Infineon-Technologies-IRGP4650DPBF
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IRGP4650DPbF
IRGP4650D-EPbF
INSULATE
D
G
AT
E
B
IPOLA
R
T
RANSISTO
R
W
ITH
ULTRAFAS
T
S
OF
T
R
ECOVER
Y
D
IODE
V
CES
= 600V
C
C
C
I
C
= 50A, T
C
= 100°C
t
SC
≥
5
μ
s, T
J(max)
= 175°C
CE(on)
typ. = 1.60V @ I
C
= 35A
G
E
E
C
C
G
G
V
E
TO-247AD
IRGP4650D-EP
TO-247AC
IRGP4650DPbF
n-channel
Applications
• Industrial
Motor Drive
• Inverters
G
Gate
C
E
Collector
Emitter
• UPS
• Welding
Features
Benefits
High efficiency in a wide range of applications and switching
frequencies
Low V
CE(ON)
and Switching Losses
Improved reliability due to rugged hard switching performance
and higher power capability
Square RBSOA and Maximum Junction Temperature 175°C
Positi
v
e
V
CE (ON)
Temperature Coefficient
5
μ
s short circuit SOA
Lead-Free, RoHS compliant
Excellent current sharing in parallel operation
Enables short circuit protection scheme
En
v
i
ronmentally friendly
Standard Pack
Form
Ba
s
e p
a
rt number
Package Type
Orderable part number
Quantity
IRGP4650DPbF
IRGP4650D-EPbF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRGP4650DPbF
IRGP4650D-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
600
76
V
V
C
ES
I
C
@
T
C
= 25°C
50
I
C
@
T
C
= 100°C
105
140
76
A
I
C
M
Clamped Inductive Load
Current, V
GE
= 20V
I
LM
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
I
F
@
T
C
= 25°C
50
I
F
@
T
C
= 100°C
140
±20
I
FM
Continuous Gate-to-Emitter Voltage
V
V
GE
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
±30
268
P
D
@ T
C
= 25°C
W
°C
134
P
D
@ T
C
= 100°C
-55 to +175
T
J
Storage Temperature Range
T
STG
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Junction-to-Case (IGBT)
Junction-to-Case (Diode)
Min.
–––
–––
–––
Typ.
–––
–––
0.24
Max.
0.56
1.0
Units
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
CS
°C/W
Case-to-Sink (flat, greased surface)
–––
Junction-to-Ambient (typical socket mount)
–––
–––
40
R
θ
JA
1
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© 2014 International Rectifier
November 17, 2014
IRGP4650DPbF/IRGP4650D-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Para
m
e
ter
Min.
600
—
T
y
p.
—
Max.
—
Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
V
GE
= 0V, I
C
= 100
μ
A
V
/ T
Temperature Coeff. of Breakdown Voltage
1.3
1.60
1.90
2.00
—
—
mV/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
I
C
= 35A, V
GE
= 15V, T
J
= 25°C
Δ
(BR)CES
Δ
J
—
1.90
—
V
CE(on)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
—
V
I
C
= 35A, V
GE
= 15V, T
J
= 150°C
I
C
= 35A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 1.0mA
—
—
V
GE(th)
4.0
—
6.5
—
V
Δ
V
GE(th)
/
Δ
TJ Threshold
Voltage temp. coefficient
-18
25
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C – 175°C)
gfe
Forward Transconductance
—
—
S
V
CE
= 50V, I
C
= 35A, PW = 60
μ
s
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
F
= 35A
I
CES
Collector-to-Emitter Leakage Current
—
1.0
770
2.0
1.4
—
70
μ
A
—
—
V
FM
Diode Forward Voltage Drop
—
3.0
—
V
—
I
F
= 35A, T
J
= 175°C
V
GE
= ±20V
I
GES
Gate-to-Emitter Leakage Current
—
±100
nA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Para
m
e
ter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
T
y
p.
69
Max.
104
27
Units
Conditions
I
C
= 35A
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
18
nC
V
GE
= 15V
29
44
V
CC
= 400V
390
632
1022
46
508
753
1261
56
I
C
= 35A, V
CC
= 400V, V
GE
= 15V
R
G
= 10
Ω
, L = 200
μ
H, L
S
= 150nH, T
J
= 25°C
Energy losses include tail & diode reverse recovery
I
C
= 35A, V
CC
= 400V, V
GE
= 15V
R
G
= 10
Ω
, L = 200
μ
H, L
S
= 150nH, T
J
= 25°C
μ
J
33
42
ns
t
d(off)
t
f
Turn-Off delay time
Fall time
105
44
117
54
E
on
E
off
E
total
t
d(on)
t
r
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
1013
929
1942
43
—
I
C
= 35A, V
CC
= 400V, V
GE
=15V
R
G
=10
Ω
, L=200
μ
H, L
S
=150nH, T
J
= 175°C
Energy losses include tail & diode reverse recovery
I
C
= 35A, V
CC
= 400V, V
GE
= 15V
R
G
= 10
Ω
, L = 200
μ
H, L
S
= 150nH
T
J
= 175°C
—
μ
J
ns
pF
—
—
35
—
t
d(off)
t
f
Turn-Off delay time
Fall time
127
61
—
—
C
ies
C
oes
C
res
Input Capacitance
2113
197
65
—
V
GE
= 0V
Output Capacitance
Reverse Transfer Capacitance
—
V
CC
= 30V
—
f = 1.0Mhz
T
J
= 175°C, I
C
= 140A
V
CC
= 480V, Vp
600V
Rg = 10
Ω
, V
GE
= +20V to 0V
V
CC
= 400V, Vp
600V
Rg = 10
Ω
, V
GE
= +15V to 0V
T
J
= 175°C
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
5
—
—
μ
s
Erec
t
rr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
304
120
25
—
—
—
μ
J
ns
A
V
CC
= 400V, I
F
= 35A
V
GE
= 15V, Rg = 10
Ω
, L =210
μ
H, L
s
= 150nH
I
rr
Peak Reverse Recovery Current
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 19
μ
H, R
G
= 10
Ω
.
R
θ
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Pulse width limited by max. junction temperature.
ꢀ
Values influenced by parasitic L and C in measurement.
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© 2014 International Rectifier
November 17, 2014
2
IRGP4650DPbF/IRGP4650D-EPbF
80
70
60
50
40
30
20
10
0
300
250
200
150
100
50
0
25
50
75
100
(°C)
125
150
175
25
50
75
100
(°C)
125
150
175
1000
10
T
C
T
C
Fig. 1
– Maximum DC Collector Current vs.
Fig. 2
– Power
Dissipation vs. Case
Case Temperature
Temperature
1000
1000
100
100
μ
sec
10
μ
sec
100
10
1
10
1
1msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
10
100
(V)
V
(V)
V
CE
CE
Fig. 3
– Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
=15V
Fig. 4
– Reverse Bias SOA
T
J
= 175°C; V
GE
=20V
140
120
100
80
140
120
100
80
V
V
V
V
V
= 18V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
GE
= 15V
= 12V
= 10V
= 8.0V
V
GE
V
GE
V
GE
V
GE
60
60
40
40
20
20
0
0
0
2
4
6
8
10
0
2
4
6
8
V
(V)
V
(V)
CE
CE
Fig. 5
– Typ. IGBT Output Characteristics
T
J
= -40°C; tp =
≤
60
μ
s
Fig. 6
– Typ. IGBT Output Characteristics
T
J
= 25°C; tp =
≤
60
μ
s
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© 2014 International Rectifier
November 17, 2014
3
IRGP4650DPbF/IRGP4650D-EPbF
140
120
100
80
140
120
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
100
-40°C
25°C
175°C
80
60
40
20
0
60
40
20
0
0
2
4
6
8
10
0.0
1.0
2.0
(V)
3.0
4.0
V
F
V
(V)
CE
Fig. 7
– Typ. IGBT Output Characteristics
T
J
= 175°C; tp =
≤
60
μ
s
Fig. 8
– Typ. Diode Forward Characteristics
tp = 80
μ
s
20
18
16
14
12
20
18
16
14
12
I
I
I
= 18A
= 35A
= 70A
CE
CE
CE
I
I
I
= 18A
= 35A
= 70A
CE
CE
CE
10
8
10
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10
– Typical V
CE
vs. V
GE
Fig. 9
– Typical V
CE
vs. V
GE
T
J
= 25°C
T
J
= -40°C
20
18
16
14
12
10
8
140
120
100
80
T
= 25°C
J
I
I
I
= 18A
= 35A
= 70A
CE
CE
CE
T
= 175°C
J
60
6
40
4
20
2
0
0
4
5
6
7
8
9
10 11 12 13 14
5
10
15
20
V
Gate-to-Emitter Voltage (V)
V
(V)
GE,
GE
Fig. 11
– Typical V
CE
vs. V
GE
Fig. 12
– Typ. Transfer Characteristics
CE
= 50V; tp = 60
μ
s
T
J
= 175°C
V
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© 2014 International Rectifier
November 17, 2014
4
IRGP4650DPbF/IRGP4650D-EPbF
4000
3500
3000
2500
2000
1500
1000
500
1000
td
OFF
E
ON
100
t
F
E
OFF
td
ON
t
R
0
10
0
10
20
30
I
40
(A)
50
60
70
0
10
20
30
I
40
(A)
50
60
70
C
C
Fig. 13
– Typ. Energy Loss vs. I
C
Fig. 14
– Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200
μ
H; V
CE
= 400V, R
G
= 10
Ω
; V
GE
= 15V
T
J
= 175°C; L = 200
μ
H; V
CE
= 400V, R
G
= 10
Ω
; V
GE
= 15V
3000
1000
2500
E
ON
2000
td
OFF
E
100
OFF
t
F
1500
1000
500
td
ON
t
R
10
0
25
50
75
100
0
10
20
30
(
Ω
)
40
50
R
G
Ω
Rg (
)
Fig. 16
– Typ. Switching Time vs. R
G
Fig. 15
– Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 210
μ
H; V
CE
= 400V, I
CE
= 35A; V
GE
= 15V
T
J
= 175°C; L = 210
μ
H; V
CE
= 400V, I
CE
= 35A; V
GE
= 15V
35
26
R
10
Ω
24
22
20
18
16
14
G =
30
25
20
15
10
R
22
Ω
G =
R
47
Ω
G =
R
100
Ω
G =
20
10
30
40
(A)
50
60
70
0
20
40
60
Ω)
80
100
I
R
(
F
G
Fig. 17
– Typ. Diode I
RR
vs. I
F
Fig. 18
– Typ. Diode I
RR
vs. R
G
T
J
= 175°C
T
J
= 175°C
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© 2014 International Rectifier
November 17, 2014
5
IRGP4650DPbF/IRGP4650D-EPbF
2500
2250
26
24
22
20
18
16
14
Ω
10
2000
1750
1500
1250
1000
35A
70A
Ω
22
Ω
47
18A
Ω
100
100 200 300 400 500 600 700 800 900
200
300
400
500
600
700
di /dt
(A/
μ
s)
di /dt
(A/
μ
s)
F
F
Fig. 20
– Typ. Diode Q
RR
vs. di
F
/dt
Fig. 19
– Typ. Diode I
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V; T
J
= 175°C
V
CC
= 400V; V
GE
= 15V; I
F
= 35A; T
J
= 175°C
300
225
150
75
20
15
10
5
400
Ω
= 10
R
G
I
350
300
250
200
150
100
sc
T
sc
R
= 22
Ω
G
R
R
= 47
Ω
G
= 100
Ω
G
0
0
8
10
12
14
(V)
16
18
10
20
30
40
(A)
50
60
70
V
I
GE
F
Fig. 22
– V
GE
vs. Short Circuit Time
Fig. 21
– Typ. Diode E
RR
vs. I
F
V
CC
= 400V; T
C
= 25°C
T
J
= 175°C
10000
1000
100
16
14
12
10
8
V
V
= 400V
= 300V
CES
CES
Cies
6
Coes
Cres
4
2
10
0
0
100
200
V
300
(V)
400
500
0
10
20
30
40
50
60
70
Q
, Total Gate Charge (nC)
G
CE
Fig. 24
– Typical Gate Charge vs. V
GE
I
CE
= 35A; L = 740
μ
H
Fig. 23
– Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
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© 2014 International Rectifier
November 17, 2014
6
IRGP4650DPbF/IRGP4650D-EPbF
1
D = 0.50
0.20
0.10
0.1
R
1
R
1
R
2
R
2
R
3
R
3
R
4
R
4
Ri (°C/W)
τ
i (sec)
0.05
τ
0.01041 0.000006
τ
J
τ
J
C
τ
τ
0.15911
0.000142
0.23643 0.002035
0.15465
0.013806
τ
1
τ
1
Ci=
τ
i
/
Ri
τ
τ
2
τ
2
0.02
0.01
3
τ
3
4
τ
4
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 25.
Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
0.1
R
1
R
1
R
2
R
2
R
3
R
3
R
4
R
4
Ri (°C/W)
τ
i (sec)
τ
0.01716 0.000031
τ
J
τ
J
τ
C
τ
0.02
0.01
0.35875
0.000517
0.41334 0.004192
0.20121
0.024392
1
τ
1
Ci=
τ
i
/
Ri
τ
τ
τ
2
τ
2
3
τ
3
0.01
0.001
0.0001
4
τ
4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26.
Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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© 2014 International Rectifier
November 17, 2014
7
IRGP4650DPbF/IRGP4650D-EPbF
L
L
80 V
+
–
DUT
VCC
0
DUT
VCC
1K
Rg
Fig.C.T.1
– Gate Charge Circuit (turn-off)
Fig.C.T.2
– RBSOA Circuit
diode clamp /
DUT
L
4X
-5V
DC
DUT
VCC
DUT /
VCC
DRIVER
Rg
SCSOA
Fig.C.T.3
– S.C. SOA Circuit
Fig.C.T.4
– Switching Loss Circuit
C force
100K
R =
VCC
ICM
D1 22K
C sense
VCC
DUT
DUT
G force
Rg
0.0075
μ
F
E sense
E force
Fig.C.T.6
– BVCES Filter Circuit
Fig.C.T.5
– Resistive Load Circuit
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© 2014 International Rectifier
November 17, 2014
8
IRGP4650DPbF/IRGP4650D-EPbF
600
500
400
300
200
100
0
60
50
40
30
20
10
0
600
500
400
300
200
100
0
60
50
40
30
20
10
0
TEST
CURRENT
tf
tr
90%
I
CE
90% test
current
5% V
CE
5%
I
CE
5%
V
CE
10% test
current
Eon
Eof f
Loss
Loss
-100
-10
-100
-10
-0.5
0
0.5
1
1.5
2
6.4
6.6
6.8
time (
μ
s)
7
7.2
time(
μ
s)
Fig. WF1
– Typ. Turn-off Loss Waveform
Fig. WF2
– Typ. Turn-on Loss Waveform
@ T
J
= 175°C using Fig. CT.4
@ T
J
= 175°C using Fig. CT.4
700
600
350
300
250
200
150
100
50
40
30
20
10
0
ICE
Q
RR
t
RR
500
400
300
200
100
0
VCE
10%
P
e
ak
P
e
ak
-10
-20
-30
I
RR
IRR
0
-100
-50
-0.3
-0.2
-0.1
0
0.1
0.2
-4.5
0.5
5.5
Time (uS)
10.5
time (
μ
S)
Fig. WF4
– Typ. S.C. Waveform
Fig. WF3
– Typ. Diode Recovery Waveform
@ T
J
= 25°C using Fig. CT.3
@ T
J
= 175°C using Fig. CT.4
www.irf.com
© 2014 International Rectifier
November 17, 2014
9
IRGP4650DPbF/IRGP4650D-EPbF
TO-247A
C
P
ackag
e
O
utline
Dimensions are shown in millimeters (inches)
TO-247A
C
P
ar
t
M
arkin
g
I
nformation
E
X
AM
P
LE: THIS
IS
A
N
I
RFPE30
W
I
T H
A
S S
E
M
B
LY
P
A
R
T NU
M
B
ER
IN
T
ER
N
A
T
I
O
N
A
L
L
O
T CODE 5657
IRFPE30
135H
57
RE
C
T
I
FIER
L
O
GO
AS S
E
M
B
L
E D
O
N WW
3
5, 2001
IN THE
A
S
SE
M
B
LY LINE “H”
56
DA
T
E
C
ODE
Y
E
A
R 1 =
2001
W
E
E K
35
AS S E MB L Y
L
O
T CODE
Note: “P” in a
s
s
e
mb
l
y li
n
e
p
o
s
i
tion
indicates “L
ead-F ree”
LINE H
TO-247AC package is not recommended for Surface Mount Application.
November 17, 2014
10
IRGP4650DPbF/IRGP4650D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E
X
A
M
P
LE: THIS
IS
A
N
I
R
G
P
30
B
1
20KD-E
WI
T
H
A
S
SE
M
B
LY
P
A
R
T NU
M
B
ER
IN
T
ER
N
A
T
I
O
NAL
L
O
T CODE 5657
RE
C
T
I
FIER
L
O
GO
A
S
SE
M
B
LED
O
N W
W
3
5, 2000
IN THE
A
S
SE
M
B
LY LINE “H”
035H
57
56
D
A
T
E
C
ODE
Y
E
A
R 0 =
2000
A
S
SE
M
B
LY
L
O
T CODE
Note: “P” in
a
s
s
e
mb
l
y line po
s
i
tion
i
n
d
i
c
ates “L
ead
–
F r
e
e”
W
E
EK
3
5
LINE H
TO-247AD package is not recommended for Surface Mount Application.
November 17, 2014
11
IRGP4650DPbF/IRGP4650D-EPbF
Qualification Information
†
Qualification Level
Industrial
(per International Rectifier’s internal guidelines)
Moisture Sensitivity Level
RoHS Compliant
TO-247AC
TO-247AD
N/A
N/A
Yes
† Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com/product-info/reliability
†† Highest passing voltage.
Revision History
Date
Comments
•
•
Added note
Added note
to I
FM
Diode Maximum Forward Current on page 1.
11/17/2014
to switching losses test condition on page 2.
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
www.irf.com
© 2014 International Rectifier
November 17, 2014
12
