Infineon-Technologies-IRFS7437TRLPBF
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Strong
IR
FET
IRFS7437PbF
IRFSL7437PbF
Applications
l
Brushed Motor drive applications
l
BLDC Motor drive applications
l
Battery powered circuits
l
Half-bridge and full-bridge topologies
l
Synchronous rectifier applications
l
Resonant mode power supplies
l
OR-ing and redundant power switches
l
DC/DC and AC/DC converters
l
DC/AC Inverters
HEXFET
®
Power MOSFET
V
DSS
40V
D
R
DS(on)
typ.
max.
1.4m
Ω
1.8m
Ω
G
I
D
250A
(Silicon Limited)
I
D
195A
(Package Limited)
S
D
D
Benefits
l
Improved Gate,
Avalanche and Dynamic
dV/dt
Ruggedness
S
S
D
l
Fully Characterized Capacitance and Avalanche
G
G
SOA
D
2
Pak
TO-262
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
IRFSL7437PbF
IRFS7437PbF
l
Halogen-Free
G
D
S
Gate
Drain
Source
Standard Pack
Form
Tube
Tube
Base Part Number
Package Type
Orderable Part Number
Quantity
50
50
800
IRFSL7437PbF
IRFS7437PbF
IRFS7437PbF
TO-262
D2Pak
D2Pak
IRFSL7437PbF
IRFS7437PbF
IRFS7437TRLPbF
Tape and Reel Left
6
5
4
3
2
1
0
250
200
150
100
50
LIMITED BY PACKAGE
I
= 100A
D
T
= 125°C
= 25°C
J
T
J
0
4.0
6.0
8.0 10.0
12.0 14.0 16.0 18.0 20.0
, Gate-to-Source Voltage (V)
25
50
75
100
125
150
175
V
T
, Case Temperature (°C)
GS
C
Fig 2.
Maximum Drain Current vs. Case Temperature
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
January 6, 2015
IRFS7437PbF/IRFSL7437PbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
250
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
180
195
A
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
1000
230
Maximum Power Dissipation
Linear Derating Factor
P
D
@T
C
= 25°C
W
W/°C
V
1.5
± 20
Gate-to-Source Voltage
V
GS
dv/dt
T
J
3.0
Peak Diode Recovery
V/ns
-55 to
+ 175
Operating Junction and
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
T
S
T
G
300
10lbf in
(1.1N m)
Avalanche Characteristics
Single Pulse Avalanche Energy
E
AS
(
Thermally limited)
E
AS
(
Thermally limited)
I
AR
350
802
mJ
Single Pulse Avalanche Energy
Avalanche Current
See Fig. 14, 15, 22a, 22b
A
Repetitive Avalanche Energy
E
AR
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
Junction-to-Case
Junction-to-Ambient (PCB Mount) , D
2
Pak
0.65
R
θ
JC
R
θ
JA
–––
–––
°C/W
40
Static @ T
J
= 25°C (unless otherwise specified)
Conditions
Symbol
V
(BR)DSS
Parameter
Min.
40
Typ.
–––
0.029
1.4
Max.
–––
–––
1.8
Units
V
V
GS
= 0V, I
D
= 250
μ
A
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 100A
Δ
V
(BR)DSS
/
Δ
T
J
–––
–––
–––
2.2
V/°C
R
DS(on)
m
Ω
V
V
V
GS
= 6.0V, I
D
= 50A
DS
= V
GS
, I
D
= 150
μ
A
DS
= 40V, V
GS
= 0V
2.0
–––
3.9
V
GS(th)
I
DSS
Gate Threshold Voltage
3.0
V
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.2
1.0
μ
A
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
150
100
-100
–––
V
GS
= 20V
GS
= -20V
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA
V
R
G
Ω
Notes:
ꢀ
Pulse width
≤
400
μ
s; duty cycle
≤
2%.
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
som
e
l
ea
d
m
ountin
g
a
rrangements
.
(Refe
r
t
o
A
N-1140)
Repetitive rating;
pulse width limited by max. junction
temperature.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
R
θ
is measured at T
J
approximately 90°C.
.
.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.069mH
R
G
= 50
Ω
, I
AS
= 100A, V
GS
=10V.
Limited by T
Jmax
starting T
J
= 25°C, L= 1mH, R
G
= 50
Ω
, I
AS
= 40A, V
GS
=10V.
I
SD
≤
100A, di/dt
≤
1166A/
μ
s, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
2
January 6, 2015
IRFS7437PbF/IRFSL7437PbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Min. Typ. Max.
Units
Conditions
V
DS
= 10V, I
D
= 100A
nC I
D
= 100A
DS
=20V
V
GS
= 10V
I
D
= 100A, V
DS
=20V, V
GS
= 10V
ns V
DD
= 20V
160 ––– –––
S
Q
g
Total Gate Charge
––– 150 225
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Total Gate Charge Sync. (Q
g
– Q
gd
)
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
41
51
99
19
70
78
53
–––
–––
–––
–––
–––
–––
–––
V
I
D
= 30A
R
G
= 2.7
Ω
V
GS
= 10V
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Input Capacitance
––– 7330 –––
––– 1095 –––
––– 745 –––
––– 1310 –––
––– 1735 –––
pF V
GS
= 0V
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25V
ƒ = 1.0 MHz,
See Fig. 5
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
V
V
GS
= 0V, V
DS
= 0V to 32V , See Fig. 11
GS
= 0V, V
DS
= 0V to 32V
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Min. Typ. Max.
Units
Conditions
D
S
I
S
Continuous Source Current
––– –––
250
A
A
V
MOSFET symbol
(Body Diode)
Pulsed Source Current
showing the
integral reverse
G
I
SM
––– –––
1000
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
p-n junction diode.
T
J
= 25°C, I
S
= 100A, V
GS
= 0V
V
SD
t
rr
–––
–––
–––
–––
–––
–––
1.0
30
30
24
25
1.3
1.3
–––
–––
–––
–––
–––
ns T
J
= 25°C
T
J
= 125°C
V
R
= 34V,
I
F
= 100A
di/dt = 100A/
μ
s
Q
rr
Reverse Recovery Charge
nC T
J
= 25°C
T
J
= 125°C
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
A
T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
3
January 6, 2015
IRFS7437PbF/IRFSL7437PbF
1000
100
10
1000
VGS
15V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM
BOTTOM
100
4.5V
4.5V
≤
60
μ
s PULSE WIDTH
60
μ
s PULSE WIDTH
≤
Tj = 25°C
Tj = 175°C
10
, Drain-to-Source Voltage (V)
1
10
0.1
1
10
100
0.1
1
100
V
, Drain-to-Source Voltage (V)
DS
V
DS
Fig 3.
Typical Output Characteristics
Fig 4.
Typical Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1000
100
10
I
= 100A
= 10V
D
V
GS
T
= 175°C
J
T
= 25°C
J
V
= 10V
DS
≤
60
μ
s PULSE WIDTH
1.0
-60 -40 -20
0 20
40 60 80
100120140160180
, Junction Temperature (°C)
3
4
5
6
7
8
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6.
Normalized On-Resistance vs. Temperature
Fig 5.
Typical Transfer Characteristics
14
100000
10000
1000
V
C
= 0V,
f = 1 MHZ
GS
I =
100A
D
V
V
= 32V
= 20V
= C
+ C
, C
SHORTED
DS
DS
iss
gs
gd ds
12
10
8
C
= C
rss
gd
C
= C
+ C
oss
ds
gd
C
iss
6
C
oss
C
rss
4
2
0
100
0
40
Q
80
120
160
200
1
10
, Drain-to-Source Voltage (V)
100
Total Gate Charge (nC)
G
V
DS
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
4
January 6, 2015
IRFS7437PbF/IRFSL7437PbF
1000
100
10
1000
100
μ
sec
T
= 175°C
J
100
10
1
1msec
Limited by Package
T
= 25°C
J
10msec
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1
10
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-toSource Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 10.
Maximum Safe Operating Area
Fig 9.
Typical Source-Drain Diode
Forward Voltage
1.2
50
48
46
44
42
40
Id = 1.0mA
1.0
0.8
0.6
0.4
0.2
0.0
0
10
20
30
40
50
-60 -40 -20
0 20
40 60 80
100120140160180
, Temperature ( °C )
V
Drain-to-Source Voltage (V)
DS,
T
J
Fig 11.
Drain-to-Source Breakdown Voltage
Fig 12.
Typical C
OSS
Stored Energy
8
7
6
V
= 5.5V
= 6.0V
GS
V
GS
5
V
= 7.0V
GS
VGS = 8.0V
VGS = 10V
4
3
2
1
0
100
200
300
400
500
I
, Drain Current (A)
D
Fig 13.
Typical On-Resistance vs. Drain Current
5
January 6, 2015
IRFS7437PbF/IRFSL7437PbF
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Δ
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
ΔΤ
Tstart = 150°C. (Single Pulse)
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15.
Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
Δ
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche =
t
av
·f
350
300
250
200
150
100
50
TOP
BOTTOM 1%
Duty Cycle
= 100A
Single Pulse
I
D
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
0
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
D
T/ Z
thJC
I
av
= 2
D
T/ [1.3·BV·Z
th
]
25
50
75
100
125
150
175
E
AS (AR)
= P
D (ave)
·t
av
Starting T
, Junction Temperature (°C)
J
Fig 16.
Maximum Avalanche Energy vs. Temperature
6
January 6, 2015
IRFS7437PbF/IRFSL7437PbF
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10
I
= 60A
= 34V
F
V
R
8
6
4
2
0
T =
25°C
J
T =
125°C
J
I
I
I
= 150
μ
A
= 1.0mA
= 1.0A
D
D
D
-75 -50 -25
0
25 50 75
100 125 150 175
0
200
400
600
800
1000
T ,
Temperature ( °C )
di /dt
(A/
μ
s)
J
F
Fig. 18
– Typical Recovery Current vs. di
f
/dt
Fig 17.
Threshold Voltage vs. Temperature
140
120
100
80
10
I
= 60A
= 34V
I
= 100A
= 34V
F
F
V
V
R
R
8
T =
25°C
T =
25°C
J
J
T =
125°C
J
T =
125°C
J
6
60
4
40
2
20
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt
(A/
μ
s)
di /dt
(A/
μ
s)
F
F
Fig. 19
– Typical Recovery Current vs. di
f
/dt
Fig. 20
– Typical Stored Charge vs. di
f
/dt
140
I
= 100A
F
120
100
80
60
40
20
0
V
= 34V
R
T =
25°C
J
T =
125°C
J
0
200
400
600
800
1000
di /dt
(A/
μ
s)
F
Fig. 21
– Typical Stored Charge vs. di
f
/dt
7
January 6, 2015
IRFS7437PbF/IRFSL7437PbF
Driver Gate Drive
P
.
W.
D.U.T
Period
D =
Period
P.W.
+
–
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/dt controlled by R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Current
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 22.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
V
G
S
Ω
0.01
t
p
I
AS
Fig 23b.
Unclamped Inductive Waveforms
Fig 23a.
Unclamped Inductive Test Circuit
R
D
V
DS
V
DS
90%
V
GS
D.U.T.
R
G
+
V
DD
–
V
GS
10%
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 24a.
Switching Time Test Circuit
Fig 24b.
Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.
T
.
Vds
Vgs
50K
Ω
.2
μ
F
12V
.3
μ
F
+
V
DS
D.U.
T
.
–
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 25a.
Gate Charge Test Circuit
Fig 25b.
Gate Charge Waveform
8
January 6, 2015
IRFS7437PbF/IRFSL7437PbF
D
2
Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D
2
Pak (TO-263AB) Part Marking Information
INTERNATIONAL
RECTIFIER LOGO
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
PART NUMBER
IRFS7437
IRFS7437
OR
PYWW?
YWWP
ASSEMBLY
LOT CODE
ASSEMBLY
LOT CODE
DATE CODE
DATE CODE
P = LEAD-FREE
LC
LC
LC
LC
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
9
January 6, 2015
IRFS7437PbF/IRFSL7437PbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
PART NUMBER
PART NUMBER
INTERNATIONAL
RECTIFIER LOGO
INTERNATIONAL
RECTIFIER LOGO
IRFSL7437
IRFSL7437
OR
PYWW?
YWWP
ASSEMBLY
LOT CODE
ASSEMBLY
LOT CODE
DATE CODE
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
LC LC
LC LC
? = ASSEMBLY SITE CODE
10
January 6, 2015
IRFS7437PbF/IRFSL7437PbF
D
2
Pa
k
T
a
pe & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
26.40 (1.039)
24.40 (.961)
4
3
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
11
January 6, 2015
IRFS7437PbF/IRFSL7437PbF
Qualification information
†
Industrial
††
(per JEDEC JESD47F
†††
guidelines)
Qualification le
v
e
l
D2Pak
M
S
L
1
(
p
er
J
E
D
E
C
J-ST
D
-020D
†††
Moisture Sensitivity Level
RoHS
c
o
m
pliant
)
TO-262
Yes
Qualification standards can be found at International Rectifiers web site:
http://www.irf.com/product-info/reliability/
Higher
qualification ratings may be available should the user have such requirements. Please contact your
Applicable
version of JEDEC standard at the time of product release.
Revision History
Date
Comment
•
•
•
•
Updated data sheet based on corporate template.
4/30/2014
Updated typo on the fig.19 and fig.21, unit of y-axis from “A” to “nC” on page7.
Updated package outline and part marking on page 9 & 10.
Updated E
AS (L =1
m
H)
= 802mJ on page 2
1/6/2015
•
Ω
Updated note 9
“Limited by T
J
m
a
x
, starting T
= 25°C, L = 1mH, R
G
= 50
, I
AS
= 40A, V
GS
=10V”. on
page 2
J
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
12
January 6, 2015
