Infineon-Technologies-IRFZ24NPBF
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PD – 94990
IRFZ24NPbF
HEXFET
®
Power MOSFET
l
Advanced Process Technology
l
Dynamic dv/dt Rating
D
V
DSS
= 55V
R
DS(on)
= 0ꢀ07
Ω
I
D
= 17A
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
G
l
Lead-Free
Description
S
®
Fifth Generation
HEXFET power
MOSFETs
from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon area.
This benefit, combined with the fast
switchin
g
s
pee
d
a
n
d
r
uggedize
d
d
evic
e
d
esig
n
t
ha
t
H
EXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
level
s
t
o
a
pproximatel
y
5
0
w
atts. Th
e
l
o
w
t
herma
l
r
esistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Maxꢀ
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
17
12
A
68
P
D
@T
C
= 25°C
Power Dissipation
45
W
W/°C
V
Linear Derating Factor
0ꢀ30
±20
71
V
GS
E
AS
I
AR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
10
E
AR
dv/dt
T
J
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
4ꢀ5mJ
5ꢀ0
V/ns
°C
-55 to
+ 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screwꢀ
300 (1ꢀ6mm from case)
10 lbfin (1ꢀ1Nm)
Thermal Resistance
Parameter
Junction-to-Case
Minꢀ
Typꢀ
0ꢀ50
Maxꢀ
Units
R
θ
JC
R
θ
CS
R
θ
JA
3ꢀ3
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
1
2/10/04
IRFZ24NPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Minꢀ Typꢀ Maxꢀ Units
55
Conditions
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Tempꢀ Coefficient
0ꢀ052
V/°C
Reference to 25°C, I
D
= 1mA
R
DS(on)
V
GS(th)
g
fs
Static Drain-to-Source On-Resistance
0ꢀ07
Ω
V
S
V
GS
= 10V, I
D
= 10A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 10A
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
Gate Threshold Voltage
2ꢀ0
4ꢀ0
Forward
Transconductance
4ꢀ5
25V
250
100
-100
20
5ꢀ3
7ꢀ6
I
DSS
I
GSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
GS
= -20V
Q
g
I
D
= 10A
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
nC
ns
V
DS
= 44V
V
GS
= 10V, See Figꢀ 6 and 13
V
DD
= 28V
4ꢀ9
34
19
27
I
D
= 10A
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 24
Ω
R
D
= 2ꢀ6
Ω,
See Figꢀ 10
Between lead,
D
S
L
D
Internal Drain Inductance
4ꢀ5
6mm (0ꢀ25inꢀ)
nH
pF
G
from package
L
S
Internal Source Inductance
7ꢀ5
and center of die contact
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
370
140
V
DS
= 25V
Reverse
Transfer
Capacitance
65
=
1ꢀ0MHz,
See
Figꢀ
5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Minꢀ Typꢀ Maxꢀ Units
Conditions
D
I
S
MOSFET symbol
showing the
17
68
A
G
I
S
M
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diodeꢀ
S
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
1ꢀ3
56
83
120 180
V
T
J
= 25°C, I
S
= 10A, V
GS
= 0V
ns
T
J
= 25°C, I
F
= 10A
Q
rr
nC di/dt
= 100A/µs
Notes:
Repetitive rating;
pulse width limited by
I
SD
≤
10A, di/dt
≤
280A/µs, V
DD
≤
V
(BR)DSS
,
maxꢀ junction temperatureꢀ ( See figꢀ 11 )
T
J
≤
175°C
V
DD
= 25V, starting T
J
= 25°C, L = 1ꢀ0mH
R
G
= 25
Ω
, I
AS
= 10Aꢀ (See Figure 12)
Pulse width
≤
300µs; duty cycle
≤
2%ꢀ
2
IRFZ24NPbF
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
C
= 25°C
T
C
= 175°C
A
A
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2ꢀ
Typical Output Characteristics,
Fig 1ꢀ
Typical Output Characteristics,
T
J
= 175
o
C
T
J
= 25
o
C
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
I
= 17A
D
T =
25°C
J
T
J
= 175°C
V
D
S
= 25V
20µs PULSE WIDTH
V
= 10V
GS
A
1
0
A
-60 -40 -20
0
20 40 60 80
100 120 140 160 180
4
5
6
7
8
9
T ,
Junction Temperature (°C)
V
GS
, Gate-to-Source Voltage (V)
J
Fig 4ꢀ
Normalized On-Resistance
Fig 3ꢀ
Typical Transfer Characteristics
Vsꢀ Temperature
3
IRFZ24NPbF
20
16
12
8
700
I
= 10A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C
+ C
,
C
SHORTED
V
V
= 44V
= 28V
gs
gd
ds
DS
DS
= C
gd
600
500
400
300
200
100
0
= C
+ C
ds
gd
C
C
iss
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
4
8
12
16
20
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6ꢀ
Typical Gate Charge Vsꢀ
Fig 5ꢀ
Typical Capacitance Vsꢀ
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T =
175°C
J
T =
25°C
J
10µs
100µs
1ms
T
T
= 25°C
C
J
= 175°C
Single Pulse
10ms
V
GS
= 0V
A
1
A
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8ꢀ
Maximum Safe Operating Area
Fig 7ꢀ
Typical Source-Drain Diode
Forward Voltage
4
IRFZ24NPbF
R
D
V
DS
20
16
12
8
V
GS
10V
DꢀUꢀTꢀ
R
G
+
V
DD
–
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10aꢀ
Switching Time Test Circuit
V
DS
90%
4
A
175
0
25
50
75
100
125
150
10%
T ,
Case Temperature (°C)
C
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9ꢀ
Maximum Drain Current Vsꢀ
Fig 10bꢀ
Switching Time Waveforms
Case Temperature
10
D = 0.50
0.20
1
0.10
0.05
P
0.02
0.01
DM
0.1
t
S
I
NGLE PULSE
1
t
(THERMAL RESPONSE)
2
Notes:
1. Duty factor D =
t /
t
1
2
2. Peak T
= P
x Z
+ T
thJC
C
DM
J
A
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11ꢀ
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRFZ24NPbF
L
V
140
120
100
80
DS
I
D
TOP
4.2A
7.2A
D.U.
T
.
R
G
BOTTOM 10A
+
–
V
DD
I
10 V
AS
t
p
0.01
Ω
60
Fig 12aꢀ
Unclamped Inductive Test Circuit
40
V
(BR)DSS
t
p
20
V
DD
V
= 25V
50
DD
0
A
175
25
75
100
125
150
V
Starting T
, Junction Temperature (°C)
DS
J
Fig 12cꢀ
Maximum Avalanche Energy
I
AS
Vsꢀ Drain Current
Fig 12bꢀ
Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.
T
.
50K
Ω
.2
µ
F
12V
Q
Q
G
.3
µ
F
10 V
+
V
DS
Q
D.U.
T
.
–
GS
GD
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13bꢀ
Gate Charge Test Circuit
Fig 13aꢀ
Basic Gate Charge Waveform
6
IRFZ24NPbF
Peak Diode Recovery dv/dt Test Circuit
+
–
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
DꢀUꢀT
+
–
–
+
R
G
•
dv/dt controlled by R
G
+
–
•
Driver same type as DꢀUꢀTꢀ
•
I
SD
controlled by Duty Factor “D”
•
DꢀUꢀTꢀ – Device Under Test
V
DD
Driver Gate Drive
P.W.
P
.
W.
Period
Period
D =
V
=10V
*
GS
D.U.
T
. I
W
aveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 14ꢀ
For N-Channel HEXFET
®
power MOSFETs
7
IRFZ24NPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
– B –
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
– A –
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAM
P
LE:
THIS IS
A
N
I
RF1010
L
O
T CO
D
E 1789
P
A
R
T NU
M
B
ER
AS S
E
M
B
LED
O
N WW 19, 1997
IN T
H
E
A
S
S E M
B
LY LINE
“
C”
IN
T
ERN
A
T
I
ONAL
RE
C
T
I
F
I
E
R
L
O
GO
Note:
“P” in assembly line
position indicates “Lead-Free”
D
A
T
E
C
O
D
E
Y
E
A
R 7 =
1
997
W
E
EK
1
9
AS
S
E
M
B
LY
L
O
T CODE
L
I
NE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
8
Note: For
the most current drawings please refer to the IR website at:
