Infineon-Technologies-IRFS7734TRL7PP
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Strong
IR
FET™
IRFS7734-7PPbF
HEXFET
®
Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
V
DSS
R
DS(on)
typ.
max
75V
2.6m
3.05m
197A
I
D
Benefits
Improved Gate,
Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
D
S
Gate
Drain
Source
Base Part Number
Package Type
Standard Pack
Complete Part Number
Form
Tube
Quantity
50
IRFS7734-7PPbF
IRFS7734TRL7PP
IRFS7734-7PPbF
D2Pak-7PIN
Tape and Reel Left
800
200
150
100
50
12
10
8
I
= 100A
D
6
T =
125°C
J
4
T =
25°C
J
2
0
4
0
8
12
16
20
25
50
75
100
125
150
175
V
, Gate-to-Source Voltage (V)
GS
T
, CaseTemperature (°C)
C
Fig 2.
Maximum Drain Current vs. Case Temperature
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
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© 2015 International Rectifier
April 7, 2015
IRFS7734-7PPbF
Absolute Maximium Rating
Symbol
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
197
139
600
294
2.0
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
P
D
@T
C
= 25°C
W
W/°C
V
V
GS
Gate-to-Source Voltage
± 20
T
J
T
STG
Operating Junction and
Storage Temperature Range
-55 to
+ 175
300
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
E
AS (Thermally limited)
350
670
Single Pulse Avalanche Energy
mJ
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
I
AR
E
AR
A
mJ
See Fig 14, 15, 23a, 23b
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
Junction-to-Case
–––
0.51
R
JC
R
JA
°C/W
Junction-to-Ambient
–––
40
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ.
Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
75
––– –––
53 –––
2.6 3.05
V
V
GS
= 0V, I
D
= 250µA
–––
–––
–––
mV/°C Reference
to 25°C, I
D
= 1mA
V
(BR)DSS
/
T
J
R
DS(on)
V
GS
= 10V, I
D
= 100A
V
GS
= 6.0V, I
D
= 50A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 75 V, V
GS
= 0V
m
m
V
3.1
–––
3.7
1.0
V
GS(th)
I
DSS
Gate Threshold Voltage
2.1 –––
––– –––
Drain-to-Source Leakage Current
µA
––– ––– 150
––– ––– 100
––– –––
-100
V
DS
= 75V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
GS
= -20V
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
nA
V
R
G
–––
2.0
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.07mH, R
G
= 50
, I
AS
= 100A, V
GS
=10V.
I
SD
100A, di/dt
1314A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C..
When mounted on 1″ square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50
, I
AS
= 37A, V
GS
=10V.
2
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© 2015 International Rectifier
April 7, 2015
IRFS7734-7PPbF
Dynamic Electrical
Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max.
Units
Conditions
V
DS
= 10V, I
D
=100A
I
D
= 100A
182 ––– –––
––– 180 270
S
Q
g
Q
gs
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
–––
–––
45
54
–––
–––
V
DS
= 38V
nC
Q
gd
V
GS
= 10V
Q
sync
t
d(on)
t
r
––– 126 –––
–––
–––
17
85
–––
–––
V
DD
= 38V
I
D
= 100A
Rise Time
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
––– 123 –––
––– 75 –––
R
G
= 2.7
V
GS
= 10V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 10130 –––
––– 820 –––
––– 506 –––
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
pF
C
oss eff.(ER)
Effective Output Capacitance (Energy Related)
––– 715 –––
V
GS
= 0V, V
DS
= 0V to 60V
V
GS
= 0V, V
DS
= 0V to 60V
C
oss eff.(TR)
Output Capacitance (Time Related)
––– 935 –––
Diode Characteristics
Symbol
I
S
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max.
Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
––– ––– 197
A
––– ––– 600
G
I
SM
S
V
SD
Diode Forward Voltage
––– –––
1.2
V
T
J
= 25°C,I
S
= 100A,V
GS
= 0V
dv/dt
Peak Diode Recovery dv/dt
–––
–––
–––
–––
–––
–––
4.8
46
51
73
95
2.7
––– V/ns
T
J
= 175°C,I
S
=100A,V
DS
= 75V
–––
–––
–––
–––
–––
T
J
= 25°C
V
DD
= 64V
I
F
= 100A,
t
rr
Reverse Recovery Time
ns
T
J
= 125°C
T
J
= 25°C
di/dt = 100A/µs
Q
rr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
T
J
= 125°C
I
RRM
T
J
= 25°C
3
www.irf.com
© 2015 International Rectifier
April 7, 2015
IRFS7734-7PPbF
1000
100
10
1000
100
10
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
TOP
TOP
BOTTOM
BOTTOM
4.0V
4.0V
60µs PULSE WIDTH
1
60µs PULSE WIDTH
Tj = 25°C
Tj = 175°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 4.
Typical Output Characteristics
Fig 3.
Typical Output Characteristics
1000
2.5
2.0
1.5
1.0
0.5
V
= 25V
I
= 100A
= 10V
DS
D
60µs PULSE WIDTH
V
GS
100
10
1
T =
175°C
J
T =
25°C
J
0.1
2.0
3.0
4.0
5.0
6.0
-60 -40 -20
0
20 40 60 80
100 120 140 160 180
V
, Gate-to-Source Voltage (V)
GS
T ,
Junction Temperature (°C)
J
Fig 6.
Normalized On-Resistance vs. Temperature
Fig 5.
Typical Transfer Characteristics
100000
14
V
= 0V,
f = 1 MHZ
GS
I =
100A
D
V
V
V
= 60V
= 38V
15V
C
C
C
= C
+ C
, C
SHORTED
DS
DS
iss
gs
gd
ds
gd
ds
12
10
8
= C
= C
rss
oss
+ C
gd
DS=
Ciss
10000
1000
100
6
Coss
Crss
4
2
0
0
50
Q
100
150
200
250
1
10
, Drain-to-Source Voltage (V)
100
Total Gate Charge (nC)
G
V
DS
Fig 8.
Typical Gate Charge vs.
Fig 7.
Typical Capacitance vs.
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© 2015 International Rectifier
Gate-to-Source Voltage
4
April 7, 2015
IRFS7734-7PPbF
1000
100
10
1000
100
10
100µsec
1msec
10msec
T =
175°C
J
T =
25°C
J
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
DC
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
1.2
GS
0.1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.4
0.1
1
10
100
V
, Drain-toSource
Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 10.
Maximum Safe Operating Area
Fig 9.
Typical Source-Drain Diode Forward Voltage
2.0
100
Id = 1.0mA
1.5
1.0
0.5
0.0
90
80
70
0
20
40
60
80
-60 -40 -20
0 20
40 60 80
100120140160180
V
Drain-to-Source Voltage (V)
DS,
T ,
Temperature ( °C )
J
Fig 12.
Typical C
oss
Stored Energy
Fig 11.
Drain-to-Source Breakdown Voltage
4.5
V
V
V
V
V
= 5.5V
= 6.0V
= 7.0V
= 8.0V
= 10V
GS
GS
GS
GS
GS
4.0
3.5
3.0
2.5
0
50
100
150
200
I ,
Drain Current (A)
D
Fig 13.
Typical On-Resistance vs. Drain Current
5
April 7, 2015
IRFS7734-7PPbF
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
1
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C. (Single Pulse)
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
1400
1200
1000
800
600
400
200
0
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
I
D
TOP
BOTTOM
18A
35A
100A
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T = Allowable rise in junction temperature, not to exceed T
jmax
(assumed as 25°C in Figure 14, 15).
t
av
= Average time in avalanche.
D = Duty cycle in avalanche =
tav ·f
25
50
75
100
125
150
175
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·I
av
) =
T/ Z
thJC
I
av
= 2
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)· av
t
Fig 16.
Maximum Avalanche Energy vs. Temperature
6
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© 2015 International Rectifier
April 7, 2015
IRFS7734-7PPbF
20
15
10
5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
= 60A
= 64V
F
V
R
T =
25°C
J
T =
125°C
J
I
I
I
= 250µA
= 1.0mA
= 1.0A
D
D
D
0
-75 -50 -25
0
25 50 75
100 125 150 175
, Temperature ( °C )
0
200
400
600
800
1000
T
di /dt
(A/µs)
J
F
Fig 17.
Threshold Voltage vs. Temperature
Fig 18.
Typical Recovery Current vs. dif/dt
20
500
400
300
200
100
0
I
= 60A
= 64V
I
= 100A
= 64V
F
F
V
V
R
R
T =
25°C
T =
25°C
J
J
15
10
5
T =
125°C
J
T =
125°C
J
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt
(A/µs)
di /dt
(A/µs)
F
F
Fig 20.
Typical Stored Charge vs. dif/dt
Fig 19.
Typical Recovery Current vs. dif/dt
500
I
= 100A
= 64V
F
V
R
400
300
200
100
0
T =
25°C
J
T =
125°C
J
0
200
400
600
800
1000
di /dt
(A/µs)
F
Fig 21.
Typical Stored Charge vs. dif/dt
7
April 7, 2015
IRFS7734-7PPbF
Fig 22.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
–
I
A
AS
20V
I
0.01
t
p
AS
Fig 23a.
Unclamped Inductive Test Circuit
Fig 23b.
Unclamped Inductive Waveforms
Fig 24a.
Switching Time Test Circuit
Fig 24b.
Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b.
Gate Charge Waveform
Fig 25a.
Gate Charge Test Circuit
8
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© 2015 International Rectifier
April 7, 2015
IRFS7734-7PPbF
D
2
Pak-7Pin Package
Outline
(Dimensions are shown in millimeters (inches))
9
www.irf.com
© 2015 International Rectifier
April 7, 2015
IRFS7734-7PPbF
D
2
Pak-7Pin Part
Marking Information
D2Pak-7Pin Tape and Reel
10
www.irf.com
© 2015 International Rectifier
April 7, 2015
IRFS7734-7PPbF
Qualification Information
†
Qualification Level
Industrial
(per JEDEC JESD47F)
††
MSL1
D
2
Pak-7Pin
(per JEDEC J-STD-020D
††
)
Moisture Sensitivity Level
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com/product-info/reliability/
Revision History
Date
Comment
Updated E
AS (L =1mH)
= 670mJ
on page 2
03/05/2015
04/07/2015
Updated note 9
“Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50
, I
AS
= 37A, V
GS
=10V” on page 2
Updated package outline on page 9 .
Updated typo on Crss from “75pF” to “506pF” on page 3 .
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
11
www.irf.com
© 2015 International Rectifier
April 7, 2015
