Infineon-Technologies-IRG4BC40U

PD – 91456E  

IRG4BC40U  

UltraFast Speed IGBT  

INSULATED GATE BIPOLAR TRANSISTOR  

C

Features  

• UltraFast: optimized for high operating  

frequencies 8-40 kHz in hard switching, >200  

kHz in resonant mode  

V

CES

=

6

00V  

• Generation 4 IGBT design provides tighter  

parameter distribution and higher efficiency than  

Generation 3  

V

CE(on) typ.

=

1.72V  

G

@V

GE

= 15V, I

C

= 20A  

E

• Industry standard TO-220AB package  

n-channel  

Benefits  

• Generation 4 IGBTs offer highest efficiency available  

• IGBTs optimized for specified application conditions  

• Designed to be a “drop-in” replacement for equivalent  

industry-standard Generation 3 IR IGBTs  

TO-220AB  

Absolute Maximum Ratings  

Parameter  

Max.  

Units  

V

CES  

Collector-to-Emitter Voltage  

Continuous Collector Current  

Continuous Collector Current  

Pulsed Collector Current



 

Clamped Inductive Load Current

‚  

Gate-to-Emitter Voltage  

600  

V

I

C

@ T

C

= 25

°

C  

40  

I

C

@ T

C

= 100

°

C  

20  

A

I

CM  

160  

I

LM  

160  

V

GE  

20  

V

E

ARV  

Reverse Voltage Avalanche Energy

ƒ  

Maximum Power Dissipation  

15  

160  

mJ  

P

D

@ T

C

= 25

°

C  

W

P

D

@ T

C

= 100

°

C Maximum

 

Power Dissipation  

65  

T

J  

Operating Junction and  

-55 to

 

+150  

T

STG  

Storage Temperature Range  

Soldering Temperature, for 10 sec.  

Mounting torque, 6-32 or M3 screw.  

°

C  

300 (0.063 in. (1.6mm) from case)  

10 lbf

•

in (1.1N

•

m)  

Thermal Resistance  

Parameter  

Junction-to-Case  

Case-to-Sink, flat, greased surface  

Junction-to-Ambient, typical socket mount  

Weight  

Min.  

——  

——  

——  

——  

Typ.  

——  

0.50  

Max.  

0.77  

——  

80  

Units  

°

C/W  

R

θ

JC  

R

θ

CS  

R

θ

JA  

Wt  

——  

2 (0.07)  

——  

g (oz)  

1

4/17/2000  

IRG4BC40U  

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)  

Parameter  

Collector-to-Emitter Breakdown Voltage

 

600 —- —-  

Emitter-to-Collector Breakdown Voltage

„

18 —-

 

—-  

Min. Typ. Max. Units  

Conditions  

V

GE

= 0V, I

C

= 250µA  

V

GE

= 0V, I

C

= 1.0A  

V

(BR)CES  

V

(BR)ECS  

V

V

See Fig. 2, 5  

V

GE

= 15V  

∆

V

(BR)CES

/

∆

T

J

Temperature Coeff. of Breakdown Voltage

 

–

— 0.63 —- V/

°

C V

GE

= 0V, I

C

= 1.0mA  

V

CE(on)  

Collector-to-Emitter Saturation Voltage  

—- 1.72 2.1  

—- 2.15 —-  

—- 1.7 —-  

3.0 —- 6.0  

I

C

= 20A  

V

I

C

= 40A  

I

C

= 20A, T

J

= 150

°

C  

V

CE

= V

GE

, I

C

= 250µA  

V

GE(th)  

Gate Threshold Voltage  

∆

V

GE(th)

/

∆

T

J

Temperature Coeff. of Threshold Voltage

 

—- -13 —-

 

mV/

°

C V

CE

= V

GE

, I

C

= 250µA  

g

fe  

Forward Transconductance

ꢀ  

Zero Gate Voltage Collector Current  

Gate-to-Emitter Leakage Current  

11  

18  

—-  

S

V

CE

= 100V, I

C

= 20A  

—- —- 250  

—- —- 2.0  

—- —-

 

2500  

V

GE

= 0V, V

CE

= 600V  

I

CES  

µA  

V

GE

= 0V, V

CE

= 10V, T

J

= 25

°

C  

V

GE

= 0V, V

CE

= 600V, T

J

= 150

°

C  

I

GES  

—- —-  

100

n

A  

V

GE

= 20V  

Switching Characteristics @ T

J

= 25°C (unless otherwise specified)  

Parameter  

Total Gate Charge (turn-on)  

Gate – Emitter Charge (turn-on)  

Gate – Collector Charge (turn-on)  

Turn-On Delay Time  

Ris

e

T

ime  

Min. Typ. Max. Units  

—- 100 150  

Conditions  

Q

g  

Q

ge  

Q

gc  

t

d(on)  

t

r  

I

C

= 20A  

—-  

—-  

—-  

—-  

16  

40  

34  

19  

25  

60  

nC  

ns  

V

CC

= 400V  

V

GE

= 15V  

T

J

= 25

°

C  

See Fig. 8  

—-  

—-  

I

C

= 20A, V

CC

= 480V  

t

d(off)  

t

f  

Turn-Off Delay Time  

Fal

l

T

ime  

—- 110 175  

—- 120 180  

—- 0.32 —-  

—- 0.35 —-  

—- 0.67 1.0  

V

GE

= 15V, R

G

= 10

Ω  

Energy losses include “tail”  

E

o

n  

E

off  

E

ts  

t

d(on)  

t

r  

Turn-On Switching Loss  

Turn-Off Switching Loss  

Total Switching Loss  

Turn-On Delay Time  

Ris

e

T

ime  

mJ  

ns  

See Fig. 10, 11, 13, 14  

—-  

—-  

30  

19  

—-  

—-  

T

J

= 150

°

C,  

I

C

= 20A, V

CC

= 480V  

V

GE

= 15V, R

G

= 10

Ω  

Energy losses include “tail”  

See Fig. 13, 14  

t

d(off)  

t

f  

Turn-Off Delay Time  

Fal

l

T

ime  

—- 220 —-  

—- 160 —-  

—- 1.4 —-  

—- 7.5 —-  

—- 2100 —-  

—- 140 —-  

E

ts  

Total Switching Loss  

Internal Emitter Inductance  

Input Capacitance  

mJ  

nH  

L

E  

Measured 5mm from package  

V

GE

= 0V  

C

ies  

C

oes  

C

res  

Output Capacitance  

Reverse Transfer Capacitance  

pF  

V

CC

= 30V  

See Fig. 7  

—-  

34  

—-  

ƒ

= 1.0MHz  

Notes:  



Repetitive rating; V

GE

= 20V, pulse width limited by  

„

Pulse width

≤

80µs; duty factor

≤

0.1%.  

max. junction temperature. ( See fig. 13b )  

ꢀ

Pulse width 5.0µs, single shot.  

‚

V

CC

= 80%(V

CES

), V

GE

= 20V, L = 10µH, R

G

= 10

Ω

,  

(see fig. 13a)  

ƒ

Repetitive rating; pulse width limited by maximum  

junction temperature.  

2

IRG4BC40U  

60  

50  

40  

30  

20  

10  

0

F

o

r

 

both :  

Trian gu

l

a

r

 

w a ve :  

D

u

ty

 

cyc

l

e

: 50%  

I

T

T

=

1

25

°

C  

J

=

90

°

C  

sink  

G

a

te

 

drive as spec

i

fied  

C lam p

 

voltage:  

80 %

 

o f

 

ra ted  

Po w er

 

D issip ation  

=

2

8

 

W  

Sq u a

r

e

 

wave:  

60 %

 

of rated  

voltag e  

I

Ideal d

i

o

des  

A

100  

0.1  

1

10  

f, Frequency (kHz)  

Fig. 1

– Typical Load Current vs. Frequency  

(For square wave, I=I

RMS

of fundamental; for triangular wave, I=I

PK  

)

1000  

1000  

100  

10  

100  

T

J

= 25

°

C  

T

J

= 1

 

5

0

°

C  

T

J

= 150

°

C  

T

J

= 2

 

5

°

C  

10  

V

C C

 

= 1

 

0 V  

5µ s

 

P U L S E

 

W

I

D

T

H  

V

G E

 

= 15V  

20µs PULSE WIDTH  

A

12  

1

A

1

4

6

8

10  

0.1  

1

10  

V

, G

 

a

te-to-Em itter

 

Vo ltag e

 

(V)  

G E  

V

, Collector-to-Emitter Voltage (V)  

CE  

Fig. 2

– Typical Output Characteristics  

T

C

= 25

°

C  

Fig. 3

– Typical Transfer Characteristics  

3

IRG4BC40U  

2.5  

2.0  

1.5  

1.0  

40  

30  

20  

10  

0

V

G E

 

= 15V  

80µs PULSE WIDTH  

V

G E

 

= 15V  

I

C

= 40A  

I

C

= 20A  

= 10A  

I

C

A

A

25  

50  

75  

100  

125  

150  

-60  

-40  

-20  

0

20  

40  

60  

80  

100 120 140 160  

T

, Case Temperature (

°

C)  

T

, Junction Temperature (

°

C)  

C

J

Fig. 4

– Maximum Collector Current vs.

 

Case  

Fig. 5

– Collector-to-Emitter

 

Voltage vs.  

Temperature  

Junctio

n

T

emperature  

1

D =

0

.

5

0  

0.20  

0.1  

0.10  

P

DM  

0

.

05  

t

1

SINGLE PULSE  

t

2

(THERMAL RESPONSE)  

0.02  

0.01  

N

o

tes:  

1 .

 

D

u

ty

 

factor D  

=

t

/ t  

2

1

2. Pea

 

k T

 

= P  

x Z  

+ T  

C

DM  

J

thJC  

1

0.01  

0.00001  

0.0001  

0.001  

0.01  

0.1  

10  

t

1

,

R

ectangular Pulse Duration (sec)  

Fig.

6

–

M

aximu

m

E

ffectiv

e

T

ransien

t

T

herma

l

I

mpedance

,

J

unction-to-Case  

4

IRG4BC40U  

20  

16  

12  

8

4000  

3000  

2000  

1000  

0

V

C E

 

= 4

 

0

0

V  

I

C

=

2

0

 

A  

V

C

C

C

=

0

V,  

f =

1

M

 

Hz  

G E  

ies  

r

e

s  

oes  

= C  

= C  

= C  

+ C  

+ C  

,

C

S

H

O RTED  

ge  

gc  

ce  

gc  

ce  

gc  

C

ies  

C

C

oes  

res  

4

A

0

A

0

20  

40  

60  

80  

100  

120  

1

10  

100  

Q

,

T

o

 

tal G

 

ate C

 

harge (n

 

C )  

g

V

,

C

ollector-to-Emitter Voltage (V)  

CE  

Fig. 7 –

Typical Capacitance vs.  

Fig. 8

– Typical Gate Charge vs.  

Collector-to-Emitte

r

V

oltage  

Gate-to-Emitte

r

V

oltage  

1.1  

1.0  

0.9  

0.8  

0.7  

0.6  

10  

V

C C

 

= 480V  

V

G E

 

= 15V  

R

G

= 10  

Ω

V

G E

 

= 15V  

V

C C

 

= 480V  

T

J  

= 25

°

C  

I

C

= 20A  

I

C

= 40A  

I

C

= 20A  

I

C

= 10A  

1

A

A

0.1  

0

10  

20  

30  

40  

50  

60  

-60  

-40  

-20  

0

20  

40  

60  

80  

100 120 140 160  

R

, Gate Resistance (  

)

Ω

T

, Junction Temperature (

°

C)  

G

J

Fig. 10

– Typical Switching Losses vs.  

Fig. 9

– Typical Switching Losses vs. Gate  

Junctio

n

T

emperature  

Resistance  

5

IRG4BC40U  

4.0  

1000  

100  

10  

R

G

= 10  

Ω

V

T

=

2

0V  

=

1

25

°

C  

G

G

E

E

T

J

= 150

°

C  

V

C C

 

= 480V  

V

G E

 

= 15V  

J

3.0  

2.0  

1.0  

0.0  

S

A

FE

 

O PERATING

 

A REA  

A

1

1

10  

100  

1000  

0

10  

20  

30  

40  

50  

V

,

C

ollector-to-Emitter Voltage (V)  

I

, Collector-to-Emitter Current (A)  

C E  

C

Fig. 11 –

Typical Switching Losses vs.  

Fig. 12

– Turn-Off SOA  

Collector-to-Emitter Current  

6

IRG4BC40U  

L

D.U.T.  

480V  

4

X

I

C

@

25

°

C  

R

L  

=

V

*

C

50V  

0 – 480V  

1000V  

480µF  

960V  



‚

*

D

r

i

ver same type as D.U.T.; Vc = 80% of Vce(max)  

*

N

ote: Due to the 50V pow

 

er supply, pulse width and inductor  

w ill

 

increase to obtain rated Id.  

Fig. 13b

–

Pulsed Collector  

Fig. 13a

–

Clamped Inductive  

Load Test Circuit  

Current Test Circuit  

I

C

L

Fig. 14a

–

Switching Loss  

D.U.T.  

D river*  

V

C

Test Circuit  

50V  

1000V  

* Driver same type  

as D.U.T., VC = 480V  



‚

ƒ



‚

90%  

10%  

ƒ

V

C

90%  

Fig. 14b

–

Switching Loss  

t

d(o ff)  

Waveforms  

10%  

5%  

I

C

t

f

t

r

t

d (o n)  

t=5µs  

E

E

o ff  

o n  

E

=

(

E  

+E  

)

off  

ts  

o n  

7

IRG4BC40U  

Case Outline and Dimensions — TO-220AB  

10.54 (.415)  

3.78 (.149)  

N O

T

E S :  

– B –  

2.87 (.113)  

2.62 (.103)  

10.29 (.405)  

1

D IM E N S IO N S

 

& T

 

O LE R A N C IN G  

4.69 (.185)  

4.20 (.165)  

3.54 (.139)  

P E R

 

A N S I

 

Y

1

4.5M ,

 

1982.  

C O N

T

R O LL

I

N G

 

D IM E N S IO N

 

: IN

 

C H .  

D IM E N S IO N S

 

A R E

 

S H O W N  

M ILLIM E TE R S

 

(IN C H ES ).  

C O N

F

O R M S

 

TO JE

 

D E C

 

O U TLIN E  

T O -220AB .  

1.32 (.052)  

1.22 (.048)  

– A –  

2

3

6.47 (.255)  

6.10 (.240)  

4

4

15.24 (.600)  

14.84 (.584)  

1.15 (.045)  

M

I

N  

LE A D

 

A S S IG N M E N T S  

1

2

3

1

2

3

4

– G

 

A

T

E  

– C

 

O

L

LE C TO R  

–

E

M

 

IT TE R  

– C

 

O

L

LE C TO R  

3.96 (.160)  

3.55 (.140)  

3 X  

14.09 (.555)  

13.47 (.530)  

4.06 (.160)  

3.55 (.140)  

0.93 (.037)  

0.69 (.027)  

0.55 (.022)  

0.46 (.018)  

3 X  

3 X  

1.40 (.055)  

1.15 (.045)  

3 X  

0.36 (.014)  

M B A M  

2.92 (.115)  

2.64 (.104)  

2.54 (.100)  

2X  

CONFORMS TO JEDEC OUTLINE TO-220AB  

D

i

m e ns io ns

 

in M

 

illim e ters

 

a nd

 

(In c he s)  

IR WORLD HEADQUARTERS:

233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  

IR EUROPEAN REGIONAL CENTRE:

439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000  

IR CANADA:

15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200  

IR GERMANY:

Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590  

IR ITALY:

Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111  

IR JAPAN:

K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086  

IR SOUTHEAST ASIA:

1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65

 

(0)838 4630  

IR TAIWAN:

16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673

 

Tel: 886-(0)2 2377 9936  

Data and specifications subject to change without notice. 4/00  

8

Note: For

 

the most current drawings please refer to the IR website at: