Infineon-Technologies-IRFS7434TRLPBF
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Strong
IR
FET
IRFS7434PbF
IRFSL7434PbF
Applications
HEXFET
®
Power MOSFET
l
Brushed Motor drive applications
l
BLDC Motor drive applications
l
Battery powered circuits
l
Half-bridge and full-bridge topologies
l
Synchronous rectifier applications
l
Resonant mode power supplies
l
OR-ing and redundant power switches
l
DC/DC and AC/DC converters
l
DC/AC Inverters
V
DSS
40V
D
R
DS(on)
typ.
max.
1.25m
Ω
1.6m
320A
Ω
G
I
D
(Silicon Limited)
S
195A
I
D
(Package Limited)
D
D
S
Benefits
S
D
G
G
l
Improved Gate,
Avalanche and Dynamic dV/dt
D
2
Pak
TO-262
IRFSL7434PbF
Ruggedness
IRFS7434PbF
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
G
Gate
D
Drain
S
Source
Ordering Information
Standard Pack
Form
Base part number
Package Type
Complete Part Number
Quantity
I
R
FSL7434PbF
I
R
FS7434PbF
TO
–
262
D2Pak
Tube
Tube
Tape and Reel Left
50
50
800
I
R
FSL7434PbF
I
R
FS7434PbF
IRFS7434TRLPbF
5
4
3
2
1
0
350
300
250
200
150
100
50
I
= 100A
D
Limited By
Package
T
= 125°C
J
T =
25°C
J
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
175
T
, Case Temperature (°C)
V
Gate -to -Source Voltage
(V)
C
GS,
Fig 2.
Maximum Drain Current vs. Case Temperature
Fig 1.
Typical On-Resistance vs. Gate Voltage
www.irf.com
© 2014 International Rectifier
1
IRFS/SL7434PbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
320
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
226
A
195
1270 *
294
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
W/°C
V
Linear Derating Factor
1.96
V
GS
dv/dt
T
J
Gate-to-Source Voltage
± 20
Peak Diode Recovery
5.0
V/ns
Operating Junction and
-55 to
+ 175
T
S
T
G
Storage Temperature Range
°C
mJ
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Avalanche Characteristics
E
AS (Thermally limited)
E
AS (Thermally limited)
I
AR
490
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
1098
A
See Fig. 14, 15 , 22a, 22b
E
AR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount) , D
2
Pak
Typ.
Max.
0.5
Units
R
θ
JC
–––
–––
°C/W
R
θ
JA
40
Static @ T
J
= 25°C (unless otherwise specified)
Conditions
V
GS
= 0V, I
D
= 250
μ
A
Symbol
Parameter
Min.
40
Typ.
–––
32
Max.
–––
–––
1.6
Units
V
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Δ
V
(BR)DSS
/
Δ
T
J
–––
–––
mV/°C Reference
to 25°C, I
D
= 5mA
R
DS(on)
1.25
1.8
m
Ω
m
Ω
V
V
GS
= 10V, I
D
= 100A
V
GS
= 6.0V, I
D
= 50A
V
DS
= V
G
S
, I
D
= 250
μ
A
V
DS
= 40V, V
GS
= 0V
–––
3.9
V
GS(th)
I
DSS
Gate Threshold Voltage
2.2
–––
–––
–––
–––
–––
3.0
Drain-to-Source Leakage Current
–––
–––
–––
–––
2.1
1.0
μ
A
150
100
-100
–––
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
GS
= 20V
V
GS
= -20V
I
GSS
R
G
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
V
nA
Ω
Notes:
ꢀ
Pulse width
≤
400
μ
s; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A
by source
.
bonding technology
. Note that current limitations arising from
heating of the device leads may occur with some lead mounting
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
arrangements.
(Refer to AN-1140)
R
θ
is measured at T
J
approximately 90°C.
Limited by T
Jmax
starting T
J
= 25°C, L= 1mH, R
G
= 50
Ω
, I
AS
= 47A, V
GS
=10V.
Repetitive rating;
pulse width limited by max. junction
temperature.
When mounted on 1″ square PCB (FR-4 or G-10 Material).
Please refer to AN-994 for more details:
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.099mH
R
G
= 50
Ω
, I
AS
= 100A, V
GS
=10V.
I
SD
≤
100A, di/dt
≤
1307A/
μ
s, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
∗
Pulse drain current is limited at 780A by source bonding technology.
November 19, 2014
2
IRFS/SL7434PbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter
Forward Transconductance
Min.
211
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
216
51
Max.
–––
324
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
S
Conditions
V
DS
= 10V, I
D
= 100A
I
D
= 100A
gfs
Q
g
Total Gate Charge
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Total Gate Charge Sync. (Q
g
– Q
gd
)
Turn-On Delay Time
V
DS
=20V
GS
= 10V
nC
ns
77
V
139
24
I
D
= 100A, V
DS
=0V, V
GS
= 10V
V
DD
= 20V
Rise Time
68
I
D
= 30A
t
d(off)
t
f
Turn-Off Delay Time
115
68
R
G
= 2.7
Ω
GS
= 10V
V
GS
= 0V
DS
= 25V
ƒ = 1.0 MHz,
See Fig. 5
Fall Time
V
C
i
s
s
C
o
s
s
C
rss
Input Capacitance
10820
1540
1140
1880
2208
Output Capacitance
V
pF
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
C
o
s
s
eff. (ER)
C
o
s
s
eff. (TR)
V
GS
= 0V, V
DS
= 0V to 32V
, See Fig. 12
GS
= 0V, V
DS
= 0V to 32V
V
Diode Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
D
I
S
Continuous Source Current
MOSFET symbol
–––
–––
320
(Body Diode)
showing the
A
G
I
SM
Pulsed Source Current
integral reverse
–––
–––
1270*
S
(Body Diode)
p-n junction diode.
V
SD
dv/dt
t
rr
Diode Forward Voltage
Peak Diode Recovery
–––
–––
–––
–––
–––
–––
–––
0.9
5.0
38
1.3
–––
–––
–––
–––
–––
–––
V
T
J
= 25°C, I
S
= 100A, V
GS
= 0V
T
J
= 175°C, I
S
= 100A, V
DS
= 40V
V/ns
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
R
= 34V,
ns
37
I
F
= 100A
di/dt = 100A/
μ
s
Q
rr
50
nC
A
50
I
RRM
1.9
www.irf.com
© 2014 International Rectifier
November 19, 2014
3
IRFS/SL7434PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
1
4.5V
60
μ
s
≤
60
μ
s
Tj = 25°C
PULSE WIDTH
Tj = 175°C
PULSE WIDTH
≤
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 3.
Typical Output Characteristics
Fig 4.
Typical Output Characteristics
1000
100
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 100A
= 10V
D
V
GS
T
= 175°C
J
T
= 25°C
J
1
V
= 10V
DS
≤
60
μ
s PULSE WIDTH
0.1
2
4
6
8
10
-60
-20
20
60
100
140
180
T
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig 6.
Normalized On-Resistance vs. Temperature
Fig 5.
Typical Transfer Characteristics
14.0
1000000
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
I =
100A
D
C
C
C
+ C
, C
SHORTED
ds
iss
gs
gd
12.0
10.0
8.0
= C
rss
oss
gd
V
= 32V
= 20V
DS
= C
+ C
ds
gd
V
DS
C
iss
6.0
C
C
oss
rss
4.0
2.0
0.0
100
0
50
100
150
200
250
300
0.1
1
10
100
Q ,
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
4
IRFS/SL7434PbF
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100
μ
sec
1msec
Limited By Package
T
= 25°C
J
10msec
DC
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 10.
Maximum Safe Operating Area
Fig 9.
Typical Source-Drain Diode
Forward Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
Id = 5.0mA
V
= 0V to 32V
DS
49
48
47
46
45
44
43
42
41
40
0
5
10 15 20 25 30 35 40 45
-60
-20
20
60
100
140
180
T
, Temperature ( °C )
V
Drain-to-Source Voltage (V)
J
DS,
Fig 11.
Drain-to-Source Breakdown Voltage
Fig 12.
Typical C
OSS
Stored Energy
20.0
V
= 6.0V
GS
V
= 5.5V
GS
15.0
10.0
5.0
VGS = 7.0V
VGS = 8.0V
VGS = 10V
0.0
0
100
200
300
400
500
I ,
Drain Current (A)
D
Fig 13.
Typical On-Resistance vs. Drain Current
November 19, 2014
5
IRFS/SL7434PbF
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Δ
Tj = 150°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Δ
Τ
j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14.
Avalanche Current vs.Pulse width
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
Δ
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche =
t
av
·f
600
500
400
300
200
100
0
TOP
BOTTOM 1.0%
Duty Cycle
= 100A
Single Pulse
I
D
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
D
T/ Z
thJC
I
av
= 2
D
T/ [1.3·BV·Z
th
]
25
50
75
100
125
150
175
E
AS (AR)
= P
D (ave)
·t
av
Starting T
, Junction Temperature (°C)
J
Fig 15.
Maximum Avalanche Energy vs. Temperature
November 19, 2014
6
IRFS/SL7434PbF
10
8
4.5
3.5
2.5
1.5
0.5
I =
60A
F
V
= 34V
R
T =
25°C
J
T =
125°C
J
6
4
ID = 250
μ
A
ID = 1.0mA
ID = 1.0A
2
0
0
200
400
600
800
1000
-75
-25
25
75
125
175
225
di /dt
(A/
μ
s)
T ,
Temperature ( °C )
F
J
Fig. 17
– Typical Recovery Current vs. di
f
/dt
Fig 16.
Threshold Voltage vs. Temperature
10
240
220
200
180
160
140
120
100
80
I =
100A
F
I =
60A
F
V
= 34V
V
= 34V
R
R
8
6
4
2
0
T =
25°C
T =
25°C
J
J
T =
125°C
J
T =
125°C
J
60
40
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt
(A/
μ
s)
di /dt
(A/
μ
s)
F
F
Fig. 18
– Typical Recovery Current vs. di
f
/dt
Fig. 19
– Typical Stored Charge vs. di
f
/dt
200
I =
100A
F
V
= 34V
R
160
120
80
T =
25°C
J
T =
125°C
J
40
0
0
200
400
600
800
1000
di /dt
(A/
μ
s)
F
Fig. 20
– Typical Stored Charge vs. di
f
/dt
November 19, 2014
7
IRFS/SL7434PbF
Driver Gate Drive
P.W.
P
.
W.
D =
D.U.T
Period
Period
+
–
*
=10V
V
GS
Circui
t
L
ayou
t
C
onsiderations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/d
t
c
ontrolle
d
b
y
R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inducto
r
C
urrent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 21.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
V
G
S
Ω
0.01
t
p
I
AS
Fig 22b.
Unclamped Inductive Waveforms
Fig 22a.
Unclamped Inductive Test Circuit
R
D
V
DS
V
DS
90%
V
GS
D.U.T.
R
G
+
V
DD
–
V
GS
10%
Puls
e
W
idth
≤ 1
µs
Duty Facto
r
≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 23a.
Switching Time Test Circuit
Fig 23b.
Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.
T
.
Vds
Vgs
50K
Ω
.2
μ
F
12V
.3
μ
F
+
V
DS
D.U.
T
.
–
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 24a.
Gate Charge Test Circuit
Fig 24b.
Gate Charge Waveform
8
IRFS/SL7434PbF
D
2
Pa
k
(
TO-263AB
)
P
ackag
e
O
utline
Dimensions are shown in millimeters (inches)
D
2
Pak (TO-263AB) Part Marking Information
THIS IS
A
N
I
R
F
5
30S WI
T
H
P
A
R
T
N
UMBER
L
O
T CODE 8024
IN
T
ERN
A
T
I
ON
A
L
RE
C
T
I
F
IER
L
O
GO
A
S
SE
M
B
LED
O
N WW 02, 2000
IN
T
HE
A
S
SE
M
B
LY LINE
“
L
”
F
5
30S
D
A
T
E
C
ODE
YE
A
R 0 =
2
000
W
E
EK 02
A
S
SE
M
B
LY
L
O
T CODE
LINE L
OR
P
A
R
T
N
UMBER
IN
T
ERN
A
T
I
ONAL
RE
C
T
I
F
I
E
R
L
O
GO
F
5
30S
D
A
T
E
C
ODE
P =
D
E
S
I
GNA
T
ES
LE
A
D –
F
REE
PR
O
D
U
C
T (O
P
T
I
O
N
A
L
)
Y
E
A
R 0 =
2
000
AS S E MB L Y
L
O
T CODE
W
E
EK 02
A =
A
S
SE
M
B
LY SITE
C
ODE
www.irf.com
© 2014 International Rectifier
November 19, 2014
9
IRFS/SL7434PbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
E XAM
P
LE :
T HIS
IS
A
N IR
L
3103L
L OT
CODE 1789
P
A
R T
N
U
M
B E R
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB
L
E D
O
N WW 19, 1997
IN T
H E
AS S E MB
L
Y
L
I
NE
“C”
DAT E
CODE
YE
A
R 7 =
1
997
WEE K
19
AS S E M
B
LY
L
O
T CODE
LINE C
OR
P
A
R T
N
U
M
B E R
INT E RN
A
T IONAL
R
E
C
T IF IE R
L OGO
DAT E
CODE
P =
D
ES I
G
N
A
T E S
L
E
A
D
-F R E E
PR ODU CT
(OPT IONAL)
YE AR
7 =
1997
AS S E MB
L
Y
L
O
T CODE
WEE K
19
A =
AS S E MB
L
Y
S IT E
C
O
D
E
November 19, 2014
10
IRFS/SL7434PbF
D
2
Pak (TO-263AB)
T
a
pe & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
www.irf.com
© 2014 International Rectifier
November 19, 2014
11
IRFS/SL7434PbF
Qualification information
†
Industrial
(per JEDEC JESD47F )††
Qualification le
v
e
l
D
2
Pak
MS L 1
N/A
Moisture Sensitivity Level
RoHS
c
o
m
pliant
TO-262
Yes
Qualification standards can be found at International Rectifiers web site:
http://www.irf.com/product-info/reliability
Applicable
version of JEDEC standard at the time of product release.
Revision History
Date
Comment
•
•
•
Updated E
AS (L =1
m
H)
= 1098mJ on page 2
11/19/2014
Ω
Updated note 9
“Limited by T
J
m
a
x
, starting T
= 25°C, L = 1mH, R
G
= 50
, I
AS
= 47A, V
GS
=10V”. on
page 2
J
Updated package outline
on page 9 and 10.
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
November 19, 2014
12
