (nC)
G
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
www.irf.com
© 2014 International Rectifier
4
IRFS/SL7430PbF
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100
μ
sec
1msec
T
= 25°C
10msec
DC
J
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-toSource Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 10.
Maximum Safe Operating Area
Fig 9.
Typical Source-Drain Diode
Forward Voltage
2.5
47
46
45
44
43
42
41
40
Id = 1.0mA
V
= 0V to 32V
DS
2.0
1.5
1.0
0.5
0.0
0
5
10 15 20 25 30 35 40 45
Drain-to-Source Voltage (V)
-60 -40 -20
0 20
40 60 80
100120140160180
T ,
Temperature ( °C )
J
V
DS,
Fig 11.
Drain-to-Source Breakdown Voltage
Fig 12.
Typical C
OSS
Stored Energy
6.0
V
V
V
V
V
= 5.5V
= 6.0V
= 7.0V
= 8.0V
=10V
GS
GS
GS
GS
GS
4.0
2.0
0.0
0
200
400
600
800 1000
1200
I ,
Drain Current (A)
D
Fig 13.
Typical On-Resistance vs. Drain Current
5
November 6, 2014
IRFS/SL7430PbF
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Δ
Tj = 150°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15.
Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
Δ
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche =
t
av
·f
800
700
600
500
400
300
200
100
0
TOP
BOTTOM 1.0%
Duty Cycle
= 100A
Single Pulse
I
D
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 14)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
D
T/ Z
thJC
I
av
= 2
D
T/ [1.3·BV·Z
th
]
25
50
75
100
125
150
175
E
AS (AR)
= P
D (ave)
·t
av
Starting T
, Junction Temperature (°C)
J
Fig 16.
Maximum Avalanche Energy vs. Temperature
www.irf.com
© 2014 International Rectifier
November 6, 2014
6
IRFS/SL7430PbF
4.0
3.5
3.0
2.5
2.0
1.5
1.0
12
10
8
I =
60A
F
V
= 34V
R
T =
25°C
J
T =
125°C
J
6
I
I
I
= 250
μ
A
= 1.0mA
= 1.0A
D
D
D
4
2
0
-75 -50 -25
0
25 50 75
100 125 150 175
0
200
400
600
800
1000
T ,
Temperature ( °C )
di /dt
(A/
μ
s)
J
F
Fig. 18
– Typical Recovery Current vs. di
f
/dt
Fig 17.
Threshold Voltage vs. Temperature
12
300
I =
100A
F
I =
60A
F
V
= 34V
V
= 34V
R
10
8
R
250
200
150
100
50
T =
25°C
T =
25°C
J
J
T =
125°C
J
T =
125°C
J
6
4
2
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt
(A/
μ
s)
di /dt
(A/
μ
s)
F
F
Fig. 19
– Typical Recovery Current vs. di
f
/dt
Fig. 20
– Typical Stored Charge vs. di
f
/dt
260
I =
100A
F
V
= 34V
R
220
180
140
100
60
T =
25°C
J
T =
125°C
J
0
200
400
600
800
1000
di /dt
(A/
μ
s)
F
Fig. 21
– Typical Stored Charge vs. di
f
/dt
7
November 6, 2014
IRFS/SL7430PbF
Driver Gate Drive
P.W.
P
.
W.
D =
D.U.T
Period
Period
+
–
*
=10V
V
GS
Circui
t
L
ayou
t
C
onsiderations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/d
t
c
ontrolle
d
b
y
R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inducto
r
C
urrent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 22.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
V
G
S
Ω
0.01
t
p
I
AS
Fig 22b.
Unclamped Inductive Waveforms
Fig 22a.
Unclamped Inductive Test Circuit
R
D
V
DS
V
DS
90%
V
GS
D.U.T.
R
G
+
V
DD
–
V
GS
10%
Puls
e
W
idth
≤ 1
µs
Duty Facto
r
≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 23a.
Switching Time Test Circuit
Fig 23b.
Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.
T
.
Vds
Vgs
50K
Ω
.2
μ
F
12V
.3
μ
F
+
V
DS
D.U.
T
.
–
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 24a.
Gate Charge Test Circuit
www.irf.com
© 2014 International Rectifier
Fig 24b.
Gate Charge Waveform
8
IRFS/SL7430PbF
D
2
Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D
2
Pak (TO-263AB) Part Marking Information
THIS IS
A
N
I
R
F
5
30S WI
T
H
P
A
R
T NU
M
B
ER
L
O
T CODE 8024
IN
T
ERN
A
T
I
O
N
A
L
RE
C
T
I
F
I
ER
L
O
GO
AS
S
E
M
B
LED
O
N WW 02, 2000
IN
T
HE
A
S
S
E
M
B
LY LINE “L”
F
5
30S
DA
T
E
C
O
D
E
YE
A
R 0 =
2000
WE
E
K
02
AS S E MB L Y
L
O
T CODE
LINE L
OR
P
A
R
T NU
M
B
ER
IN
T
ERN
A
T
I
O
N
A
L
RE
C
T
I
F
I
ER
L
O
GO
F
5
30S
DA
T
E
C
O
D
E
P =
DE S IGNAT E S
L E AD
– F
R
E E
PR
O
D
U
C
T (O
P
T
I
ONA
L
)
AS S E MB L Y
L
O
T CODE
YE
A
R 0 =
2000
WE
E
K
02
A =
AS S E MB L Y S
I
T E
C
ODE
9
www.irf.com
© 2014 International Rectifier
November 6, 2014
IRFS/SL7430PbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
E X
A
M
P
LE :
THIS IS
A
N I
R
L
3
103L
L
O
T CO
D
E 1789
P
A
R
T NU
M
B
E R
INT ERN
A
T
I
ONAL
RE
C
T I
F
I
E R
L
O
GO
AS S
E
M
B
L
E D
O
N WW 19, 1997
IN T HE
A
S S E MB
L
Y
L
I
NE “C”
DAT E
CODE
YE AR
7 =
1997
WE
E
K
1
9
AS S E M
B
LY
L
O
T CODE
LINE C
OR
P
A
R
T
N
U
M
B
E R
INT E RN
A
T IONAL
RE
C
T IF IE R
L
O
GO
D
A
T
E
C
O
D
E
P =
DE S IGNAT E S
L
E
A
D
-F R EE
PR
O
D
U
C
T (O
P
TI
O
NA
L
)
YE
A
R 7 =
1997
AS S E MB
L
Y
L
O
T CODE
WE E K
19
A =
AS S
E
M
B
L
Y
S IT E
CODE
November 6, 2014
10
IRFS/SL7430PbF
D
2
Pak (TO-263AB)
T
a
pe & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
11
www.irf.com
© 2014 International Rectifier
November 6, 2014
IRFS/SL7430PbF
Qualification information
†
Qualification level
Industrial
(per JEDEC JESD47F
††
guidelines)
Moisture Sensitivity Level
D2Pak
MS L 1
(
p
er
J
E
D
E
C J
–
S
T
D
-020D
††
)
Not app
l
i
c
ab
l
e
TO-262
RoHS compliant
Yes
Qualification standards can be found at International Rectifiers web site:
http://www.irf.com/product-info/reliability/
Applicable
version of JEDEC standard at the time of product release.
Revision History
Date
Comment
•
Updated E
AS (L =1
m
H)
= 1452mJ on page 2
11/6/2014
•
U
pdated note 9
“Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50
Ω
, I
AS
= 54A, V
GS
=10V”. on
page 2
•
Updated package outline on page 9 & 10
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
www.irf.com
© 2014 International Rectifier
November 6, 2014
12
