Infineon-Technologies-IRG4PC30UDPBF
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PD – 95327
IRG4PC30UDPbF
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
UltraFast:
Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
in resonant mode
V
CES
= 600V
kHz
V
CE(on) typ.
=
1.95V
@V
GE
= 15V, I
C
= 12A
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
IGBT co-packaged with HEXFRED
TM
ultrafast,
G
E
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
n-channel
Industry standard TO-247AC package
Lead-Free
Benefits
Generation -4 IGBT’s offer highest efficiencies
available
IGBT’s optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT’s .
Minimized recovery characteristics require
less/no snubbing
Designed to be a “drop-in” replacement for equivalent
industry-standard Generation 3 IR IGBT’s
TO-247
A
C
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
C
@ T
C
= 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
I
23
I
C
@ T
C
= 100°C
12
I
CM
92
A
I
LM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
92
I
F
@ T
C
= 100°C
12
92
I
FM
V
GE
± 20
V
P
D
@ T
C
= 25°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
100
W
P
D
@ T
C
= 100°C
42
T
J
-55 to
+150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Thermal Resistance
Parameter
Junction-to-Case – IGBT
Min.
——
——
——
—–
Typ.
——
——
0.24
Max.
1.2
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Wt
Junction-to-Case – Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
2.5
°C/W
——
40
—–
——
6 (0.21)
——
g (oz)
1
6/1/04
IRG4PC30UDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600 —-
—-
V
V
GE
= 0V, I
C
= 250µA
∆
V
(BR)CES
/
∆
T
J
Temperature Coeff. of Breakdown Voltage
—- 0.63 —-
V/°C V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
—- 1.95 2.1
—- 2.52 —-
—- 2.09 —-
3.0 —- 6.0
I
C
= 12A
V
GE
= 15V
V
I
C
= 23A
See Fig. 2, 5
I
C
= 12A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250µA
V
GE(th)
Gate Threshold Voltage
∆
V
GE(th)
/
∆
T
J
Temperature Coeff. of Threshold Voltage
—- -11 —-
mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance
3.1 8.6 —-
S
V
CE
= 100V, I
C
= 12A
I
CES
Zero Gate Voltage Collector Current
—- —-
250
µA
V
GE
= 0V, V
CE
= 600V
—- —-
2500
—- 1.4 1.7
—- 1.3 1.6
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
FM
I
GES
Diode Forward Voltage Drop
V
I
C
= 12A
See Fig. 13
I
C
= 12A, T
J
= 150°C
V
GE
= ±20V
Gate-to-Emitter Leakage Current
—- —-
±100 nA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Qge
Q
gc
t
d(on)
t
r
Total Gate Charge (turn-on)
Gate – Emitter Charge (turn-on)
Gate – Collector Charge (turn-on)
Turn-On Delay Time
Ris
e
T
ime
—- 50
—- 8.1
—- 18
—- 40
—- 21
75
12
I
C
= 12A
nC
ns
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
See Fig. 8
27
—-
—-
I
C
= 12A, V
CC
= 480V
t
d(off)
t
f
Turn-Off Delay Time
Fal
l
T
ime
—- 91 140
—- 80 130
—- 0.38 —-
—- 0.16 —-
—- 0.54 0.9
V
GE
= 15V, R
G
= 23
Ω
Energy losses include “tail” and
diode reverse recovery.
See Fig. 9, 10, 11, 18
E
o
n
E
off
E
t
s
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Ris
e
T
ime
mJ
ns
t
d(on)
t
r
t
d(off)
t
f
—- 40
—- 22
—-
—-
T
J
= 150°C,
See Fig. 9, 10, 11, 18
I
C
= 12A, V
CC
= 480V
Turn-Off Delay Time
Fal
l
T
ime
—- 120 —-
—- 180 —-
—- 0.89 —-
V
GE
= 15V, R
G
= 23
Ω
Energy losses include “tail” and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
E
t
s
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
L
E
—-
13
—-
C
ies
C
oes
C
res
t
rr
—- 1100 —-
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
—- 73
—- 14
—- 42
—-
—-
60
pF
ns
A
V
CC
= 30V
See Fig. 7
= 1.0MHz
T
J
= 25°C
See Fig.
—- 80 120
Diode Peak Reverse Recovery Current
—- 3.5 6.0
—- 5.6
10
T
J
= 125°C
T
J
= 25°C
See Fig.
T
J
= 125°C
15
T
J
= 25°C
See Fig.
T
J
= 125°C
16
14
I
F
= 12A
I
rr
V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
—- 80 180
—- 220 600
nC
di/dt 200A/µs
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
—- 180 —- A/µs
T
J
= 25°C
See Fig.
—- 120 —-
T
J
= 125°C
17
2
IRG4PC30UDPbF
20
16
12
8
Duty cycle: 50%
T
T
sink
= 125°C
= 90°C
J
Gate drive as specified
T
u
rn-on losses include
effects of reverse recovery
Power Dissipation = 24W
60% of rated
voltage
4
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1
– Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
10
1
J
T =
25°C
T
J
= 150°C
T
J
= 150°C
10
T
J
= 25°C
1
V
CC
= 10V
5µs PULSE WIDTH
V
GE
= 15V
20µs PULSE WIDTH
A
A
0.1
0.1
5
6
7
8
9
10
11
12
0.1
1
10
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 3
– Typical Transfer Characteristics
Fig. 2
– Typical Output Characteristics
3
IRG4PC30UDPbF
3.0
2.5
2.0
1.5
25
V
GE
= 15V
80µs PULSE WIDTH
V
GE
= 15V
I
C
= 24A
20
15
10
5
I
I
C
C
= 12A
= 6.0A
A
A
0
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80
100 120 140 160
T ,
Case Temperature (°C)
T ,
Junction Temperature (°C)
C
J
Fig. 5
– Typical Collector-to-Emitter
Voltage
Fig. 4
– Maximum Collector Current vs.
vs
.
J
unctio
n
T
emperature
Case Temperature
10
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
t
1
0.02
t
2
SINGLE PULSE
0.01
Notes:
(THERMAL RESPONSE)
1. Duty factor D =
t /
t
1
2
thJC
1
2. Peak T
= P
J
x Z
+ T
C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t ,
Rectangular Pulse Duration (sec)
1
Fig. 6
– Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
4
IRG4PC30UDPbF
2000
1600
1200
800
400
0
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
V
CE
= 400V
I
C
= 12A
GE
ies
res
oes
= C
+ C
,
C
SHORTED
ge
gc
ce
= C
gc
= C
+ C
ce
gc
C
C
ies
oes
C
res
4
A
A
0
1
10
100
0
10
20
30
40
50
V
, Collector-to-Emitter Voltage (V)
Q ,
Total Gate Charge (nC)
g
CE
Fig. 7 –
Typical Capacitance vs.
Fig. 8
– Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
10
0.60
R
G
= 23
V
GE
= 15V
V
CC
= 480V
Ω
V
CC
= 480V
V
GE
= 15V
T
J
= 25°C
I
C
= 12A
0.58
0.56
0.54
0.52
0.50
I
C
= 24A
I
C
= 12A
I
C
= 6.0A
1
A
A
0.1
-60 -40 -20
0
20
40 60 80
100 120 140 160
0
10
20
30
40
50
60
T ,
Junction Temperature (°C)
Ω
)
J
R ,
Gate Resistance (
G
Fig. 9
– Typical Switching Losses vs. Gate
Fig. 10
– Typical Switching Losses vs.
Resistance
Junction Temperature
5
IRG4PC30UDPbF
2.0
1000
100
10
R
G
= 23
Ω
V
= 20V
= 125°C
G
E
T
J
= 150°C
V
CC
= 480V
V
GE
= 15V
T
J
1.6
1.2
0.8
0.4
0.0
SAFE OPERATING AREA
1
A
0.1
0
10
20
30
1
10
100
1000
V
, Collector-to-Emitter Voltage (V)
I ,
Collector-to-Emitter Current (A)
CE
C
Fig. 12
– Turn-Off SOA
Fig. 11 –
Typical Switching Losses vs.
Collector-to-Emitter Current
100
T =
150°C
J
T =
125°C
J
10
T =
25°C
J
1
0.4
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop – V
(V)
FM
Fig. 13
– Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
IRG4PC30UDPbF
100
10
1
160
120
80
40
0
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
I
= 24A
F
I
= 24A
F
I
= 12A
F
I
= 12A
F
I
= 6.0A
F
I
= 6.0A
F
100
1000
100
1000
di /dt
– (A/µs)
f
di /dt
– (A/µs)
f
Fig. 15
– Typical Recovery Current vs. di
f
/dt
Fig. 14
– Typical Reverse Recovery vs. di
f
/dt
600
10000
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
400
1000
I
= 6.0A
F
I
= 24A
F
I
= 12A
F
I
= 12A
F
200
100
I
= 24A
F
I
= 6.0A
F
0
100
10
100
1000
1000
di /dt
– (A/µs)
di /dt
– (A/µs)
f
f
Fig. 16
– Typical Stored Charge vs. di
f
/dt
Fig. 17
– Typical di
(rec)M
/dt vs. di
f
/dt
7
IRG4PC30UDPbF
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
90% Ic
10% Vce
Ic
Ic
5% Ic
430µF
80%
of Vce
D.U.T.
td(off)
tf
t1+5µS
Eoff =
Vce ic dt
∫
t1
Fig. 18a
–
Test Circuit for Measurement of
LM
, E
on
, E
off(diode)
, t
rr
, Q
rr
, I
rr
, t
d(on)
, t
r
, t
d(off)
, t
f
I
t1
t2
Fig. 18b
–
Test Waveforms for Circuit of Fig. 18a, Defining
E
off
, t
d(off)
, t
f
trr
id dt
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
Vce ie dt
Eon =
t4
∫
Erec =
Vd id dt
t1
∫
t3
DIODE REVERSE
RECOVERY ENERGY
t1
t2
t3
t4
Fig. 18d
–
Test Waveforms for Circuit of
Fig. 18a,
Fig. 18c
–
Test Waveforms for Circuit of
Fig. 18a,
Defining E
rec
, t
rr
, Q
rr
, I
rr
Defining E
on
, t
d(on)
, t
r
8
IRG4PC30UDPbF
Vg
GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e.
18 ‘
480V
4 X I
C
@25°C
D.U.T.
L
R
L
=
1000V
V *
c
0 – 480V
50V
6000µF
100V
Figure 20.
Figure 19.
9
IRG4PC30UDPbF
Notes:
Repetitive rating: V
GE
=20V; pulse width limited by maximum junction temperature
(figure 20)
V
CC
=80%(V
CES
), V
G
E
=20V, L=10µH, R
G
= 23
Ω
(figure 19)
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EX
A
M
P
LE: THIS
IS
A
N
I
RFPE30
W
I
T
H
A
S
SE
M
B
LY
P
A
R
T NU
M
B
ER
IN
T
ER
N
A
T
I
O
NAL
RE
C
T
I
F
I
ER
L
O
GO
L
O
T CODE 5657
IRFPE30
035H
57
A
S
SE
M
B
LED
O
N WW 35, 2000
IN THE
A
S
SE
M
B
LY LINE
“
H
”
56
D
A
T
E
C
ODE
YE
A
R 0 =
2
000
WE
E
K
3
5
Note:
“P” in assembly line
position indicates “Lead-Free”
A
S
SE
M
B
LY
L
O
T CO
D
E
LINE H
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Data and specifications subject to change without notice.
06/04
10
Note: For
the most current drawings please refer to the IR website at:
