Infineon-Technologies-IRFS7434TRL7PP
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Strong
IR
FET™
IRFS7434-7PPbF
Application
HEXFET
®
Power MOSFET
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
V
DSS
40V
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
R
DS(on) typ.
0.70m
1.0m
362A
max
I
D (Silicon Limited)
I
D (Package Limited)
240A
Benefits
Improved Gate,
Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
D
S
Gate
Drain
Source
Standard Pack
Form
Tube
Base part number
Package Type
Orderable Part Number
Quantity
50
IRFS7434-7PPbF
IRFS7434TRL7PP
IRFS7434-7PPbF
D
2
Pak-7Pin
Tape and Reel Left
800
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
400
350
300
250
200
150
100
50
Limited By
Package
I
= 100A
D
T
T
= 125°C
= 25°C
J
J
0
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
T
, Case Temperature (°C)
C
V
Gate -to -Source Voltage
(V)
GS,
Fig 2.
Maximum Drain Current vs. Case Temperature
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
© 2014 International Rectifier
November 19, 2014
IRFS7434-7PPbF
Absolute Maximium Rating
Symbol
Parameter
Max.
362
229
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
D
@ T
C
= 25°C
I
DM
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
240
1300*
245
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
W/°C
V
Linear Derating Factor
1.96
V
GS
Gate-to-Source Voltage
± 20
T
J
T
STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
-55 to
+ 150
300
°C
Avalanche Characteristics
E
AS (Thermally limited)
E
AS (Thermally limited)
I
AR
E
AR
384
880
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
mJ
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Typ.
–––
–––
Max.
0.51
40
Units
°C/W
Junction-to-Case
Junction-to-Ambient
R
JC
R
JA
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min. Typ.
Max. Units
40 –––
–––
––– 0.03 ––– V/°C
Reference to 25°C, I
D
= 1mA
Conditions
V
GS
= 0V, I
D
= 250µA
V
V
(BR)DSS
/
T
J
–––
–––
2.2
0.7
1.5
3.0
1.0
–––
3.9
1.0
V
V
GS
= 10V, I
D
= 100A
GS
= 6V, I
D
= 50A
R
DS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
m
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
DS
=40 V, V
GS
= 0V
V
DS
=40V,V
GS
= 0V,T
J
=125°C
––– –––
V
I
DSS
Drain-to-Source Leakage Current
µA
––– ––– 150
––– ––– 100
––– –––
-100
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
V
V
GS
= 20V
GS
= -20V
I
GSS
nA
R
G
–––
2.0
–––
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A by
source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.077mH, R
G
= 50
, I
AS
= 100A, V
GS
=10V.
I
SD
100A, di/dt
969A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50
, I
AS
= 42A, V
GS
=10V.
When mounted on 1″ square PCB (FR-4 or G-10 Material).
Please refer to AN-994 for more details:
*
Pulse drain current is limited by source bonding technology.
2
© 2014 International Rectifier
November 19, 2014
IRFS7434-7PPbF
Dynamic Electrical
Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ.
Max. Units
Conditions
V
DS
= 10V, I
D
=100A
I
D
= 100A
156 –––
––– 210
––– 55
––– 66
––– 144
––– 23
––– 125
–––
315
–––
–––
–––
–––
–––
S
Q
g
Q
gs
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
V
DS
= 20V
nC
Q
gd
V
GS
= 10V
Q
sync
t
d(on)
t
r
V
DD
= 26V
I
D
= 100A
Rise Time
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
––– 107
––– 85
–––
–––
R
G
= 2.6
V
GS
= 10V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 10250
–––
––– 1540
–––
––– 1060
–––
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz,
See Fig.7
pF
V
GS
= 0V, VDS = 0V to 32V
C
oss eff.(ER)
Effective Output Capacitance (Energy Related)
––– 1880
–––
See Fig.11
C
oss eff.(TR)
Output Capacitance (Time Related)
––– 2147
–––
V
GS
= 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
I
S
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ.
Max. Units
Conditions
MOSFET symbol
D
––– ––– 362
A
––– ––– 1300*
showing the
G
integral reverse
p-n junction diode.
I
SM
S
V
SD
Diode Forward Voltage
––– 0.9
1.3
V
T
J
= 25°C,I
S
= 100A,V
GS
= 0V
dv/dt
Peak Diode Recovery dv/dt
––– 3.0
––– 44
––– 46
––– 43
––– 44
––– 1.9
––– V/ns
T
J
= 150°C,I
S
=100A,V
DS
= 40V
–––
–––
–––
–––
–––
T
J
= 25°C
V
DD
= 34V
I
F
= 100A,
t
rr
Reverse Recovery Time
ns
T
J
= 125°C
T
J
= 25°C
di/dt = 100A/µs
Q
rr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
T
J
= 125°C
I
RRM
T
J
= 25°C
3
© 2014 International Rectifier
November 19, 2014
IRFS7434-7PPbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs
PULSE WIDTH
60µs
PULSE WIDTH
Tj = 25°C
Tj = 150°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 4.
Typical Output Characteristics
Fig 3.
Typical Output Characteristics
1000
100
10
2.0
1.6
1.2
0.8
0.4
I
= 100A
= 10V
D
V
GS
T
= 150°C
J
T
= 25°C
J
1
V
= 10V
DS
60µs PULSE WIDTH
0.1
2
3
4
5
6
7
8
-60 -40 -20
T
0
20 40 60 80
100 120 140 160
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6.
Normalized On-Resistance vs. Temperature
Fig 5.
Typical Transfer Characteristics
100000
10000
1000
14.0
V
C
= 0V,
f = 1 MHZ
GS
I
= 100A
= C
+ C
, C
SHORTED
D
iss
gs
gd ds
12.0
10.0
8.0
C
= C
rss
gd
V
V
= 32V
DS
DS
C
= C
+ C
oss
ds
gd
= 20V
C
iss
C
oss
C
6.0
rss
4.0
2.0
100
0.0
0.1
1
10
100
0
50
100
150
200
250
300
V
, Drain-to-Source Voltage (V)
Q , Total
Gate Charge (nC)
DS
G
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
© 2014 International Rectifier
4
IRFS7434-7PPbF
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
T
= 150°C
J
Limited by Package
T
= 25°C
J
1msec
10msec
1
1
Tc = 25°C
Tj = 150°C
Single Pulse
DC
V
= 0V
GS
0.1
0.1
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
, Drain-to-Source Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 10.
Maximum Safe Operating Area
Fig 9.
Typical Source-Drain Diode Forward Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
48
Id = 1.0mA
47
46
45
44
43
42
41
40
-5
0
5
10 15 20 25 30 35 40 45
-60
-20
20
60
100
140
180
T
, Temperature ( °C )
V
Drain-to-Source Voltage (V)
J
DS,
Fig 12.
Typical C
oss
Stored Energy
Fig 11.
Drain-to–Source Breakdown Voltage
10.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
8.0
6.0
4.0
2.0
0.0
0
100
200
300
400
500
I ,
Drain Current (A)
D
Fig 13.
Typical On-Resistance vs. Drain Current
5
November 19, 2014
IRFS7434-7PPbF
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 125°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15.
Typical Avalanche Current vs. Pulse width
400
350
300
250
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
TOP
Single Pulse
BOTTOM 1.0%
Duty Cycle
I
= 100A
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T = Allowable rise in junction temperature, not to exceed T
jmax
(assumed as 25°C in Figure 14, 15).
t
av
= Average time in avalanche.
0
D = Duty cycle in avalanche =
tav ·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·I
av
) =
T/ Z
thJC
I
av
= 2
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)· av
t
Fig 16.
Maximum Avalanche Energy vs. Temperature
www.irf.com
© 2014 International Rectifier
6
November 19, 2014
IRFS7434-7PPbF
12
10
8
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
= 60A
= 34V
F
V
R
T =
25°C
J
T =
125°C
J
6
ID = 250µA
ID = 1.0mA
ID = 1.0A
4
2
0
0
200
400
600
800
1000
-75 -50 -25
0
25 50 75
100 125 150
di /dt
(A/µs)
T
, Temperature ( °C )
F
J
Fig 17.
Threshold Voltage vs. Temperature
Fig 18.
Typical Recovery Current vs. dif/dt
12
10
8
350
I
= 100A
= 34V
I
= 60A
= 34V
F
F
V
V
R
300
250
200
150
100
50
R
T =
25°C
T =
25°C
J
J
T =
125°C
J
T =
125°C
J
6
4
2
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt
(A/µs)
di /dt
(A/µs)
F
F
Fig 20.
Typical Stored Charge vs. dif/dt
Fig 19.
Typical Recovery Current vs. dif/dt
300
I
= 100A
= 34V
F
V
250
200
150
100
50
R
T =
25°C
J
T =
125°C
J
0
0
200
400
600
800
1000
di /dt
(A/µs)
F
Fig 21.
Typical Stored Charge vs. dif/dt
7
November 19, 2014
IRFS7434-7PPbF
Fig 22.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
20V
I
0.01
t
p
AS
Fig 23a.
Unclamped Inductive Test Circuit
Fig 23b.
Unclamped Inductive Waveforms
Fig 24a.
Switching Time Test Circuit
Fig 24b.
Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b.
Gate Charge Waveform
Fig 25a.
Gate Charge Test Circuit
8
© 2014 International Rectifier
November 19, 2014
IRFS7434-7PPbF
D
2
Pak-7Pin Package
Outline
(Dimensions are shown in millimeters (inches))
9
© 2014 International Rectifier
November 19, 2014
IRFS7434-7PPbF
D
2
Pak-7Pin Part
Marking Information
D2Pak-7Pin Tape and Reel
© 2014 International Rectifier
November 19, 2014
IRFS7434-7PPbF
Qualification Information
†
Qualification Level
Industrial
Yes
D
2
Pak-7Pin
MSL1
Moisture Sensitivity Level
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com/product-info/reliability/
†† Applicable
version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Updated E
AS (L =1mH)
= 880mJ
on page 2
Updated note 9
“Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50
, I
AS
= 42A, V
GS
=10V”. on
page 2
11/19/2014
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
© 2014 International Rectifier
November 19, 2014
